Cellonics Technology

Introduction
In digital communication , CellonicsTM offers a fundamental change to the way modem solutions have traditionally been designed and built. CellonicsTM technology introduces a simple and swift Carrier - Rate DecodingTM solution to the receiving and decoding of a modulated signal. It encodes and decodes signals at one symbol per cycle-a feature not found elsewhere. Its simplicity will obsolete the super heterodyne receiver design that has been in use since its invention by Major Edward Armstrong in 1918.In fact, according to one estimate,98 % of the worlds radio systems are still based on this superhet design. Cellonics Inc. has invented and patented a number of circuits that mimic the above biological cell behavior. The CellonicsTM circuits are incredibly simple with advantages of low-cost, low power consumption and smallness of size. When applied in communication, the CellonicsTM technology is a fundamental modulation and demodulation technique. The CellonicsTM receivers are used as devices that generate pulses from the received analog signal and perform demodulation based on pulse counting Birth Of Cellonics For the last 60 years, the way radio receivers are designed and built has undergone amazingly little change. Much of the current approach could be attributed to EH Armstrong, the oft -credited Father of FM, who invented the super heterodyne method in 1918.He further developed it into a complete FM commercial system in 1933 for use in public-radio broadcasting. Today, more than 98% of receivers in radios, television and mobile phones use this method. The subsystem used in the superhet design consists of radio-frequency (RF)amplifiers mixers ,phase-lock loops ,filters,oscillators and other components ,which are all complex ,noisy ,and power hungry. Capturing a communications element from the air to retrieve its modulated signal is not easy ,and a system often needs to spend thousands of carrier cycles to recover just one bit of information .This process of demodulation is inefficient ,and newly emerging schemes result in complex chips difficult and expensive to manufacture. So it was necessary to invent a new demodulation circuit ,which do the job of conventional superheterodyne receiver but at afar lesser component count, faster and lower in power consumption and possessing greater signal robustness These

requirements were met by designing a circuit which models the biological cell behavior as explained earlier. The technology for this, named CELLONICS ,was invented by scientists from CWC(Center for Wireless communication) and Computational Science Department in Singapore. Principles Of The Technology The Cellonics technology is a revolutionary and unconventional approach based on the theory of nonlinear dynamical systems and modeled after biological cell behavior. When used in the field of communication, the technology has the ability to encode, transmit and decode digital information powerfully over a variety of physical channels, be they cables or wirelessly through air.

Moletronics- an invisible technology

As a scientific pursuit, the search for a viable successor to silicon computer technology has garnered considerable curiosity in the last decade. The latest idea, and one of the most intriguing, is known as molecular computers, or moletronics, in which single molecules serve as switches, "quantum wires" a few atoms thick serve as wiring, and the hardware is synthesized chemically from the bottom up. The central thesis of moletronics is that almost any chemically stable structure that is not specifically disallowed by the laws of physics can in fact be built. The possibility of building things atom by atom was first introduced by Richard Feynman in 1959. An "assembler", which is little more than a submicroscopic robotic arm can be built and be controlled. We can use it to secure and position compounds in order to direct the precise location at which chemical reactions occur. This general approach allows the construction of large, atomically precise objects by initiating a sequence of controlled chemical reactions. In order for this to function as we wish, each assembler requires a process for receiving and executing the instruction set that will dictate its actions. In time, molecular machines might even have onboard, high speed RAM and slower but more permanent storage. They would have communications capability and power supply. Moletronics is expected to touch almost every aspect of our lives, right down to the water we drink and the air we breathe. Experimental work has already resulted in the production of molecular tweezers, a carbon nanotube transistor, and logic gates. Theoretical work is progressing as well. James M. Tour of Rice University is working on the construction of a molecular computer. Researchers at Zyvex have proposed an Exponential Assembly Process that might improve the creation of assemblers and products, before they are even simulated in the lab. We have even seen researchers create an artificial muscle using nanotubes, which may have medical applications in the nearer term. Teramac computer has the capacity to perform 1012 operations in one seconds but it has 220,000 hardware defects and still has performed some tasks 100 times faster than single-processor .The defect-tolerant computerarchitecture and its implications for moletronics is the latest in this technology. So the very fact that this machine worked suggested that we ought to take some time and learn about it. Such a 'defect-tolerant' architecture through moletronics could bridge the gap between the current generation of microchips and the next generation of molecular-scale computers. Moletronic circuit--QCA basics The interaction between cells is Coulombic, and provides the necessary computing power. No current flows between cells and no power or information is delivered to individual internal cells. Local interconnections between cells are provided by the physics of cell-cell interaction. The links below describes the QCA cell and the process of building up useful computational elements from it. The discussion is mostly qualitative and based on the intuitively clear behavior of electrons in the cell.

