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    Technical Data: PNP High Power Silicon Transistor

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    Thanh Vo
    This document provides technical specifications for PNP high power silicon transistors. It includes maximum ratings, thermal characteristics, electrical characteristics, and safe operating area tests for the 2N4399 and 2N5745 transistor types.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Technical Data: PNP High Power Silicon Transistor

    Uploaded by

    Thanh Vo
    11 views3 pages
    This document provides technical specifications for PNP high power silicon transistors. It includes maximum ratings, thermal characteristics, electrical characteristics, and safe operating area tests for the 2N4399 and 2N5745 transistor types.

    Original Title

    2N4399-1593535

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    © © All Rights Reserved

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    This document provides technical specifications for PNP high power silicon transistors. It includes maximum ratings, thermal characteristics, electrical characteristics, and safe operating area tests for the 2N4399 and 2N5745 transistor types.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views3 pages

    Technical Data: PNP High Power Silicon Transistor

    Uploaded by

    Thanh Vo
    This document provides technical specifications for PNP high power silicon transistors. It includes maximum ratings, thermal characteristics, electrical characteristics, and safe operating area tests for the 2N4399 and 2N5745 transistor types.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    TECHNICAL DATA

    PNP HIGH POWER SILICON TRANSISTOR


    Qualified per MIL-PRF-19500/433

    Devices Qualified Level

    JANTX
    2N4399 2N5745
    JANTXV

    MAXIMUM RATINGS
    Ratings Symbol 2N4399 2N5745 Unit
    Collector-Emitter Voltage VCEO 60 80 Vdc
    Collector-Base Voltage VCBO 60 80 Vdc
    Emitter-Base Voltage VEBO 5.0 Vdc
    Base Current IB 7.5 Adc
    Collector Current IC 30 20 Adc
    Total Power Dissipation @ TA =+ 250C (1) PT 5.0 W
    @ TC = +1000C (2) 115 W
    0
    Operating & Storage Junction Temperature Range TJ, Tstg -55 to +200 C
    THERMAL CHARACTERISTICS TO-3*
    Characteristics Symbol Max. Unit (TO-204AA)
    3

    Thermal Resistance, Junction-to-Case RθJC 0.875 0


    C/W
    Junction-to-Ambient RθJA 35
    1) Derate linearly @ 28.57 mW/0C for TA > +250C
    2) Derate linearly @ 1.15 W/0C for TC > +1000C
    *See appendix A for
    package outline
    ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
    Characteristics Symbol Min. Max. Unit
    OFF CHARACTERISTICS
    Collector-Emitter Breakdown Voltage
    IC = 200 mAdc 2N4399 V(BR)CEO 60 Vdc
    2N5745 80
    Collector-Emitter Cutoff Current
    VCE = 60 Vdc 2N4399 ICEO 100 µAdc
    VCE = 80 Vdc 2N5745 100
    Collector-Emitter Cutoff Current
    VCE = 60 Vdc, VBE = 1.5 Vdc 2N4399 ICEX 5.0 µAdc
    VCE = 80 Vdc, VBE = 1.5 Vdc 2N5745 5.0
    Emitter-Base Cutoff Current
    IEBO 5.0 µAdc
    VEB = 5.0 Vdc

    6 Lake Street, Lawrence, MA 01841 120101


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
    2N4399, 2N5745 JAN SERIES

    ELECTRICAL CHARACTERISTICS (con’t)


    Characteristics Symbol Min. Max. Unit
    ON CHARACTERISTICS (3)
    Forward-Current Transfer Ratio
    IC = 1.0 Adc, VCE = 2.0 Vdc 40 425
    IC = 15 Adc, VCE = 2.0 Vdc 2N4399 15 60
    hFE 15 60
    IC = 10 Adc, VCE = 2.0 Vdc 2N5745
    5.0
    IC = 30 Adc, VCE = 5.0 Vdc 2N4399
    5.0
    IC = 20 Adc, VCE = 5.0 Vdc 2N5745
    Collector-Emitter Saturation Voltage
    IC = 5.0 Adc, IB = 0.5 Adc 0.55
    VCE(sat) 0.75 Vdc
    IC = 10 Adc, IB = 1.0 Adc 2N4399
    2N5745 1.0
    Base-Emitter Saturation Voltage
    IC = 10 Adc, IB = 1.0 Adc 1.7
    VBE(sat) 1.8 Vdc
    IC = 15 Adc, IB = 1.5 Adc 2N4399
    2N5745 2.0
    DYNAMIC CHARACTERISTICS
    Magnitude of Common Emitter Small-Signal Short-Circuit
    Forward Current Transfer Ratio hfe 4.0 40
    IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
    Small-Signal Short-Circuit Forward Current Transfer Ratio
    hfe 40 425
    IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
    Output Capacitance
    Cobo 1000 pF
    VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
    SAFE OPERATING AREA
    DC Tests
    TC = +250C, 1 Cycle, t = 1.0 s
    Test 1
    VCE = 6.67 Vdc, IC = 30 Adc 2N4399
    VCE = 10 Vdc, IC = 20 Adc 2N5745
    Test 2
    VCE = 20 Vdc, IC = 10 Adc All Types
    Test 3
    VCE = 40 Vdc, IC = 3.0 Adc All Types
    Test 4
    VCE = 50 Vdc, IC = 600 mAdc 2N4399
    VCE = 60 Vdc, IC = 600 mAdc 2N5745
    (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

    6 Lake Street, Lawrence, MA 01841 120101


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
    Mouser Electronics

    Authorized Distributor

    Click to View Pricing, Inventory, Delivery & Lifecycle Information:

    Microchip:
    2N4399 Jantxv2N5745 Jan2N4399 Jan2N5745 Jantx2N4399 Jantx2N5745 Jantxv2N4399

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