TI Communications Handbook Part II 1965

PRICE $2.
00
1965 EDITION
TEXAS INSTRUMENTS INCORPORATED • SEMIC N UCTOIt·COMPONENTS DIVISION
Communications
HANDBOOK
P I
TEXAS INSTRUMENTS HANDBOOK SERIES

Texas Instruments Microlibrary
John R. Miller, Series Editor
Transistor Circuit Design: Staff· McGraw-Hill
Field-effect Transistors: Sevin· McGraw-Hill

Semiconductor Materials: Runyan· McGraw-Hill (in press)
Computer Seminar: Staff
Communications Handbook: Staff
Our TI Authors: Staff
Orders for the first three titles in this list may be sent directly to:
McGraw-Hill Book Co., Inc.
Hightstown, New Jersey
Orders for the other titles may be. sent to:
Inq uiry Answering Service
Texas Instruments Incorporated
P.O. Box 5012
Dallas, Texas
Communications
Handbook
PART II
Prepared by the Engineering Staff of
Edited by
John R. Miller
Technical Publications Manager
Contributors
Harry F. Cooke
Bob Crawford
Ralph Dean
Stan Holcomb
George Johnson
Peter Norris
Frank Opp
L. J. Sevin
Ted Small
Bill Tulloch
Roger Webster
~
TEXAS INSTRUMENTS
INCORPORATED
SEMICONDUCTOR-COMPONENTS DIVISION
POST OFFICE BOX 5012 • DALLA,S 22. TEXAS
COMMUNICATIONS HANDBOOK
Copyright © 1965 by Texas Instruments Incorporated. All Rights

Reserved. Printed in the United States of America. This book,
or parts thereof, may not be reproduced in any form without
permission of the publisher, Texas Instruments Incorporated;
5C-6219 -II
Information contained in this book is believed to be

accurate and reliable. However, responsibility is assumed
neither for its use nor for any infringement of patents or
rights of others which may result from its use. No license is
granted by implication or otherwise under any patent or
patent right of Texas Instruments or others.
Preface
Communications Handbook, Parts I and II, are the first two paperback volumes
in the Texas Instruments Microlibrary. The objective of the Handbook is to give
the communications circuit designer as much useful and current information as can
be supplied in a work of 400 pages. Obviously, we cannot hope to present compre-
hensive coverage of the vast communications field; instead, we have tried to include
material that has proved to be of current interest, as evidenced by reactions to
papers delivered at Texas Instruments technical seminars, acceptance of our monthly
Technical Newsletter, and requests from customers for special information.
New editions of the Handbook will be published periodically, to reflect improve-
ments in design techniques and devices.
Please send any queries regarding material in this Handbook to the individual
author, in care of Texas Instruments Incorporated, Post Office Box 5012, Dallas,
Texas 75222.
Semiconductor-Components Division
iii
Contents
Chapter 1. Noise Characterization 1

Introduction 1
Noise Characterization 1
General Considerations in Low-noise Design 14
Terms Defined 15
Bibliography . 16
Chapter 2 Transistor Gain Control 19

Introduction 19
External Gain Control 19
Internal Gain Control 20
Hybrid Gain Control 22
Gain-controlled Amplifier Stages. 22
Comments . 35
Bibliography 36
Chapter 3. RF Harmonic Oscillators. 37

Oscillator Configurations 37
Tank Circuit 41
Active Device . 44
Frequency Stability 44
Oscillator Design Procedure 47
Design Example . 47
Additional Circuits and Performance 49
Bibliography . 50
v
Contents
Chapter 4. Transistors in Wide-band Low-distortion Amplifiers . 53

Introduction 53
General Considerations. 53
Distortion Analysis . 54
Circuit Arrangements for Distortion Reduction 58
Bibliography . 59
Chapter 5. VHF and UHF Amplifiers and Oscillators

Using Silicon Transistors . 61
Introduction 61
The TI 3016A and 2N3570 . 61
large-signal Behavior of TI 3016A 63
Application of the TI 3016A and 2N3570 . 64
Bibliography . 77
Chapter 6. Causes of Noise 79

Introduction 79
Types of Noise 79
Noise Sources and Equivalent Circuits . 83
Chapter 7. Transistor Noise Figure 91

Introduction 91
Thermal Noise 92
Shot Noise . 92
Transistor Noise-figure Equation, High Frequency 94
Noise Figure Calculation 96
Optimum Noise Source . 98
Transistor Noise Figure, Medium and low Frequencies. 98
Bibliography . 99
Chapter 8. Communications Circuit Applications 101

low-level low-frequency Amplifiers 101
RF Amplifiers . 108
Oscillators, Mixers, and Converters . 112
IF Amplifiers . 118
Power Amplifiers. 126
Transmitters 134
vi
Contents
Chapter 9. Device Nomenclature and Standard Test Circuits. 139

General Principles of Letter Symbol Standardization 139
Definitions and Test Circuits . 141
Chapter 10. Noise Figure Measurement. 155

200-mc NF Measurement 155
1-Gc NF Measurement . 158
Chapter 11. Power Oscillator Test Procedure 163

1-Gc Power Oscillator Test. 163
1- to 4-Gc Power Oscillator Test. 164
Index 171
vii
ANjVRC·12 field radio, using TI transistors and diodes, was developed and is being
produced by AVCO Electronics Division, Cincinnati, Ohio. (U.S. Army photograph)
1
Noise Characterization
by Bob Crawford
INTRODUCTION
This chapter covers some of the general considerations involved in the design
of low-noise linear amplifiers. The en, in method and the direct NF method of
characterizing or presenting noise performance are covered. A method of noise
characterization for the 1/f region is covered. The effect that correlation between
generators has on NF is explained.
NOISE CHARACTERIZATION
en, in Method. For noise considerations, any linear two-port network or ampli-
fier may be characterized by a series noise-voltage generator and by a parallel
noise-current generator at the input. Figure 1 shows a noisy amplifier together
with its representation by a noiseless amplifier with en and in brought out front.
The term 'Y indicates the amount of correlation between the two generators. Rin
is the input resistance of the amplifier.
Measurement of en and in is straightforward. For measurement of en, the input
term.inals of the network must be short circuited with a resistor value (Rshort)
that meets these two inequalities:
Rshort < < Rin
and
inRshort << en
Rin + Rshort Rin + Rshort
The first condition assures that all of the generator voltage en will appear across
the amplifier input. The second requirement limits the amount of signal current
contributed by in. The Output of the amplifier, as measured with a true-reading
rms voltmeter, is divided by the gain of the amplifier to give the input series
noise-voltage generator.
1
2 Communications Handbook
NOISY
o
AMPLIFIER
NOISELESS
AMPLIFIER
~~-----------e~----+-~
Figure 1
In the measurement of in, it is necessary to open-circuit the input of the ampli-

fier with a resistor (Ropen) so the two fallowing inequalities are met:
Ropen» Rin
and
inRopen >> en
Rin + Ropen Rin + Ropen
It is necessary that the gain of the amplifier be high so that any noise introduced
in the following stages will be small compared to the input noise.
Now, assuming en and in are known, the noise factor of the amplifier can be
calculated. Defining noise factor as
Total noise power output
F = Power out due to the thermal noise generated by Rg ( 1)
then by substituting en and in into Eq. (1), an expression for noise factor is
derived:
F = 1 + 4k~aF (in2Rg + ~: + 2yenin ) (2)
where k = Boltzmann's constant = 1.38 X 10.23 Joules/oK

T = temperature in degrees Kelvin = 273 + °C
aF = noise power bandwidth
y = correlation coefficient
4kT = 1.66 X 10-20 watt-seconds at 25°C
Note that Eq. (2) is independent of Rin because it is a noiseless resistor. The
input resistance for a common-emitter stage is approximately hfere. Because re
is not a real resistance it generates no thermal noise. Any noise generator within
the emitter junction has already been taken into account by the two noise gen-
erators.
Communications Handbook 3
Since F is a function of the generator resistance, Rg may be varied to find the
minimum (or optimum) noise factor. This may be done in one of two ways:
( 1) F may be differentiated with respect to Rg. The result is then set equal to
zero. Solving for Rg will yield an optimum. value of source resistance, R(oPt). Sub-
stituting R(opt) into the general equation for noise factor yields the minimum
noise factor (for a given bias level).
(2) The minimum noise factor occurs when each generator contributes equally
to the total noise power. Looking at the first two terms within the parentheses of
Eq. (2), it is noted these have the dimensions of power. Setting these two terms
equal and solving for Rg yields the optimum generator resistance:
en
R(opt) = -;-
in
(3)
Substituting Eq. (3) into Eq. (2) yields the minimum or optimum noise factor
obtainable, F(oPt).
enin
F(opt) = 1+ (1 + '}') 2kTaF (4)
Note that F(oPt) depends upon the product of en and in, while R(opt) depends upon
the ratio of en and in. The dependency of NF upon Rg can be seen in Fig. 2.
Figure 2a is for a conventional transistor while Fig. 2b is for a field-effect tran-
sistor. Notice the lower current levels at which the2N930 is run and the higher
optimum source resistance for the 2N2500. Figure 2a also gives typical values for
the en and in generators for the 2N930.
The quantities en and in are functions of IE and therefore F is valid only at the
bias condition at which en and in are m.easured. These two generators are fairly
independent of collector voltage for voltages below six to ten volts.
2N930
VCE = 5v
~12r-~--------~----------~
I
Q)
TA = 25°C
lo..
::J
C'I
II..
.~ 8 ..........r-'~-T--+-------I------~
o
Z
-c
c
a
.Q
"84
o r----~~~~--~~-r_-~---~
lo..
ID
I
II..
Z
0~~~~~~~~~2=~
0.1 10.0 100.0
Rg - Generator Resistance - MQ
Figure 2a
10
2N2500 -
.c
"D VOS = -5v
I 8 -
CI)
!o..
::l
i\. 10 = -1 rna
-
= 1 kc
6 '\.
0\ f
LL. -
T A = 25° C
" "-
CI)
VI
z0 4
'\.
15Q.
'"
LL.
z
2
"~ ........... ~
~
0
0.0 l.l .0 1
Rg - Generator Resistance-M'o'
Figure 2b
Equation (4) states that, for a low noise factor, I' should be as small as possible.
The significance of the correlation factor and its effect in a circuit can best be
explained by an example where two generators are in series across a load (Fig. 3),
each with an rms amplitude of a. The two extreme cases of I' will be examined.
In the first case, let the two generators be of differing and randomly related fre-
quencies, i.e., no correlation (I' = 0); while in the second case, I' = unity, i.e., the
generators have identical frequencies and phase. With I' = 0, the two voltage
vectors add in quadrature, so that power into R is proportional to a2 + a2 =2a2.
When I' = 1, the two generators are of the same frequency and exactly in phase.
Their amplitudes can be added directly, that is, power into R is proportional to
the quantity (a + a)2 = 4a2. Taking the ratio of the two cases where I' = 1 and
0, the power output in the first case is twice that of the second case.
2·a = Voltage Across R.,,= 1
Figure 3
Considerations!' of y. Since F depends upon y, it will be interesting to
investigate the dependency of the correlation coefficient upon transistor param-
eters. Noise factor as a function of y, en and in has already been described in
Eq. (2). Noise factor in terms of transistor parameters has been given in the
literature by Nielson2, and is presented below:
r'b re (r'b + re + RG)2
F = 1 + Rg + 2Rg + 2ao2RgrehFE (5)
Equating Eq. (5) to Eq. ( 2) and letting Rg ~ 0, and Rg ~ 00, yields values for
en and in, respectively. These values are given in the following two equations:
en2 = 4kTM [r'b + re + (re ~ r'b) 2] (6)

2 2ao rehFE
(7)
Substituting these values into Eq. (2) and solving for y:
r'b +1
re
(8)
y= ~(~: +~) (2ao2 hFE) + (:: + ly
In Fig. 4, Y is plotted as a function of hFE with r'hlre as a running parameter
to describe a family of curves. At low emitter currents, re > > r'b, and y reduces to:
1
y~ V hFE
Figure 4
*Superscript numbers refer to bibliography entries at end of chapter.
Thus for large values of current gain, 'Y can be very small. Curves 1 and 2 of Fig.
4 would apply to most of the situations where a transistor is biased for low-noise
operation. For current gain> 100, 'Y < 0.1. The following table will serve to
illustrate the effect that 'Y has upon NF.
Table J
NF F
'Y = a 1.5 db 1.41
'Y = 0.1 1.62 db 1.45
'Y = 1.0 2.64 db 1.82
It is obvious from the curve of Fig. 4 that a high current gain device is desirable
for low-noise operation. Figure.5 shows the distribution of 1398 2N930's at three
different current levels. Notice the very high hFE, averaging around 200 (even
at 10 /-La).
NF Measurement. The following measurement in the audio range is one of
the easiest noise measurements to make. It lends itself to the testing of large quan-
tities of transistors. Once the measurement system has been set up, no calculations
are necessary and NF is read directly.
The fundamental principle of this method lies with the basic definition of noise
figure in Eq. (9):
Sp in
N p in
NF = 10 loglO -S-- (9)
pout
Npout
2N930 1398 Devices 1 Nov 62

