APTGT400A60D3G

Phase leg VCES = 600V

Trench + Field Stop IGBT3 IC = 400A @ Tc = 80°C
Power Module

Application
3  Welding converters
Q1  Switched Mode Power Supplies
4  Uninterruptible Power Supplies
 Motor control
5
1 Features
Q2  Trench + Field Stop IGBT3 Technology
6 - Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
7
2 - Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 High level of integration
 M6 power connectors

Benefits
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant

Absolute maximum ratings

Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 500
IC Continuous Collector Current
TC = 80°C 400 A
ICM Pulsed Collector Current TC = 25°C 800
APTGT400A60D3G – Rev 2 October 2012

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation TC = 25°C 1250 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 800A @ 520V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com

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 APTGT400A60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 500 µA
VGE = 15V Tj = 25°C 1.5 1.9
VCE(sat) Collector Emitter saturation Voltage V
IC = 400A Tj = 150°C 1.7
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 6.4 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA

Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance VGE = 0V 24
Coes Output Capacitance VCE = 25V 1.5 nF
Cres Reverse Transfer Capacitance f = 1MHz 0.75
VGE=±15V, IC=400A
QG Gate charge 4.2 µC
VCE=300V
Td(on) Turn-on Delay Time Inductive Switching (25°C) 110
Tr Rise Time VGE = ±15V 50
VBus = 300V ns
Td(off) Turn-off Delay Time 490
IC = 400A
Tf Fall Time RG = 1.5 50
Td(on) Turn-on Delay Time Inductive Switching (150°C) 130
Tr Rise Time VGE = ±15V 60
VBus = 300V ns
Td(off) Turn-off Delay Time IC = 400A 530
Tf Fall Time RG = 1.5 70
VGE = ±15V Tj = 25°C 3.2
Eon Turn on Energy
VBus = 300V Tj = 150°C 3.4
mJ
IC = 400A Tj = 25°C 15
Eoff Turn off Energy RG = 1.5 Tj = 150°C 15.5
VGE ≤15V ; VBus = 360V
Isc Short Circuit data 2000 A
tp ≤ 6µs ; Tj = 150°C

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 500
IRRM Maximum Reverse Leakage Current VR=600V µA
Tj = 150°C 750
IF DC Forward Current Tc = 80°C 400 A
IF = 400A Tj = 25°C 1.6 2
VF Diode Forward Voltage V
VGE = 0V Tj = 150°C 1.5
Tj = 25°C 125
trr Reverse Recovery Time ns
APTGT400A60D3G – Rev 2 October 2012

Tj = 150°C 180
IF = 400A Tj = 25°C 18.8
Qrr Reverse Recovery Charge VR = 300V µC
di/dt =4800A/µs Tj = 150°C 39.5
Tj = 25°C 4.4
Err Reverse Recovery Energy mJ
Tj = 150°C 9.6

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 APTGT400A60D3G
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.12
RthJC Junction to Case Thermal Resistance °C/W
Diode 0.20
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125 °C
TC Operating Case Temperature -40 125
For terminals M6 3 5
Torque Mounting torque N.m
To Heatsink M6 3 5
Wt Package Weight 350 g

D3 Package outline (dimensions in mm)

APTGT400A60D3G – Rev 2 October 2012

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 APTGT400A60D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics
600 600
TJ = 150°C
500 500
VGE=13V

400 400
IC (A)

TJ=150°C

IC (A)
VGE=15V
300 300

200 VGE=9V
200

100 100
TJ=25°C
0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 3.5
VCE (V) VCE (V)

Transfert Characteristics Energy losses vs Collector Current

800 35
TJ=25°C VCE = 300V
30 VGE = 15V
Eoff
600 RG = 1.5Ω
25 TJ = 150°C
E (mJ)

20
IC (A)

400
15 Err
10
200 TJ=150°C
5 Eon

0 0
5 6 7 8 9 10 11 0 200 400 600 800
VGE (V) IC (A)

Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
35 1000
VCE = 300V Eon
30 VGE =15V
IC = 400A 800
25 TJ = 150°C Eoff
600
E (mJ)

20
IC (A)

15
400
10 VGE=15V
Err 200 TJ=150°C
5
RG=1.5Ω
0 0
0 2.5 5 7.5 10 0 100 200 300 400 500 600 700
Gate Resistance (ohms) VCE (V)

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.14
IGBT
Thermal Impedance (°C/W)

0.12 0.9
0.1
0.7
APTGT400A60D3G – Rev 2 October 2012

0.08
0.5
0.06
0.3
0.04

0.02 0.1
Single Pulse
0.05
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds

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 APTGT400A60D3G
Operating Frequency vs Collector Current Forward Characteristic of diode
80 600
Fmax, Operating Frequency (kHz)

VCE=300V
D=50% 500
ZCS
60 RG=1.5Ω
TJ=150°C 400
ZVS Tc=85°C

IF (A)
40 300

Hard 200
switching TJ=150°C
20
100
TJ=25°C
0 0
0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2 2.4
IC (A) VF (V)

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.25
Diode
Thermal Impedance (°C/W)

0.2 0.9

0.15 0.7

0.5
0.1
0.3
0.05
0.1
0.05 Single Pulse
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds

APTGT400A60D3G – Rev 2 October 2012

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 APTGT400A60D3G

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APTGT400A60D3G – Rev 2 October 2012

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