2n5555 Jfet

ON Semiconductor
1 DRAIN
JFET Switching
2N5555
3
GATE
NChannel Depletion
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
DrainGate Voltage
VDG
25
Vdc
GateSource Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
350
2.8
mW
mW/C
Junction Temperature Range
TJ
65 to +150
Storage Temperature Range
Tstg
65 to +150
1
2
CASE 2911, STYLE 5

TO92 (TO226AA)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
25
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
1.0
nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)

Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C)
ID(off)
10
2.0
nAdc
Adc
IDSS
15
mAdc
VGS(f)
1.0
Vdc
DrainSource OnVoltage
(ID = 7.0 mAdc, VGS = 0)
VDS(on)
1.5
Vdc
Static DrainSource On Resistance

(ID = 0.1 mAdc, VGS = 0)
rDS(on)
150
Ohms
rds(on)
150
Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
5.0
pF
Reverse Transfer Capacitance

(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss
1.2
pF
(V
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,
0 VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
VGS(on) = 0,
1)
td(on)
5.0
ns
tr
5.0
ns
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,

(V
VGS(on) = 0,
0 VGS(off) = 10
10 Vdc)
Vd ) (See
(S Figure
Fi
1)
td(off)
15
ns
tf
10
ns
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0)
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
GateSource Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%.
SMALLSIGNAL CHARACTERISTICS
SmallSignal DrainSource ON Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 3
Publication Order Number:

2N5555/D
2N5555
PULSE WIDTH
VDD
1.0 k
PULSE
GENERATOR
(50 OHMS)
90%
50 OHM
COAXIAL
CABLE
10 k
50 OHM COAXIAL CABLE

1.0 k
TEKTRONIX
567
SAMPLING
SCOPE
INPUT
VGS(on)
90%
50%
10%
50%
10%
INPUT PULSE
RISE TIME
VGS(off)
INPUT PULSE
FALL TIME
Rin =
50 OHMS
50
td(on)
OUTPUT
INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns
DUTY CYCLE 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
td(off)
10%
10%
90%
90%
tr
tf
Figure 1. Switching Times Test Circuit
COMMON SOURCE CHARACTERISTICS
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
0.3
grs , REVERSE TRANSADMITTANCE (mmhos)

brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

bis, INPUT SUSCEPTANCE (mmhos)
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25C)
bis @ 0.25 IDSS

10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
5.0
3.0
2.0
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
500 700 1000
brs @ IDSS
1.0
0.7
0.5
grs @ IDSS, 0.25 IDSS

10
20
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 100
10
10
7.0
5.0
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
0.3
0.2
30
Figure 3. Reverse Transfer Admittance (yrs)
gos, OUTPUT ADMITTANCE (mhos)

bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)

|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 2. Input Admittance (yis)
20
|bfs| @ IDSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
|bfs| @ 0.25 IDSS

10
5.0
gos @ 0.25 IDSS
0.02
500 700 1000
0.01
10
Figure 4. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 100
Figure 5. Output Admittance (yos)
http://onsemi.com
2
2N5555
COMMON SOURCE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30
20
10
0
1.0
40
350
100
340
400
0.8
ID = IDSS
0.6
90
800
50
350
340
330
320
700
800
700
300
60
290
70
280
80
900
0.3
ID = IDSS, 0.25 IDSS
310
900
800
0.2
300
700
600
600
500
600
80
310
0
0.4
500
400
0.7
70
40
10
300
300
60
320
20
200
200
0.9
30
ID = 0.25 IDSS
100
50
330
0.1
500
290
400
300
280
0.0
200
270
90
100
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
900
150
160
30
20
170
180
190
200
210
150
160
340
330
30
20
Figure 6. S11s
10
350
0.6
0.5
60
900
70
80
90
100
110
120
800
700
600
500
0.4
900
800
700
600
500
0.3
100
400
400
0.3
ID = 0.25 IDSS
300
200
0.4
100
0.5
300
ID = IDSS
200
170
180
190
200
210
Figure 7. S12s
40
50
270
100
130
10
0
350
340
330
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
320
40
310
50
300
60
290
70
280
80
270
90
270
260
100
260
250
110
250
240
120
240
230
130
230
220
140
220
0.7
320
310
300
290
280
0.6
0.6
140
150
160
170
180
190
200
210
150
Figure 8. S21s
160
170
180
190
Figure 9. S22s
3
200
210
2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25C)
10
7.0
5.0
grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

big, INPUT SUSCEPTANCE (mmhos)
20
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
0.3
0.2
10
20
30
big @ 0.25 IDSS