600 I I I I I II I I II I I
10pa 500pa
~~
10 ma
~
u 500
0
&I)
N
~
!;;
~~~
II
CC 400
~~ Fol-
~
E ~
> E ~
&I)
II
w 300 ~~ ~
~
u F=
> F=
w 200
IL.
~
5% 10% 0% 5% 10% 0% 5% 10%

Percent of total number of units
Figure 5
where Sp in = Signal power in
N p in = Noise power in
Sp out = Signal power out
N p out = Noise power out
Since each signal and its associated noise work into the same load, the expression
for NF can be written in terms of voltage rather than absolute power.
Si
Ni
NF = 20 IOglO"""S:"" (10)
No
where Si = Signal voltage in
Ni = Noise voltage in
So = Signal voltage out
No = Noise voltage out
Equation (10) can be written in the following form:
Sin So
NF = 20 log -N0 - 20 log -N ( 11)
m 0
If the source resistance Rg is known, then the input noise to the amplifier can be
calculated by the relationship Ni = V 4kTMRg. By setting the input signal 10
times greater than the input noise, the first term on the right side of the equation
reduces to 20 db.
So
NF= 20db-20log No (12)
With a noiseless amplifier, the second term would also be 20 db, indicating that
the noise figure of the amplifier is zero. In an actual amplifier, the second term
will be something less than 20 db - say, 19 db - making the amplifier NF = 1 db.
Figure 6 shows a test set-up for the described noise measurement. The audio
oscillator at the input supplies a signal ten times greater than the input noise pro-
duced by Rg. Depending upon the amount of available power gain or the output
signal level of the network under test, the low-noise amplifier mayor may not be
needed. The bandwidth is set by the filter. Potentiometer Rl allows the VTVM
to be adjusted to a convenient zero point (or varies the system gain). Output levels
are observed with an oscilloscope to be sure that no dipping or stray 60-cyde
pickup occurs within the circuit.
A step-by-step procedure for measuring noise figure is as follows:

1. Calculate input-noise voltage. Ni = V 4kTAfRg.
2. Set signal level equal to ten times (20 db) the noise level.
3. Adjust Rl so that the VTVM reads 10 db on some convenient scale.
4. Reduce the input signal to zero and note how many db the meter falls.
5. Subtract the meter drop (in db) from 20 db to obtain the NF of the
amplifier.
Audio R Amplifier Low-

Oscillator 9 Under Test Noise Filter
-Nt/t- ... Amplifier r-.
Spi_i. Sin I
NF = 10 log 'YNpjn =20 log YN in
Spo/N So/N
7 r Po Iro
NF=20 log~-20 log~
f'fin No
S
NF = 20 db - 20 log -2..
NO True -
Reading
~rmsVTVM
Oscilloscope (Ballantine
320)
Figure 6
Referring to Eq. (12), steps number 1 and 2 set the 20-db term. Steps 3 and 4
determine the output signal-to-noise ratio (20 log So - 20 log No). Step 5 subtracts
the last term from the 20-db term, thus yielding NF.
In making noise measurements, a true-reading rms voltmeter (such as a Bal-
lantine model 320) must be used. An average, or peak-reading, rms calibrated
meter will give erroneous readings (unless suitable correction factors are used).
Some comment should be made on the accuracy of this method of measurement.
This method is based upon the assumption that the output signal and noise can
be measured separately (Eq. 12). This is not exactly true. The signal can be
removed while reading the output noise; however, the noise cannot be turned off
while measuring the output signal. In effect, the measured value of the output
signal will also include the output noise. The last term in Eq. (12) is therefore
changed to
20 log ylS02 + N02 INa
(The numerator is written in this form. because "The rms value of the total wave
is the square root of the sum of the squares of the rms values of the components.")
The error in this measurement may be figured by first calculating the measured
noise figure (NFm) and subtracting this from the true noise figure (NFT).
Error db = NFT - NFm = 20 log '\JI( No

So)2 So
+ 1- 20 log No (13)
To keep the error to a minimum, the signal-to-noise ratio should be as large as

possible. The larger the SolNo is, the less difference there is between the two terms
in Eq. (13).
Equation (13) is plotted as a function of NFm (Fig. 7). From this curve, the
true noise figure may be obtained by adding the error (in db) to the measured
noise figure. Two curves are shown in Fig. 7. The first curve is for the case where
the input signal-to-noise ratio is selected to be 20 db while the second curve repre-
sents an input signal-to-noise ratio of 30 db. Each 10-db increase in the input
signal-to-noise ratio transposes the curve 10 db to the right along the abscissa. For
a 20-db input signal-to-noise ratio, transistor noise figures may be measured up to
10 db with less than O.5-db error. This may be acceptable since the overall error
of the equipment may be greater than 0.5 db anyway. Convenient levels for the
input signal-to-noise ratio are 20 db and 40 db because they set the signal an even
10 times and 100 times greater than the noise.
The above method can be used for the broadband noise measurement (3 db
down at 10 cps and 10 kc) or the spot noise measurement (narrow bandwidth).
Because of the limited bandwidth in the SpOt noise method, the input signal and
noise powers are greatly reduced as compared to the broadband measurement. Thus
more gain will have to be supplied to increase the output to measurable levels.
As bandwidths narrow, the time required to average the output readings increases.
If the bandwidth is sufficiently small, an integrating circuit with a fairly long time
constant may be required on the rms meter monitoring the output.
l/f Region. As operation in the audio range is pushed to lower frequencies
the observed noise figure is seen to increase. The noise increase approaches a
- 3 db/octave slope asymptotically as frequency decreases. The 1/f noise curve in
effect gives an indication of the relative amount of power that each noise generator
at each frequency is capable of delivering. Thus, the noise power at 50 cps is twice
the noise power at 100 cps (assuming these points are well within the 1/f region).
The characteristic dependence of noise on frequency in this area labels this noise
as 1/f noise. Since it is difficult to relate 1/f noise analytically to specific transistor
parameters, empirical methods must be relied upon to furnish the desired informa-
tion necessary to characterize this region.
3
.g
"D
I
~2
/
o
~
~
I.IJ
20db
./
/
1
V 30db
o 2 4 6--- ~
8 10 12 14
NF measured db
16 18
~
2
Figure 7
Of the various methods of noise characterization for the l/f region, the most
complete would be a spot noise check at a number of frequencies from well within
the 1/f region to well within the plateau region. This method would plot out the
actual NF curve and give detailed information at any frequency. This is not a
practical method because of the time and cost involved in making a large number
of noise measurements. (It is routinely done, however, on limited sample quantities
for typical curves for the data sheet.)
Specifying the NF by the above method, but restricting the number of specified
points to three yields a practical and very useful characterization. Of the three
points selected:
1. One should be well within the 1/f region
2. One should lie on the "knee" of the curve
3. One should lie well within the plateau region
From these three points a fairly accurate picture of the low and middle frequency
regions of the NF curve can be drawn. Figure 8 shows a typical curve drawn from
three known points. A fourth point is actually also known. Considering the two
asymptotes (1/f and plateau), the actual NF will be approximately 3 db higher
than the cross point. Figure 9 shows a portion of the 2N2586 data sheet with the
spot noise measurements. The three selected frequencies are 100 cps, 1 kc and 10 kc.
A wideband NF is also given.
Specifying the noise corner frequency (the frequency where the NF is up 3 db
from the plateau region) of transistors is not as useful a method as it might seem.
NF
-3 db/Octave
, Log 1 - - t -
1/1 Region
Figure 8
TENTATIVE DATA SHEET

TYPE 2N2516 .--r.M
N-P-N DOUBLE-DIFFUSED PlANAR SIlICON TRANSISTOR ~
FOR EXTREMELY-LOW-LEVEI,
LOW-NOISE. AMPI.IFIIII Al'l'UCATIONS
• GuaranlHd V..,-La...c:_ h .. -lOmin at II'"
• GuaranlHd Law-Tomporalurt h.. -40 min at 101''' - 55·C
• Com...... Noise Chtractwilation at Il'a ..... 101'"
• Optional Pack.. Awaila"'. t
environmental tests
To ensure maximum integrity. stability, and long life, all finished transiltan are su~ to IUIIainecI
acceleration at a minimum of 35,000 G and verification of hermetic seal by the u.. of both helium ....
and bubble testing.
_chanlcal data
·YIIE CGLLEClOI 1$ II ELEClIICAL

COITACT'ITJI THE CASE.
·AIIJEIUJO.lI ..i. . . .
............11_1•.
ALL tlIEIUIOIIS'IE III nKHES

U.LESS OTNEI.ISE SPECIFIED.
*ablOlute maximum ratings at 25°C free-air temp.rature (unl." otherwise noted)

Collector-Base Voltage . . . . . . 60.
Collector-Emitter Voltage (See Note 1). . . . . . . . . . • . • • 45.
Emitter-Base Volta9~. . . . . . . . . • . . . . • . . . . . 6.
Collector Current • • . • . • . • . • •
• • • • • . • • • • 30m.
Totol Device Dissipation at (or below) 25 C Free~Air Temperature (See Note 2) .
D
.O.3w
Total Device Dissipation at (or below) 25 D C Case Temperature (See Note 3) • .O.6w
Operating Collector Junction Temperature . 175D C
Storage Temperature Range . . . . . . . . . . . . . . . . . - 65'C to + 300'C
NOTES, I. ThflvalueapplillwhHI"IIIIIUI..-hlldladeilopencircuittd.
Z. Dnat.linearl, 10 I1S DC fr..·.lr ttm~raturl,f"" ral, of 2.0 IJIwjC D.
3. DlfGI.lineariytol1S D CcGlltlllllPftalure alth.rltl of 4.0 IfIIWj(D.
4. TiteR par.m.ters mllli be mtlllurec1 usIng purlf IKhniquls. PW = lOG pl., Dul, (rei. ~ 1%.
tEltelri!IU, Idtnl!(ol Ircmlislors are ,bo availabl. upon requtlt In 10-J peI'.q" wilb Ittt "live """lilts 1II1II1.1" fnm !hi (lit.
·rndl(lI15JEDEC''9ill"ldd.ll.
...
~ TEXAS INSTRUMENTS
INCORPORATED
13500 N CENTR"L. EIlPRESSW"'V
P 0 BOil 5012 • c ... L.L. ... s 22. TEIl ... S
Figure 9
Two noise figure curves are shown in Fig. 10; one is for a high current gain device
and the other is for a low current gain device. Both devices have the same l/f
characteristics and differ only in the plateau region. The figure shows that the
higher current gain device will have a higher corner frequency (tc) even though
its noise performance is better than the low current gain device at all frequencies.
The point where the -3 db/octave asymptote crosses the 0 db NF line is labeled
fn and is a function of only the 1/f noise. The point fn would be independent of
the plateau NF.
It should be noted that all of the curves in the 1/f noise region have assumed
a constant bias point and R g • This condition will not necessarily give optimum NF
performance in the 1/f region. Consider for a moment a field-effect transistor. Since
the 1/f noise comes from essentially one source, its representation can take the
form of a single noise voltage generator in series with the input. This generator
is considered in series with the en generator already mentioned. As operation is
moved lower in frequency, the total voltage in series with the input increases. As
ell increases, the optimum source resistance will also increase to yield the optimum
value for NF. (Alternatively, Rg may be held constant while bias current is de-
creased).
To illustrate this point, a curve (Fig. 11) of en and in as a function of frequency
is given for the 2N2500 field-effect transistor. Notice the marked increase in en
at low frequencies. Figure 12 illustrates the two cases where: first, 1/f curve was
derived for a constant R g, and second, Rg was selected for Rg(oPt) for each
frequency.
-3 db/Octave
LOW CURRENT GAIN

NFmi
1\
I \
______ ~-~,,-_-- HIGH CURRENT GAIN
NFmi
I 1\
I I \
Octb
Log f
Figure 10
N N
"- "-
1/1
1/1
B- B-
"- 0.25 2N2500 0.05-;'
> Q.
il
CD
VOS =-5 v
...a
'0
01
0.20
'0 = -1 ma
0.04i
~
~
> U
::J
CD 0.15 0.03CD
1/1
1/1
0
Z T A = 25 0 C 0
Z
!; 0.10 0.02!;
Do
c Do
c
.~ .,;
[~n2J
::J
a- 0.05 1/2 0.01"5
"-I a-
I "-I
I
N
"- 0 ~
0.01 0.1 1.0 10 r.---,
.I~E,
liNe'
1 - 1requ~cy - kc
~
Rg(opt 10r
1/1 regionl
- - -
Figure 11
01
2N2500 EI
VOS= -5v
12 c~
10= 1 ma ...a
1/1
T A = 25 C
0
10 'iii
CD
..c 0:
-a ~
I
CD 0
8 1;;
~
::J ~
- 01
CD
1/1
0
6
CD
c
CD
C)
E
z 4 E
::J
...
Do
0
2 I
...
8-
a a 0:
01
0.01 0.1 1.0 10
1-1requency-kc
Figure 12
GENERAL CONSIDERATIONS IN LOW-NOISE DESIGN
Bias Point. Since NF is a function of IE, care must be taken to bias the tran-
sistors for low-noise operation. In general, the bias current for best low-noise
operation will lie somewhere between 10 /La and 200 /La. A specific bias point will
call for a specific Rg to give minimum NF. As IE decreases, this value of Rg
usually increases.
In designing low-noise stages certain conditions are usually fixed so the designer
does not have complete freedom in his design. If Rg is specified, the designer must
select the device and bias current that will give the best low-noise results; how-
ever, the device and bias point may not be compatible with other circuit features
such as stability and frequency response. When this occurs, compromises must be
made: If the design calls for IE = 10 /La for low-noise considerations, and the leak-
age current becomes lO/La at elevated operating temperatures, it is obvious that
a higher bias current must be used (sacrificing noise performance). See Fig. 13.
Devices. Figure 14 shows the noise figure of several TI devices as a function
of frequency. The right device for any application will depend upon a compromise
between circuit performance and cost.
_lJr.!t~t~~ - - - - - - _ _ , en2
i!,\ >---e--...,
L ___________________ ~
F2
F TOT AL = F 1 + 1<1
WHERE K = Rg RL h f 2\2= AVAILABLE POWER GAIN
1 (R g +R in ) OF THE FIRST STAGE
Figure 13
OL-____ ~ ____ ~~ ____ ~ ____ ~ ______ ~ ____ ~
1"- 101'\.., 100,"", 1 ke 10 ke 100ke 1000ke

FREQUENCY
Figure 14
TERMS DEFINED
a -constant
ao -low-frequency, common-base, a-c, current gain
at - effective noise bandwidth
- thermal noise generator associated with the load resistor
- noise voltage generator
- noise factor
- corner frequency, NF curve has increased 3 db from the plateau
region
fn - frequency at which the 1/f asymptote crosses the zero-db axis
Fopt - optimum or minimum noise factor
egn - thermal noise generator associated with the generator resistor
'Y - correlation factor
hfe - a-c current gain, common-emitter
hFE -d-c current gain, common-emitter
ho - output admittance of a transistor
in - noise current generator
k -Boltzmann's constant
NF - noise figure, NF = 10 log F
NFm - measured noise figure
NFT -true noise figure
Ni -noise voltage in
No -noise voltage out
N p in - noise power in
N p out - noise power out
Rg - generator resistance
Rin - input resistance
Ropen - resistance that simulates an open circuit
Ropt - optimum generator resistance that gives minimum noise figure
Rshort - resistance that simulates a short circuit
r'b - ohmic base resistance in transistor equivalent circuit
re - incremental emitter resistance in transistor equivalent circuit
Si - signal voltage in
So - signal voltage out
Sp in - signal power in
Sp out - signal power out
T - temperature in degrees Kelvin T = 273 + °C
BIBLIOGRAPHY
"A Simplified Noise Theory and Its Application to the Design of Low-Noise
Amplifiers," A. E. Sanderson and R. G. Fulks, IRE Transactions Audio, July-
August, 1961, pp. 106-108.
1. "On the Two-Generator Method (en, in) of Noise Characterization," H. Cooke,
Proc. IRE, Dec. 1962, pp. 2520-2521.
"Optimum Noise Performance of Transistor Input Circuits," Middlebrook,
Semiconductor Products, July/August 1958, pp. 14-20.
"Noise Figure of Radio Receivers," Friis, Proc. IRE, Vol. 32, July, 1944,
pp. 419-429.
"Design Considerations for Low Noise Transistor Input Stages," W. A. Rhein-
felder, Electronic Design, Sept. 13, 1961, pp. 48-52.
"Interpreting Transistor Noise Performance," 1. Calgano and R. E. Hobson,
Electronic Industries, October, 1951, pp. 109-112.
"Notes on Transistor Noise- What It Is and How It Is Measured," Norman
H. Martens, Solid/State/Design, May, 1952, pp. 35-38.
2. "Behavior of Noise Figure in Junction Transistors," Nielson, Proc. IRE, July,
1957, pp. 957-963.
Transistor Electronics, Dewitt and Rossoff, Chapter 16, McGraw-Hill Book
Co., New York (1957).
"Noise in Precision Film Resistors," Smith, Texas Instruments publication
(August, 1961).
Transistor Technology, Vol. 1, pp. 543-558, Bridgers, Schaff, Shive, D. Van
Nostrand Co., Inc., New York.
"Transistor AC and DC Amplifiers with High Input Impedance," Middlebrook
and Mead, Semiconductor Products, March 1959, pp. 30-32.
"A Recommended Standard Resistor, Noise Test System," Conrad, Newman,
Stansbury, IRE Transactions on C. P., September 1960, pp. 71-88.
"Noise Figure of the Darlington Compound Connection for Transistors,"
Bachmann, IRE Transactions on C. T., June 1958, pp. 145-147.
Fluctuation Phenomena in Semiconductors, A. Van Der Ziel, Academic Press,
Inc. (1959).
"Noise Aspects of Low-Frequency Solid-State Circuits," A. Van Der Ziel, Solidi
State/Design, March 1962, pp. 39-44.
"Theory of Junction Diode and Junction Transistor Noise," A. Van Der Ziel,
Proc. IRE., March 1958, pp. 589-594.
"Noise in Junction Transistors," A. Van Der Ziel, Proc. IRE, June 1958, pp.
1019-1038.
"Transistor Noise Figure," Harry F. Cooke, Texas Instruments Inc., Solid/State/

Design, February 1963, pp. 37-42.
"Transistor Noise Factor Tester," James J. Davidson, Semiconductor Products,
February 1959, pp. 15-20.
Transistor Circuit Analysis, Joyce and Clark, Chapter 7, Addison-Wesley Pub-
lishing Co., Reading, Mass. (1961).
"Representation of Noise in Linear Two-Ports," H. A. Haus, Proc. IRE, Jan.
1960, pp. 69-74.
"Optimum Noise Figure of Transistor Amplifiers," F. M. Gardner, IEEE Tran-
sistors on C. T., March 1963, pp. 45-48.
Acknowledgement. The author wishes to thank Harry Cooke for his helpful
suggestions and valuable technical advice.
Advanced optical communications systems for the space age are being investigated
at TI.
2
Transistor Gain Control

by Bill Tulloch
INTRODUCTION
Amplifiers are usually designed to meet predetermined gain, pass-band, and
noise requirements. Additional requirements are created when these amplifiers are
used as integral parts of a system. The requirement discussed here is the ability of
a system to handle input signals that have wide dynamic ranges. A receiver that is
capable of receiving input signals from several microvolts to several hundred milli-
volts without distorting the intelligence is. an example of such a system.
To meet this requirement the designer provides a means of controlling the gain
of the individual amplifier stages. This is accomplished by the use of feedback to
automatically control the bias of the amplifier. The gain of a transistor amplifier
can be controlled by three methods: external gain control, internal gain control, or
a combination of external and internal control called hybrid gain control.
EXTERNAL GAIN CONTROL

External gain control is accomplished by reducing the signal available to either
the input or the output of the amplifier. Three examples of external gain control
are presented in Fig. 1. Figure Ia is of the input shunt type, in which the control
element reduces the signal available to the input of the transistor, thereby reducing
the effective gain of the stage. The output shunt type is shown in Fig. Ib; in this
type, the gain is reduced by decreasing the collector a-c impedance. In Fig. Ic the
control element is used to provide emitter degeneration to reduce the gain of
the stage.
The major disadvantage of external gain control is the additional components
needed for the separate biasing of the control elements. Since the characteristics of
an external-gain-controlled amplifier are only slightly dependent on the charac-
teristics of the transistor, the balance of this discussion deals with internal and
hybrid gain control methods.
19
CONTROl
ELEMENT
(0)
SHUNT INPUT
(c)
EMITTER DEGENERATION
Fig. 1. Types of external gain control.
INTERNAL GAIN CONTROL

The internal gain control characteristics of a transistor amplifier may be pre-
dicted, given sufficient knowledge of the parameter variations versus bias. To
obtain this information it is necessary to measure parameters of a number of tran-
sistors at various operating conditions for the frequencies of interest. The amplifier
gain is then calculated at each bias point using conventional design techniques.
It is enormously time-consuming to evaluate each amplifier to be designed for
gain control.
Another method of evaluation is to design the amplifier for the desired gain,
pass-band, and noise requirements using the manufacturer's recommended bias
conditions. Once the amplifier has been constructed, the gain control characteristics
may then be measured rapidly. This is the technique used in obtaining the curves
presented later. There are three types of transistor internal gain control: forward,
reverse, and tetrode.
Forward gain control is accomplished by varying the collector-base (or collector-
emitter) voltage in accordance with the collector current. Figure 2 is a diagram
of a forward-gain-controlled amplifier. The collector current increases as the AGe
voltage is increased and VCB is reduced due to the additional voltage developed
across Re. The output impedance of the transistor is considerably reduced at the
high-current low-voltage conditions, so an increase in bandwidth is to be expected.
The other transistor parameter variations are dependent on the type of transistor,
frequency of operation, and circuit q)mponents. Forward gain control usually
accepts larger input signals as the gain is reduced.
Figure 3 is a diagram of a reverse-gain-controlled amplifier. The gain of such
an amplifier is reduced by decreasing the collector current with the collector volt-
age remaining relatively constant. There is no collector dropping resistor (Rc)
AGe
VOLTAGE '"ee
Fig. 2. Forward gciin control.
AGe VOLTAGE Vee
Fig. 3. Reverse gain control.
for this type of control. The bandwidth change is less with reverse gain control
than with forward gain control; however, reverse gain control amplifiers have a
decreasing input signal capability as the gain is reduced.
Figure 4 is an example of a tetrode:gain-controlled amplifier. Tetrode gain con-
trol is obtained by varying the base-2 current. The base-2 current for gain control
ranges approximately from -100 to + 100,ua depending on the frequency of
operation and the desired gain range. A tetrode gain control amplifier uses less
AGe power than the other two types and will handle increasingly larger input sig-
nals as the gain is reduced.
AGe Vee
VOLTAGE
Fig. 4. Tetrode gain control.

Vee
AGe
VOLTAGE
Fig. 5. Hybrid gain control.

HYBRID GAIN CONTROL
There are systems that demand the acceptance of maximum input signals of one
to ten volts. None of the internal gain control types will perform this function. By
using a transistor for the control element as shown in Fig. 5, it is possible to control
the gain by two methods simultaneously. For maximum gain conditions, Q2 is in
saturation and Q1 is biased for the desired gain and noise requirements. For gain
control, the AGe voltage is changed so that Q2 is brought out of saturation. The
output impedance of Q2 is increased as the collector current is decreased, providing
emitter degeneration. At the same time, the collector current of Q1 is also being
reduced, giving reverse gain control action. This type of gain control has two
advantages: a greater reduction in gain is possible in this type than with the reverse
gain control only. Second, the capability of handling input signals of a large mag-
nitude is available due to the increasing emitter impedance. The noise figure of this
method of gain control usually is no more than 1 db greater than that of the basic
amplifier at the same bias conditions.
GAIN-CONTROLLED AMPLIFIER STAGES

Six transistor amplifiers are presented to demonstrate the different methods of
gain control. The gain, bandwidth, and center frequency characteristic curves are
shown so that comparisons may be made. Maximum gain in the forward and reverse
gain control curves are at the same bias point. The noise figures discussed are
measured at this bias condition. Noise figure is of primary interest only at this
point since at the reduced gain levels the signal-to-noise ratio is larger. Insertion
gain is defined as the ratio of the output power to the generator power into the same
load. Maximum input signal capability is defined as the RMS signal measured at
the input of the amplifier that will result in a 0.75-db change in the output power
with a l-db input power change.
Figure 6 is a schematic of a 30-mc amplifier. This amplifier is used to evaluate
both reverse and forward gain control characteristics. Rc is zero ohms for reverse
gain control and 1000 ohms for forward gain control. The gain is 15 db with a
typical noise figure of 5 db. Figure 7 shows that the reverse gain control range is
25 db from a collector current of 1.5 milliamps to 20 microamps. Figure 8 shows
the pass-band characteristics with f1 and f2 being the lower- and upper-half power
frequencies, respectively. Center frequency is indicated as f o• Bandwidth change is
less than 2: lover the range shown.
2S00pf
SO.n 680pf SO.n

SOURCErl--t----.--H LOAD
9-180
pf
Re
On FOR REV. GAIN )
( CONTROL -Iooon FOR
+ _ FWD. GAIN CONTROL
AGC VOLTAGE Vee
T( - NI .,Ot#30WIRE
TYPICAL PERFORMANCE Nz- 3t#30WIRE
BI FILAR WOUND ON
VCB--9vi Ic=-I.Sma CTC'" PLS62C4L/20063D
COIL FORM
GAIN-ISdb
NF-Sdb L( - 6t AIR DUX'" 408
Fig. 6. 2N2189 30-mc amplifier.
(5r_------,------r-----.------~r_------~--,
10
z
~ 0
z 2N2189
o
i= f· 30 mc
:!} -5
II)
Z
Vcc" -9v
Rc· 0
-10
-15~ ______-L_____ L_ _ _ _ _ _ _ _ _ _ _ _L __ _ _ _
~ ~ ____
~
-.oz -.05 -0.1 -O.Z -0.5 -1.0 -z

COLLECTOR CURRENT (mal
Fig. 7. Reverse gain control characteristics.

40~--'-1---'1-----~1~~-'1----~1----~
------------------!~--------------.
fa
30 - -
u
E ----------------------~ -------........- ..
>-
(.) 20
z - 2N2189
-
IIJ
~ V = -9v
a ee
IIJ
0:
u. 10 - Re =0 -
0
I I I I I
-.05 -0.1 -0.2 -0.5 -1.0 -2
COLLECTOR CURRENT (rna)
Fig. 8. Reverse gain control pass.band characteristics.
Figure 9 is the forward gain control characteristic. This circuit provides 20 db

of forward gain control, but essentially all of the change is in the 8- to 1O-milliamp
region of collector current. The flatness of this curve can be used as a form of
delayed AGe. Figure 10 presents the forward gain control pass-band characteristics.
This curve is limited to 8 milliamps due to the large change in bandwidth and
center frequency at higher currents. This change is caused by the transistor ap-
proaching saturation. Input signal capability is 35 millivolts at maximum gain, 3
millivolts at minimum reverse gain, and only 10 millivolts at minimum forward
16
12
z
~ 8
C)
2N2189
Z
o f - 30 me
i=
0: 4 Vee· -10.5 v
IIJ
III
Z Re'" I K
-4~~--~--~~~~--~--~~--~--~~
o -2 -4 -6 -8 -~
Fig. 9. Forward gain control characteristic.

40r-----,------,------r------,-----,r-----,------,
f2
_ 30
----------------------------------------
c.>
oS
>-
----- ---- " ... ,
~ 20
III
2N2189 "
:::)
a '" ......
Vcc= -10.5 v
III
II:: -- ---,-..!-
f
... 10
Rc == I K --------------
0_~1----~~----~-----_~4------~----~----~~-----~8
COLLECTOR CURRENT
Fig. 10. Forward gain control pass-band characteristics.
gain. Lower signal capability at minimum forward gain is another indication that
the transistor is almost in saturation.
Figure 11 is a 30-mc tetrode amplifier. Collector voltage and current are kept
constant and the gain is changed in accordance with the base-2 current. The
collector-base voltage is + 20 volts and the collector current is 1.3 milliamps. The
gain is 21 db with a typical noise figure of 6 db at the base-2 current of -100
microamps.Tetrode gain control characteristics also show a delay (Fig. 12). Figure
13 gives the pass-band characteristics. The increase in bandwidth is caused by a
decrease in output impedance of the tetrode as the gain is reduced. The input signal
capability of this circuit is 25 millivolts at - 100 microamps of base-2 current and
300 millivolts at + 20 microamps of base-2 current.
13.8pf
!50.n.
50.n. .--"""""M:-----1-----1r--+I-+--
......---- LOAD
SOURCE ...... -- ____ __
O.OOllif -+-----1
To.OOllif
10 K 18ph
lOOK
0-215 K
TYPICAL PERFORMANCE 10 K
Vcc -20v Ic·I.3ma BASE-2BIASADJ. +
GAIN. 21db VEE Vce
N. F. = 6 db

24
:a 16
~
Z
ex
(!)
8
z 3N34
0
i= f= 30 me
a:
UJ
t/) Vee=20V
Z 0
IE =-1.3 ma
-8~~--~--~--~~--~--~--~--~~--~--~
-100 -80 -60 -40 -20 o 20
BASE 2 CURRENT (va)
Fig. 12. Tetrode gain control characteristic.
Figure 14 is a 70-mc neutralized amplifier. At a collector voltage of -6 volts

and a collector current of 2 milliamps, the gain is 27 db with a typical noise figure
of less than 3 db. Rc for reverse gain control is 0 ohms and for forward gain control
is 1000 ohms. Figure 15 shows a reverse control range of 35 db. The slope of this
curve is approximately 20 db of gain for a decade of current change. Figure 16
presents the reverse gain control pass-band characteristics. The bandwidth is in-
creasing at the lower current levels with this circuit. Figure 17 is the forward gain
control characteristic. Forward gain control of 47 db is made available by increasing
the collector current to approximately 7 rna. Again we notice a delay in the char-
acteristic before the gain begins to fall. In Fig. 18 the bandwidth has greater than
4: 1 change as the current is increased to 6 milliamps. The input signal capability
is 40 millivolts at maximum gain, 5 millivolts at minimum reverse gain, and 200
millivolts at minimum forward gain.
38~-----r------~----~------~----~~----~
u 36 3N34 ,',','/
E
Vee= 20 v
>- 34 f2 "
U
Z IE = -1.3 ma "
,""
~ 32 ","
a --------- ----- ----------------
~ 30~-----------------------------
IL
-80 -60 -40 -20 o 20

BASE-2 CURRENT (po)
Fig. 13. Tetrode gain control pass-band characteristics.

13.9pf
-----i--11---~
I SHIELD 10pf
I
l
50·n r~~~--~--~-H 50·n
SOURCE LOAD
S.O-
140 pf
2.7Kn
RC
+
AGC VOLTAGE Vee
TYPICAL PERFORMANCE
VeB=-SV le= -2 ma TI - 5f AIR DUX -51S
GAIN= 27db TAPPED 4t FROM THE
N.F.<3db COLLECTOR
Fig. 14. 2N2415 70-mc neutralized amplifier.
30--------~~----~------~------~------~----~
:a
..., 20
Z
«C) 10
Z
0 2N2415
I- f = 70 me
0::
IU 0
Ul Vee = -6 v
~
R = 0
C
-10
-.02 -.05 -0.1 -0.2 -0.5 -I -2

COLLECTOR CURRENT (mo)
Fig. 15. Reverse gain control characteristic.

I I I
80 ..:---__ -
----------------!~---------
~
~:::>
ILl
o
ILl
a::
LL
70F~~------~~------
60 -
________________
2N2415
fO
NEUTRALIZED
________
-----
fl ---
--------
Vee =- 6 v Re = 0
I I I
Fig. 16. Reverse gain control -0.1 -0.2 -0.5 -I -2
pass-band characteristics. COLLECTOR CURRENT (ma)
30~-----r------~----~------,_----~
20
:;;
"t>
Z 10
«
(!)
2N2415 NEUTRALIZED
z
0 f = 70 me
j:: 0
a:: Vee"" - 8 v
ILl
U)
z Re = I K
-10
-20~----~------~----~------~----~
Fig. 17. Forward gain -2 -3 -4 -5 -6 -7
control characteristic. COLLECTOR CURRENT (ma)
90r-----~------~----~----~
2N2415 NEUTRALIZED
80
o
~ 70
~ ~_____f~o~______~
i5 60 f--
~
LL
----------- - _ , f I
-,
50
........... , ........
'" , ,
40~----~------~----~----~
Fig. 18. Forward gain control -2 -3 -4 -5 -6
pass-band characteristics. COLLECTOR CURRENT (mol
Figure 19 is a 200-mc amplifier. At a collector voltage of - 6 volts and a collector

current of 1.5 milliamps, this circuit has a gain of 17 db with a typical noise
figure of 3 db. Figure 20 presents the reverse gain control characteristic. There is
a 32-db reduction in gain with a change in collector current from 1.5 milliamps
to 20 microamps. This curve also has approximately 20-db change in gain per
decade change of collector current. Figure 21 shows the reverse gain control pass-
band characteristics. There is a 2: 1 increase in bandwidth as the current is reduced,
with a 24-mc change in the center frequency. Figure 22 indicates 24 db of forward
gain control with the collector current increased to 9.5 milliamps. The top portion
of this curve is not as flat as in some of the other amplifiers. Figure 23 is the for-
ward gain control pass-band characteristic. This circuit has a 4: 1 change in band-
width with a 24-mc change in the center frequency as the gain is reduced for for-
ward gain control. The input signal capability is approximately the same as for
the 70-mc amplifier.
Figure 24 is a 450-mc amplifier that has a gain of 8 db with a typical noise figure
of 4 db when biased with a collector voltage of - 6 volts and a collector current of
2 milliamps. Figure 25 is the reverse gain control characteristic. Gain control of
21 db is available by decreasing the collector current to 20 microamps. The gain
change is beginning to level off at 40 microamps of collector current for this ampli-
fier. Figure 26 indicates only small changes in the pass-band characteristics for the
full range of reverse gain control. This curve indicates that the pass-band charac-
teristics for the 2N2415 at 450 mc are very stable with gain control. Figure 27
shows a 26-db range of forward gain control by increasing the collector current to
7 milliamps. Again we notice a delay region in the forward gain control charac-
teristic before the gain begins to fall. Figure 28 indicates less than 1.5: 1 increase
in bandwidth with a collector current of 6.5 milliamps. There is practically no
change in center frequency. The input signal capability is 50 mv at maximum gain,
20 mv at minimum reverse gain, and 500 mv at minimum forward gain. This indi-
cateS that the 2N2415 also performs very well as a forward-gain-controlled ampli-
fier at 450 mc.
ISHIELD
I
I
2N2415 '.. 50ft
50:0. LOAD
SOURCE
TYPICAL PERFORMANCE
Vce --6v Ic--I.Sma
GAIN - 17db
N. F. = 3db +
AGC VOLTAGE Vee
LI-1/4"X 1/32" COPPER STRAP BENT
AS SHOWN ABOVE.
L2- 2 t # 22 SOLDEREZE CLOSE
WOUND ON C.T.C.
PLS62C4L/200 63 NO SLUG.
20
2N2415
:Q
.., 10
f = 200 me
Vee = -6 v
z
ct
(!)
Re == 0
0
z
0
i=
a:
I1J
~ -10
-20~------~------L-----~--------~----~----~
-.02 -.05 -0.1 -0.2 -0.5 -I -2
COLLECTOR CURRENT (ma)
Fig. 20. Revene gain control charaderistic.

275r-------~------~----~~------_T------~----~
--------- ---
U 250
.! ----- ---- _____ f~
-?:z
225r----------------____
f ~---------=~-:-:-=-=-~-~-~:::::
-----
~ 200 0
~ ;;;--------------------------------f--------·
e:
~
175 2N2415 Vee= -6 v Re 0= 0
I
150~------~------~----~--------~------~----~
-.02 -.05 -0.1 -0.2 -0.5 -I -2
Fig. 21. Reverse gain control pass-band characteristics.
16
..,
" 12
~
«
C)
8 2N2415
f = 200 me
~~ " Vee = -6.7 v
ffi 0
en
~ -4
Re = 430 .n
-8~~--~--~~--~--~~--~--~~
Fig. 22. Forward gain o -2 -4 -6 -8 -10
control characteristic. COLLECTOR CURRENT (rna)
280
260
u
! 240
>-
u
Z
220
~
::>
a~ 200
cr
IL. 180
--- -- ____________fl ____ -----
160
Fig. 23. Forward gain control 0 -2 -4 -6 -8 -10
pass-band characteristics. COLLECTOR CURRENT (rna)
: SHIELD 2.2 pf
I
2.5-17 I
SOOpf pf 50.0.
2.5-
50n ~~~~F-~------~ LOAD
17 pf
SOURCE1'T' I "-!I~~
500 pf
IK
+
AGC VOLTAGE VCC
TYPICAL PERFORMANCE
VCB = -6v IC= - 2ma
GAIN = 8 db
N. F. = 4 db
10r---------~------_r------_.----------._------,_------,
~ 0
ct
t!)
Z
o
~ -5 2N2415
I&J
II) f· 450 me
Z
Vcc· -6v
Rc· 0
-10
COLLECTOR CURRENT (mal
Fig. 25. Reverse gain control characteristic.

49o.---------.1-----.-1
--,..--1---.1--1..---------,
------------------!~ ---
470r-- ---------------- -
-!
u
~=_--------------------~fO~--------------______________~~
~ 4501-
a.J
~
a
a.J
...
II::
1--------__ - - - - - - -fl- - -
430r--
----- -
--------
2N2415 VCC~-6v RC=O
1 j I
4!~0=2~-----~.0~5~-----~0~.I~-----~0~.2~-------~0~.5~--~-LI-----~2
1
COLLECTOR CURRENT (ma)
Fig. 26. Reverse gain control pass-band characteristics.
4
:c
~ 0 2N2415
z f = 450
<i -4
(!)
Vcc= -8 V
z -8
Q Rc = I K
l-
II::
a.J -12
(f)
~
-16
-20
Fig. 27. Forward gain -2 -4 -5 -6 -7
control characteristic. COLLECTOR CURRENT (rna,
490~----~----~------~----~------,
470
f2
--------------- --- ---
u
E
~ ~
~ 450r-----------____~_____________
LoJ
:::l
o
LoJ
2N2415 Vee = - 8 v Rc = I K
It:
LL.. 430
------------------~- ---.
410~----~----~~----~----~----~
Fig. 28. Forward gain control -2 -3 -4 -5 -6 -7
pass.band characteristics. COLLECTOR CURRENT (rna)
Figure 29 is the 30-mc amplifier shown in Fig. 6, modified to demonstrate the

hybrid gain control method. Q2 acts as a variable impedance to give emitter degen-
eration, which is a form of external gain control. Q2 also controls the collector cur-
rent of Ql to give reverse gain control action, an internal gain control method.
Figure 30 is the gain control characteristic for this circuit. The gain control range
is 33 db (6 db more than for Fig. 6). There is a sharp change in gain as the col·
lector current is reduced due to the increase in impedance of Q2 as it is brought
out of saturation. Figure 31 presents the pass-band characteristic of the hybrid
circuit. There is a 2: 1 change in bandwidth over the gain control range with most
of the change from 1.0 to 1.5 rna of collector current. The center frequency shift
is less than 1.5 me. This circuit has a typical noise figure of 5.5 db (only 0.5 db
more than that of Fig. 6). The input signal capability is 35 mv at maximum gain,
but it is 11.5 volts at minimum gain. This is possible because of the high emitter
impedance that Q2 provides.
680
pf TI~2500Pf
t N2
50 n
LOAD
15 11 h
6.8K LI a TI SAME AS IN
FIGURE 6
Vec
lOOK Q2
AGC VOLTAGE I>-'vvv-..-H
2NI305
TYPICAL PERFORMANCE
2~00 pf
Vca=-9v Ic=-1.5ma
GAIN· 15 db
N. F. = 5.5 db
Fig. 29. 2N2189 30·mc amplifier (hybrid gain control).

20
:0 10 2N2189
~
f = 30 me
z
« Vee= - 10.5 v
C!l
0
Z
0
i=
a:
ILl
en -10
Z
-20
Fig. 30. Hybrid gain -.01 -0.1 -1.0
control characteristic. COLLECTOR CURRENT (rna)
COMMENTS
Comparisons of the different gain control methods may be made; however, the
gain control characteristics of an amplifier depend not only on the transistor char-
acteristics but are also influenced by the matching networks. Therefore, these com-
ments are generalized only and may vary with individual circuits.
Reverse gain control circuits usually have a fairly predictable gain variation. The
signal-handling capability decreases as the gain is reduced, and the changes in pass-
band characteristics are reasonable. The AGC power required is relatively low.
Forward gain control characteristics vary more widely and depend upon the type
of transistor, frequency, value of collector d-c resistance (Rc), and matching net-
works. Forward gain control will normally handle increasingly larger input signals
as the gain is reduced unless transistor "saturation" is approached. The bandwidth
will increase with reduced gain due to the decrease in transistor impedance with
the increase in collector current. Higher AGC power is necessary to give the high
collector currents for forward gain control.
U 40rrTn.---.--,-r""n----r-.-.-.rn~--_,
E
:>-
--------_________f2.._/_--fa --- ---,\
u
Z 30
w
::;)
-------------------------------_.
o fl
w 2N2189 Vee= -10.5 v
Fig. 31. Hybrid gain a:
~ 20~~~--~~~~~~--~~~~~~--~
control pass-band -.01 -0.1 -1.0
characteristics. COLLECTOR CURRENT (rna)
Tetrode gain control requires the least amount of AGe power, and is able to
accept increasing input signals as the gain is reduced. Receivers, using tetrodes,
have been built that have greater than 100 db of linear gain control with close
tolerances on the gain and phase characteristics.
The hybrid gain control circuit has the advantage of reverse gain control but
also has the ability to handle input signals of much larger amplitudes with little
degradation of available gain or noise figure. This method requires only an addi-
tional transistor, resistor, and capacitor.
BIBLIOGRAPHY
1. Shea, R. F.: Transistor Circuit Engineering, Wiley, N. Y., 1957.
2. Lo, et al: Transistor Electronics, Prentice-Hall, Englewood Cliffs, N. J., 1955.
3. Hunter, L. P.: Handbook of Transistor Electronics, McGr<lw-Hill, N. Y., 1956.
4. Terman, F. E.: Radio Engineer's Handbook, McGraw-Hill, N. Y., 1943.
5. Langford-Smith, F.: Radiotron Designer's Handbook, 4th ed., RCA Manu-
facturing Co., N. Y., 1954.
6. Texas Instruments Inc., Transistor Circuit Design, McGraw-Hill, N. Y., 1963.
7. Shirman, J.: "Designing a Stable Transistor AGC Amplifier," Electronic
Design, May 11, 1960.
8. Weldon, L. A.: "Designing AGe for Transistorized Receivers," Electronic
Design, Sept. 13 and Oct. 11, 1962.
9. Franke, Eugene: "AGC Design for Wide-Range Inputs," Electronic Design,
Nov. 8, 1962.
10. Chow, W. F., and A. P. Stern: "Automatic Gain Control of Transistor Ampli-
fiers," Proceedings of the IRE, Sept. 1955, pp. 1119-1127.
3
RF Harmonic Oscillators
by George Johnson
This chapter discusses some of the fundamentals of RF harmonic oscillator

design. The characteristic equation for the various oscillator configurations is used
to develop expressions for the natural frequency of oscillation and the necessary
conditions for buildup of oscillation. Causes of frequency instability and methods
of improving stability are discussed. The effects of changing load, changing passive
parameters, and changing active parameters are analyzed. A brief treatment of
crystal oscillators is presented along with a discussion of the crystal itself. Finally,
a design procedure is proposed, and circuit examples are presented.
The general treatment of oscillators in this chapter is on a linear basis. However,
the conditions of self-sustained oscillation must necessarily be nonlinear. Because
of this linear analysis restriction, certain interesting topics such as limiting output
voltage. and current amplitude will be treated on a very approximate basis. To
analyze these aspects more accurately would require limit-case solutions of the
nonlinear differential equation describing the oscillator current or voltage in the
phase plane, which are beyond the scope of this treatment.
OSCILLATOR CONFIGURATIONS
Necessary Conditions for Oscillation. The first necessary condition for self-
sustained oscillation in a circuit is that the active device permit power gain at the
frequency of oscillation. Furthermore, the device must have sufficient gain to
overcome circuit losses and establish exactly unity gain around the feedback loop.
The second necessary condition is that the phase shifts introduced by the active
device and the feedback network result in exactly zero phase shift around the
overall circuit.
These conditions will permit sustained oscillations, but they do not guarantee
that oscillations will occur. In other words, it is not enough that unity loop gain
can exist. There must be more than unity loop gain at first to cause buildup of
oscillations. These, then, are the necessary and sufficient conditions for the buildup
and maintenance of self-sustained oscillation in a circuit.
37
VI
- Amplifier
- V2
Vi
-
Ii
Feedback
network
-12
Vi
Fig. 1. Feedback oscillator configuration.
Basic Configurations. Most oscillator circuits can be regarded as having two

basic components: the amplifier and the frequency-selective feedback circuit. This
arrangement is known as a feedback oscillator, and is shown in Fig. 1. The fre·
quency·selective circuit can be further reduced to the network arrangement shown
in Fig. 2. This configuration allows a clear visualization of each of the basic oscil-
lator types. If K2 and KI are capacitors and K3 is an inductor, the circuit is a Col-
pitts type. Figure 3 shows this configuration. If Kl and K2 are inductors and K3 is
a capacitor, the configuration is called a Hartley oscillator and is shown in Fig. 4.
Figure 5 shows the Hartley configuration realized with a two-winding transformer.
The choice between a two-winding transformer and a tapped coil depends partly
on the frequency of operation, since the expressions for the natural frequency of
oscillation are slightly different. Also, the tapped coil requires an extra d-c isolation
capacitor, which is not necessary with the two-winding transformer. Because of the
possibility of obtaining phase reversal with the two-winding transformer, the tran-
sistor can be changed from common base to common emitter.
. fig. 2. 7T-type feedback oscillator.

Fig. 3. The Colpitts type circuit.
Fig. 4. The tapped Hartley circuit.
Fig. 5. Two-winding Hartley oscillator.

A modification to the Colpitts circuit results in the Clapp oscillator. In this
circuit, the resonant frequency is determined primarily by the series combination
of Land C. Figure 6 shows the arrangement. Where there is a requirement for
high stability, crystals may be used for the frequency-determining element. A con-
figuration using a crystal is shown in Fig. 7.
Some of the many possible modifications to the above basic configurations are
shown in the circuit performance section. These arrangements of the active device
and passive structure have been made so that it will be easy to combine the two-
terminal pair parameters of each black box into one equation characterizing the
composite network. The set of equations characterizing the active device in h
parameters is shown in Eqs. (1) and (2).
Fig. 6. The Clapp oscillator.
Fig. 7. Crystal oscillator.

VI = hibh + hrbV2 (1)
12 = hfbll + hobV2 (2)
Equations (3) and (4) characterize the passive structure.
VI' = h11II' + h12V2' (3)
12' = h211t' + h22V2' (4)
The combination of these black boxes results in a set of equations which completely
characterize the composite network. For the networks of the type shown in Fig.
2, the combination must be accomplished as indicated in Eqs. (5) and (6).*
VI" = (hib+ hl1)It" + (hrb-hI2)V2" (5)
12" = (hf!,-h 2 dll" + (hob + h22 )V2" (6)
Oscillator connections are special cases, however, since V t" = 0
and h" = O. These
restrictions create the set of simultaneous homogeneous linear equations shown in
Eqs. (7) and (8).
0= (hih + h11 )It" + (hrb-h12 )V2" (7)
0= (hfh-h2dlt" + (hob + h22 )V2" (8)
This set is, by definition, the characteristic equation of the combined network; and
its solution for the imaginary part will yield the natural frequency of the system.
This may be done by inserting actual circuit values into Eq. (9) and solving for the
imaginary part equated to zero.
(9)
Evaluation of the real part of the expression is done in a similar way to yield
the unity gain and, hence, starting conditions. Table 1 lists the natural frequencies
and starting conditions for various configurations.
TANK CIRCUIT
Considerations for the Tank Circuit. Tuned LC circuits can be made to
store energy. Used for this purpose, they have acquired the nickname of "tank"
circuits. The frequency-determining LC circuit of an oscillator is such an example.
The three essential parameters of the oscillator tank circuit are natural frequency of
oscillation, selectivity, and characteristic impedance. The tank performs the fol-
lowing functions:
1. It determines the frequency of oscillation.
2. It is the feedback network.
3. It determines the stability of the oscillator.
4. It is a part of the coupling network to the load.
5. It affects the noise energy output of the oscillator.
6. It is a principal factor determining the circuit efficiency.
For a well-designed oscillator, the reactive components surrounding the tank
are negligible in their effect on the resonant frequency set by the Land C of the
tank.
*See Ref. 3, p. 553, for further discussion.
It is easily seen in Figs. 1 to 3 that the tank can be treated as a feedback network
connected across the active device. Even in the Clapp connection of Fig. 6 this is
still true, but now the feedback is primarily determined by divider action of Cl
and C2, and the frequency is determined by Land C in series.
Frequency stability is primarily determined by the QL of the tank. The reason
for this is that the frequency deviation required to develop a given phase correction
to establish exactly 360° phase shift around the feedback loop is inversely propor-
tional to the loaded Q. Frequency stability is usually the most difficult specification
to meet, and meeting it will usually more than satisfy the other requirements of
constant Q and constant characteristic impedance. In other words, the environ-
ment of the tank tends to change not only for fo, but also Q and Zo:· By satisfying
the requirement for stability of fo, one usually satisfies the requirements of stability
of Q and Zo also.
The load on a transistor oscillator is usually magnetically or capacitively coupled
into the tank circuit. The load determines both the power drawn from the oscillator
and the loaded Q of the tank circuit. The ratio of loaded Q to unloaded Q for the
tank circuit should be low for good circuit efficiency.
Components of the Tank. Capacitors. One of the most desirable types of
capacitors for use in RF oscillators is the silvered-mica type. Since the silver plates
are applied on the mica by vacuum evaporation, the silvered-mica capacitor is
much more stable than ordinary mica capacitors with plates of foil pressed against
the mica insulation. Mica has high seculart stability, a low temperature coefficient
of capacity, and a low power factor. Typical values are + 20 ppm/DC temperature
coefficient and 0.015% power factor at 1 mc, over a range of _60°C to + SO°e.
Dielectric constants of 6 are typical. Very low parasitic inductance and d-c leakage
(the leakage is principally over the surface of the plastic jacket) are features of the
silvered-mica capacitor.
Ceramic capacitors offer two interesting advantages. Ceramic has, when mixed
with titanium, negative temperature coefficients as high as 750 ppmfDC and about
10 times greater dielectric constant than mica. These advantages lead to the
following possibilities: First, owing to the negative temperature coefficient, some
compensation can be made for the positive coefficient of most inductance coils.
Second, since such high dielectrics are available, it is possible to obtain large
capacitance in small noninductive structures. Secular stability is very good, and
power factors range from 0.02 to 0.05 % at 1 mc to 0.04 to 0.1 % at 100 mc. The
temperature coefficient with frequency is about constant between 1 and 100 me.
Inductance. Normally, the capacitors used in Le tank circuits of RF oscillators
have very low losses compared to the losses in the coil. For this reason, the un-
loaded Q of a resonator depends almost entirely on the Q of the coil. The exact
design of a coil is quite complicated because of the many factors which must be
considered. The coil must have the correct inductance and be stable with time
and temperature. It must have low parasitic capacitance and a high, reasonably
stable unloaded Q.
The form of inductance coil most frequently used in RF circuitry is the single-
layer solenoid, although powdered iron cores are sometimes used for better Q or
for a variable inductance. The inductance is determined by the number of turns
·Zo is the antiresonant tank resistance.
t Secular stability is the property of a material which enables it to retrace its path
when one of its parameters is cycled with respect to temperature.
and the geometry of the coil. The self-inductance and the resistivity will vary with
the frequency because of proximity and skin effects. Since the resistivity of a con-
ductor varies rapidly with temperature changes, the inductance of a coil may be
very sensitive to temperature changes, even though no appreciable change occurs
in its dimensions. The problem, therefore, is to design the coil so that its dimen-
sions are independent of time, temperature, and atmospheric conditions. The
current distribution through the wire cross section must also be independent of
