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    A Major Project

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    Varun Chauhan
    Thermal oxidation is used to produce a thin layer of silicon dioxide on a silicon wafer surface. It involves diffusing an oxidizing agent like oxygen or water vapor into the wafer at high temperatures, which reacts with the silicon to form silicon dioxide. There are two main techniques - dry oxidation using oxygen and wet oxidation using steam, with wet oxidation producing a thicker oxide layer. The oxidation process occurs as oxidizing species diffuse through the oxide layer and react at the silicon interface. The rate of oxide growth depends on factors like temperature, oxidizing agent concentration, and thickness of the existing oxide layer.

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    A Major Project

    Uploaded by

    Varun Chauhan
    60 views14 pages
    Thermal oxidation is used to produce a thin layer of silicon dioxide on a silicon wafer surface. It involves diffusing an oxidizing agent like oxygen or water vapor into the wafer at high temperatures, which reacts with the silicon to form silicon dioxide. There are two main techniques - dry oxidation using oxygen and wet oxidation using steam, with wet oxidation producing a thicker oxide layer. The oxidation process occurs as oxidizing species diffuse through the oxide layer and react at the silicon interface. The rate of oxide growth depends on factors like temperature, oxidizing agent concentration, and thickness of the existing oxide layer.

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    oxidation

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    Thermal oxidation is used to produce a thin layer of silicon dioxide on a silicon wafer surface. It involves diffusing an oxidizing agent like oxygen or water vapor into the wafer at high temperatures, which reacts with the silicon to form silicon dioxide. There are two main techniques - dry oxidation using oxygen and wet oxidation using steam, with wet oxidation producing a thicker oxide layer. The oxidation process occurs as oxidizing species diffuse through the oxide layer and react at the silicon interface. The rate of oxide growth depends on factors like temperature, oxidizing agent concentration, and thickness of the existing oxide layer.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    60 views14 pages

    A Major Project

    Uploaded by

    Varun Chauhan
    Thermal oxidation is used to produce a thin layer of silicon dioxide on a silicon wafer surface. It involves diffusing an oxidizing agent like oxygen or water vapor into the wafer at high temperatures, which reacts with the silicon to form silicon dioxide. There are two main techniques - dry oxidation using oxygen and wet oxidation using steam, with wet oxidation producing a thicker oxide layer. The oxidation process occurs as oxidizing species diffuse through the oxide layer and react at the silicon interface. The rate of oxide growth depends on factors like temperature, oxidizing agent concentration, and thickness of the existing oxide layer.

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    © All Rights Reserved
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    Download as pptx, pdf, or txt
    of 14

    The process or result of oxidizing or

    being oxidized

    • To act as mask for diffusion of dopant into si substrate.


    • To provide surface passivation.con.

    • To isolate one device from other in integrated circuit


    • To act as gate in mos-ics and mosfets.

    • To provide electrical isolation of multilevel metallization


    system.
    Thermal Oxidation
    Thermal oxidation is a way to produce
    a thin layer of oxide (usually silicon
    dioxide) on the surface of a wafer. The
    technique forces an oxidizing agent to
    diffuse into the wafer at high
    temperature and react with it.

    Figure:1 oxidation process


    Growth mechanism and kinetics
    The thermal oxidation of Si in oxygen or water vapour may take
    place in following fashion.

    Cg→Concentration of oxidizing species in gas.


    Cs→Concentration of next to gas oxide interface.
    Co→Concentration at the outer surface.
    Ci→Concentration at the inner surface.
    C*→Equilibrium Concentration of oxidizing
    species.

    F1= Hg(Cg-Cs) = Hg (C*-Co)


    F2=D(Co-Ci)/x
    F3=KsCi
    Growth techniques of oxide layer
    • Dry oxidation-In this oxidation the oxidant used is oxygen
    Si (solid) + O2 (vapour) --> SiO2 (solid)
    • Wet oxidation-In this process steam is used as an oxidant. This method is used to produce
    a thicker oxide 2,000-24,000Å, this thick oxide is usually called "field oxide" and it is
    found in areas on the device where high dielectric strength is needed
    Si (solid) + 2H2O (vapour) --> SiO2 (solid) + 2H2 (vapour

    Oxygen atoms combined with Silicon Silicon Dioxide thick film growth process
    atoms to form SiO2 at the Silicon
    interface (picture taken with an atomic
    force microscope
    Calculation of rate of oxide growth

    A=2D[1/ks+1/h
    B=2DC*/N1

    do/A/2=[1+t+ɽ/A2/4B]1/2

    Limiting cases
    •Long oxidation do2=BT
    •Short oxidation do =B/A(t+ɽ)
    High pressure oxidation

    Plasma oxidation -Plasma electrolytic oxidation (PEO),


    also known as is an electrochemical surface treatment
    process for generating oxide coatings on metals.

    Si +2H+2H o=sio2+H2+2H+
    2

    silicon Oxygen plasma


    Oxide Charges
    These are present in the transition region exist at the interface of
    Si-SiO2.These are include due to structural defects related to
    oxidation process ,metallic impurities, or bond breaking processes.
    Summarizing the Process
    Oxidation Process Video…..
    Thank
    you

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