SEMICONDUCTOR KTC4521

TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR

SWITCHING REGULATOR APPLICATION.

HIGH VOLTAGE SWITCHING APPLICATION. A
R
S

FEATURES

E
ᴌExcellent Switching Times.

F
D P

Q
: ton=0.5Ọ
S(Max.), tf=0.3Ọ
S(Max.), at IC=4A. DIM MILLIMETERS

B
A 10.30 MAX
ᴌHigh Collector Voltage : VCEO=500V. B 15.30 MAX
C 0.80
D Φ3.60 +_ 0.20
T E 3.00

H
F 6.70 MAX
G 13.60 +_ 0.50

G
L
H 5.60 MAX
MAXIMUM RATING (Ta=25ᴱ) C C
J 1.37 MAX
K 0.50
CHARACTERISTIC SYMBOL RATING UNIT L 1.50 MAX
M M
M 2.54
Collector-Base Voltage VCBO 800 V K N 4.70 MAX

N
1 2 3 O 2.60
VCEO

O
Collector-Emitter Voltage 500 V P 1.50 MAX
J Q 1.50
Emitter-Base Voltage VEBO 7 V 1. BASE R _ 0.20
9.50 +
S _ 0.20
8.00 +
2. COLLECTOR (HEAT SINK)
DC IC 5 T 2.90 MAX
3. EMITTER
Collector Current A
Pulse ICP 10
Base Current IB 2 A
TO-220AB
Collector Power Dissipation (Tc=25ᴱ) PC 50 W
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=500V, IE=0 - - 10 A
Ọ
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Ọ
Collector-Emitter Sustaning Voltage VCEX(SUS) IC=2.5A, IB1=-IB2=1A L=1mH, Clamped 500 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.6A - - 1 V
Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=0.6A - - 1.5 V
hFE (1) (Note) VCE=5V, IC=0.6A 15 - 50
DC Current Gain
hFE (2) VCE=5V, IC=3A 8 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 80 - pF
Transition Frequency fT VCE=10V, IC=0.6A - 18 - MHz

OUTPUT
Turn On Time ton 20µS - - 0.5
I B1
INPUT
Switching
50Ω

IB1
Storage Time tstg - - 3 ỌS
I B2
Time IB2

IB1=0.8A , I B2 =-1.6A
Fall Time tf VCC =200V - - 0.3
DUTY CYCLE < = 1%

Note : hFE (1) Classification R:15ᴕ30, O:20ᴕ40, Y:30ᴕ50

1998. 3. 13 Revision No : 0 1/2

 KTC4521

h FE - I C
I C - VCE
1000
5 VCE =5V
I B =800mA 500
COLLECTOR CURRENT I C (A)

mA
I B =1A I B =600
0mA

DC CURRENT GAIN h FE
4 I =40
B 200
I B =1.2A
100
mA
3 I B =200 50

A
2 I B =100m 20

I B =50mA
10
1 5
I B =20mA
I B =0
0 2
0 2 4 6 8 10 0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 1 5 0
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (A)

VCE(sat) , V BE(sat) - I C
V BE - I C
SATURATION VOLTAGE VBE(sat) , VCE(sat) (V)

10
I C /I B=5
5
6

2 VCE =5V
COLLECTOR CURRENT I C (A)

5
1 V BE(sat)
4
0.5

3
0.2
0.1 2
0.05 VCE(sat)
1
0.02
0
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2

COLLECTOR CURRENT I C (A) BASE EMITTER VOLTAGE V BE (V)

SWITCHING CHARACTERISTICS SAFE OPERATING AREA

10 100
50
5
t stg
COLLECTOR CURRENT I C (A)

20
I C MAX.(Pulse)
2 10 *1
SWITCHING TIME (µS)

IC MAX. (CONTINUOUS) m
*1

1 5 S
00
*1

DC
µS
0m

OP
2
S

0.5 E RA
1 TI
ON
0.2 0.5
t on tf
0.1 0.2
VCEO MAX.

0.05 0.1
* SINGLE NONREPETITIVE
0.05 PLUS Ta=25 C
CURVES MUST BE DERATED
0.02 0.02 LINEARLY WITH INCREASE
IN TEMPERATURE
0.01 0.01
0.1 0.2 0.5 1 2 5 10 1 2 5 10 50 100 200 500 1000

COLLECTOR CURRENT I C (A) COLLECTOR EMITTER VOLTAGE VCE (A)

1998. 3. 13 Revision No : 0 2/3

 KTC4521

REVERSE BIAS SAFE OPERATING AREA Pc - Ta

100 80

COLLECTOR POWER DISSIPATION P C (W)

50 I B2=-1A
L=200µH 70
COLLECTOR CURRENT I C (A)

20
10 60
5
50
2
1 40
0.5
30
0.2
0.1 20
0.05
10
0.02
0.01 0
10 20 50 100 200 500 1000 2000 5000 10000 0 25 50 75 100 125 150 175 200

COLLECTOR EMITTER VOLTAGE V CE (A) AMBIENT TEMPERATIURE Ta ( C)

1998. 3. 13 Revision No : 0 3/3

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