temperature over the range specified.
If severe vibration is not expected, a coil may be self-supported at one end and
connected at the other end by flexible braid. This results in reasonably stable coils
having low losses. If both ends are rigidly attached, temperature-expansion coeffi-
cients may become a problem.
As stated before, the self-indu.ctance of a coil is a function of skin effect. Skin
effect is, in turn, a function of conductivity. At high frequencies the penetration
of current into the conductor is very shallow, while at low frequencies it may cover
the entire cross section. The inductance is a function of both frequency and
resistivity. Since this resistivity increases rapidly with temperature, the inductance
also increases. The temperature coefficient of copper is about 4,000 ppm;oC, and
the inductance coefficient due to this effect alone may be as high as 100 ppm;oC.
At higher frequencies, where small inductance values are needed, sheet-copper strap
is used to form the coil. This provides a large surface area and reduces skin effect
for a given inductance.
Because it is expensive as well as difficult to build coils with low positive tem-
perature coefficients of inductance, negative-temperature-coefficient capacitors are
often used for compensation. This method is sometimes impractical, however,
since the elements must track each other and must be reproducible in large-scale
production.
Typically, a poorly built LC resonator may be affected by temperature so that its
self-resonant frequency drifts by about 40 ppm;oC. The drift of a GT cut crystal
will usually be 1/10,000 as great.
Crystal Discussion. When extreme frequency stability is required of an oscil-
lator, a crystal is usually used as a substitute for the tank circuit or in the feedback
loop to stabilize the frequency. The tolerance on most commercial crystals is about
0.002% from - 55 to + 90°C. An example of a Colpitts-Pierce crystal-oscillator
configuration is shown in Fig. 7. Here the crystal is operated at a frequency
just slightly below its parallel resonant frequency so that it will appear as an
inductance.
The equivalent circuit for a crystal is shown in Fig. 8.
Fig. 8. Equiva.lent circuit of
a quartz crystal. o
The L is analogous to the mass of the crystal structure, C is analogous to the crys-
tal elasticity, and R is analogous to mechanical friction, accounting for energy lost
as heat in the crystal. Co is the total effective shunt capacitance contributed by the
distributed capacitance of the leads and terminals of the mounting structure, the
nonvibrating electrostatic capacitance across the quartz-crystal faces with the
quartz serving as the dielectric, and any capacitance added by the crystal holder.
Crystals may also be operated at certain overtones of the fundamental, but even
though the overtone Q is approximately the same as the fundamental Q, the activity
or piezoelectric effect will be progressively smaller, the higher the overtone. Also,
since in the parallel mode the activity is inversely proportional to the square of
the terminal capacitance, care should be taken to minimize external capacitance
so as tQ preserve crystal activity.
In RF circuits, the dissipation must often be held to a few milliwatts. Tem-
perature coefficients are normally specified in the form of Eq. (10):
. M/fo
Dnft = AT (10)
In other words, the specification is in parts per million per degree or in per cent
per degree. This coefficient can be positive, negative, or zero over small tempera-
ture ranges, depending on the crystal cut. Crystal-oscillator design will not be
elaborated here, in view of the wide range of crystal types and possible circuits.
ACTIVE DEVICE
Requirements. The primary function of the active device is to develop enough
output power at the frequency of operation to supply the required load power, the
tank losses, and the drive power for itself. It should also generate as little noise
voltage as possible. The active device should have a maximum frequency of oscil-
lation well above the design frequency. Because these requirements are rather
loose, many transistor types will function properly as oscillators. However, cer-
tain types of manufacturing processes result in device parameters which yield bet-
ter oscillator performance. Paramount among these is the epitaxial mesa technique
which allows a relatively lower value of effective collector bulk resistance, permit-
ting higher operating efficiency.
Parameter Variation. At low frequencies the transistor parameters in the
characteristic equation do not have large imaginary components, but at RF fre-
quencies these parameters must be inserted in the characteristic equation in com-
plex form. Solution of the real and imaginary parts, therefore, will include the
effects of input, output, and transfer immittances. The sensitivity of-frequency
and starting conditions to changes in any of these immittances with the tempera-
ture, age, or bias point can be evaluated. Examination of Table 1 and the design
example shows the form of these equations and the specific parameters involved.
FREQUENCY STABILITY
Causes of Frequency Instability. Oscillator frequency stability is a measure
of the amount of drift in frequency away from the design center value. There are
rwo causes of drift. First, the active parameters may change. The equations for
w 2 in Table 1 indicate the particular active parameters involved. Inserting actual
Table J.
Circuit Natural frequency «(1.12) Starting condition
Colpitts 1 r 1
=-+---+--+--
ahe* hoe r(C1 + C2)hie C2 C1 Ah ~ C2
LC L C1hie C1hie C1C2hie hfe > L + C1 + C2 ~ e = C1
=- LChoe)
1 ( 1+ --
- LC C1C2hie
C1C2
where C = C1 + C2
and r = a-c series resistance of coil L
Colpitts __________________________ _ 1 hob 1 -C2
=-+--=-
LC hibC1C2 - IC hfb > C1 + C2
ah e *
rLChie + (M + Lt}2 + (L1r2 + L2r1) -h'
Hartley (tapped) ___________ _ hie .e
- C(Lhie) + (L1r2 + L2r1)hfe + (L1L2-W)hoe hfe> (L1 + M) (L2 + M)
1 L1 + M 1 +KN n
o
::::: L2 + M ~ 1M + KN :I
::::: LC + (L1L2-M2) hoe :I
hie M c
where J{ = ---== ~
where L = L1 + L2 + 2M ;;.
V L1L2 a
r1 = a-c series resistance of coil L1 :::r.
o
r2 = a-c series resistance of coil L2 IG :::I
C/O
N=VL1
:E:
Hartley (tapped) _____ .____ _ 1 1 L1 + M N1 a
:::I
= LC + (hob/hib) (L2L1-W) ::::: LC hfb > L1 + L2 + 2M ::::: - N2 a-
Ir
o
where L = L1 + L2 + 2M where N 1 = number of turns of L1 o
~
N2 = number of turns of 12
Clapp ______________________________ _ 1 1 C1 + C2 C2 C2
~ LC + L C1C2 bfb > - C1 + ~ hfe > C1 ~
where C = series capacity with L
,., ahe = common-emitter determinant = hiehoe - hrehfe.
values gives an indication of their influence. Second, the passive parameters may
change. Both active and passive parameters generally change for two reasons:
temperature and age.
Specification of Frequen.cy Stability. An explicit expression for frequency
variation with temperature is given in Eq. (11).
. L1f/fo
Dnft = L1T/To (11)
This expression gives the sensitivity of center frequency, fo, to temperature change
at a particular center frequency and operating temperature. Another expression
that can be used is given in Eq. (12),
Mlfo
Drift-
- - -
L1T (12)
usually expressed as parts per million per centigrade degree.
Techniques for Improving Frequency Stability. As mentioned earlier, mini-

mization of active device influence will improve stability. For the Colpitts con-
nection, this is satisfied by the following inequality:
hob C1 + C2
(13)
hibCIC2 < LCIC2
Similar inequalities for other oscillator connections may be found from Table l.
Selection of an active device which satisfies this inequality is therefore the first
technique.
The second technique is to swamp out part of the particular active parameter
which enters the frequency expression by putting appropriately sized resistances
in series with hib and in parallel with hob. The characteristic equation below shows
the effect of this approach.
Now if hib < Rl and hob < l/R2, the equation becomes
The resonant frequency is solved for in the same way, except that now Rl and G2
are the terms in the expression instead of hob and hib.
The effect of load change on frequency may be shown by inserting Y L into the
characteristic equation. This is shown in Eq. (16).
If YL < (hob + h22p), its change will be minimized in the expression for fre-
quency. This condition is generally established by a buffer stage. On the other
hand, the solution of Eq. (16) for YL will yield the maximum load conductance
which will still satisfy the conditions for oscillation. This load is important if the
oscillator is intended as a power source rather than as a frequency source.
OSCILLATOR DESIGN PROCEDURE
Discussion. The design procedure for transistor oscillators is usually treated on

a linear basis even though self-sustained oscillation indicates nonlinear operation.
Therefore, the preliminary design calculations provide only approximate values for
components, and these components must be adjusted experimentally in the final
design.
Since a design procedure must be tailored to the individual oscillator specifica-
tion no exact procedure can be given other than the general steps involved. The
following is a listing of these design steps:
Design Steps
1. Select a transistor capable of providing sufficient gain and desired power
output at the operating frequency, based on data sheet specifications.
2. Select the oscillator configuration to be used, based on the application.
For example, the oscillator will probably be used either as a frequency-
determining element or as a source of power at a given frequency.
3. Design the d-c bias network to establish the bias point and provide the
necessary stability.
4. Design the tank or frequency-determining network using the formulas for
operating frequency and starting conditions given in "Oscillator Config-
urations" and in Table 1. The table gives natural frequency (w 2 ) and
starting conditions in terms of h parameters.
5. Make necessary adjustments in the feedback and bias networks to optimize
efficiency. Be sure not to sacrifice ease of starting when adjusting the bias
network for possible class B or C operation.
6. Use a trimming capacitor to make final adjustments, if necessary, to oscil-
lator frequency.
DESIGN EXAMPL~
Specifications for the low-power oscillator design example are as follows:
fo = 90 me
Vo = 2V(rms) across a 1,000-ohm load
Vee = 10 volts
The design procedure is as follows:
1. Select the 2N743 to provide this specified output power and voltage. It
has an f t which is, at the normal bias point of 5 volts and 5 rna, about
three times f o.
2. The Colpitts connection is selected for this frequency range because it
yields values of tank inductance and capacitance which should be fairly
insensitive to transistor parameter variation. The circuit configuration is
shown in Fig. 9.
3. The d-c values for the network are as follows:
Let the drop across R3 be 2.5 volts.
2.5 volts
R3 = 5
rna
= 500 ohms
Let the current through Rl and R2 be 5 rna, so that the value of R2 will be
3.1 volts
R2 = 5 rna = 620 ohms
This leaves VRI = 10 - 3.1 = 6.9 volts; if IB is about 0.4 rna,
6.9 volts .
Rl = 54. rna = 1.3 kllohms
R4 will have about 2.5 volts across it; therefore,
2.5 volts
R4 = 45
. rna = 550 ohms
4. The a-c circuit design is carried out as follows: Since R2 is 620 ohms, ade-
quate bypass is about 5 ohms. This gives Cl = 300 pf; to avoid a self-
resonant frequency at or around 90 mc, Cl must have a total lead length
less than 0.4 rna. C4 and Co are 500-pf feed-through capacitors.
At 5 volts, 5 rna, and about 90 mc, the hb parameters for the 2N743 are:
hib = 21.3 L 45.6° = (15.2 + j15) ohms (17)
hrb = 0.069 L 7r = 0.0672 + jO.0154 (18)
hfb = 0.97 L 182.3 ° = - 0.969 - jO.039 (19)
hob = 2.76 X 10.3 L 15.3° = (2.66 + jO.73) X 10-3 mho (20)
The expression for w2 is

w2 = I hib + hob ) Cl + C2 l..
\ L Cl + C2 CIC2 hib
1 Cl + C2 hob
=-L CIC2
+ hib(CIC2)
1 1
= +----,-,----,----- (21)
LCIC2ICl + C2 hilJr/hobr (ClC2)
By experimentally adjusting the capacitance ratio of the tank, we found that the
following ratio gave the desired signal across the I-kilohm load:
C2 43 C2C3 = (43) (91) = 29 f
Ca ="91 = 0.47 C2 + C3 134 P
The inductance is 0.11 fth (:::::.: 2 turns no. 18 wire on Y2 in. diameter.) Vo = 2
volts across the I-kilohm load.
In order to determine the effect of the transistor parameters on the frequency of
oscillation, we will compare the values obtained from the following expressions.
Frequency determined by considering only the tank:
1
w2 - =-=-=-=--:-:-:::--.,...-,::--
- L[C1C2/(C1 + C2)]
2- 1
Wo - (0.11 X 10-6) (29 X 10-12 )
1 1
fo = (6.28) (3.2 X 10-18 ) 1/2 = (6.28) ( 1.79) 10-9 = 90 mc
Using hibr and hobr equal to 15.2 ohms and 2.66 X 10-3 mho, respectively,
1 1
w02 = L[C1C2I(C1 + C2)] + (hibr/hobr) (C1C2)
r 1
= (0.11 X 10-6) (29 X 10-12 ) + (15.2/2.66) 3.94 X 10-18
= 0.313 X 1018 + 0.044 X 1018
W02 = 0.359 X 1018 fo = 95.4 mc
Evaluation of the operating frequency, using the full set of complex values for the
h parameters, indicates that the frequency is still almost completely determined by
the tank components. Experimental measurements of frequency agreed very well
with the predicted value. Figure 9 shows the circuit.
ADDITIONAL CIRCUITS AND PERFORMANCE

23-mc Oscillator. The 23-mc push-pull oscillator of Fig. 10 was designed to
deliver 75 mw to a 50-ohm load. A 1T-matching network is used to optimize the
output to a 50-ohm load with a noncritical design for the output transformer.
Transistor type used is the Dalmesa 2N2188.
Cl
~------~------~~---oVcc=10v
Fig. 9. 95-mc oscillator. Circuit uses a silicon epitaxial mesa to deliver about 2 volts
(rms) across a l-kilohm load at 95 me. Typical circuit efficiency:::::: 3%.
24-mc Oscillator. Figure 11 shows a 24-mc Clapp oscillator designed to de-
liver 300 mw into a 50-ohm load. Typical collector efficiency is 35%. The tran-
sistor type used is the 2N696.
3D-mc Oscillator. Figure 12 shows a 30-mc oscillator designed to operate
over a temperature range of - 40 to + 60°C. Typical power out is 23 mw at
-40°C and 20 mw at + 60°C Typical collector efficiency is 30%. Transistor
type used is the Dalmesa 2N2188.
60-mc Oscillator. The common-base circuit in Fig. 13 is a 60-mc oscillator
designed to deliver approximately 10 mw to a 50-ohm load at 25°C. Collector
efficiency is typically 8 to 10%. Transistor type used is the Dalmesa 2N2188.
BIBLIOGRAPHY
1. Linvill, J. C, and J. F. Gibbons: "Transistors and Active Circuits," McGraw-
Hill Book Company, Inc., New York, 1961.
2. Cote, A. ]., Jr., and J. B. Oakes: "Linear Vacuum Tube and Transistor Circuits,"
McGraw-Hill Book Company, Inc., New York, 1961.
3. Gartner, W. W.: "Transistors: Principles, Design, and Applications," D. Van
Nostrand Company, Inc., Princeton, N. J., 1960.
4. Reich, H.].: "Functional Circuits and Oscillators," D. Van Nostrand Company,
Inc., Princeton, N. J., 1961.
5. Pullen, K. A.: "Handbook of Transistor Circuit Design," Prentice-Hall, Inc.,
Englewood Cliffs, N. J., 1961.
100·500 pf
SOD
3.6K load
O.OOll-'f
-10v
170·780
pf
Tj
3.6K Air Dux·508
N 1 ·3 turns
N2-1 turn
N a·1 turn
N 4·3 turns
N 5 ·5 turns
Coefficient of
coupling e! 0.5
Fig. 10. 23-mc push-pull oscillator.

50n
,,-4~-r,~~----~------~----~~----~)load
220pf
500pf
+ 12v
Fig. 11. 24-mc oscillator.
I
I Shield
I
~r---------~--1-----~----~~----~4)
-lOv
500pf
4.7 ph
Tl 2.7-30 pf
11 turns Air Dux-516 -lOv
N 1·4 turns
N 2 -7 turns
-lOv
820pf
Tl
8 turns Air Dux-432
N l -4 turns
N 2 -4 turns

6. Edson, W. A.: "Vacuum Tube Oscillators," John Wiley & Sons, Inc., New
York, 1953.
7. Guillemin, E. A.: "Communication Networks," 2 vols., John Wiley & Sons,
Inc., New York, 1931, 1935.
8. Buchanan, J. P.: Handbook of Piezoelectric Crystals for Radio Equipment
Designers, WADe Tech. Rep. 56-156, ASTIA Document AD 110448, Oc-
tober, 1956.
A bank of diffusion furnaces, one of several such installations that give TI

unparalleled diffusion capacity.
4
Transistors in Wide-band
Low-distortion Amplifiers
by Roger Webster
INTRODUCTION
Line amplifiers used for repeaters or multicouplers are characterized by:
1. Wide bandwidths
2. Very low distortion and intermodulation products
3. Modest output power level
4. Modest power gain
5. Wide dynamic range
The frequency spectrum of the amplifiers to be discussed extends from a few
hundred Kc to 30 Mc or higher. Intermodulation products should be down 60 db
or more at maximum signal levels. The output power level is in the order of 10
to 50 mw and the gain is in. the order of 10 to 15 db.
The dynamic range is a function of the difference between system noise and the
maximum signal handling capability. For a given maximum signal level, dynamic
range will be maximum for a system with lowest noise figure.
GENERAL CONSIDERATIONS
Type of Transistor. Linear operation over a wide range of frequencies is a

prime consideration. Operating the transistor at fairly high currents and voltages
serves to restrict current and voltage swings to a small percentage of the operating
point, and generally enhances linearity. For these and other reasons to be discussed
later, the desirable transistor characteristics may be summarized as follows:
1. Fairly substanti~l dissipation capability
2. Fairly high current and. voltage rating
3. High cutoff frequency relative to operating frequency
4. Fairly low capacitance
5. The following parameters should be as independent of operating point (i.e.,
current and voltage) as possible:
53
a. current gain
b. base resistance
c. cutoff frequency
d. capacitance
e. emitter and collector body (parasitic) resistance.
6. Low collector-base leakage current
7. High d-c current gain
8. Low base resistance
Although either silicon or germanium might be used, requirements 1 and 2 can
more easily be met with silicon in a small-area, low-capacitance device. Low capaci-
tance is important because of the requirement that the device operate at reasonably
high frequencies. Characteristics 6, 7, and 8 are included because transistor appli-
cations require low-noise devices.
Configuration. The common-base connection is clearly superior for greatest
linearity and smallest gain variation with frequency. A comparison of the common-
emitter and common-base transfer characteristics will demonstrate the inherent
advantage of common-base operation. Figure 1 shows such a comparison.
Fortunately, gain requirements are usually modest and, thus, common-base oper-
ation is satisfactory. A further advantage of common-base operation is that gain
is primarily determined by an impedance transformation ratio, which is deter-
mined by the external circuit rather than the device. A still further advantage is
that the output impedance of the common-base stage is both much higher and
more independent of operating point than is the common-emitter output
impedance.
DISTORTION ANALYSIS
Generation of Harmonics and Intermodulation Products.
Harmonics, cross modulation and intermodulation products are produced by
non-linearity in the input-output characteristics. The three principle effects ordi-
narily mnsidered are: 1
First order: Output is strictly proportional to input. No intermodulation or
cross modulation products exists.
Ic
?
/'
r
'/
I Vce
Fig. 1. Common-base and common-emitter characteristics.
Second order: Output is proportional to the square of the input signal, and to
curvature of the transfer characteristics. It generates a doc com-
ponent, second harmonics, and sum and difference frequencies if
two input signals are present.
Third order: Output is proportional to the cube of the input signal, and to
rate of change of curvature of the transfer characteristics. It gen-
erates third harmonics and odd-order combination frequencies if
two input signals are present (e.g., 2wa ±Wb or 2Wb ± wa).
Since there is a fundamental component proportional to the cube of the input
signal, the total output at the fundamental is not proportional to the input. More-
over, when two signals are present, the amplitude of the first is dependent upon
the a~plitude of the second, giving rise to cross-modulation.
Higher-order components cause similar effects. Even orders generate even har-
monics, doc components, and even-order combination frequencies, while odd orders
generate odd harmonics, odd-order combination frequencies, lack of proportionality
between input and output, and cross-modulation.
As a practical matter, second-order and all higher even-order effects may be
substantially reduced by a balanced push-pull circuit. Thus the third-order effect
is ordinarily the dominant effect in the class of amplifiers described here.
Sources of Distortion in Transistors.

1. Nonlinear input characteristics:
a. Emitter-base diode characteristics:
The emitter-base diode has the usual semiconductor diode exponential
current-voltage relationship. Ideally, this relationship is:
(1)
A series expansion of this relationship shows that all harmonics are present
in the current flow for a sinusoidal applied voltage. The relative magnitude
of the harmonics is proportional to the applied voltage. When two sinusoidal
voltages are applied, intermodulation and cross modulation products are
also generated.
qV
kT
When e > > 1, the rate of change of current in the ideal diode is:
dI q
- = --dv (2)
I kT
Thus, in the ideal diode, the curvature of the diode characteristic for a given
change in voltage is independent of the current. As a result, the relative
magnitudes of the distortion components are functions only of the applied
signal voltages, and are independent of the operating current.
In any practical structure, the foregoing statements must be modified con-
siderably. This will be discussed further in a following section on the
influence of the operating point.
b. Non-constant base resistance:
Any variation in base resistance will cause a corresponding variation in
the input impedance. Variations in base resistance result primarily from (1)
modulation of resistivity by heavy injection of minority carriers, and (2)
base-width modulation. There are at least two different causes of base-width
modulation. A variation in base width results because the collector-base
junction depletion layer width is dependent on applied voltage. As voltage
changes, the location of the edges of the junction depletion layer moves. This
is known as the "Early" effect2 and is shown in Fig. 2. Base-width modula-
tion is also caused by the inability of the collector depletion region or the
collector body, or both, to support more than some finite current density
without radical changes in internal parameters. The depletion layer contracts
and tends to move into the collector body, thus in effect widening the base.3
2. Non-constant transfer characteristics:
Not all of the emitter current is injected into the base, nor does all of the
injected current reach the collector, nor is the collector current all injected
current. This may be expressed as follows:
ex = ex°{3y (3)
where ex = emitter-collector current gain
exO = collector multiplication factor
{3 = base transport efficiency
y = emitter injection efficiency
The fact that none of these factors is unity is not a problem in itself. How-
ever, these factors are not constant and depend on terminal currents and volt-
ages. This results in non-constant transfer characteristics and nonlinear dis-
tortion. Some of the factors influencing each of these will be discussed in the
following paragraphs.
Variation of emitter injection efficiency results from a variation in the total
number of base impurities as seen by the emitter. This is caused by base-width
I I
I
I
I I
I I
E B I c
I I
I I
I I
I
! I
J t ~I DE PLETION LAYER
W, (LOW VOLTAGE)
~ l.2W2 (HIGH VOLTAGE)
Fig. 2. Early effect - base width modulation.

modulation and base-conductivity modulation. Both of these were discussed in
the previous section.
The variation of base transport efficiency also results in a corresponding
change in current gain and, thus, a nonlinear transfer characteristic. This varia-
tion is primarily caused by base-width modulation. Since high-frequency cur-
rent gain (common emitter) is inversely proportional2 to base width, current
gain may vary considerably. In common base, this may be manifested largely
as a phase-angle modulation.
Collector multiplication may result from a number of factors. The most sig-
nificant of these in modern transistors is collector junction avalanche multi-
plication. Collector avalanche multiplication occurs in the collector-base junc-
tion; thus it is out of the input-signal path. The multiplication factor is voltage
dependent. For these two reasons, avalanche multiplication generates unwanted
distortion components.
3. Non-constant output characteristics:
It may be shown analytically and experimentally that many of the previous
variations will also influence the output iml'edance. This, in turn, introduces
distortion components into the signal.
Influence of the Operating Point.
1. Reduction of distortion components:
Earlier, in discussing nonlinear input characteristics, it was shown that in
the ideal diode the relative magnitudes of the distortion components are inde-
pendent of the operating point. This is not true of practical structures because
series impedances in the structure (notably base resistance) considerably mod-
ify the terminal characteristics. Consider the simple equivalent transistor input
circuit shown in Fig. 3.4
qV
1= Io(exP kT - I )
q
WHEN V» kT
~=~ dV
I kT
Fig. 3. Simple transistor input equivalent circuit.

In Fig. 3, es is an applied signal voltage, rs is an equivalent series resistance,
rd is the emitter diode impedance, and ed is the signal voltage appearing across
the diode.
At large emitter currents, rd < < rs, and in the simple voltage divider cir-
cuit shown:
1
ed 0: (4)
Ie
Therefore, operation at high emitter current reduces distortion by virtue of the
fact that the applied signal voltage across the diode proper is reduced. Two
factors oppose increasing operating current indefinitely. Shot noise generated
in the emitter-base and collector-base diodes is directly proportional to current,
so that noise figure is degraded by increasing the operating current. Moreover,
nonlinearities eventually appear in the transfer characteristics as current is
increased. This leads to increased distortion components.
2. Cancellation or reduction of certain distortion products:
D. R. Fewer was the first to show that the second-order distortion products
may be reduced substantially by proper selection of source impedance and
emitter current,5 However, the exact point at which this occurs is dependent
on the individual transistor. Moreover, the third-order components do not show
such a minimum, but in general tend to decrease as emitter current is increased.
It therefore appears more practical to use balanced push-pull pairs to cancel
second-order products, and to operate the transistors in a region of low third-
order distortion.
CIRCUIT ARRANGEMENTS FOR DISTORTION REDUCTION

Boxall described a method for distortion reduction in which the base current
of a common-base output stage is fed back into the input.6 The base current is an
exact measure of how far the collector current departs from the input current. If
the input current represents exactly what is to be reproduced, then reinserting the
base current at the input will give an output current which is an exact reproduction
of the input current. Figure 4 shows how the reinsertion may be accomplished.
The d-c circuitry is omitted for clarity,
lOUT
Q2
Fig. 4. Base current feedback.

If the current gain of Q2 is close to unity, the desired effects are accomplished.
The results of such a feedback arrangement are to:
1. make th~ effective overall current gain close to unity. If aT is the overall
current gain, then:
al
aT = ---,------ (5)
l - a 2(1-at)
2. raise the effective output impedance:
1 - a2 (l - al) :::::: Zl (6)
l-a2
where Zl is the open-circuit output impedance of Ql without feedback.
3. lower the distortion current flowing in the output:
(7)
where Dl is the per-unit distortion current flowing in the output without

feedback.
Aldridge has shown a variation of this arrangement which he calls a "cascade"
circuit. 7 Distortion reduction of 15 db of third-harmonic components at high fre-
quencies is realized.
BIBLIOGRAPHY
1. Terman, F. E.: "Radio Engineers Handbook," McGraw-Hill Book Company,

pp. 462-466, First Edition.
2. Early, J. M.: Effects of Space Charge Layer Widening in Junction Transistors,
Proc. IRE, p. 1401, November, 1952.
3. Kirk, C. T., Jr.: A Theory of Transistor Cutoff Frequency (fT) Fall Off at High
Current Densities, IRE Trans. on Electron Devices, vol. ED-9, no. 2, p. 164,
March, 1962.
4. Jones, B. 1.: Cross Modulation in Transistor Amplifiers, Solid State Design,
p. 31, November, 1962.
5. Fewer, D. R.: Transistor Nonlinearity - Dependence on Emitter Bias Current
in PNP Alloy Junction Transistors, IRE Trans. on Audio, vol. AV-6, p. 41, 1959.
6. Boxall, F. S.: Base Current Feedback and Feedback Compound Transistor,
Semiconductor Products, vol. 1, no. 5, pp. 17-24, September-October, 1958.
7. Aldridge, E. E.: Engineering Treatment of Transistor Distortion, IRE Trans.
on Circuit Theory, vol. CT-9, p. 183, June, 1962.
The Advanced Orbiting Solar Observatory (AOSO) scientific mission depends on a

sophisticated communications and data handling sub-system conceived and built
by TI.
5
VHF and UHF Amplifiers

and Oscillators Using
Silicon Transistors
by Harry F. Cooke
INTRODUCTION
The amplifiers, oscillators, and signal sources to be discussed in this chapter
cover a variety of applications at frequencies from 500 Mc through X band. These
include wide-band, low-noise amplifiers, oscillators delivering 50 mw at 2 Gc,
harmonic power up to 25 mw at 4 Gc and (with a varactor multiplier) up to
25 mw at 9.2 Gc.
The transistors used in these applications are a new generation of UHF silicon
devices.
THE Tl3016A AND 2N3570

The TI3016A and 2N3570 are identical electrically, but are supplied in different
packages (TI-line* and TO-IS, respectively). These devices are planar-epitaxial
silicon transistors that feature very small dimensions made possible by advanced
photomasking techniques. Interdigitated base and emitter contacts result in very
low base resistance. Figure 1 is a photograph of the completed silicon chip.
Four base fingers and three emitter fingers are clearly seen, as well as the expanded
areas for making external contacts. The total area of the base diffusion window
is 7.2 sq mils.
The outstanding performance of this unit results from the following high-
frequency parameters:
1. very high cutoff frequency: h::::::: 1.8 Gc
2. very low base resistance: rb'::::::: 10 to 20 ohms
3. low capacitance: Cc::::::: 0.5 pf
These parameters are the result of the very narrow base (base width is in the
order of 0.01 mils) and the other very small dimensions. The electrical charac-
*Trademark of Texas Instruments
61
Fig. I. 2N3570. Tl3016A geometry showing the four base fingers

and three emitter fingers.
teristics of this unit are summarized in Table 1.

Some of the design considerations involved in the TI3016A are of interest:
1. High cutoff frequency: Several structure-determined time constants are in-
volved in cutoff frequency. The most important of these is the base width. An
important phase of the development of this transistor was the development of
suitable base and emitter diffusions so that a base width of about 0.01 mil could
be consistently realized.
Table 1. Characteristics of 2N3570 and T/30J6A
2N3570 TI3016A
(TO-18 package) (TI-line package)
(Useful to 1.5 Gc and
then package limited)
Min. Typical Max. Min. Typical Max.
BVCBO 30v 30v
(10,ua) (10,ua)
hFE 20 200 20 200
(6 v, 5 rna)
rb'Cc 5 psec 8 psec 5 psec
(6 v, 5 rna)
fT 1.5 Gc l.7Gc l.7Gc
(6v,5ma)
NF 1 Gc 6.0 db 7.0 db 6.0 db
(6v,2ma)
Fmax 4Gc 4Gc
Po 60mw 30mw
(1 Gc, 20 v, 15 rna) (2 Gc)
2. Low base resistance: For convenience, the base resistance may be separated
into two components: that part underneath the emitter and that part between the
emitter and base contacts. The first part may be minimized by using very narrow
emitters. The emitter width is about 0.1 mil in the TI3016A. The second part is
minimized by close spacing between emitter and base contacts and by paralleling
many paths. The spacing between emitter and base contacts is 0.2 mils in these
units, and the interdigitated geometry provides six parallel paths.
Base resistance may also be lowered by proper diffusion profile, although other
factors must be considered. The T13016A has a very heavy concentration of impuri-
ties in the base and a very shallow diffusion front. These lower the resistivity of
the base, particularly under the emitter where an appreciable portion of the base
resistance usually exists.
By combining an optimum diffusion profile with interdigitated geometry, a
small-signal silicon transistor with rb' in the order of 15 ohms has been realized.
3. Low capacitance: Low capacitance is a desirable feature in any high-frequency
device. The most effective way to reduce eapacitance is to reduce the junction
areas. The junctions of the T13106A and 2N3570 are quite small; the actual
areas are:
Collector-base junction area:::::: 7.2 sq mil
Emitter-base junction area :::::: 0.9 sq mil
It is possible to reduce collector capacitance by raising collector resistivity, or by
increasing the collector-base voltage. There are practical limits to these changes,
however, and other factors must be considered. Among these are collector series
resistance, and behavior of the device at various voltages and currents (which is
influenced by the width resistivity of the collector epitaxial region).
LARGE·SIGNAL BEHAVIOR OF TI3016A

These devices work well as large-signal oscillators and amplifiers. The factors
that influence large-signal behavior are discussed here, along with some modifi-
cations to the basic structure which will permit even higher outputs.
Variation of Parameters. Under large-signal conditions, the a-c signal is of
sufficient magnitude to influence the d-c operating point of the amplifier or oscil-
lator. It is important, therefore, that the parameters be as nearly independent of
current and voltage as possible. For example, the high-frequency current gain is
always current and voltage dependent to some degree, but proper use of epitaxial
techniques will tend to minimize this dependence.
At large-signal levels and high emitter currents, the input impedance of a
transistor is essentially rb'. Since this is a loss resistance, it is important to keep
rb' low-even more important than in the small-signal case. The collector capaci-
tance Cc is voltage dependent and may vary considerably as the collector voltage
swings with large signals. This effect is generally secondary compared to other
effects, but may be useful to enhance harmonic generation.
Dissipation. Although the TI3016A and 2N3570 are relatively efficient devices
and will deliver appreciable power at microwave frequencies, it is of interest to
consider methods for increasing power handling capability.
Obviously, the package must provide adequate thermal properties, as well as the
proper high-frequency characteristics.
A unique problem is associated with the silicon chip itself. The active area of
the transistor is so small that it acts as a point source of heat. When the wafer or
chip is mounted on an adequate header, the bulk of the thermal impedance is in
the silicon wafer. Under these conditions, increasing the size of the active transistor
area is an inefficient way to increase dissipation. It is more efficient thermally to
provide two or more small units dispersed over the chip. If these units are sep-
arated by at least the thickness of the wafer, the thermal impedance is nearly
inversely proportional to the number of units. The actual spacing between such
multiple devices on a single chip is a compromise between dissipation and the
parasitic inductance and capacitance added by interconnecting leads. Paralleling
devices with evaporated lead patterns can significantly alter performance because
of the additional capacitance of the leads.
Such multiple-unit-chip devices as the TIXS12 (four TI3016's in parallel) can
offer greatly increased power capability. The TIXS12 produces a minimum of
0.25 watts at 1.5 Gc.
APPLICATION OF THE TI3016A AND 2N3570
A description of these devices, with some of their performance characteristics,
has been presented earlier. This section provides more specific information on per-
formance and circuit design using these devices.
Admittance Parameter.s. The admittance parameters provide probably the
most useful source of information on gain, matching, and stability.· A complete
set of the common-emitter admittance parameters is given in Figs. 2 through 5.
16.0...----------------------,
12.0
8.0
0
l:
2 4.0
2
'i
;::
0
]j
- 4.0
- 8.0
- 12.0 L - - _ - L ._ _" - - _ - - ' -_ _-'-_--L_ _...L-_---''---_...J

4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 36.0
B!(yn.)MMHO
Fig. 2. 2N3570 Ylle V5. frequency.
·One of the more helpful considerations of admittance parameters is presented in
Rollett, J. M.: Stability and Power Gain Invariants of Linear Twoports, IRE Trans.,
vol. CT-9, no. 1, pp. 29-32, March, 1962.
200Mc .
-0.8
-1.6
500Mc .
Vce'IOV I C '5MA
-2.4
o
i -3.2
2
,.. -4.0
.sl
-4.8
-5.6
-6.4
1500Mc
-7.2 L..-_--'-_ _-'--_---'-_ _-L-_----'_ _-'
-4.0 -32 -2.4 -1.6 -0.8 o
Fig. 3. 2N3570 YIZe VS. frequency. III (YI2.> MMHO
-10.0
-20.0
-30.0
§!
:Ii
:Ii
. . -40.0
i!
11 -50.0
-60.0
200Mc
-70.0
_80.0'--_-'-_---L_ _-'--_--'-_ _L..-_-'-_---L_ _...L-_-'-_ _"--_........_--'

-40.0 -30.0 -20.0 -10.0 o +10.0 +20.0 +30.0 +40.0 +!lO.O +60.0 +70.0 +80.0
!!!(Y2Iel MMHO
Fig. 4. 2N3570 YZle VS. frequency.

24.0 1500Mc
VCS"IOV
IC"5MA
20.0
..
:J:
2 16.0
2
N
~ 12.0
!l
8.0
4.0
o 4.0 8.0 12.0 16.0 20.0 24.0
B!~MMHO
Fig. 5. 2N3570 Yzz e vs. frequency.
These are plotted with frequency as a parameter from 200 to 1500 Mc, the upper
limit of the General Radio 1607 A Transfer Function and Immittance Bridge.
These parameters are also plotted vs current at 500 Mc in Figs. 6 through 9.
35.0 35.0
BJ (rll.)
30.0 30.0
0
:J:
2
25.0
fin (r".)
/ 25.0
0
:J:
2
2
2 20.0 20.0
• VCS"IOV •
-:I
;:
15.0
f"500Mc
15.0 '""
!I
10.0 10.0
5.0 5.0
x
.10 1.0 10.0 100.0

IC - COLLECTOR CURRENT-MA
Fig. 6. 2N3570 Ylle VS. Ie.

.08 .50
.04 0
VCS"IOV
0 f=500Mc - .50
..
0 0
..
0
:I: B.!(YI2e' :I:
2 -1.0 2
2 -.04 0
2
0
~
,.. -1.5
,..~
-.08
~ j
x-x x
-.12 Im.\YI2e) -2.0
-.16 -2.5
.10 1.0 10.0 100.0
IC -COLLECTOR CURRENT - MA
Fig. 7. 2N3570 Yl2e vs. Ic.
40 20
30 f- - 0
20 f- - -20
0 o
:I: :I:
2
2 10 r- - -40 2
~
•
,..N ,..N•
01- - -60
:i
-10 t-- - -80
-20 t-- - -100
I I
.10 1.0 10.0 100.0
IC -COLLECTOR CURRENT -MA
Fig. 8. 2N3570 Y21e vs. Ic.

1.4 . . . - - - - - - - - - - - - - - - - - - - - - - - , 7.0
1m (Y22.1
x_ _ _x_ x _ - x
1.2 6.0
1.0 5.0
0 Vce =10V o
::r f = 500Mc ::r
2
2 B 4.0 ~
11
N
....
N
,..N
.6 3.0
N
~
~ SI
.4 2.0
.2 1.0
.10 1.0 10.0 100.0

Ic- COLLECTOR CURRENT-MA
Fig. 9. 2N3570 Y27e VS. Ic.
Noise Figure. Plots of noise figure vs frequency for an average 2N3570 are
shown in Figs. 10 and 11. Two currents and source impedances are indicated.
Selecting Operating Points. The primary requirements of an amplifier are
usually a minimum acceptable gain and a maximum acceptable noise figure. Other
requirements, such as bandwidth, linearity, or stability in an environment, may be
nearly as important, and in some cases may force a compromise in other charac-
teristics. For the present, however, let gain and noise figure be the primary con-
siderations.
If gain were the only criterion, selection of an operating point would be straight-
forward. The operating point giving maximum (or near maximum) gain is se-
lected. When noise figure also must be considered, selecting the operating point
may not be so simple, since the noise figure of the amplifier may be a function of
both gain and noise figure of the devices in the first two (or possibly three) stages.
Power gain usually increases with increasing emitter current and then becomes
flat for an appreciable range of current. Gain will also increase slowly with increas-
ing collector voltage up to breakdown. The power gain of the TI 2N3570 is
essentially constant with emitter current from 3 to 15 rna, and collector voltage
from 4 to 20 volts.
Noise figure, on the other hand, is relatively independent of collector voltage,
although there may be a broad minimum. Noise figure is at a minimum at a fairly
well-defined emitter current. The noise figure of the 2N3570 tends to a minimum
value at emitter currents between 1 and 3 rna, and collector voltages between 3 and
10 volts. The minimum noise figure tends to occur at higher currents as frequency
is increased.
SOD-Me Amplifier. The first design example to be considered is a 500-Mc
linear amplifier using the 2N3570. Assume that the requirement is for an amplifier
with a noise figure of 4 db or better and an average gain of about 16 db. From
6.0
5.0
4.0
LIJ
a::
i; 3.0
u:
LIJ
(f)
02.0
z
1.0
O~--------------------------L---------------~--
500 1000
FREQUENCY Mc
6.0
5.0
4.0
LIJ
a::
~
(!) 3.0 IE =2mo'
u: RG· 5On.
LIJ
(f)
2.0
0
z
1.0
0
500 1000
FREQUENCY Mc
Figs. 10 and 11. Effect of Rs and operating point on noise figure.
Fig. 11, the average noise figure is 3 db for a transistor operated at 5 rna and with
an Rg of 50 ohms. The amplifier could be operated at a lower current to obtain a
better noise figure, but at lower gain.
The next step is to obtain the 500-Mc y-parameters from Figs. 6 through 9.
These are listed in Table 2. The calculated unilateral gain is only slightly greater
than 16 db, the design objective. Therefore, the amplifier must be neutralized.
Neglecting the effects of the neutralizing network, the input resistance of the
transistor is 1/0.0195 or 51 ohms; the output resistance is 1/0.00076 or 1300
Ta&/e 2. Typieal Common-emitter y Parameters of the 2N3510 at 500 me
Yll = + 19.5 + ;13.5 millimhos

Y21 = + 15.7 - ;66.8 millimhos
y22 = + 0.76 + ; 6.36 millimhos
Y12 = - 0.04 - ; 1.76 millimhos
Unilateral Gain, U = 18.6 db, from y parameters
ohms, in parallel with 1.8 pf. The input can be connected directly to the 50-ohm
source with a negligible mismatch loss. The output will be matched by a modified
pi network.
Figure 12 shows the pi network with an additional series capacitor to increase
the flexibility of the system. A piece of ~" silverplated brass rod serves as the
inductor. The design of the pi network will not be covered here as it has been
thoroughly described in the literature.1.2
Figure 13 shows the complete schematic of a one-stage amplifier. The input
network contains an additional element G so that the source can be connected
alternately at point A. This would be desirable, for example, when minimum noise
figure is desired. Neutralizing voltage is obtained from a coupling loop L3 which is
a silverplated strip of beryllium copper running parallel to L2. Figure 14 is a photo-
graph of the complete amplifier. The placement of L3 can be critical.
Table 3 shows a comparison of measured and calculated gains made on this
amplifier. The agreement is fairly good, the difference in measured gain being
attributable to circuit losses.
If the prime requirement had been for minimum noise figure, the design pro-
cedure would have varied somewhat. The best combination of emitter current and
source resistance can be found by using an automatic noise figure meter in com-
bination with a stub tuner and a suitable test fixture.*' At high frequencies, the
correlation factor between input and output noise of a transistor has the dimensions
of capacitance. As a result, the optimum noise source is slightly inductive. In gen-
eral, the optimum noise source resistance decreases with increasing frequency. The
3-35pf
1.8 pf 1.5-IOpf 2-20pf

1.3K.Il.
TRANSISTOR NETWORK
Fig. 12. Output network for SOO-me amplifier.
*' A suitable fixture is described in a later chapter, "Noise Figure Measurement:'

NEUTRALIZATION
2.2pf ADJUST
C! ~ 3-35pf
.~--~~--------~)
.....----fAC' C2
--- -, I Cs
1.5-20pf 1.5-IOpf I I.S-IOpf
I
1200 RI I
.n I
I
1000pf I
I
I
C4 I
-VEE +VCC
L,:SILVER-PLATED BRASS ROD-I 9/IS"LENGTH,1I4"DIA.
L2:SILVER-PLATED BRASS ROD-2 1/8" LENGTH,1/4"DIA.
Fig. 13. SOO-mc small-signal common-emitter amplifier.
optimum emitter current, however, increases with increasing frequency, reaching

a maximum near the upper useful frequency. The maximum value of Ie is approxi-
mately the value at which fOl peaks. Figure 11 shows this effect; the I-rna, IOO-ohm
curve is about optimum for 500 Mc, and the 5-ma, 50-ohm curve is best for I Gc.
Fig. 14. SOO-mc amplifier.

Table 3. Comparison of Calculated and Measured Gains of 2N3510 at 500 mc
Calculated Measured Test
fixture
From From loss
fT&n,'C c y parameters (approx.)
1. 18.5 db 18.7 db 16.2 db 2db
2. 18.9 db 18.9 db 16.5 db 2db
3. 18.5 db 19.7 db 16.7 db 2db
4. 18.5 db 19.9 db 17.0 db 2db
If linearity had been a factor in the design, this would have complicated the
selection of an operating point still further. When low distortion is important,
it is desirable to operate at a higher emitter current.
SOO-Mc Power Amplifier-oscillator. Power amplifiers or oscillators cannot be
designed as simply as linear amplifiers because most of the transistor parameters
vary widely with signal level. Thus, this design will be started with a few simple
calculations, and then will proceed to a description of the hardware. Assume that
a power of 200 mw is desired. Approximate values for the maximum collector
voltage and load impedance may be calculated as follows:
VCB:::::: B~cBO
40
= -2 = 20 volts
(VCB)2 202
RL:::::: 2Po = 2 (0.2) = 1000 ohms
Since RL is greater than 50 ohms, a simple capacitance probe can be used for
matching. RL is, however, high enough that care should be exercised to see that
element Q's are high. A tunable cavity will assure this and will give the additional
flexibility of wide-range tuning.
The design shown in Fig. 15 will accommodate either TO-5 or TO-18 tran-
sistors, if the collector is tied to the case internally. If the collector is isolated, a
connection must be made between coIle·ctor lead and cavity. Alternately, the
collector lead may be soldered to the case. The center conductor of the cavity is a
copper rod, and the transistor is inserted into the end to make electrical connection.
The copper rod is a very efficient heat sink.
The top of the cavity is made of two plates, the upper one being insulated from
the body of the cavity by O.OOI-inch Mylar*. The upper plate is the base con-
nection, and is at RF ground, but is isolated for biasing. Lastly, the emitter is con-
nected to a modified N-type receptacle. An outside d-c block gives the necessary
isolation to the emitter line for biasing the emitter. The movable piston makes
contact with the cavity walls and the center rod, through beryllium-copper helical
springs set into 0.05-inch lands in the piston.
When used as an oscillator, a sliding short is connected to the emitter via the
outside d-c block. By adjusting the sliding short, the optimum susceptance for
oscillation can be presented to the emitter. Frequency is adjusted by sliding the
* Reg. Trademark, E. I. DuPont.
OSC
AMP
Fig. 15. Tunable high-Dower fixture for TO-5 and TO-1S transistors.
piston to the appropriate length. The 2N3570 will tune from about 400 to 1000
Mc in this cavity.
The cavity also can be used as a common-base power amplifier by simply replac-
ing the sliding short with a stub tuner to match the input to a generator.
Wideband Amplifier, 0.5 to 1.45 Gc. Wideband amplification with tran-
sistors at L band was first described by Hamasaki3 in a design using germanium
mesa transistors. The amplifier described here uses TI3016A silicon transistors in
a somewhat different circuit configuration. The interstage coupling in this design
is a simple LC combination with peaking designed to com.pensate for the high-
frequency gain falloff of the transistor. A single stage of the am.plifier is shown
in Fig. 16.
STAGES 1-4,
IE = 2 rna
STAGES 5-8,
IE = 5 rna
ALL CAPACITORS AEROVOX

EF4, IOOOpf
L-I, 3T NO.22 BUS ON 1/4 W
RESISTOR
L-2, 2T NO. 22 BUS,O.125" 10
TAPPED APPROX. IT
Fig. 16. L-band amplifier single stage.

An unneutralized common-emitter stage was chosen because, of several con-
nections, this gives the greatest bandwidth and is unconditionally stable. However,
the stage gain is low, averaging less than 4 db per stage. The low stage gain
means that the overall noise figure is strongly influenced by the noise in the second
and third stages, as well as the first. A new design using a common-base first stage
has been built. It also may be possible to alternate common-base and common-
emitter stages to obtain better gain and lower noise figure in fewer stages, while
still maintaining the absolute stability of the present design.
The operating current for optimum noise is a compromise necessitated by the
low stage gain and large bandwidth of the amplifier. Since the intrinsic transistor
noise figure is rising rapidly at the upper end of the amplifier response, it is best
to make a design that favors the higher frequencies.
In selecting the stage current, the early stages need to have a minimum noise
measure, i.e., both gain and noise must be considered in the overall noise figure.
The later stages are biased for maximum gain. For this amplifier, a 2-ma operating
point is used in the first stage, increasing to 5 ma in the last four stages. A photo
of the complete amplifier is shown in Fig. 17. Figure 18 shows the performance
of the amplifier in graphic form. The gain is flat within ± 1 db across the specified
passband. The noise figure is good but not as low as that of a similar amplifier that
was built using the 2N2999 germanium mesa transistor. Phase response is also
very good, although this was not a design criterion.
General-purpose Fixed Tuned Oscillator Amplifier. A transistor mounted in
a TO-18 package can be used to about 1.5 Gc before losses become excessive,
although package resonances in some units may set a lower limit. In the fixture
described next, the 2N3570 will give 50 to 100 mw as a self-excited oscillator at
I Gc. The design is similar to the 500-Mc cavity except that frequency is trimmed
with a capacitive probe. Figure 19 is a drawing of the fixture.
One of the unique features of this cavity is the method of introducing the col-
lector bias. A discoidal capacitor is soldered to the top of the tubular center con-
ductor of the cavity. The bias lead enters the cavity through the bottom and termi-
nates in the discoidal capacitor which, in turn, is connected to the collector of
the transistor.
Note that the transistor socket is mounted horizontally and that the transistor
is plugged into the open end of the socket. This arrangement allows a minimum
of lead length for all elements. The base grounds directly to the cavity cover, while
the emitter is connected to the N-type receptacle. An outside d-c block _connects
Fig. 17. Wide-band amplifier.

30
25 10
... 20 '" '" 8 ...

"0
"0
I&J
Z II::
::>
'"
(!) 15 6
(!)
....
II:: I&J
I&J
en
~
0 is
0..
10 4 z
L-BAND AMPLI FIER

WITH
5 2
TIX3016 TRANSISTORS
0 0
0.4
FREQUENCY Gc
Fig. 18. L-band amplifier with TI3016A transistors.
EMITTER LINE
ALL PARTS SILVERPLATED
MODIFIED TYPE N BRASS EXCEPT WHEN
NOTED OTHERWISE
RECEPTACLE
OUTPUT LOADING
ADJUSTMENT
~~~ii~~~ST:EE:L SPRING
'rYYr-.:c= ~~~~~~_>--...J-OUTPUT RG 58IU CABLE