50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS

10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
0.1
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 11. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)

bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 10. Input Admittance (yig)
20
500 700 1000
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
0.01
gog @ 0.25 IDSS

10
Figure 12. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 13. Output Admittance (yog)
4
2N5555
COMMON GATE CHARACTERISTICS
SPARAMETERS
(VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30
20
10
350
340
0.7
40
100
100
200
200
0.5
300
300
60
ID = IDSS
0.4
70
400
700
400
500
310
50
300
60
290
70
280
80
600
900
270
90
100
260
100
110
250
110
120
240
120
130
230
130
140
220
160
170
180
190
20
10
350
200
50
320
300
0.01
100
600
ID = IDSS
700
290
280
0.0
270
500
600
700
800
800
260
ID = 0.25 IDSS
250
0.01
240
0.02
230
900
0.03
220
0.04
150
160
170
180
190
200
210
340
330
Figure 15. S12g

340
330
30
20
10
40
320
0
1.5
1.0
100
100
0.4
330
0.02
140
210
0.5
40
340
310
Figure 14. S11g

30
350
0.04
900
150
800
900
90
40
10
600
800
0.3
320
20
0.03
500
700
80
30
ID = 0.25 IDSS
0.6
50
330
350
300
200
400
320
700
600
800
0.9
ID = IDSS
500
900
310
50
300
60
290
70
280
80
270
90
270
260
100
260
110
250
110
250
120
240
120
240
130
230
130
230
140
220
140
220
100
0.3
60
0.2
70
80
ID = 0.25 IDSS
0.1
900
90
900
100
150
160
170
180
190
200
210
ID = IDSS, 0.25 IDSS

0.8
Figure 16. S21g
300
0.7
290
280
0.6
150
160
170
180
190
Figure 17. S22g

5
310
200
210
2N5555
PACKAGE DIMENSIONS
TO92 (TO226AA)
CASE 2911
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
N
N
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
6
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
2N5555
Notes
7
2N5555
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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8
2N5555/D
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ON Semiconductor

Forward Gate Current

Total Device Dissipation @ TC = 25C

Junction Temperature Range

Storage Temperature Range

CASE 2911, STYLE 5

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Gate Reverse Current (VGS = 15 Vdc, VDS = 0)

Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V)

Static DrainSource On Resistance

Reverse Transfer Capacitance

( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,

Semiconductor Components Industries, LLC, 2001

November, 2001 Rev. 3

Publication Order Number:

50 OHM COAXIAL CABLE

Figure 1. Switching Times Test Circuit

COMMON SOURCE CHARACTERISTICS

gis @ 0.25 IDSS

grs , REVERSE TRANSADMITTANCE (mmhos)

gis, INPUT CONDUCTANCE (mmhos)

bis @ 0.25 IDSS

500 700 1000

grs @ IDSS, 0.25 IDSS

500 700 100

Figure 3. Reverse Transfer Admittance (yrs)

gos, OUTPUT ADMITTANCE (mhos)

gfs, FORWARD TRANSCONDUCTANCE (mmhos)

Figure 2. Input Admittance (yis)

bos @ IDSS and 0.25 IDSS

|bfs| @ 0.25 IDSS

gos @ 0.25 IDSS

500 700 1000

Figure 4. Forward Transadmittance (yfs)

500 700 100

Figure 5. Output Admittance (yos)

ID = IDSS, 0.25 IDSS

grg , REVERSE TRANSADMITTANCE (mmhos)

gig, INPUT CONDUCTANCE (mmhos)

grg @ 0.25 IDSS

big @ 0.25 IDSS

500 700 1000

gig @ IDSS, 0.25 IDSS

gfg @ 0.25 IDSS

brg @ 0.25 IDSS

500 700 1000

Figure 11. Reverse Transfer Admittance (yrg)

gog, OUTPUT ADMITTANCE (mmhos)

gfg , FORWARD TRANSCONDUCTANCE (mmhos)

Figure 10. Input Admittance (yig)

500 700 1000

bog @ IDSS, 0.25 IDSS

gog @ 0.25 IDSS

Figure 12. Forward Transfer Admittance (yfg)

500 700 1000

Figure 13. Output Admittance (yog)

Figure 15. S12g

Figure 14. S11g

ID = IDSS, 0.25 IDSS