Fundamental Aspects of QCA A QCA cell consists of 4 quantum dots positioned at the vertices of a square and contains 2 extra electrons. The configuration of these electrons is used to encode binary information. The 2 electrons sitting on diagonal sites of the square from left to right and right to left are used to represent the binary "1" and "0" states respectively. For an isolated cell these 2 states will have the same energy. However for an array of cells, the state of each cell is determined by its interaction with neighboring cells through the Coulomb interaction.

FinFET Technology

Definition
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits. The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub threshold slope and quantum-mechanical tunneling of carriers through thin gate from drain to source and from drain to body. The channel depletion width must scale with the channel length to contain the off-state leakage I off. This leads to high doping concentration, which degrade the carrier mobility and causes junction edge leakage due to tunneling. Furthermore, the dopant profile control, in terms of depth and steepness, becomes much more difficult. The gate oxide thickness tox must also scale with the channel length to maintain gate control, proper threshold voltage VT andperformance. The thinning of the gate dielectric results in gate tunneling leakage, degrading the circuit performance, power and noise margin. Alternative device structures based on silicon-on-insulator (SOI) technology have emerged as an effective means of extending MOS scaling beyond bulk limits for mainstream high-performance or low-power applications .Partially depleted (PD) SOIwas the first SOI technology introduced for high-performance microprocessor applications. The ultra-thin-body fully depleted (FD) SOI and the non-planar FinFET device structures promise to be the potential "future" technology/device choices. In these device structures, the short-channel effect is controlled by geometry, and the thin Si film limits the off-state leakage. For effective suppression of the offstate leakage, the thickness of the Si film must be less than one quarter of the channel length. The desired VT is achieved by manipulating the gate work function, such as the use of midgap material or poly-SiGe. Concurrently, material enhancements, such as the use of a) high-k gate material and b) strained Si channel for mobility and current drive improvement, have been actively pursued. As scaling approaches multiple physical limits and as new device structures and materials are introduced, unique and new circuit design issues continue to be presented. In this article, we review the design challenges of these emerging technologies with particular emphasis on the implications and impacts of individual device scalingelements and unique device structures on the circuit design. We focus on the planar device structures, from continuous scaling of PD SOI to FD SOI, and new materials such as strained-Si channel and high-k gate dielectric.

Partially Depleted [PD] SOI The PD floating-body MOSFET was the first SOI transistor generically adopted for highperformance applications, primarily due to device and processing similarities to bulk CMOS device. The PD SOI device is largely identical to the bulk device, except for the addition of a buried oxide ("BOX") layer. The active Si film thickness is larger than the channel depletion width, thus

leaving a quasi-neutral "floating" body region underneath the channel. The V T of the device is completely decoupled from the Si film thickness, and the doping profiles can be tailored for any desired VT. The device offers several advantages for performance/ power improvement: 1) Reduced junction capacitance, 2) Lower average threshold due to positive V BS during switching. 3) Dynamic loading effects, in which the load device tends to be in high VT state during switching The performance comes at the cost of some design complexity resulting from the floating body of the device, such as 1) Parasitic bipolar effect and 2) Hysteretic VT variation.