A
TOP VIEW
9".GL-.,......-FREQ ADJUST
PROBE
CAVITY ONLY
Lilld SECTIONED AT A
0.25"
0.87!1"lD.
VIEW FROM FREQ.
ADJUST PROBE END
COLLECTOR
SIDE VIEW VOLTAGE
LEAD
Fig. 19. l-Gc coaxial cavity for TO-S or TO-18 transistors.

to the receptacle and thus makes it possible to bias the emitter via the line joined
to the d-c block.
Another way to bias the emitter is to feed bias through a shunt choke or resistor.
This method results in a much more compact system and can be used where either
the absolute maximum output power is not needed, or the transistor is being oper-
ated so far below f max that emitter immittance is not critical.
Since the cavity does not have the case connected to a heat sink, it is limited to
modest input power - e.g., less than 1 watt. For most measurements, the can is
left floating, although it can be grounded when testing transistors such as the
2N3S70 with an isolated collector. At 1 Gc it is not necessary to add atlditional
feedback capacitance external to the transistor if the can is left floating.
It also appears that transistors in some types of encapsulation require external
capacitance to maintain oscillation. A capacitive "gimmick" which will do this can
be made by sliding a piece of Teflon *-insulated wire inside a small eyelet and
soldering these between the collector and emitter. Moving the wire in and out of
the eyelet will usually give sufficient range of adjustment. This cavity, like the
one described previously, can also be used as an amplifier by connecting a stub
tuner to the input.
2-Gc Oscillator. The TI-linet-packaged TI3016A can be used as a 2-Gc power
source with an average output of 50 mw. Efficiency is about 16 per cent. The base
is the common terminal in the TI-line package. The oscillator circuit is shown in
Fig. 20. Note that a double-stub tuner in the collector line acts both as a tuning
and a matching element. As in the other oscillators previously discussed, the
internal capacitance of the transistor is the feedback element.
Both the double-stub tuner and the tunable emitter cavity are isolated from the
V-shaped center piece by O.OOl-inch Mylar* film for biasing purposes. The capaci-
tance across these connections is greater than 100 pf, which is adequate for the
range of frequencies covered by the fixture. The emitter cavity is tuned by a
movable piston using beryllium-copper springs for contacts. The latter are wound
from O.OOS-inch wire with an outside diameter of 0.05 inch, and are inserted into
0.045-inch lands in the piston. This type of contact appears to be very efficient
and lends itself better to small assemblies than bigger stock.
An interesting characteristic of the TI3016A in this kind of oscillator is its sec-
ond harmonic efficiency. If, for example, a 3-Gc high-pass filter is inserted in the
Fig. 20. 2-Gc transistor test cavity.
*Reg. Trademark, E. I. DuPont

tTrademark of Texas Instruments
output, and the output is retuned slightly, the harmonic power will be only 3 to
6 db below the fundamental, and up to 25 mw may be obtained at 4 Gc. Possibly
one of the reasons for the good harmonic efficiency of the TI3016A is that, with
proper tuning, the collector capacitance operates as a varactor multiplier.
This oscillator has been used to drive a single 4X gallium varactor frequency
multiplier to obtain 25 mw at 9.2 Gc. Another design uses a TIXS13 with two
varactor triplers to obtain 30 mw at 16.5 Gc. The simplicity of such systems makes
them attractive for applications requiring wideband tuning.
BIBLIOGRAPHY
1. Roach, W. E.: Designing High Power Transistor Oscillators, Electronics, Jan-
uary 8, 1960.
2. Rheinfelder, W. A.: Three Coupling Networks for Transistor Output Stages,
Electronic Design, October 25, 1962.
3. Hamasaki, J.: A Wideband High Gain Transistor Amplifier at L Band, Digest
of Papers, International Solid State Circuits Conference, p. 46, February, 1963.
The ASR-4 Airport Surveillance Radar is one of many complex radar systems built
by TI using TI components.
6
Causes of Noise
by Harry F. Cooke
INTRODUCTION
The process of low-noise amplification is now almost exclusively dominated by
solid-state devices. Recently, we have seen many refinements in the technology of
device fabrication, rather than the discovery of new types of devices using new
principles. These refinements are in large part responsible for the rather spectacu-
lar noise performance of today's semiconductors.
Throughout this chapter we shall use the term "noise figure" to describe noisi-
ness of a device. It is the most common term in use today and means simply the
degradation in signal-to-noise ratio caused by an amplifier, expressed as a ratio
or in db. As an example of device improvement, we may cite Shockley's early audio
transistor noise figure of 70 db, compared with 0.2 db obtainable today. One of the
reasons our technology has been so successful in improving semiconductor devices
is that our understanding of the noise mechanism in semiconductors is now fairly
complete. Even those types of noise which are not completely understood can be
controlled to a degree.
In Fig. 1, the noise characteristics of a number of types of semiconductor ampli-
fiers from sub-audio to microwave frequencies are shown. Note that the parametric
amplifier provides the lowest noise figure at both ends of the spectrum. The great
complexity of the parametric amplifier, however, makes it uneconomical to use
where other devices are available. Silicon FEr's or planar devices are most used
at low frequencies, while both mesa and planar devices are useful in the micro-
wave region.
TYPES OF NOISE
We will now describe briefly some of the types of noise found in semiconductor
amplifiers. For some of the types of noise there are simple circuit equivalents,
which are shown.
79
9
8 • \ \
7
\ \ \ VT
..0
"'tJ
u-4
6
5
\
\ , \
Plana~
\ All 01
\trans'
\
~ I
J
3 T.o.
FET \ trans~ \.. Si Planar/' JIlt
2
f'.....~
"- Ge Me";a/
4~Riard~ ParaOlP
o
10 cps I kc 100 kc 10 Mc 1 Gc
Log Frequency
Figure 1
Thermal Noise. Thermal noise power is generated by all solids not at absolute
zero; it arises from the fact that the thermal agitation of carriers gives rise to
electrical energy. The thermal power generated depends only on the temperature
(and the bandwidth over which it is measured). This agitation is so completely
random that when we attach terminals to the medium, we find that the voltage at
the terminals covers all frequencies. In fact, the mean-squared value of the voltage
is proportional only to resistance, temperature, bandwidth, and a constant called
"Boltzmann's Constant." Figure 2 shows how we can represent this voltage from
a circuit point of view.
where
k = Boltzmann's constant = 1.38 x 10- 23 joules/oK
i 2th = 4kTt:::.fG T = temperature in degrees Kelvin = 300° at room temperature
t:::.f = bandwidth in cps
-r
e th = 4kTt:::.fR R = resistance in ohms
Figure 2
Here we equate a noisy resistor with a nOlseless resistor plus a voltage gen-
erator. In semiconductors, thermal noise voltage is found wherever there is an
appreciable bulk resistance, as in the base resistance of a transistor. Note that the
noise power is proportional to bandwidth, but not frequency; the voltage is the
same regardless of where we take our slice of bandwidth in the frequency spectrum.
Shot Noise. The second type of noise with which we will be concerned is shot
noise. Shot noise occurs whenever a current flows, as from the influence of a field
in vacuum tubes, or a concentration gradient in transistors and diodes. Although
there is some degree of organization in the motion of carriers (their average motion
is in one direction), their final arrival is completely random. This randomness
gives rise to a uniform frequency spectrum of noise, as in the thermal case. The
mean-squared noise current is proportional to the charge on an electron, the d-c
current flowing, and the bandwidth.
Figure 3 gives the circuit representation of shot noise in a diode.
The noisy diode is here equated with a resistance equal to the dynamic resistance
..!.. •
ISH=
•
T=2qld AI
ISH c
nkT _ 25
r = --=-ohms
qldc Idc
-2- T 2
eSH=ISHr
2
= 2 I t:.f(nkT)
q dc qldc
=2kTt:.fr
-19
q = charge of an electron = 1 .59 x 10 coulombs
n = a constant == 1 for transistc~r
I:J = bandwidth in cps
Figure 3
of the diode in parallel with a noise-current generator. The dynamic resistance of
a diode at average carrier injection levels has been shown to be equal to nkT/qIdc,
where the symbols have the meaning shown in Fig. 3. In many circuits it is more
convenient to have a voltage generator than a current generator. Since the dynamic
resistance of the diode has been defined in terms similar to the noise current, we
find that a simple arithmetical manipulation transforms the shot-noise current
generator into a resistance in series with a voltage generator as shown. Note that
the form of the shot-noise voltage generator is almost identical to the thermal-
noise generator, but is y2/i times as large. At very high frequencies, where the
transit time of carriers across the diode becomes appreciable, the diode resistance
decreases. In other words, the diode behaves as if we had paralleled another resistor
with it. It has been found that this resistance shows full thermal noise.
Other Types of Noise. The two types of noise just mentioned are the only
kinds that affect high-frequency transistors and other RF devices to any degree.
The remaining types of noise which we will now discuss do not affect semicon-
ductor operation except under special conditions.
The first and most important of these is 1/f noise, sometimes called flicker, or
scintillation noise. It is called 1/f noise because the noise power per unit band-
width increases inversely with frequency. It usually occurs only at the lower audio
frequency, but can manifest itself up into the UHF region. The exact causes of 1/f
noise are not known at present, although many theories have been set forth in
explanation of the phenomenon. It is even difficult mathematically to write a sim-
ple expression for 1/f noise. Most 1/f noise in transistors has been localized to
what are called slow states within the emitter depletion layer. These slow states,
or traps, capture and release carriers at different rates, but with energy levels vary-
ing inversely with frequency.
Figure 4 shows a plot of the low-frequency noise figure of a transistor vs. log
frequency. The noise figure increases at a 3 db per octave rate for frequencies
3 db/octave slope
3 db
F
p
1\
I\
log freq_
Figure 4
below the point called the corner frequency feL. The corner frequency is defined
as that frequency at which the 1/f noise power equals the mid-frequency noise
power. At this frequency the noise figure has increased 3 db over the mid-frequency
figure. Once the corner frequency has been determined, we may write the noise
factor in the 1/f region as:
F = Fp (1 +~)
Admittedly, we have used a mathematical convenience to define a type of noise
that we cannot designate by other means. However, once we have found the corner
frequency for a given type of transistor, this frequency will remain fairly constant
for a given set of operating conditions with other transistors of this type. Excessive
1/f noise may be an indication of defects in transistor fabrication. In general,
planar and FET transistors have lower 1/f corner frequencies than other types.
Another type of noise commonly found in transistors is generation-recombination
noise. G-R noise is basically a thermal effect. The noise is generated when carriers
recombine or separate after crossing a junction causing a net change in charge.
G-R noise is generally negligible in good transistors. It appears most often in tran-
sistors having very low current gain, and falls off rapidly at high frequencies.
Avalanche noise is present in Zener diodes and transistors operated in the break-
down region. Its presence is due to the fact that carriers under the influence of very
large fields may collide with and release other carriers within the crystal lattice.
This multiplication of carriers during breakdown can produce very large noise
voltages. Fortunately, the effect occurs in a region where transistors are normally
never operated for other reasons, and is of no importance in amplifying devices.
It has been used as a noise source for test purposes.
NOISE SOURCES AND EQUIVALENT CIRCUITS

We will next show how noise sources fit into the equivalent circuits for four
types of semiconductor amplifiers. See Fig. 5.
e
E
esh
"" Ye
•
aiE
R ~b"
9
Yc
B
2
~b I ~ (~+ rb I + R )
_ e e 9
FHF - 1 + R + ~ + - - - - - - ' ' ' - -
9 9 2a R r E
o 9
Figure 5
The transistor, except in the 1/f region, has two types of noise sources; thermal
and shot. The thermal noise comes from the base spreading resistance, or more
simply r'b. The emitter-base diode develops full shot noise as does the collector-
base diode. When we calculate the noise figure of the transistor, we must recognize
that the shot noise in the two diodes comes about from almost exactly the same
carriers. Therefore, we must subtract from one diode that noise which we have
already accounted for in the other. If we sum the noise voltages in the output of
the transistor, only the uncorrelated part of the collector noise is added. In the
simplest case, the collector and emitter shot-noise generators are correlated by the
alpha of the transistor. The noise figure expressions for the common-base and
common-emitter connections are the same. The three terms shown in the noise
figure equation represent the contributions of the base resistance, emitter, and un-
correlated collector noise, respectively. If we examine the noise figure equation, we
can immediately make some observations as to the most desirable features of a
low-noise transistor. First of all, the base resistance should be low. Next, fa and
hFE should be high. leo should be as low as possible. The term o!o approaches 1
when hFE is high. At low frequencies the frequency-dependent part flfa vanishes,
and the last term of the noise figure depends primarily on the common-emitter
current gain hFE. At low frequencies and high source impedances, the entire equa-
tion degenerates to:
(1)
(2)
= re V hFE if rb < < re, at low frequencies

at very high frequencies
The next most obvious question is "What Rg will give the best noise figure?"
This is found by differentiating the noise equation with respect to R g • The result
is then set equal to 0, and Rg is solved for. The result is shown in Eqs. (1) and
(2). At high frequencies Rg(opt) simplifies to r'b + reo This value of Rg(opt) may
be substituted in the original noise figure equation to get the expression for the
minimum noise figure Fmin.
Noise in Other Solid-state Amplifying Devices. The field-effect transistor
(FEr) in the present state of the art is used most at low frequencies, but it is
becoming a UHF device. It is subject to the same types of noise that are found in a
conventional transistor, including 1/f noise. Most FET's are planar in design, and
the 1/f noise does not become significant until a very low frequency is reached.
The noise mechanisms in the FET are quite similar to those in the diffusion
transistor except for the part which capacitance plays. Gate-to-source capacitance
can couple output noise back to the input since input impedance is high. Since this
capacitance is distributed in nature, not all the capacitance acts as a feedback
element. To properly divide the chit'lnel resistance, Bechtel* has suggested a con-
stant, A. The significance of A is shown in Fig. 6. A more conventional schematic
of an FET and the equation for noise figure are shown in Fig. 7.
*Bechtel, N. G.: A Circuit and Noise Model of the Field-effect Transistor, Proc.
of the International Solid State Circuits Conf., February, 1963.
C3 0
T
1-).
r----c->-......- -........ I - - -....

I
GS~
------J
t X
I
I
IL _______
gl _ _ _ _ -\
C1
5
CAl
c
"" gm
=-:--
Cgd 1
Figure 6
50-...- H
"""2
eTH = 4kT~fR T = 2ql~f
SH
For 011 frequencies except I/f region: 2
F = 1 + 2 AW
G -
(C + C ) + ~ [ s
W (C
gs
+C
gd
)j
9m 9S 9d 9m Gs
For low frequencies except I/f region:

- '\G
FI =1 + -
ow 9m
G ~w (C +C )
opt - 9S 9d
where
G = source conductance
s
9 = low-frequency transconductance
m
Col = frequency of operation
Figure 7
The main sources of noise in a field-effect transistor are: thermal noise in the
channel, shot noise in the gate-to-channel leakage, thermal noise in the bulk
resistances, and capacitance-coupled thermal noise at the input. Note that the
low-frequency noise figure depends on A, which is about 0.5. For the vacuum
tube, A = 2.5. Thus, for the same gm, the FET is less noisy than the vacuum tube.
The tunnel diode is a relative newcomer to the field of low-noise amplification.
It is a very-low-noise device, but since it has only two terminals, its application
differs radically from the transistors discussed previously. As with all two-terminal
amplifiers, its performance is affected by the noise in the load as well as the source.
See Fig. 8; the noise figure of the tunnel diode is: (3)
Rg Rg 1 + w2R2C2 q(Ieq)R Rg R
1 + -- - - - - - 2 + ----- -- - - ---:--~2-1- - -
F =
RL R-rs (:J + wc2R2C2 2kT rs R-rs ( : ) + wc2R2C2
The first term in the noise expression is the thermal noise in the load resistance
rL. The second term is the thermal noise from rs. The third term is the equivalent
shot noise term. This last term needs some explanation since it actually accounts for
twO separate currents. In some regions of operation, both of these currents show
full shot noise. Since these currents flow in opposition, the net terminal d-c current
may be much less than either one of the two internal currents that make it up. Thus
we use the term, "equivalent current" which can be larger than the actual external
d-c current flowing at the point of operation. The term We, the angular cutoff fre-
quency, is the highest frequency at which the device terminals still show negative
resistance. A good noise figure of merit for a tunnel diode is the reciprocal of the
negative resistance times the equivalent shot-noise current at the point where this
is maximum. It is beyond the scope of this work to discuss the many circuit varia-
tions that are possible with a tunnel diode.
The varactor, or variable capacitance diode, is the active element in most so-called
parametric amplifiers. The capacitance of a reverse-biased diode varies with volt-
k
age and according to the law of C = V C, where n usually lies between 2 and
n
i~H = 2 q 'eq ~f
-~
we = R~lT-r-S
S
' f'19 0 f
N olse ' =
merit ,
~
eq
Figure 8
R» X
c
r «X
s c
~ 1 + f ·.lnput + M
Fmin == f'idTer
R C where
M = function of circuit losses
Figure 9
3. The parametric amplifier utilizes the variable capacitance effect to obtain power
gain by translating (pumping) energy at one frequency to a higher frequency.
See Fig. 9.
The sources of noise in the parametric amplifier are thermal noise in the series
resistance, shot noise from the leakage current, and thermal noise, in the load, idler,
and input circuits respectively. The first two are characteristics of the diode alone,
the last terms are functions of the circuit. Both of the noise sources in the diode
can be made negligible by proper fabrication and design. With careful attention
to circuit details, overall noise figures of less than 1 db are attainable. Note that
we have talked about only one type of parametric amplifier. Readers interested in
the details of other types are referred to the many papers that have been written
on the subject.
Design Precautions. The following discussion will illustrate some of the pre-
cautions to be used in designing a low-noise transistor amplifier. Consider the cir-
cuit shown in Fig. 10 and the noise equivalent. The following points are to be
noted:
1. Bias resistors when they appear across an input circuit always attenuate the
desired signal to some extent. At higher frequencies their value may be much less
than that indicated by d-c measurements. It is always best to bias through the
ground end of the input tank circuit if at all possible.
2. The unloaded Q of the input tank should be as. high as possible or the loaded
Q should be as low as possible, or both. This ensures that input losses from the
tuning circuits will be low. It usually also implies that input selectivity will be
quite broad.
3. Since Rg is seldom the same as Rg(opt), some transformation is usually neces-
sary. This can be done with tapped transformers (as shown), LC networks, baluns,
or distributed type transformers. The losses in these networks should also be low.
cc
RI = transformed R
9 9
R = equivalent loss resistance, miscellaneous losses
x
QUXL = coil loss resistance
Figure 10
4. In the UHF and microwave range all component losses can be important,
e.g., those from socket leads and coupling capacitors.
One final word of caution. Under certain circumstances it is possible that a
transistor, when operated to give best noise figure in the input stage, will not give
the minimum overall noise figure which includes the second and following stages.
The overall noise figure for several stages is shown in Fig. 11. If the point of
operation chosen to minimize F 1 is such that G 1 is low or F2 is high, or both, then
the overall noise figure may be improved by choosing a value for Rg which increases
the gain. This will deteriorate the noise figure of the first stage, but the overall
noise figure will be lower.
R
g
F -1 FN-l
21 +
F12N = Fl + G . . G 1G 2 · · G N _1
Fdb
where F = noise factor = antilog 10
Figure 11
TI telemetry equipment in the Mariner probe. Mariner voyages into deep space
are the fartherest explorations ever made by man.
7
Transistor Noise Figure

by Harry F. Cooke
INTRODUCTION
The noise figure of junction transistors has been treated by several authors (par-
ticularly Nielsen!, van der ZieF-4, and Strutt5 ) in great detail and with mathe-
matical rigor. However, a development of the noise-figure expression using a some-
what simplified approach is useful to many engineers, particularly those engaged
in circuit design. A great deal of noise theory is statistical in nature and quite com-
plex. The actual derivation of the thermal and shot-noise generators is avoided in
this chapter for this reason. The development of the noise-figure expression and
following remarks attempt to use circuit concepts more familiar to the average
engineer.
There are three broad classifications of noise sources usually found in a tran-
sistor - flicker (or 1/f) noise, thermal noise, and shot noise. Flicker noise begins
to influence noise figure at some relatively low frequency (feL, the low-frequency
noise corner, Fig. 1) and increases as frequency decreases at a 3 db/octave rate.
As yet, flicker noise is not completely mathematically predictable. Fortunately, the
Fdb 3 db/octave slope
frequency -
Figure 1
91
flicker noise corner can be lowered to some extent by transistor fabrication tech-
niques, and usually is not important to high-frequency operation.
Neither thermal noise nor shot noise is frequency dependent, and both exhibit
uniform noise output through the entire useful frequency range of the transistor.
The internal gain of the transistor does vary with frequency, however, and falls off
as frequency increases. The noise figure begins to rise when the loss in gain
becomes appreciable. The frequency at which this occurs is called fCR, the upper-
or high-frequency noise corner. Since the power gain falls inversely as frequency
squared, the noise figure rises as frequency squared, or 6 db per octave. This is
shown graphically in Fig. 1.
THI;RMAl NOISE
Thermal noise is due to the disorganized nature of the motion of charges within
a device. This motion gives rise to an electrical power that is proportional to the
absolute temperature and the bandwidth. The noise voltage across the terminals
of a device is a function of the power and the resistance of the device. The mean-
squared noise voltage, enth2, which appears at the terminals is:
enth2 = 4kTR~f,(volts)2, (1)
= 126 V RM X 10.12 volts at 290 K
or enth 0
where k = Boltzmann's constant = 1.38 X 10-23 joules/Ko

T = temperature in degrees Kelvin
R = resistance of the device in ohms at its terminals
f = bandwidth in cycles/sec.
Because of the random character of the motion of the charges, the thermal noise
spectrum is uniform throughout the useful range of present transistors as long as
R is a pure resistance.
From a circuit viewpoint, thermal noise may be represented as a voltage gen-
erator in series with a noiseless resistor, as shown in Fig. 2.
SHOT NOISE
Shot noise occurs under certain conditions when a current flows. The current
flow may be caused by a field as in vacuum tubes or by a concentration gradient
(i.e., diffusion) as in transistors. In both cases, it is caused by the random nature
of the arrival of the charges. If the charges arrived uniformly, a single frequency
would be generated which would be about 1016 cycles/ma of doc current. How-
ever, the process is completely random and, like thermal noise, the shot noise
spectrum is uniform.
rv e =./4 kT6fR
n
Figure 2
The shot-noise energy associated with a stream of carriers (or charges) - i.e., a
d-c current-is proportional to the charge of an electron, the d-c current flowing,
and the bandwidth. This can be represented by a constant-current generator,
in 2, where:
in 2 = 2qIde~f (2)
where q = charge of an electron = 1.6 X 10-19 coulombs
Ide = d-c current flow in amperes
Af = bandwidth in cps
The "equivalent circuit is that of a current generator in parallel with a noiseless
conductance, go, where go is the effective conductance of the region through which
the current stream flows (Fig. 3).
For transistors and semiconductor diodes at low carrier injection levels, the
conductance go is the incremental conductance of the P-N junction and is given
by the following expression:
(3)
(3a)
where q, Ide, k, and T have the same meaning as used previously.

Since we now have an expression for the conductance of the diode, it is possible
to convert the mean-squared shot-noise current generator to an equivalent voltage
generator.
" 2
- In
e n2- -go2
_
= 2qIdeAf kT!
qIde go
2kTAf
go
= 2kTroAf (4)
1
where ro= -
go
Figure 3
Note that the shot-noise voltage is exactly the same in form as the thermal-noise
voltage, but is y2!2 times as large. The alternate equivalent circuit is then as
shown in Fig. 4. The equivalent circuit again is that of a voltage generator in series
with a noiseless resistance.
At very high frequencies, usually beyond the useful range of present transistors,
the transit time of the carriers across the diode becomes appreciable. This intro-
duces a conductance in addition to go shunting the diode which will show full
thermal noise. The total shot-noise current under these conditions will be:
(5)
where g is the high-frequericy diode conductance.
This additional noise in transistors is attributed by van der Ziel to carriers that
cross the emitter-base junction to the base but return and recombine in the emitter
region where they originated.
TRANSISTOR NOISE-FIGURE EQUATION, HIGH FREQUENCY
The development that follows is based on the common-base configuration, but

Nielsen l has shown it to be valid for both common-base and common-emitter.
The common-collector stage, because of its larger noise figure, is usually of little
interest in high-frequency applications.
The transistor itself has three main internal noise generators:

l. shot noise in the emitter-base junction,
2. thermal noise in the base resistance, and
3. shot noise in the collector-base junction.
These noise sources can best be shown in the high-frequency T-equivalent circuit
of Fig. 5.
In Fig. 5: eesh = emitter shot noise equivalent voltage generator =y 2kTrAf
iesh = emitter shot noise equivalent current generator = y 2qIE.:lf
icsh = collector shot noise current generator ( includes noise from
leo)
egth =- thermal noise from the generator resistance
ic = collector current at frequency of test
IE = d-c emitter current
Ie = d-c collector current due to d-c emitter current (does not in-
clude leo)
leo = d-c collector cutoff current
eJ>th = thermal noise from the base resistance, rb'
a = common-base current gain at frequency of test
1 1
Ze = emitter diode impedance = - =
ye ge
+.)W,--"
r
re = 25/IEma ohms, the real part of the emitter impedance at low

frequencies
Rg = source resistance
Both the emitter and collector junctions have shot-noise generators, but some
of the noise is due to the flow of the same charges and is. therefore, the same noise.
r =-
1
o 90
e = ./2 kTAfr
n 0
Figure 4
In other words, these two generators are strongly correlated. When we add the
total noise in the output we must -make an allowance for this by subtracting from
the collector noise that part of the noise which came directly from the emitter. If
the emitter shot-noise current generator is iesh, the part of the noise that reaches
the collector is -aiesh. The total shot noise at the collector junction is then:
iesh (total) = iesh - -aiesh.
To get the mean-squared value, both sides are squared and the correlation factor is
taken according to van der Zie1. 6 The result is:
(6)
Before we proceed with the noise-figure deriviation from Fig. 5, two assumptions
will be made:
1. All of the noise and signal transfer from the input of the transistor to the
output will be made through transistor action via the collector current generator,
1 a 1 ie. The signal transfer through re' and Ze is negligible, provided re' wee < < 1
or rb' < < 1Ze I·

2. The emitter impedance Ze can be approximated by its real part reo Again, this
is true for most regions of usefulness of the transistor.
r---,-------r---~~----~----_oc
Figure 5
NOISE FIGURE CALCULATION
A conventional definition of noise figure is:
Total mean-squared open-circuit noise voltage at transistor output
F = Total mean-squared open-circuit noise voltage at transistor output (7)
from Rg alone
The total noise current flowing in the emitter, ien, can be found by adding the
input loop noise voltages and dividing by the loop impedance.
. egth + eesh + ebth
len = (Rg + re + rb')
This current will appear in the output as I a lien, or as an open-circuit noise volt-
age, 1a I ienzc. The three noise voltages are squared separately since they are uncor-
related. Hence, the mean-squared open-circuit noise voltage is:
12(egth2 + eesh2 + ebth2)
1a 12·len2Zc2 -_ 1a 121 Zc(R
g + re + n')2 (8)
The mean-squared open-circuit noise voltage from the collector is:

eoc2 = icsh2 1Zc 12 (9)
Equations (8) and (9) may now be combined to yield the numerator of Eq. (7).
The denominator
1a 12 Izc 12egth2
(Rg + re + rb')2
is the thermal noise from the source as it appears in the output. Hence, from
Eq. (7)
Rearranging terms:
F = 1+ eesh 2 + ~th 2+ ·lcsh 2 (Rg + re + rb ')2
egth 2 egth 2 egth2 1a 12
The voltage and current generator now are replaced by their equivalents from
Eqs. (1), (4), and (6).
_ ~ rb' ~ (leo + Ie adc) (Rg + re + rb')2
F-l+2Rg+Rg+kT lal 2 +IE-2IE ao 2Rg (10)
This is not yet in a very useful form and, therefore, several more substitutions will
be made. The amplitude of alpha of a transistor frequency can be assumed to
behave like an RC network, thus:
(11)
where eYo is the low-frequency alpha (not the d-c a), f is the frequency of meas-
\1'2
urement, and fa is the frequency at which alpha has decreased to 2 au (i.e.,
0.707 eY o ).
From Eq. (11) we obtain:
(12)
1 a 12 = (£)2
1+ -
£a
FromEq. (3):
(3a)
Also, we know that:

(13 )
Combining Eqs. (10), (12), (3a), and (13):
Making the following assumptions:

leo leo
(a) adc + -1-::::::
E
1 + -I-
E
(b) adc:::::: ao
(c) leo «1
IE
Eq. (14) can be manipulated to give:
F = 1 + ~I rb' -I- iRg + re + rb')2 [_1_ -I- leo -+ (££_)2]

2Rg Rg 2aoRgre hFE IE ~ (14a)
where hFE is the common-emitter d-c current gain.
The noise-figure expression of Eq. (14a) can be used for frequencies above
the low-frequency corner in the plateau region and in the 6 db/octave region of
Fig. 1. The accuracy with which F can be predicted from other measured param-
eters is approximately 0.5 db at higher frequencies due principally to difficulties
in measuring fa. Parasitics such as lead inductance, header capacitance, ete., can
cause large errors in measurement of fa above 500 me. The noise figure itself may
be the most accurate index of fa. At low frequencies, generator-recombination
noise may cause errors in noise measurement when hFE < 10. Figure 6 shows a
normalized noise figure plot with the contributions of the various noise sources.
14
13
I II I
12
rb - Rg
r = 1/2 R
Total noise I
11
e
a = 1
g figure
I
10
0 I
ICO Upper noise j I/Collector
9 = .01
B
IC
h = 50
F
corner, fch )
.. rf
)
7
6
./ 3 b
./ 11 If
5
4
- - -I.&.,
1/ r I
3 b
1/
2
7' r..
~
leo
0
1.0 1.0
Fig. 6. Normalized transistor noise figure vs. frequency.
OPTIMUM NOISE SOURCE
If Eq. (14a) is examined, it will be noted that the collector term contains Rg in
both the numerator and denominator, while Rg appears in the denominator only
in the base and emitter terms. From this we conclude that by proper selection of
Rg the noise figure can be minimized. To determine this value, we differentiate
Eq. (14a), set the result equal to zero, and solve for Rg. The result Rg(OPtl is:
Rg(oPtl = [ (re + rb') 2+ 1

aore (2rb'
( f )2+ re) J1(2
leo (15 )
- +
hFE
- +-fa IE
As the frequency f approaches fa, the second term becomes small and the optimum
source approaches (rb' + re). At low frequencies where (f! fa) 2 is small, a tran-
sistor having a high d-c current gain will require a high source resistance Rg for
best noise performance.
The optimum noise source in the 1/f region cannot be determined from the type
of calculation described above.
TRANSISTOR NOISE FIGURE, MEDIUM AND LOW FREQUENCIES

In the low-frequency region, near and below the low-frequency noise corner,
the 1/f noise begins to dominate the noise figure. Unfortunately, there is no accurate
way to predict noise in this region from known accessible parameters, and we
must rely on empirical means for deriving a noise-figure expression. If the noise
figure is measured carefully from the plateau region where it begins to increase,
and well into the 1/f region, a curve like Fig. 7 will result.
3 db/octave slope
frequency
Figure 7
A tangent drawn to the low-frequency part of the curve will intersect the exten-
sion of the plateau noise figure at a point 3 db below the actual curve. The fre-
quency at this point is called the low-frequency noise corner feL. The noise figure
now can be defined for this region, using Fp , the plateau noise figure, and feL.
Flowfreq feL)
= FI' ( 1 + T (16)
The plateau noise figure FI' is the same as Eq. (14a) except that the (flf",) 2 term
is so small that it can be dropped. The low-frequency noise figure is then:
feL) [ rb' re (Rg + re + rb')2 ( 1 leo)]

Flow freq = ( 1 + -f- 1 + Rg + 2Rg + 2a oRgre hFE + 1; (17)
Equation (17) is not as useful as Eq. (14a) since feL must be obtained by experi-
ment. However, once the value for feL is obtained, it is usually fairly constant for
a given value of transistor when operated with a given generator resistance and
emitter current. Exceptions to this rule, interestingly enough, are sometimes
excessive noise figures from defective transistors. The defects may not be apparent
from any other measurement, but may show up after many hours of operation.
BIBLIOGRAPHY
1. Nielsen, E. G.: "Behavior of Noise Figures in Junction Transistors," Proc. IRE,

vol. 45, no. 7, p. 957, June, 1957.
2. van der Ziel, A: "Shot Noise in Junction Transistors and Diodes," Proc. IRE,
vol. 43, p. 1639, November, 1955.
3. van der Zie1, A, and A. G. T. Becking, "Theory of Junction Diode and Junction
Transistor Noise," Proc. IRE, vol. 46, p. 589, March, 1959.
4. van der Ziel, A: "Noise in Junction Transistors," Proc. IRE, vol. 46, p. 1019,
June, 1958.
5. Guggenbuehl, W., and M. J. O. Strutt, "Theory and Experiments on Shot
Noise in Semiconductor Junction Diodes and Transistors," Proc. IRE, vol. 45,
p. 839, June, 1957.
6. van der Ziel, A.: "Shot Noise in Transistors," Proc. IRE, vol. 48, p. 114, Jan-
uary, 1960.
7. Bess, 1.: "A Possible Mechanism of 1/f Noise Generation in Semiconductor
Filaments, Phys. Rev., 91-1569, 1953.
Centralized Automatic Testers (CATs) automatically test quantities and parameters,

and categorize thousands of transistors every hour without danger of human error.
8
Communications
Circuit Applications
This chapter offers forty tested circuit designs, categorized in the following order:
Low-level Low-frequency Amplifiers
RF Amplifiers
Oscillators, Mixers, and Converters
IF Amplifiers
Power Amplifiers
Transmitters
Although sufficient circuit information is presented to enable an experienced
engineer to reproduce the circuits, these designs are presented to stimulate creative
engineering, and not to serve as construction exercises.
LOW-LEVEL LOW-FREQUENCY AMPLIFIERS
High-impedance Low-noise Wideband Amplifier. This broadband amplifier

(Fig. 1) offers input impedances greater than 30 megohms with a noise figure of
less than 3 db over a wide range of generator resistances. Bootstrapping of the input
stage enhances the high input impedance of the TI 2N2498 field-effect transistor.
Miller capacitance effects are reduced, permitting an extremely wide bandwidth
with the use of a TI 2N930 in a grounded-base configuration following the input
stage. This amplifier will operate at very low frequencies without the need for
large-dimension capacitors.
Characteristics:
High input impedance > 30 megohms
Low noise figure < 3 db, 50 kilohms < Rg < 5 megohms
Wide frequency response = average 1 db BW, 1 cps to 500 kc at Rg = 100 kilohms
Stable voltage gain = 40 ±0.5 db from -55 to + 125 °c
101
II K 2.01lf
r-------~~----_4r+----,
~--~-'---+---'----'-----'---~~-r----'-----O+28v
150K
3.3K
1M 200K lOOK 3.6M
O.ljJf
INPUT 0---11-*-+---+41
10v
2.7M 20K 4711f + 20K 20K 2.0M 20M

6v
Fig. 1. High-impedance low-noise wideband amplifier.
Two-stage Low-level D-C Amplifier Using Complementary Pair. Both PNP

and NPN dual transistors in six-lead TO-5 cases (from the 2N2802-07 and
2N2639·44 series) are used in this circuit (Fig. 2). They provide extremely high
gain for greater stability and fewer stages. The circuit shown provides both low
drift and high common-mode rejection for either differential or single-ended
outputs.
IOOpf
10K O.22pf
6S0K
22K
ISOK
O.OOlpf
33K
+2Ov
O.OOlpf
ISOK
r OUTPUT
22K
....
10K
Q, -2N2642 39K
Q, -2N2643 6S0K
Q, -2"2S05
100pt
Fig. 2. Two-stage low-level doc amplifier using complementary pair.

Characteristics:
Common mode rejection ratio = 120 db
Equivalent input current drift = 0.1 na/oC
Equivalent input voltage drift = 3 f1-V JOC
Differential input impedance = 500 kilohms min
Low-frequency voltage gain = 68 db
Gain-bandwidth product = 5 mc
Low-level Low-noise Amplifier. This low-level high-gain amplifier (Fig. 3)
has a typical noise figure as low as 1 db. Advanced low-level planar technology of
Texas Instruments 2N929 and. 2N2586 transistors makes possible high gain at low
current levels, plus the extremely low leakage currents necessary for true low-noise
performance.
For high-impedance transducer applications, TI 2N930 and 2N2586 devices
permit typical I-db noise figure at emitter currents below 1 microampere and
generator resistance over 1 megohm. These special characteristics allow direct
coupling of low-level high-impedance sources ... advantages previously available
only with vacuum tubes and field-effect transistors. High gain at low levels plus
very thin regions in these units combine to offer low power consumption and high
radiation resistance, making the 2N930 and 2N2586 ideal for space applications.
910K 330K 680K 75K +22.5v

1.3 MEG.
C6
CI OUTPUT
cr--:1+
INPUT
2N929
820K I MEG.
820K C4 180K C7
-=
RESISTORS -ALL 1/2 watt, TI type CD 1/2 MR
CAPACITORS
CI, C3, C5, C6 - 2~f, TI type SCM 225FP02OC4
C2, C4 ---20~f, TI type SCM226BPOl5C4
C7 20pf, TI type SCM226GP035C4
Fig. 3. Typical low-level high-gain amplifier.

Characteristics:
Amplifier gain= 1000 = 60 db
Feedback = 4 db at Rg = 1 kilohm
NF = 0.4 db at Rg = 10 kilohms
BW (Rg = 50 kilohm) = 1.7 db at Rg = 100 kilohms
Input impedance = 340 kilohms at 1 kc
Output impedance = 12 kilohms at 1 kc
First stage biased at 10 fl-a
The 2N2586 is ideal for critical low-level low-noise applications such as the
input stage of amplifiers taking signals from high-impedance low-level transducers.
Previously, such applications required either complex transistor circuitry or vacuum
tubes.
Guaranteed minimum hFE at 1 fl-a is 80. The guaranteed minimum low-
temperature hFE is 40 at 10 fl-a and -55°C. Because of this high available gain,
simple amplifiers employing a minimum number of stages may be used.
The constant-noise contour curves for 2N2586 transistors (Fig. 4) enable you
to select bias currents (Ie) for different source resistances. Noise figures of less
than 2 db are easy to obtain for high-impedance transducers such as piezoelectric
strain gauges.
1m
I I
I I
'~d~ /
I /
lOOk
3db}
'"
E
.c:
II'~4db IfI
0
I
~ I
'"
.~
"'e 10k
/ ljdbl
.g
~
II f
'"
'"'"
<!) I II If
Vce5 VOLTS f - -
""
a::
I
Ik \. / III f =1 KC
"- ./
1000 200 400 600 800 1000 1200 1400
I c- Microamperes
Fig. 4. Constant noise contour curves, 2N2586.

.----.-------------.-----------.--------.----.----~-50v
400K 30K 400K

C4
+
Cs
62K
RESISTORS: All 1/2 watt, TI Type CD 1/2 MR C3, Cs, C7- 220uf-TI Type SCM 227HPOIOC4
CAPACITORS: C4, C5 -1.OJJf-TI Type SCM I05FP035C4
CI-O.lJlf CS-IOlJf-TI Type SCM I068P020C4
C2-5.6J1f - TI Type SCM 5658P035C4 Cg-6SJJf-TI Type SCM 686GPOl5C4
Fig. 5. 60-db low-noise amplifier.
60-db Low-noise Am,plifier. The circuit of Fig. 5 illustrates how Texas

Instruments 2N2500 silicon field-effect transistors are used to achieve low-noise
low-frequency operation. The 2N2497 -2500 series field-effect transistors give you
extremely low noise characteristics -- as low as 5 db at 10 cycles. They are ideal
for such low-frequency equipment as null-detection apparatus, medical research
equipment, oscillographic and magnetic tape recorders, oscilloscopes, and all types
of low-level transducers.
This circuit gives you a maximum voltage gain of 60 db ± 0.5 db from -55 to
125 DC with built-in gain adjustment. You also get good low-frequency response
and stable circuit operation.
Characteristics:
NF =1.5 db at Rg = 10 kilohms
1.2 db at Rg = 50 kilohms
1 db at Rg = 100 kilohms
1 db at Rg =1 megohm
High Input Impedance Amplifier. You can get input impedances greater
than 1 megohm for your high-impedance transducer applications (Fig. 6) by
using the TI 2N930 and 2N2411. Complementary TI 2N930 (NPN) and 2N2411
(PNP) transistors, both in the TO-I8 case, also allow you single power supply
design for direct coupling of low-level high-impedance sources. You get greater
stability, reliability, and economy because you need fewer power supplies and
fewer circuit elements.
-28v
130 K
301la-
200K 1001la-
2.2ma---." ....... ./
01 02
15v
Rg=IMEGOHM 1.66K
330K .......-.--------''''''''-------.-13.3 v
- 200llf
1N~9
eg + 15v
(
Shunti ng effect of 81AS NETWORK
{ 1
180 n eliminated by effect of positive feedback loop)
-=2.3ma II MEG lOOK 68~f

. + -
6v
Maximum power out without clipping =1 mw into 3.3K
ck: output bias voltage stable within 6% from
-25°C to +125°C 1-5pf
01 ac hfe =34
02 ac hfe == 400
All resistors 1%
Fig. 6. High input impedance amplifier.
Characteristics:
Input impedance > 1 megohm
Wide frequency response=Av 1 db Bandwidth 100 cps to 230 kc at R g =l megohm
Low noise voltage = 1.2 fJ-v (rms), Rg = 0
Stable voltage gain = 20 db ±0.05 db from -25 to +125°C
Low power consumption = 65.5 mw
Small loads possible = down to 3.3 kilohms
Power gain = 46 db
(Also see Figs. 7 and 8)
Wideband Unity-gain Amplifier. This circuit employs a 2N2386 silicon
fieId-effect transistor in a broadband unity-gain amplifier having an input impedance
of about 100 megohms (Fig. 9). Frequency responses for various values of genera-
tor resistance are shown in Fig. 10.
Other designs may be used to extend response to d-c and give an input im-
pedance in the order of 1000 megohms.
Rg=O
20 Rg=mK I0.0
19 B.9
u
IB 7.9 i%
w
~17 7.0 z~
~ 16
<!)
6.3 z
RG =I meg
~ 15
«
~ 14
>
u
«
13
-'" ~
, 5.6 ~
w
5.0 <.!)
4.4
~
~
12 ~
Rg \ 3.9 ~
Ir--
e~o 3.5
10 ~ 19o . eo
m=ejO
IemD=25°C
AC VOLTAGE GAIN VS FREQUENCY
II II 1111 IIII
3.1
100 500 IK 10K 100 K 300K 500K

FREQUENCY (CYCLES PER SECOND)
Fig. 7. A-C voltage gain vs. frequency.
150
_140 II 1111 I
on
EI30
il20 ~R9~O
~IIO
freq 3db 'Ibcps-IO KC
~ 100 r--
temp =25°C
~ 90 r--
w
en BO
ith R =0 en=1.2uv rms
C5
z 70 II
I-
=> 60
a..
z 50 /
I- 40
)
z
w
..J 30
NOISE VOLTAGE VS. GEN RATOR RESISTANCE /
::; 20
s0
w 10
100 IK 10K
-
GENERATOR RESISTANCE (OHMS)
lOOK I meg
Fig. 8. Noise voltage vs. generator resistance.

18v
10K
O.11Jf
0-1 2N929
INPUT
IOJJf
15uh
10v f-<>
20v
1K
OUTPUT
Fig. 9. High input impedance unity-gain amplifier employing 2N2386 FET.
5
TA = 25°C
k[\'\
V
'\ ~KO\ \
" 1\ 1\ 50KO
-10
Rg ~OM~ IMO \ lOOK 0
0.01 0.1 1.0 10 100 1000 10,000

FREQUENCY, kc
Fig. 10. Amplifier voltage gain vs. frequency for circuit of Fig. 9.
RF AMPLIFIERS
60- to 90-mc Voltage-tuned Amplifier. The close tolerance of TI's silicon
XA585 voltage-variable capacitance diodes, together with a uniform slope and
high Q, make the circuit shown in Fig. 11 extremely stable and give excellent
tracking.
The ten new diodes from TI, typed XA580 through XA589, give capacitance
ranges from 22 pf through 47 pf (at -4v), ±15% capacitance range, Q of 100 for
.five of the ten types, and guaranteed minimum capacitance ratios of 3.5 and 4.5
to I.
Used in this two-stage voltage-tuned amplifier, the circuit gives more than 40-db
gain from 60 to 90 mc with a 50-ohm source and 50-ohm load. The untuned input
allows constant source impedance over the tunable frequency range.
2N2865 .9-7
5pf
~~""""''''-~~''''----i ~
1.5K
50n
Load
-30v------~----r-----------~~*
120011 91011 ~
IN757
(9.1v)
IN3030 * c=1000pf feed through
(27v) Fourth lead grounded on transistors
Fig. 11. 60- to 90-mc amplifier.
250-mc RF Amplifier. If you design for the military VHF band (216 to
260 mc), n's silicon epitaxial planar 2N2865 offers an answer to your cost prob-
lems. The simple RF amplifier shown in Fig. 12 is built around the 2N2865 and
demonstrates its capabilities; the amplifier gives a 12.5-db gain and a noise figure
of only 5 db at 250 me.
Since the TI 2N2865 is unconditionally stable in the common-emitter connec-
tion at 250 mc, it makes a highly stable amplifier. Input parameters of the 2N2865
are so consistent that a variable element is not needed in the input network; the
35-pf and 2.5-pf capacitors are ribbon types. The 300-pf capacitor Cl is an
undipped ceramic type whose sides are soldered directly to the BNC connector
and to Ll; this effectively eliminates lead length and allows larger capacitance
values without self-resonance. Insertion loss of only 0.4 db was obtained by using
copper-strip inductors to give high values of unloaded-Q.
50-n
Source
2.5~PI Lood
50-n
L,
0.035)1h
1000 pI
0.68)1h
7/16"-r.l.i
ILl I
-R L,;::
-t
3/4"
+10v
5/16"1 (Sell, = 4 mol
(, = 300-pl undipped ceramic capacilor

Hypos< copocilolS = Aeroyox Hi-Q EF4, 1000 pI, 1000 y
(, = 1.8-13 pi, sel 01 7 pI
L, = 0.014 ph: copper strip, 1/32" x 5/16", bent to 7/16" diam. Q, = 200
L, = 0.035 ph: copper strip, 1/32" x 3/8", bent 10 3/4" diam. Q, = 300
Fig. 12. 250-mc RF amplifier.

50n 2N2415 2N2415

"" "
l-:--..-lJI
SOURCE 82 20 L1 110 20 L2 110 n
H 1000
~ 150
LOAD·
1.8.9.44
22K 2.2K 22K 2.2K
1000 LJ =1%" of lI" DIA. BRASS STOCK

1000 ~ TAPPED AT %" FROM GROUND
L2=HI"of %" DIA. BRASS STOCK
TAPPED AT II" FROM GROUND
ALL CAPACITORS ARE IN pf
Vee = -12v. ALL RESISTORS ARE IN OHMS
II WATT
Fig. 13. 450-mc RF amplifier.
450-mc RF Amplifier. Figure 13 is a two-stage synchronously-tuned 450-mc

RF amplifier using 2N2415 high-frequency low-noise transistors. This frequency
is in the band allocated to aeronautical-navigational equipment (420-450 mc),
and is also used for some telemetry systems. Tank circuits are contained in sections
I" deep by I" wide by 2" long. Inductors are brass rods %" in diameter tapped
as indicated. All brass parts are silver-plated to a thickness greater than 0.5 mils
to minimize losses.
The common-base configuration is used because it allows slightly more power
gain than a common-emitter orientation at this frequency. The 2N2415, a diffused-
base mesa transistor, is unconditionally stable at 450 mc, so that no source or load
termination can be found that will cause oscillation.
Characteristics:
Two-stage performance: PG = 20 db
NF = 4.5 db
BW = 10 me
UHF TV Tuner. Figure 14 shows a low-noise highly efficient UHF tuner using
2N2415 transistors. Full design data is available to interested manufacturers.
The circuit was designed for use as a UHF television tuner, but is adaptable
to other uses. Input is tunable from 470 to 890 me. Output is 45 me. Power
requirement is only 18 rna at 12 volts. Mixer-emitter current is 0.1 rna.
On test, the tuner indicated a typical noise figure of 7 to 9 db, compared with
10 or 12 db for comparable vacuum-tube circuits. Gain was 3 to 9 db - a sub-
stantial increase over the 6-db loss usually obtained from tube circuits in the 470-
to 890-mc band.
Stability was excellent. At 935 mc, temperature fluctuations from 25 to 50°C
caused the local oscillator frequency to vary only 600 kc, and supply-voltage
changes of 10% caused frequency variances of only 400 ke.
',...--------------------------1
:
FREQUENCY Ribp Robp Riep
! 470MC 85n 500n 180n
i
i 890MC 120 n 2000 40 n
(ALL CAPACITORS IN PICOFARAOS)
I:
50n
INPUT
T] =30 TURNS OF #35 WIRE ON

W' 00 FORM, WITH 45 Me FERRITE
10K SLUG TAPPED APPROXIMATELY !O
TURNS FROM COLO END.
L--...:..:.:...---''''-_ _ _ _ _ _......--<>+ 12V
Fig. 14. UHF TV tuner.
The TI 2N2415 transistors in this circuit have an f max of 3 Gc, the highest in
the industry. Transistor noise figures through the UHF range are the lowest avail-
able today. A typical noise figure at 200 mc is 2.4 db. Collector-base time constant
is unusually low - three picoseconds. Ruggedness of construction is confirmed by
100-percent centrifuge testing.
500-mc Amplifier. The TI 2N3570 provides high gain at 500 mc. Figure 15
shows how it may be used in a common-emitter single-stage amplifier. The small-
signal circuit provides 17 -db gain at a low 3-db noise figure (with Rg = 50 ohms).
It has an input impedance of 51 ohms and an output impedance of 1300 ohms in
parallel with 1.8 pf. Neutralizing voltage is obtained from the coupling loop L3
which is a silver-plated strip of beryllium copper running parallel to L2.
NEUTRALIZATION
2.2pt ADJUST
2N3570 c! ~L3 3-35pf
LI
CI
1.5-20pf
C2
1.5-IOpt
----, I C5
L2
1.5-IOpt
I
I
RFC 1200 I RFC
RI
O.l5~h .n I O.l5~h
I
IOOOpt I
I
I
C4 I
-VEE +Vcc
LI=SILVER-PLATED BRASS ROD-I 9116"LENGTH,1I4 M DIA.
L~SILVER-PLATED BRASS ROD-2 1/8" LENGTH,1/4"DIA.
Fig. Hi. SOO-mc amplifier.

2N2410
45·380pf
650pf
ARCO 315 33JJh +25V

OR EQUIV.
1.5K 1400·3000pf.
O.02JJf 0.04Jf
+25V
Fig. 16. 20-mc power oscillator using 2N2410.
OSCILLATORS, MIXERS, AND CONVERTERS

20-mc Power Oscillator. Figure 16 shows a 2N2410 in a Colpitts-type
common-base oscillator circuit. Power output is about 500 mw to a 50-ohm load.
The transistor dissipates about 750 mw at this output.
30- to 5.5-mc Mixer. This circuit mixes a 30-mc input and a 35.5-mc oscilla-
tor output to give a 5.5-mc IF signal (Fig. 17). The following shows the IF
voltage output vs. the 30-mc input voltage, with an oscillator signal of 630 mv:
VOUT (V2 = 630 mv)
100 p,v 3.5 mv TA = 25°C
1 mv 11.5 mv
10 mv 100 mv
100 mw 880 mv
The 1000-pf capacitor eliminates most of the 30- and 35.5-mc signals from the
output.
I 2N2188
l
VI
30 me 2500pf Your
INPUT t-=~lt----t'.J 200 0
(500) LOAD
2500pf
Tl
Vz NI - 21 turns #40 wire
N2 - 4 turns #40 wire
35.5 me BIFILAR WOUND ON
OSCILLATOR EL RAD COIL FORM
SIGNAL WITH POWDERED IRON SLUG
(500 ) T2
N3 - 4 turns
N4 - IV, turns
AIR DUX #516 (OR EQUIVALENT)
Fig. 17. 30- to 5.5-mc mixer.

Vee = -15v
500
LOAD
~------~--~~4~.8~
O.022.uh
300pf 470pf
Fig. 18. 200-mc oscillator employing 2N 1141.
200-mc Oscillator. This exceptionally stable oscillator (Fig. 18) varies less
than 2 mc in frequency and 1.5 mw in power output over a temperature range of
+ 25 to + 80°C. Nominal power output is 22.5 mw at 25°C.
SOO-mc Oscillator. The Colpitts-type oscillator of Fig. 19 employs the high-
frequency low-noise 2N2415 transistor. Tl is a lY2" length of 'VB" brass rod with
the ouput tap 1;4" from the bottom. Frequency variation is less than 1.5 mc as bias
is varied from 6 to 9 volts. Frequency varies less than 3.0 mc with temperature
variations from +25 to +75°C. Typical output to the 50-ohm load is 10 mw.
450- to 3D-me Mixer. This straightforward design (Fig. 20) employs the
low-noise high-frequency 2N2415 transistor. Figure 21 shows power gain and noise
figure of the 2N2415 at various levels of emitter current.
With a local oscillator feeding one milliwatt, conversion gain was about 15 db
and noise figure was about 10 db. When an RF amplifier using a 2N2415 preceded
the mixer, combined power gain was 25 db and noise figure was about 6 db.
1.5K
1
5.0pf
00
LOAD
Fig. 19. 500-mc oscillator using 2N2415.

-Vee
1000pf
6.8uh (high Q)
450me
INPUT
(50n)
480 me
2.
1.5·9pf1
o.00Luf 50n
LOAD
LOCAL
OSC
50n
T1 jI," DIA. x 1W' BRASS ROD

-
TAPPED AT 0.75" and 0.375"
FROM GROUND
T2 - jI," DIA. X 1Y," BRASS ROD
TAPPED 0 .375" FROM BOTTOM
Ll = 18 TURNS #30 WIRE ON en COIL
FORM # PL562C4V200630 CLOSE
WOUND FROM BOTTOM. SLUG GROUNDED
Fig. 20. 450- to 30-me mixer using 2N2415.
16
14
~
~
...- -r-:l
/
L-- ~
-""""'1'--..... I--....
12 2N2415
//
/ ' 450-30mc MIXER
-~
~. Vee = -6 volts; T. = 25"C
10 LOCAL OSC. INPUT = Imw
NF -~ BANDWIDTH = 2mc
,,~
0
.5 1.0 1.5 2.0 2.5 3.0
EMITTER CURRENT (ma)
Fig. 21. Power gain and noise figure vs. emitter current, 2N2415.
250- to 60-mc Converter. The circuit of Fig. 22 consists of an RF amplifier,

a m.ixer, a separate buffered local oscillator, and a two-stage IF amplifier - all
using the 2N2865 transistor. Separate chassis were used to provide flexibility and
utility. There is no tendency to oscillate with the RF amplifier disconnected.
The RF amplifier uses single-tuned input and output networks and provides a
power gain of approximately 12 db, NF of 4.5 db (Rg = 50 ohms), and a band-
width of 13 me.
The mixer employs separate injection with the local oscillator injected into the
emitter. A single-tuned network matches the 50-ohm cable to the base. A double-
tuned network is used at the output to transform down to the 50-ohm cable
1 - - -,- I- - ,- - - - .. - - - I
I 250 me RF I T2 1
I " \ I
500 ~
I AMPLI FIER:
I
I
CI C2
~~
I
2N2865',
~~6:
J2' *.3
iMIXfR '\,
2N2865'
\C~'3C~'5
C, \
:
J4:
:
(6)"",-, +( I
' "m:~500
R'2IN;-N"'
P
I ::
II
I
I
C
C:31
I
LOAD
GEN. C401 II I R'3 :

C9 I
I C Ls L7 I /I I 1
I L, I 10 I
Oft I -}fe - ---I II" II I
~.
I C'8 ~", I
I
~ r-_N~ _
10,)
~ f- 1
10,) 1 C 41 - - -.l
lit VEE
9
0" 1310m-;;--- -
I LO{:AL OSc. Vee
n
~ I
BIAS CONDITIONS Vee = 10 v
o
3
3
n
I
n I TOTAL 'E~ 30 ma 3
o c
::::I I ::::II
< I ;;'
It D
~
It tI '9 i'
:"' ::::II
I VI
I :c
1 D
::::II
I a..
IT
1_- g
~
Vee VEE
--
UI
connecting the mixer and the IF amplifier. Local oscillator injection was set at
approximately 60 mv. Conversion power gain was approximately 11 db.
The 31O-mc local oscillator is a Colpitts-type which feeds a common-emitter
buffer. Output is connected through a matching nerwork to the emitter of the
mixer stage.
The 60-mc IF amplifier consists of rwo neutralized double-tuned stages with
approximately 45-db power gain and an effective bandwidth of 10 mc.
Typical Performance:
Power gain = 69 db
Bandwidth = 5 mc (-3 db)
Noise figure = 7 db (R g = 50 ohms)
Sensitivity = 3.5 JLV
Image rejection > 40 db
4S0- to lOS-me Converter Using 2N2996. The RF amplifier in the con-
verter circuit of Fig. 23 is designed for low-noise operation at 450 mc. The
2N2996 in the common-base configuration has a typical power gain at 450 mc of
13 db, with a 5.9-db noise figure. Input is matched to the 50-ohm source and the
output is coupled from a tap on Tl to the mixer input. Ra is used to obtain the
desired stability factors for Ql and Q2 for interchangeability considerations.
10 pf R, 1.5k
I. 8 - 13 pf R2 3.0 k
1.8 -13pf R3 3.0 k
1000 pf (See C' below) R. 51 Q
9 - 35 pf R5 1.5k
3~ ~ 3.0 k
9 - 35 pf R7 3.0 k
10 pf Ra 3.0 k
9 - 35 pf Rg 3.0 k
3.0 pf R,O 1.5k
9 - 35 pf R" 3.0 k
10 pf R'2 3.0 k
9 - 35 pf R'3 1.5k
3 pf R,• 1.5k
9 - 35 pf R'5 3.0 k
10 pf R'6 3.0 k
2.5pf R'7 1.5k
0.9-7pf Ria 3.0 k
0.9-7pf Rig 3.0 k
220 pf R20 510 Q
110 pf
1.8 - 13 pf
1000 pf (Aerovox Hi-Q EF4 by-pass cop.)
T, 1/2 turn of 1/4" x 1/32" copper strip, topped approx. 1/3 up from ground
LI 2 turns II 20 Buss wire on 1/2 watt-l megohm resistor
L2 0.15 ~h RFC
L3 0.33 ~h RFC
L4r5t7, e, 10,11 - 2 1/2 turns 1130 wire on Cambion LS 9 coil form {adjusted to resonate with
31 pf ot 105 mc}
L6 3.3 ~h RFC
Lg 3.3 ph RFC
L'2 0.15~hRFC
LI3 2 turns #20 Buss wire on 1/2-watt - 1 megohm resistor
L'4 0.33 ph RFC
._
II
~F~~!:li..0,:: _ - ---r-I ----Mixer
- - -- -~- -- _l.:.t.!! Amplifier
II - - - - - - - .I - - - 2nd
----
IF Amp IOfo
-I-ler- - - .
II I , I : - - - - - - - - T50
ohm~~
I C, Q I Q 61 C 14 C16 1Q
50
, I ~ C6
L5
C
S
5 I
\,~
Wi\
OUT,
...
~O
I
I C
-
I
-I -
I
-
I RS
I
I
I 2 II : II II I
W
Col I L I !... -' II
....
III
..
9
-
o
o
III
~
":::Io
< n
~
CD
~
CD
'"' 3
C c
III ::s
:i"
ca
;;;.
a
w ~
Z ci"
::s
W
-0 VI
-0
!'" :z:
a
::s
a.
a-
S
~
--
.....
The 450-mc RF signal is mixed with a 345-mc oscillator signal to produce the
105-mc IF signal. Impedance at the base of the mixer is made as low as possible for
maximum performance. A double-tuned network in the output attenuates all
undesired signals. The 2N2996 is an excellent low-noise VHF/UHF mixer.
The stable 345-mc Colpitts oscillator is capable of 5-mw output power; how-
ever, less than 1 mw is required by the buffer stage for good mixing action. The
buffer helps stabilize the oscillator by providing a relatively constant load, plus
isolation from the RF signals. Buffer output is divided down for injection to the
mixer with the proper signal level at a low impedance.
The 105-mc IF signal produced by the mixer is coupled to the first IF amplifier.
This is a common-emitter amplifier with a stable power gain of 20 db and a noise
figure of 2.5 db at 105 me. The Output circuit is another double-tuned network to
further attenuate undesired signals. The second IF amplifier is identical to the
first with the output coupled to a 50-ohm load.
Power gain = 63 db
Noise figure = 7 db
3-db bandwidth = 6.5 mc
30-db bandwidth = 20 mc
Power = +12 vat 42 rna
There are no signals above the noise level at the output with the absence of an
input signal.
The 2N2998 transistor can replace the 2N2996 in the RF amplifier to provide
a 3-db increase in power gain with an overall noise figure of only 3 db.
450- to 105-mc Converter Using 2N2415. This converter (Fig. 24) con-
sists of a two-stage amplifier, a 450- to 105-mc mixer stage, and a 345-mc local
oscillator. The two-stage RF amplifier uses the TI 2N2415, and has a typical power
gain of 20 db, NF of 4.5 db, and a bandwidth of 10 mc. The mixer uses a TI
2N2415 and has a conversion gain of approximately 12 db. The local oscillator
in this circuit uses a TI 2N1407.
The overall noise figure of this frequency converter is 5.0 db, and the circuit
delivers a conversion gain from antenna terminals to IF strip terminals of 32 db.
IF AMPLIFIERS
5.5-mc IF Amplifier. Three 2N2189 germanium Dalmesa transistors are used
in this high-gain low-noise 5.5-mc IF strip (Fig. 25).
Power gain = 62 db
= 4 db
Noise figure
Bandwidth = 0.18 mc
Response curve is shown in Fig. 26.
RF
INPUT
'f ~1.F0
2N2415 2N2415 2N2415
.. 82
1.8-9.4
20K
4.7K 22K 22K 4.7K 22K 22K
22K -12V
~ ~
1000
4.7K
I
1000
1000
-12V -12V
LJ=II/4" of 3/S"DIA. BRASS STOCK
TAPPED AT 3/4" FROM GROUND
L2=11/4" of 3/S"DIA. BRASS STOCK
TAPPED AT 1/2" FROM GROUND
L3=1 TURN No. 14 WIRE 1/4" I.D.
TAPPED AT I/S TURN FROM GROUND IK
FOR OPTIMUM CONVERSION GAIN
TI=4T No.22 WIRE PRIMARY
IT No. 22 WIRE SECONDARY EJOO
ALL CAPACITORS ARE IN pf -12V
Fig. 24. 450- to lOS-me converter using 2N2415.
'5j
DESIGN DATA h 1,
N,
and T]
= 30 TURNS ALL RESISTORS ARE 'hW 10% TOLERANCE
N,
..L N, & N,
N]
= 6 TURNS
=3 TURNS
BIFllAR·UNIVERSAL WOUND USING ",40 GRIPE1E
ALL CAPACITANCE VALUES LESS THAN LO ARE IN pI.
ALL CAPACITANCE VALUES GREATER THAN 1.0 ARE IN pI.
'THIS RESISTOR REQUIRED TO GIVE CORRECT
WIRE ON AN E, RAD TRANSFORMER FORM 30B801. UNLOADED Q
Fig. 25. 5.5-me IF amplifier.

REF.
o
f ~
-4
1 \
~
-8 \
\
I \
I
I 3-STAGE \
I 2N2189 \
5.5mc AMPLIFIER
-20 I \
/ r\
-24 ,V \,
5.1 5.3 5.5 5.7 5.9
FREQUENCY (me)
Fig. 26. Response eurve for 5.5-me IF strip.
300mc IF Amplifier Using 2N2410. This circuit (Fig. 27) employs a 2N2410
epitaxial planar silicon transistor. Because of its large signal handling capability it
may be used as the final stage of IF strips. Typical power gain at the indicated bias
point is 16 db.
50 (1
LOAD
Fig. 27. 3D-me amplifier using 2N2410.

I
\ 2N2188
NI t 2300 pI
PL=200Cl
TI
Nl - 10 t ~30 wife
N2 - 3 t ",,3D wire
BIFILAR WOUNO ON
CTC PLS 62C4L120063 0
COIL FORM
Fig. 28. 30-mc IF amplifier using 2N2188.
30-mc IF Amplifier Using 2N2188. The 2N2188 Dalmesa transistor is used

in this circuit (Fig. 28), which includes an L-section to give an Rg of 350 ohms
from a 50-ohm source. Typical performance is 13-db power gain, 4-db noise figure,
and 5-mc bandwidth. Noise characteristics of the 2N2188 are shown in Fig. 29.
r---~~~r-------~---------+---------+------ R.=IOOO
I
R. = 3500
2.5 3.0
Fig. 29. Noise figure vs. emitter current, 2N2188 series.

30-mc Double-tuned Amplifier. The amplifier of Fig. 30 demonstrates the
gain and noise capabilities of the 2N2996 at 30 me. Good stability is achieved
through proper loading, even though the 2N2996 is potentially unstable at this
en
""~5~6
::;; ""
110-;;-"";
rt') Q co II
a:: II a: v
~LO":'~
et: ct:: a:::
... ... ... 0
-v
a:: a:: a:: a::
<.00')
-
!:2
a:
U"l
...J
"<I"
...J
U""
u..
a:
""
a:
"";i. ..c:
U"l ..c:
~
";;.. 6 .....=l.~
0
U"l
> """ "r<> ~ """
0 "NO
""
+ U
"<I" N
a: .....
u ...J
I
6 ~
u ~
u
~ u..
u
<0 u a: ...J
a:
u
u..
a:
0-
o
<X>
T
en
"r<>
~
en
'i_
- 0-
C\J (J.. N
t5
1I~Q2r--~
g ~~
rt") 0 I U ... u ..
a LO en LO ex>
I II II U U
--NrO..t-
CJuUuu
Fig. 30. 30-mc double-tuned amplifier.

3N35
1.5-7 pf
16K
1 82001
+2DV
BIAS POINT: Vee = +20V

IE = -1.3ma
182 = -100)la
TYPICAL INTERSTAGE TRANSFORMER:
Ll = L36)1h
L2 = 0.24)1h
k '=" 0.43
Fig. 31. 60-mc tetrode IF amplifier.
frequency. Even with the necessary loading, the amplifier has a good gain figure of
21-db gain per stage.
Power gain :::::: 63 db
Bandwidth = 3 mc
Noise figure = 2.3 db
60-mc Tetrode IF Amplifier. The 3N35 grown-junction tetrode transistor
offers several advantages for 60-mc use (see Fig. 31). AGe characteristics are
excellent and power requirements are much lower than for other silicon transistors
at this frequency. Typical stage gains of 12 db are obtainable.
60-mc IF Amplifier Using 2N743. This circuit (Fig. 32) takes advantage of
the excellent gain and noise figure capabilities of 2N743 silicon epitaxial tran-
sistors. Alignment is simplified because of the unconditional stability of the 2N743
at this frequency, and the heavy mismatch. Higher gains-up to 16 db per stage
-are possible with a conjugate match at the output.
500 LOAD
~----~--~~82~
O.OOllJf
~o
L2
J-.s6~kcE +Vcc
C1 - ARCO 465 (50·380 pI)
II - 5.6 uh RFC
l, = 0.04 uh; 1\\ TURNS. lIo" ID
,. 20 WIRE SPACED
APPROX. 2 WIRE DIA·s.
BIAS POINT: Ve• = 5v
Ie = 5ma
Fig. 32. 60-mc IF amplifier using 2N743.

500
L2 C6 LOAD
~
VEa (SEE FIG. 34)
C,=5.3 - 102 pf L, 3T # 14 WIRE II" DIA; = 0.25 uh
C,=3.7 - 52 pf L, 4T #610 AIR DUX (OR EQUIV.); = 0.35 uh
C,=O.OI uf TAPPED APPROX. I TURN UP FROM BOTTOM
C,=3.7 - 52 pf C, IS ADJUSTED TO GIVE DESIRED VALUE OF R,
C5'O.01 uf '4th LEAD GROUNDED. R, = IK t;, W
CtO.Oluf BIAS POINT: -6V. IE (SEE FIG. 34)
Fig. 33. 70-mc low-noise amplifier.

Power gain = 13 db
Bandwidth = 20 mc
70-mc Low-noise IF Amplifier. Dalcom 2N2415 transistors make possible
extremely low noise IF strip circuitry in the 70-mc region. A typical amplifier stage
design is shown in Fig. 33; Fig. 34 displays the noise figures available at various
emitter currents and generator resistances.
5.0
~~/
4.0
':/;/
~
I. ",'1 f-
= 075m\
,
IE IiV
2.5ma ,/
~
:2.
3.0 - - 1.5ma"
....
co::
=>
c.l:I
~~ ~ ~~
\)\;..
~~ ;1
..:::
....!12 -....;:
? ./
V
z: 2.0
Q
.............. .--7
*Rg is shown as a real quantity.
The optimum generator impedance
was adjusted for minimum NF
1.0 fo = 70me TA = 25 0 C- with Cz. This makes the generator
II VeE = -6v
I 2N2415
look slightly reactive.
TYPICAL PfWER GAIN 24 db @ 2,a

o I I I I I
60 100 200 400 1000
GENERATOR RESISTANCE, OHMS·
Fig. 34. Noise figure vs. generator resistance, 2N2415 at 70 mc.

70-mc Neutralized Amplifier. Chief design objective for the circuit in Fig. 35
was to achieve as much power gain as possible using only a single stage and main-
taining good circuit stability.
(Conditions: VeR = -6v, Ie = -2 rna)
Power gain = 27 db
Noise figure < 3 db
10S-mc IF Amplifier. The circUlt In Fig. 36 demonstrates that the 2N2996
still has excellent gain and noise capabilities at 105 me. Although the 2N2996 is
potentially unstable at 105 mc, proper loading yields good stability and still per-
mits the circuit to achieve 19 db of gain per stage.
Power gain = 38 db
Bandwidth = 8 mc
50n
Source
+ - Vcc
QI=2N2996 Cn=3.9pf
C"C2 =6.0-140pf RI= 2.7 k
C3.C4 =.OOluf R2= 1.0 k
C5=2-30pf LI=0.06uh
C6= 10pf TI 5 Turns No. 516 air dux tapped 4 T from collector
Fig. 35. 70-mc neutralized amplifier.

~+-~L~5v-C~12~ ~~ __ ____ ~C~13~LAS~~

l' -12V
l'
01,2 =2N2996 CI=250pf
LI,L2,L3,L4=2112 TURNS#30 WIRE ON CAMBION C2,C7, CI2.CI3. CWIOOOpf
LS9 COIL FORM (ADJUSTED TO RESONATE WITH 31pf AT I05mc) C3,C5,Ca.CIO=9-35 pf
L5,LS = 3.311h C4.C9= 1.3-5.4pf
L7= O.07I1h CS=1.5-20pf
RI,R2,R4,R5= 3K Cn=IOpf
R3,R6=1.5K Cl5 =9-180pf
CIS,CI7 =IOOOpf
Fig. 36. lOS-me IF amplifier.
SOO-mc Staggered-tuned Amplifier. The amplifier of Fig. 37 is a two-stage

slightly staggered type that offers excellent stability. This circuit will not oscillate
with either an open circuit load or source. Midband gain is 21 db, and power
requirement is 7 rna at 15 v.
POWER AMPLIFIERS
70-watt Audio Amplifier. Figure 38 shows a 70-watt audio amplifier output
stage using the advanced TI3031 germanium alloy power transistor, which gives
you the industry's highest power-to-cost ratio in a JEDEC TO-3 package. The
output is capacitor coupled and does not require transformer coupling to the
speaker coil. Thus, there is a significant cost reduction in output coupling to com-
plement the low cost of the TI3031 transistors.
Characteristics: 90 watts at 55°C case temperature, 7-amp collector current,
45-120 volts BVCBO, minimum hFE of 40 at 3 amps.
Other consumer and industrial applications include electronic organs, doc con-
verters, series regulators for power supplies, light flashers, and tape recorder bias
oscillators.
HOpf
BNG (0lf-rl"T"""""""i I--4I--H

HOpf
2N3570
0.001
E-:l
22K BNG
4700
0. 001 1
22K 4.7K 540
0.001 I-- 90mc---l
)~
4.7K
Idb 1 - -~
15V
1- - 3db
_1
Fig. 37. SOO-me staggered-tuned amplifier.
r------..-----O-74v
1500
lOw
•
O.4m
0.560 3w
1/2w
150n G
lOw
TI3031
40
• 0.560
112w
Fig. 38. 70-watt audio amplifier stage using T13031.

AIR DUX
S04
AIR DUX AIR DUX
504 1010
•
50n ro.l lJf
,
AIR DUX
1010
I 4 TO
son
LOAD
SOURCE ~
_ 92 TURNS # 18 WIRE ON
1" PLEXIGLASS FORMS =
64~h -
r!OJJf
i;5V
VARIABLE CAPACITORS (4)
ARCO 315, 1400·3000 pi
fREQ = 4.7 me
P'N = 2W
Po DRIVER = 13W
Po AMP = 34W DRIVER = 2A
DC P'N = 6A @ 20VDC (TOTAL) fiNAL = 4A + Vee
Fig. 39. 4.7-mc two-stage drive and amplifier.
4.7-mc Driver and Amplifier. This two-stage driver and amplifier (Fig. 39)
employs two 2N1937's in a common-emitter circuit. Figure 40 shows character-
istics of the 2N1937 with VeE of 20 volts.
50-mc Power Amplifier. Figure 41 is the schematic of an amplifier stage used
to test the characteristics of the 2N2410 for power amplifier service. Values shown
are for 50-me common-base operation.
Operating characteristics of the 2N2410 transistor are shown in Figs. 42 through
45.
ALL DATA TAKEN WITH TRANSISTOR MOUNTED ON DELBERT

BLINN # 113 BLACK PAINTED HEAT SINK IN FREE AIR
16db 14~b 2N1937 POWER AMPLIfiER
COMMON EMITTER-
/ /1 12db VCE = 20 volts
/
P- O.~~ Imc
10d~
L ~ ,/.
;;
,"-
;3mc__
1', b ... - -8db
--
I' ~ ...... ~ ~- ~~S 6db
I"~ ~ F'""' ~-
2 3 4 5
POWER IN (WAITS)
Fig. 40. Common-emitter amplifier characteristics, 2N1937.

Fig. 41. 50-mc power amplifier using 2N2410.
1.0 2N24lO 12db

r-- COMMON
EMlnER
,,'
....
-. ~
10db
@ , ---
"
.S f---- Vee =20v. I ~\)~y. ....
~I (SMALL HEAT SINK USED)" .........: .... Sdb '" ~
.6 ....
~
= " L .... /'
-- ~-
l\)~C
--
i"""
~ .4 " ....~
~
-- --
"
...~ ,,"
.2
"--
~
-.---
-....:::-' ~\)mc
'1
4db -
20 40 60 so 100
POWER IN -(MILLIWATTS)
1.2 ~ 2N24101 I \'t~.- f- ~\)~

.-.
en ~ COMMON BASE I , ..,.., \\)~~~
~ 1.0 f - - Vee = 20v. , ..,.., ./" ""c;
I' .S (SMALL HEAT SINK USED!.,
~
...., ....... ...- .... n\)~
'/,~"";;.
"'/ ~
6 .6 loome
- --
... -V" ~
,~ ..... ~
.. .. -
~ .4 ,,/ ~
~
.2
20 40 60 so 100
POWER IN -(MILLIWATTS)
Fig. 43. Common-base amplifier characteristics, 2N2410.
.-.
?Je SO
..,.
>-
SOme
...z
<:i
60
....i:::
....... 40
/
,,/ 2N2410
COMMON EMlnER
~
.... Vee = 20v.
...J ( I
...J 20
8 .2 .4 .6 .8 1.0
POWER OUT -(WATTS)
Fig. 44. Collector efficiency, 2N2410 as common-emiHer
amplifier at 50 mc.
---
- -
80
'#.
to
~
~
....
... 40
....
60
- -- -- ~mC
2N2410
COMMON BASE I--
ao:
B20 =
Vee 20v. r--
i
o .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3
POWER OUT -(WATTS)
Fig. 45. Collector efficiency, 2N2410 as common.base

amplifier at 50 mc.
160·mc Power Amplifier. This circuit (Fig. 46) is designed to operate as a

Class C power amplifier at 160 me with a power output of approximately 750 mw.
Since the minimum BVCBO rating is 60 v, the collector supply is limited to 30 v.
The BVCEO rating is only 40 v; however, the common-emitter circuit is essentially
in a BVCES condition and the breakdown characteristic is the same as BVCBO.
Pi matching networks are used at the input and output to reflect the proper
impedance to the transistor for maximum performance. The transistor was measured
with a 2" x 2" x Yz" aluminum plate attached.
The circuit was constructed on a 0.032" brass chassis with a metal shield passing
between the collector and emitter pins of the transistor socket. The Output coil has
an unloaded Q of 220 and the loaded Q is designed for a value of 10.
Power output was measured with a 50-ohm Hewlett-Packard Bolometer Mount,
Model 476A. Power gain is the ratio of this power to the power measured out of
the signal source into the same bolometer mount. See Figs. 47 and 4'8.
\
\
2N2863 \
500 , 500
Source Load
\
\
45- ) 8-60
380 9-180 pf
pf pf
Ll - #10 copper wire lj2 turn 5/8" I.D.

overall height 3/4".
L2-#14tinnedwire 11/2turns 1/2" I.D.
1/3" spacing.
Fig. 46. 160·mc power amplifier.

2100 I I I
COMMON BASE 70~

1800 t- Vee = 30 v
1/ ~
1500 V
V/
~ 1200
V/V V 100 mc-
.E V~
'0~ '\~ r- I
~ 900 160 mc-
_ ...
J'~.- ~~ f-o-
-
-/
o? I--
600
300
I~ ~ t7~oS-
~ v
o~
o 10 20 30 40 50 60 70 80 90 100
Fig. 47. Power out vs. power in, 2N2863 in common-base

configuration.
1400
COMMON EMITTER
1200 Vee = 30 v
1000
~ 800
.E.
I-
:> 600
o?
o 10 20 30 40 50 60 70 80 90 100
PIN (mw)
Fig. 48. Power out vs. power in, 2N2863 in common-emitter

configuration.
Supply voltage = 30 v
Power output = 750 mw
Efficiency = 25 %
3-db bandwidth = 15 me
173-mc Power Amplifier. The 2N1141 transistor is useful to 500 mc and
delivers excellent large-signal performance at 173 me in the power amplifier cir-
I shield
100pi
I
SO'O
SOURCE
10 0
l.S-1Spl
Rl = 500
2.7-30 0.03}lh
100
pi
+---1 1000pi
1.2}lh
L, - 2t # 16 WIRE, Ii" ID TA = 25°C
TAPPED AT 1 TURN
Vcc= -21v
Fig. 49. 173-mc amplifier.
cuit of Fig. 49. Two 2N1141's are connected in parallel to deliver an average of
400 mw to a 50-ohm load. Base resistors equalize input signal power to the tran-
sistors. Small heat sinks (JADERO #1101 or equivalent) are used.
Power output = 400 mw
Power gain = 11.5 db
Collector efficiency = 41.8 %
250-mc Power Amplifier. The 2N743 gives good large-signal performance
as well as good small-signal performance. Figure 50 shows a common-base power
amplifier test circuit with component values selected for 250-mc operation.
+ lOY
1000pl
0.68jJh RFC
l3 500pl 50tQ
~\-\- ........-""""---+--I~ LOAD
1 9·180
*' pI
INDUCTANCE DATA
COIL NO. AIR DUX NO. NO. !URNS
L, 404 5
Ll 408
L3 404
Fig. 50. 250-mc common-base power amplifier.

600
~I 't!1i ~/
.:!; $/ "'~/ ~/ I~ ""
"\!V ~~,.-
; ! / / ,,/ ~ (.--
,,'
,/'
,
//
500
II L ........-: 7' ,/ /
,,- ."
,/
I
--
wm~
I / / 7 /
/ /' ~ ,/
/Y / / ./ // v'
,/"
I I/; v~ ~/ // /"
~ ...
Ill/ l/ /~~.ft./ ,," _... - --
I---
~ /"
I // // / ' ;..-:........
_ - --
!// ,/
-~
/1 If/ //;' ~ // I--'-
II' //~ v/'" ,,/ I---~
--
.... , ... 2N743
100 T.=25°C
~~
,/
II/I~ r...~;...' Vee = 10V
1--
20 40 60 80 100 120
POWER INPUT (MILLIWATTS)
Figure 51 gives common-emitter amplifier performance, Fig. 52 gives common-

base performance, and Fig. 53 indicates the desirable frequency at which to switch
from common-emitter to common-base for two fixed drive levels.
9db 8db 7db 6db
400
/
/ II /1
/
/ / / / ,.-'" 5db
,.-
/~~l
/" /
,/
/ ...... ~,/ ."
/~ ~I '\~V. ~/
300 4db
/ ,/" ,.-/
,/
I. / ..,'/ ,.-"
I...
~~ V
VI // ,/,/ /,.- 3db
.......
:::0
200
) // /" / .... ....... .....
"..."
:::0
VII' vI'
LV;~ 1//
",,'
......
CI
,/
,/
/ ....
/
/
......"..."
".../
~
2
100
jj V//
///
~/
, /, /
V"- V/
,.- "... ......."
"..."'"
V
2N743
~#>' v,/" ~
...... /
TA=25°C
/1 ,,(I'~ ....~ Vee = IOV
~
~~
o 20 40 60 80 100 120
POWER INPUT (mw)
Fig. 52. Com men-base amplifier characteristics, 2N743.

I ......... CE/)
2
1
~'>~al
eEp ~Ij..
I""": I",~
L
~1J)1j.. "-
~
9 .....
1- ~ ~,
r--.
8
7
-- ~
~ :'-'-59/)
~
~
6 C6>,0 ?a':?
1j, ~ ~
5 s:a
2N743 ':?'I-~"-
4 TA=25'C
Vee = lOV '\
3
2
1
020 50 lOa 300

FREQUENCY (me)
Fig. 53. Combined power amplifier characteristics, 2N743.
TRANSMITTERS
1-watt 50-mc Transmitter. TI's new L-52 makes 1 watt at 50 mc easily obtain-
able. The circuit of Fig. 54 is a common-emitter Class C amplifier with a 1T-L
output circuit matching to a 50-ohm antenna. The input impedance matching
nerwork is designed to make the input impedance 50 ohms.
L52 (TO-5)
Bt
25v
LI= 3T NO. 16 Buss, 0.4 diom, 0.3" long, L=0.085~h

L2= 4T NO. 16 Buss,O.4 diom, 0.4" long, L= 0.12 ~h
L3=8T NO. 16 Soldereze, 0.5 diom, 0.5" long, L=0.5~h
L4=IOT NO. 16 Soldereze, 0.4 diom, 0.6" long, L=0.34~h
Power out =Iw

Power goin=IOdb
Fig. 54. l-watt 50-mc transmitter.
L52(m-5)
150
24-200
0.01
1511
Transistors mounted, in stud

heat sink package, to common
extruded -fin heat sink, 3" X 3 1/2".
B+
25V
LI=23/4 T No. 16 Buss,0.4" diam,0.3" long, L=.067~h
L2=5 T No. 16 Buss, 0.4" diam, 0.4" long,L=.14~h
Power out =lOw
L3=5 T No. Soldereze, 0.5" diam, 0.4" long, L=.22~h
Power gain=IOdb
L4=6 T No. Soldereze,0.5" diam,0.5" long, L=.34~h DC Power in =600ma at 25 v=15 w
Fig. 55. lO-watt 50-mc transmitter.
The relatively high breakdown voltage of this device allows the amplifier to be
amplitude modulated. The overall efficiency of the amplifier is approximately 65%.
la-watt 50-mc Transmitter. Two TI L-52's in parallel will produce 10 watts
of output power with 10-db gain. Figure 55 is basically a common-emitter circuit
with a 1T-L output matching network to match a 50-ohm antenna. Separate biasing
resistors are used in the base circuits to balance the operating currents of the two
transistors. The input circuit is designed to produce a 50-ohm input impedance.
Overall efficiency of this circuit is approximately 65%_
1-watt 170-mc Transmitter. This circuit (Fig. 56) is a single common-
emitt~r Class C amplifier utilizing TI's new L-52 to produce I-watt output power
L52( TO-5)
3-30pf
rlOOOPf
B+
25V
Po =I watt power gain = 4 db overage LI= I T No.I4 Buss, 0.5" diam
Vee =25v L2 =3 T No. 14 Buss, 0.4" diam, 0.3" long
L3= 5 T No. 14 Buss, 0.4" diam, 0.5" long
Ic=125ma
L4 =4 T No. 14 Buss, 0.4" diam, 0.4" long
Fig. 56. l-watt l70-mc transmitter.

at 170 mc. The Output circuit is a 7T- L network designed to match the output of the
transistor to a 50-ohm input impedance. The overall efficiency of this circuit is
approximately 30%, with I-watt output and 4-db power gain.
162- to lBO-me Transmitter. Figure 57 shows a narrowband transmitter
capable of being tuned over a frequency range of 162 to 180 me. The first stage
acts as a buffer for an oscillator. Second and third stages provide frequency multi-
plication. The fourth stage isolates changes that might appear in the load, to
prevent their being reflected across the tripler stage, which would cause frequency
instability. The final stage is a Class C power amplifier; the two devices in parallel
can deliver 300 mw to a 50-ohm load.
223-mc Transmitter. The 223-mc transmitter shown in Fig. 58 is satisfactory
for many telemetry applications.
The crystal-controlled Colpitts-type oscillator employs a 2N743 transistor work-
ing in the common-base configuration. The oscillator delivers about 10 mw into a
50-ohm load.
The first doubler is a common-emitter amplifier with a pi-type circuit in the
output tuned to the second harmonic and employing a trap network at the collector
to eliminate the fundamental in the output. Power gain of this circuit is about
6 db and the power output to the second doubler is about 40 mw at 111.5 me.
The second doubler is a common-base amplifier with a pi-filter in the output
tuned to the second harmonic. The trap eliminates the l1.5-mc fundamental. Power
output to the final is about 45 mw at 223 mc.
The final stage is a common-case Class C amplifier employing another pi-network
in the 223-mc output. The final will deliver 80 to 100 mw to a 50-ohm load.
STAGE I
33-3SMC STAGE 2 STAGE 3 STAGE 4 STAGE 5
AMPLIFIER DOUBLER TRIPLER DRIVER FINAL
IBlJh 12IJh 12IJh 1.5IJh tl5vdc 1.5v

0.001
'WI
~IO.I
~.
VI
~
0-
~
o Input
00 10 mw-30mc 0.001
50!l n
f... :rr~o
0.001 ~
~(t~3
T-··· . T I I
~ c
3
:: Illoof OIl"! 'OKf 1,00I Cs I 2.
n
a
::.
CD
I . I o
:0
I I
a
%
I I a
:::I
Q..
C"C2,CS,= B-SOpf a-
LI =BT, 114" Form with core,tap center L4 =2T ,114" Form, tap center o
C3,C4, C5 =1.5 -20 pf o
L2=ST,1I4" Form L5=3T,1I4" Form ~
All other capacitor values in IJf
L3=2T,1I4" Form QI Thru QS=SM249B
-....
Co)
1.5·20pf
ARCO #402
40pf I(OR EQUI~AlENT)
i HARMONIC SUPPRESSION
~ 0.0 77,1l h 300pf
35db -
Co)
Q)
n
6.8uh 0.28uh - 6.8lJh Cz o
Cl 6.8,1lh 3
3.3,1lh 3
9.lK I ~3.3K c) + 12.5V c
::s
+ 12.5V n'
o
....
6200
300pf
o·
::s
III
.,. XTAl 55.75mc

::J:
o
Iii' C, = ARCO #463 (OR EQUIVALENT) 9·1SOpf ::s
c..
III + 12.5V CI = ARCO #463 (OR EQUIVAlENT) 9·1SOpf IT
!XI C, = ARCO #465 (OR EQUIVALENT) 45·3SOpf C3 = ARCO #465 (OR EQUIVALENT) 45·3SOpf o
~
o
~
~
w
:11
"... l000pf 9 + 12.5V + 12.5V
a
..
::I
[.
HARMONIC SUPPRESSION 35db
~
;-
:'" 2N743
68~50_0
I
3.3jJh I
: 0.82jJh L lOAO
80mw
I
223
L,- O.03)1h I
~ TURN ~" DIAMETER COPPER I
STRIP %" WIDE \I,," THICK I L,-O.03)1h
ALL VARIABLE CAPACITORS L2 - ~ TURN Yc" DIAMETER COPPER I All VARIABLE CAPACITORS 'I, TURN '1," DIAMETER COPPER
ARE ARCO #463 (OR EQUIVALENT) 9·180pf STRIP %" WIDE ¥.I," THICK ARE ARCO #463 (OR EQUIVALENT) 9·180pf STRIP ';." WIDE ¥.I," THICK
9
Device Nomenclature and

Standard Test Circuits
GENERAL PRINCIPLES OF LETTER SYMBOL STANDARDIZATION

Electrical Quantities and Electrical Parameters. Electrical quantities deal
primarily with voltage, current, and time quantities. Electrical parameters deal
with the relationship between specific electrical quantities.
In studying the operation of a transistor, we assume it to be a black box with
two input leads and two output leads. See Fig. 1.
In describing this black box, we write equations relating the input current, input
voltage, output current, and output voltage. An example of this is the equation:
This equation states that the input voltage Vi equals the input current multiplied
by a certain number hi plus the output voltage Vo multiplied by a certain number
hr. The numbers hi and hr are parameters.
Although many electrical quantities (leo, Zener voltage, etc.) are called param-
eters, they are not parameters in the true sense of the word.
Electrical Quantities and Associated Subscripts. The following is a list of
accepted symbols for electrical quantities:
V = voltage (d -c volts)
v = voltage (a -c volts)
TRANSISTOR
SOURCE or
BLACK BOX
Figure 1
139
I = current (d-c amperes)
i = current (a-c amperes)
R = resistance (ohms)
Z = impedance (ohms)
Y = admittance (mhos)
P = power (watts)
f = frequency (cycles per second)
B = breakdown
The following subscripts are associated with these symbols for electrical quan-
tities:
E or e = emitter electrode
B or b = base electrode
C or c = collector electrode
o or 0 = open electrode
X or x = other electrode not opened
An upper-case subscript designates a d-c quantity while a lower-case subscript
designates an a-c quantity.
Examples:
Is = d-c current in circuit B
il> = a-c current in circuit B
First subscript: designates the electrode at which current or voltage is measured
with respect to the reference electrode.
Second subscript: designates the reference electrode. (If understood, this sub-
script may be omitted.)
Third subscript: designates circuit conditions at the instant the current or voltage
is measured. (If the second subscript is omitted, this becomes
the second subscript.)
Examples:
Ie so = collector-to-base d-c current with emitter circuit open.
leo = collector-to-base d-c current with emitter circuit open.
VSE = d-c voltage between base and emitter.
ic = a-c collector current in the collector circuit.
Electrical Parameters and Associated Subscripts. The following is a list of

the most commonly used subscripts. Formerly, double numbers were used instead
of letter subscripts but these have fallen into disuse because they are not sufficiently
informative. In all cases, the double number is considered as one subscript.
22 or 0 or 0 = output
11 or! or i = input
21 or F or f = forward transfer ratio
12 or R or r = reverse transfer ratio
E or e = emitter electrode
B or b = base electrode
C or c = collector electrode
Ooro = open (depending on relative position)
S or s = short
In most cases parameters have one, two, or three subscripts.
First subscript: designates input, Olltput, or ratio function
Second subscript: designates circuit configuration
Third subscript: gives additional information
Examples:
h22 or hob = output admittance with the input open (this is assumed)
and using a common-base circuit.
HOB = output conductance (1/ resistance) with the input open (this
is assumed) and using a common-base circuit.
hu or hib = input impedance with the output shorted (this is assumed)
and using a common-base circuit.
Bias Voltage Symbols. Bias voltages are supplied from a d-c source and are
designated by repeating the electrode subscript. The reference electrode may be
designated by the third subscript.
Examples:
VEE = d-c bias voltage applied to emitter circuit
Vee = d-c bias voltage applied to collector circuit
DEFINITIONS AND TEST CIRCUITS

Schematic Nomenclature.
-0 Meter, d-c or a-c ammeter or voltmeter, depending on

the letter the circle encloses
Fixed Capacitor
Adjustable Capacitor
A-C Source
--f'Y"Y'"'I- Inductor
+_ r-
-:f_ Adjustable d-c source (battery) with polarity as shown
E C
¥.
--A.Nv-
Transistor under test (PNP)
Resistor
-+ Variable Resistor
Figure 2
D-C Measurements and Test Circuits.
See Fig. 3:
lCBO = the current that flows when the collector-base junction is re-
verse biased to a specified doc voltage with the emitter open-
circuited.
BVCBO = breakdown voltage. A doc voltage, applied in the reverse direc-
tion of the collector-base junction with the emitter open-
circuited, which gives a specified reverse current.
See Fig. 4:
lEBO = the current that flows when the emitter-base junction is re-
verse biased to a specified doc voltage with the collector open-
circuited.
BVEBO = breakdown voltage. A doc voltage, applied in the reverse direc-
tion of the emitter-base junction· with the collector open-
See Fig. 5:
lCEO = the current that flows when the collector-emitter junction is
reverse biased to a specified doc voltage with the base open-
circuited.
BVCEO = breakdown voltage. A doc voltage, applied in the reverse direc-
tion of the collector-emitter junction with the base open-
E c PNP
E c NPN
B
+
CB~----------~~------------------~
Figure 3
PNP E C
NPN E C
B
+
Figure 4
PNP
E +
NPN
C
E
Figure 5
See Fig. 6:
ICER = the current that flows in the collector with a specified voltage
applied to the collector, and a resistor connected from the
base to emitter.
BVCER = the voltage measured between the collector and emitter with
a specified current flowing in the collector, with a resistor
connected from the base to emitter.
See Fig. 7:
IL = Leakage current between the can of a transistor and all elec-
trodes (emitter, base, and collector) at a specified voltage.
This is a measure of insulation resistance. This test is omitted
if one of the transistor leads is connected to the can.
See Fig. 8:
hFE = d-c beta (f3). Current transfer ratio of a common-emitter
transistor circuit.
Ic
hFE= -
IB
PNP
C
E
+
NPN
C +
E
Figure 6
PNP OR NPN
C
B
E
CAN
Figure 7
PNP
NPN
Figure 8
Operation:
1. With Vee set at a specified value, adjust RB until IB or Ie reads a specified
value, then read Is and Ie.
See Fig. 9:
Res = saturation resistance. Ratio of collector-to-emitter voltage
VeE, which at times is referred to as the saturation voltage
V cs, to the collector current Ie at a specified base current IB
in a common-emitter transistor circuit.
Res = VeE = Ves

Ie Ie
Operation:
1. Set IB at a specified value by varying RB.
2. Vary Vee until Ie reads a specified value and read VeE which equals Ves.
3. Or, vary Vee until VeE reads a specified value and read Ie.
Pulse testing. Any of the d-c parameters may be measured under pulse condi-
tions. This method is particularly useful for power transistors, for it allows
testing of the units without the necessity of heat sinking. TI uses a 2% or
less duty cycle, which means that the power pulse to the transistor is applied
for 2% (or less) of the time during a 16.7-millisecond period.
A-C Measurements and Test Circuits.
See Fig. 10:
hfe = a-c beta. Small-signal a-c current transfer ratio of a common-
emitter transistor circuit with the collector and emitter short-
circuited to a-c current.
PNP
c
E
Vas
+
-=-
NPN
C
E
Figure 9
Figure 10
Operation:
1. Cl shorts a-c current between emitter and collector.
2. C2 allows a-c current to bypass bias battery VBB and RB.
3. With Vee set a certain value, RB is varied until Ie reaches a specified
value.
4. Small a-c signal is applied and ie and ib are read.
Ie
5. hre = -;-
Ib
See Fig. 11:

hoe = small-signal a-c output admittance of a common-emitter tran-
sistor circuit with the base open-circuited to the a-c current.
Operation:
1. Capacitor Cl allows a-c current to bypass Vee.
2. Resonant circuit R constitutes infinite resistance (open) to a-c current, but
zero resistance to d-c current.
3. With Vee set at a specified value, RB is varied until either Ie or IE, as
required, reaches a specified value. This is called the bias condition.
4. Small a-c signal is applied and Vee and ic are read.
ic
5. hoe = -
Vee
PNP
c
E
+
NPN
C
E
Figure 11
See Fig. 12:

h re = small-signal a-c reverse voltage ratio of common-emitter tran-
sistor circuit with the base open-circuited to the a-c current.
Operation:
1. Capacitor Cl allows a-c current to bypass Vee.
2. Resonant circuit R constitutes infinite resistance (open) to a-c current, but
zero resistance to d-c current.
4. Small a-c signal is applied and Vee and Vbe are read.
5. h re = Vbe
Vee
See Fig. 13:
hie = small-signal a-c input impedance of a common-emitter tran-
sistor circuit with the collector short-circuited to the a-c
current.
Operation:
1. Capacitor Cl shorts the a-c current in the collector circuit.
2. Capacitor C2 allows the a-c signal to bypass the base d-c bias.
4. Small a-c signal is applied and ie and Vbe are read.
5• hIe. = Vbe
•
lb
PNP
E
+
NPN
Figure 12
PNP
E
+
+
NPN
Figure 13
See Fig. 14:
h ob(h22) = small-signal a-c output admittance of a common-base transistor
circuit with the emitter circuit open-circuited to the a-c
current.
Operation:
1. Capacitor Cl allows a-c current to bypass bias battery Vee.
2. Resonant circuit R constitutes infinite resistance, but zero resistance to
d-c current.
3. With Vee set at a specified value, RE is varied until IE reaches a specified
value. This is called the bias condition.
4. Small a-c signal is applied and Veb and ie are read.
ie
5. hob =-
Veb
See Fig. 15:
hib(hll) = small-signal a-c input impedance of a common-base transistor
circuit with the collector circuit short-circuited to the a-c
current.
Operation:
1. Capacitor Cl shorts the a-c current in the collector circuit.
2. Capacitor C2 allows a-c current to bypass bias battery VEE.
3. With Vee set at a specified value, RE is varied until IE reaches a specified
value. This is called the bias condition.
4. Small a-c signal is applied and ie and Veb are read.
5. hib -- -.-
Veb
Ie
VEE -=-
+
Figure 14
PNP
E C
B
+
VEE -- C2 C1 VCC
+
RE
NPN
E C
B
- +
VEE
+
- C2 C1 VCC
Figure 15
See Fig. 16:
hfb (h21) = small-signal a-c current transfer ratio of a common-base tran-
sistor circuit with the collector short-circuited to the a-c
current.
PNP
E C
NPN
E C
Figure 16
ic .
hfb = -;-
le
= - a (Sometimes referred to as a-c alpha)
For greater readability accuracy, 1 + hl'h is measured at TI:
ib
l+hfb=-:-
le
Operation:
1. Capacitor Cl shorts a-c current in the collector circuit.
2. Capacitor C2 allows a-c current to bypass bias battery VEE and RE.
3. With Vee set at a certain value, RE is varied until IF: reaches a specified
value.
4. Small a-c signal is applied and ie and ill are read.
See Fig. 17:

hrb = small-signal a-c reverse voltage ratio of a common-base tran-
sistor circuit with the emitter open-circuited to the a-c current.
Operation:
1. Cl allows a-c current to bypass Vee.
2. Resonant circuit R constitutes infinite resistance (open) to a-c current,
but zero resistance to d-c current.
3. With Vee set to a specified value, RE is adjusted until IE reaches a speci-
fied value.
4. Small a-c signal is applied and Veb and Vbe are read.
5. hrb = Vbe
Veb
PNP
C
NPN
C
Figure 17
See Fig. 18:
Cob (Co) = capacitance measured from the collector-to-base in a common-
base transistor circuit with the emitter open-circuited to a-c
current.
Operation:
1. C 1 allows a-c current to bypass bias battery Vee.
2. Resonant circuit R presents open circuit to a-c current.
3. With Vee set at certain value adjust RE untillE reads a specified value.
4. Cx is a calibrated adjustable capacitor. With the transistor removed, adjust
Cx until a null on V is reached, then place transistor in test and again null
V. The difference between the two Cx readings is Cob.
P g = a-c power gain. Ratio of output voltage multiplied by output
current to input voltage multiplied by input current. Some-
times referred to as Ap.
iovo
Pg=Ap = -.-
liVi
PNP
E
RE +V -
II +V -
0
EE CC
NPN
E
0
VEE
Figure 18
Tl's Apparatus division designed and built this detector and decoder, using TI
components, for the Ranger VII spacecraft. Ranger VII obtained the most detailed
photographs ever made of the lunar surface.
10
Noise Figure Measurement

by Harry F. Cooke
200-MC NF MEASUREMENT
Texas Instruments now includes 100% testing of 200-mc noise figure on several
of its high-frequency transistors. The method of testing is semi-automatic and is
based on the Hewlett-Packard 342A Noise Figure Meter. A block diagram of the
test layout is shown in Fig. 1.
Description of Test Set-up. The noise source is a Hewlett-Packard type
343A temperature-limited diode which has a useful range of 10 to 600 mc. It is
powered by the Hewlett-Packard 342A Noise Figure Meter and run at a constant
current of 3.31 rna.
The test jig is a common-base amplifier with input and Output tunable. Comm.on-
base operation is used since it avoids the problem of neutralization, which is some-
times necessary in the common-emitter connection operation to achieve sufficient
Noise diode Transistor 200-mc

HP 343A test jig post-amplifier
t-------\ 0 0 o
~--~ 0 o
342A noise figure meter
Emitter voltage Collector voltage

supply supply
Fig. 1. Noise figure test set-up.
155
gain. The noise figure of common-emitter and common-base transistor amplifiers
is essentially the same. The test jig circuit is shown in Fig. 2.
The post-amplifier is a three-stage transistor amplifier with a power gain of
40 db and a noise figure of 3.0 db. It uses three type 2N2415 germanium mesa
transistors in a cascaded common-base connection. The circuit is shown in Fig. 3.
The Hewlett-Packard 342A Noise Figure Meter is the heart of the automatic
noise figure measurement. It operates by pulsing the noise diode on and off while
comparing the noise outputs of the amplifier with the diode on and off. It is self-
contained and self-calibrating.
A majority of TI's customers are most interested in a noise test using a 75-ohm
source resistance. The 343A noise diode has a 50-ohm output and thus it is neces-
sary to transform the 50-ohm diode to 75 ohms with minimum losses. This is done
by using a 200-mc quarter-wavelength 61-ohm cable. This cable is made by remov-
ing the #20 center conductor from a 7.5" length of RG-58/U and substituting a
#21 center conductor. The ends of the cable are fitted with standard UG-88/U
BNe connectors.
Test Procedure. After making the set-up shown in Fig. 1:
1. Turn on supply voltages and the post-amplifier
2. Adjust the 342A according to the manufacturer's instructions
3. Insert transistor into the test jig and set the emitter current to the correct
value
4. Adjust input and output jig tuning for best noise figure. The input adjust-
ment is usually adjusted only once for a given transistor type
Input
1
J.5-10pf
O.OOlllf
1°'~
O.OOlllf
I~
Emitter
current
adjust
Fig. 2. 200-mc test jig.

Z = 500 OUTPUT
INPUT Z = 500
BNC
Johnson
1.5 flh
189- 6*
1.8-13
2N2415 or 16
-= ~11000 pf
189--4* 189-4* 1-/ 189-4 *
1.5-9.1 1.5-9.1 -= 1.5-9.1
5.1 k 5.1 k
+ 5.1 k
20 v
r
* or equivalent
Ll = 3T H18 bus 1/2 diam Gain = 40 db

Bandwidth = 25 Mc
L2 , L6 = Delavan 1537-16 or Equiv. Noise figure = 3 db
L3 4 = 3T *18 bus, 3/8 diam
Note: Transistors on
L5 '= 2T *18 bus, 3/8 diam 3/4-inch centers
Fig. 3. 200-mc amplifier.

I-GC NF MEASUREMENT
Description of Test Set-up. In Fig. 4, the test layout is given in block form.
The Hewlett-Packard 349A coaxial gas-tube noise source can be used to approxi-
mately 4 Gc. It has an excess noise of 15.7 ± 0.5 db, according to the manufac-
turer's specification. The HP 342A is an automatic noise figure indicator and pro-
vides the necessary power for the 349A. Noise figure is read directly in db with
this system.
A lO-db attenuator is used between the noise source and the test jig to reduce
the excess noise to 5.7 db. This gives a more accurate measurement of noise figures
below 10 db.
The test jig is designed for TO-5 or TO-IS devices. It is essentially a four-port
coaxially tuned common-base amplifier. By crossing the emitter and base leads, it
can be used as a common-emitter amplifier, provided the biasing network is suit-
ably modified. The common-base and common-emitter noise figures are the same
if the transistor is operated at the same gain level. Figure 5 shows the construction
details of the test jig.
Figure 6 shows in detail the elements of the tuning network which are part of
the test jig. The tunable shorted lines Ll, L2, and La are used as follows:
Ll tunes the source susceptance only. The source resistance is 50 ohms fixed,
unless otherwise specified. L2 tunes the collector circuit. La, in conjunction with L2,
comprises a double-stub tuner to tune and match the transistor output circuit to
the converter.
A 200-mc post-amplifier with 40-db gain and a 3.0-db noise figure is used. The
post-amplifier shown earlier in Fig. 3 is suitable.
The I-Gc signal is converted down to 200 mc in the converter as shown in Fig. 4.
The converter oscillator is operated at 1.2 Gc. Image response, which is thus at
1.4 Gc, is 30 db below the I-Gc response. The converter has a 5.0-db noise figure
and lO-db gain. A schematic of the converter is given in Fig. 7.
Test Procedure. To make a noise-figure measurement:
1. Insert transistor into the jig
2. Adjust bias according to manufacturer's specification
3. Adjust Ll, L2, and La for minimum noise figure. Once an appropriate setting
has been made, L2 usually will not require further adjustment for other tran-
sistors of a given type
HP 342A
HP 349A noise meter
noise IO-db I Gc/200 mc 200-mc
source attn. converter
Figure 4
-----,
r-- 0.75"----j
PORT A INPUT
I
I
I r-+--+-L-t.....,
I TYPE N RECEPTACLE
(4 REQD)
II-+-t---+-i
* AEROVOX EF4 1000 pf D-C
BLOCKING CAPACITORS (2) I
I
PORT C
INPUT TUNING
~~ \ f
",-- MICA WASHER ON
C & D ONLY
fii ~
""
tft =~ ~~+------~-
r-- B
"'-PORT D
OUTPUT TUN ING
d
1 __ L------+J'-----+H-+----L-----'
I
I I NOTE - TYPE N CONN ECTORS
ALL METAL
I-- 0.62" I I ARE NOT SECTIONED
PARTS SILVER PLATED I I APPROX. SCALE 2" -\"

PORT B --l I-- 0.22"
OUTPUT-
Fig. 5. TO-lS, TO-S common-base UHF amplifier module.

..
S
n
HP 349A ;
( N·oisE SOURCE ~ PRECISION 50 n 3
c
~ / r"'I t.., TERMINATION :I
ft·
16]:5 n~ n L3
LI, L2, & l3ARE MICROlAB
...ci"
a
:I
S05MN ADJUSTABLE SHORTS 1/1
1• , 4. UG 57B/U COUPLER %
a
2. UG 107B/U TEE :I
I.
r
D-
3. UG 27A/U ELL
~
IIIIC/200IllC ~w.'_
I~BNC
\ HP
I
CONVERTER 342A
NOISE METER
TEST JIG LI
Fig. 6. l-Ge noise figure test layout.

1-13pf 200 me if
TANK
1N82A" rfe
200 me
......--(0) OUTPUT
1ge Amp 15pf ~ H~I---..J
0.001 01
~ rfe
rfe
1K
1-10pf
2.7K
01 - RF AMP 2N2999
Q2 - OSC. - 2N2999
-12V
Fig. 7. l·Ge 200·mc converter.

Mariner Flight Data Encoder, designed and built by TI Apparatus division for the
Mariner spacecraft.
11
Power Oscillator Test Procedure

by Harry F. Cooke
l·GC POWER OSCILLATOR TEST

Fixture Description. Some devices are functionally tested for output power as
self-excited oscillators at 1 Gc. The test fixture is a common-base tuned-collector
tuned-emitter oscillator. Fe~dback is provided by the internal capacitance of the
transistor itself and the incidental capacitance of the transistor socket. Figure 1
shows the test fixture. Since the length of the collector cavity is fixed, frequency is
adjusted with the capacitive probe as shown. Collector loading is varied by the
coaxial capacitive probe. Bias for the collector is brought in through the center
conductor of the collector cavity by way of a lOOO-pf feedthrough capacitor. Emit-
VARIABLE LENGTH
SHORTED LINE] 0.02).1f
EMITTER
TUNIN~~ trl OUTSIDE d-c BLOCK, 30pt (MICROLAB HR-5IN
OR EQUIVALENT)
=======-«=1~
- vEEo--4::=lt:::::tl;.;1::- IOOOpt DISCOIDAL CAPACITOR
r ,,). , ,
1.0' INSIDE J:
FREQUENCY
~JUST l . }:
SILVER-PLATED
BRASS SLEEVE
CAPACITIVE PROBE
d-c
BRASS...-rt·:·:t·:·:·;::-:·:J·:-:·;::·:-:J·:·:·;::·:-:j·:-:·~:pJJJJ:U COMMON
SILVER- PLATED
QUARTER-WAVELENGTH
CAVITY
~
.25'00
J
0.875" 10
Fig. 1. loGe oscillator power output test circuit.

163
ter bias is connected to the transistor via the emitter line through an outside d-c
block (See Fig. 1).
Test Procedure. Figure 2 is the test layout. An outside d-c block and adjustable
short are connected to the emitter via the type-N receptacle. Emitter bias is applied
between the lead coming out through the bottom of the cavity, and ground. The
output line is connected to the lO-db attenuator as shown. When the set-up is com-
pleted as in Fig. 2, the transistor is plugged into the socket from the open end
(refer to Fig. 2) and the biases are set according to specifications. To tune the
oscillator, use the following procedure:
1. Maximize output by adjusting the emitter line
2. Maximize output by adjusting the output probe
3. Maximize output by retuning the emitter line
4. Check frequency for 1.0 Gc
5. (a) Turn frequency adjust probe in (clockwise) to lower frequency, or
(b) Turn frequency ad just probe out (counter clockwise) to raise frequency
6. Repeat steps 1 through 4
It may be necessary during the tuning procedure to reset the emitter bias since
this is affected by strong oscillations. The correct power output is that obtained
at 1 Gc with rated collector voltage and current.
1- TO 4-GC POWER OSCILLATOR TEST
Fixture Description. Figure 3 is a detailed drawing of the test fixture itself. It

is basically a two-cavity oscillator with the internal capacitance of the transistor
itself providing the necessary feedback. The tunable cavity between the base
and emitter presents the proper susceptance to the emitter to give oscillation. In
the collector-base circuit a double-stub tuner is used both as the collector tuning
element and as an output matching device. To bias the transistor, the outside con-
ductors of the emitter and collector lines are isolated from the V-shaped center piece
by 0.001" Mylar* film.
MICROLAB SO"5MNt
~ADJUSTABLE SHORT
MICROLAB HR-5INt
O.02)Jf -D.C. BLOCK
LOADING ADJUST
;I
IOdb
/ H.P.43IBt
POWER METER
ATTENUATOR
t
TEST FIXTURE tOR EQUIVALENT
Fig. 2. l-Gc oscillator power output test layout.
*Trademark of DuPont Corporation.

Test Procedure. After the test layout has been completed as shown in Fig. 4,
the transistor is inserted into the test fixture so that the collector connects to the
double-stub tuner. The biases are then adjusted to the specified values.
Next, adjust the tuning stub nearest the transistor to about midway in its travel.
The remaining stub and the emitter line are both adjusted for maximum power
output as indicated on the power meter. It may be necessary to repeat the adjust-
ment of these two elements several times to get the maximum power. At this point,
the frequency should be checked with the frequency meter. If the frequency is low,
shorten the stub nearer the transistor and then read just the other stub and emitter
line. If the frequency is high, lengthen the stub nearer the transistor. Once the
correct frequency has been obtained, only minor adjustments will be necessary for
other transistors of the same type. The correct power output is that which is ob-
tained at the desired test frequency.
'*"6-32 SCREWS BASE PI ECE NO. I

0.60 LONG
2 REO'D.
ADAPTOR
PIN,*" I
STUB
TUNER -----~ADAPTOR PIN #2
ADAPTOR
""---0.001 MYLA~
\ #6-32 SCREWS
' TEFLO~ -0.25 LONG
GROUND CLIP / INSULATOR 4 REO'D.
CLIPS
USE MICROLAB S2-15N FOR 2T04Gc;S2-05N FOR IT02Gc
DOUBLE STUB TUNER WITH
FEMALE CONNECTOR REMOVED
Fig. 3. Top view, 2-Gc cavity.
HP 10db
536A ATTENUATOR
'--_ _ _ _--' THERMISTOR FREQ.
HP431 MOUNT METER
POWER METER
Figure 4
DRILL
# 17(#4-40 N.C. 0.25 4 PLACES 90° APART
(
!--0.695~ DIA. B.C. 1.20 0.187-1 I-- # 6-32 N.C .
T
.'V+ ~ I/
I
r Ji.~~ TT
1-- :$/6~~~C5.~5
~.
! ~L<~"':':'
-<+-f-- 055
l ~>,
1r
0.35 0.60 ....
0.30
t- -t-T-'
, 45° /
--!-.
0.30 -- .. Y
'-1
1
11-
L ._ A
YI
,
I
Jl
_Vi
I
I'
,
*
<f~;~:-..l. :~±;
2.00 ''''~J=,'
1 I
, I
I '
.+"
h~
I
I
i ii! !
LO.895---II..-0.60---"
•
'....----1.65------.1
#6-32 N.C. 1---1.045~0.25r
5~~Cg.~5\! iO·gI15 i --.-l r-
o·1:~7-1··*--@=t~:::50
DIA
Fig. 5. Base piece No.1, 2-Gc cavity.
22° 15'
#6-32
DEPTH 0.25
#17(.173) #4-40 N.C. DEPTH 0.25 2 PLACES
'\ DIA, 4 PLACES 45° APART \ CLAMP TO PLATE
}--
0.6 r
'!:~
:.:~jp'
\
~
--0- i'i~--- 1
i 11
DIA, B.C. ,8
0.55 r
0.35
t·
FOR POSITIONING
\,
I 03 . 1.05 0.30
...t_ 1./:.. .~:~ :~ ~ L
L# 6-32 DEPTH 0.2~ :2 PLACES
Fig. 6 .. Base piece No.2, 2-Gc cavity.

I
,,
"
I i,
,
,
"
"
, ,
"
"
1\
+--- -
A I r-= I--,
, ..... 1-'
'" I
l~ -- I--- - - - - - - - - - - - - - - - - -
~ W
: :
R~ II ~CAVITY
"
:" I
I , I
, I SHELL
STUB TUNE
ADAPTo.R I
Fig. 7. Front view (without front plate), 2-Gc cavity.
CAVITY SHELL
Fig. 8. Back view, 2-Gc cavity.
11 r o.·o.55
o..o.~ II :1~5 D~
~
':-\'~7o.
,', L
\-.- _;~I
'T - DIA
.
.280.
DIA.
.235
DIA. SECTlo.N AA
A
PISTo.N
---.
MATERIAL-BRASS, SILVER-
I
0..0.55
,-
0..0. 15 11 L
0..375
~
2 Ho.LES-
0..062 DIA.
x 0..125 DEEP
PLATE, 20.0. ~ IN.
~/BEVEL
~ Py-f -
o..o.5DIA.
o..25DIA.
A
:
0.175 1-0..0.20.
SECTlo.N AA t1
1 1
o.fJi·fo.
1 1'- R. TYP.
0..0.70.-1 I-
DI A. I--0.0.50.
0..20.--1 f.--
INSULATo.R MATERIAL-TEFLo.N 2 REO'D.
GRo.UND CLIP
MATERIAL-C.o.lO PHOSPHo.R BRONZE
Fig. 9. Piston, ground clip, and Teflon insulator, 2-Gc cavity.

CLIP
MATERIAL
0.05 0.005-0.0075
~= PHOSPHOR BRONZE
'1 LO.15
FOLD 8 RETEMPER
2 REQUIRED
0.125
MATERIAL - BERYLLlUM·COPPER DIA.
HEAT TREATED PIN #2
FINISH - SILVERPLA1E 2 REQUIRED
Fig. 10. Adaptor pin No.1, 2·Gc cavity. Fig. 11. Clip and adaptor pin No.2,
2·Gc cavity.
"*28(40) DIA.
' \ 4 PLACES
i~_ ~r
r -4
I
0.25 I
I
0.55- -f- --1- __ 1-1-
rL
I-0.60
I I I
$i--+-~t-$-
I I:
J
L- 0 .90---.i
Fig. 12. Front plate, 2·Gc cavity.
DRILL #' 31 !.I200) DIA. MATERIAL - BRASS

-4 PLACES FINISH-SILVERPLATE, 200 ~ IN.
DIA. B.C .. 8
/ DRILL 3/32 DIA.
3 PLACES
DIA. B.C.. 250
SECTION A-A -=
~ 1.1o
r
~
0.50 Z2 . _ . _ . _ . _ _ . _ . _ . _ . _ . _ . _ . _ . -
DIA. DIA.
1.. §2§
~:------6
~O.IO ~
I
I -------11
.1
6.25
.LQI5
·Fig. 13. Cavity shell, 2·Gc cavity. --r:::-

5/8 -24 THO.

PTH 0.30
MATERIAL -BRASS
FINISH- SILVERPLATE, 200 II IN.
Fig_ 14_ Stub tuner adaptor piece No.1, 2-Gc cavity.
CENTERHOLE # 2- 56 NC
. _
J-1
0.015
TYP.
0.041
~~APERED ,,~UCK
I
DIA.
DEPTH 0.25
0.231-
~
_. .
6.38
tE.,: _.
DEPTH 0 2 5 ' \
•
.
I0.15 DIA. .
0.125DIA.
CENTER CONDUCTOR
MATERIAL- BRASS, SILVERPLATE 200 ~ IN.
0.062 DIA.
LE::::::=::::=::::=::::=~~====~t====~:::=::~ FU Ll R
O~IF.~~~~~~~~~~~
7.00
1-------- -----------1
PULL BAR
MATERIAL- BRASS, SILVERPLATE
Fig. 15. Inner conductor and pull bar, 2-Gc cavity.

Index
Admittance parameters, 64-68 Amplifier, maximum acceptable noise

Aeronautical-navigational band, 110 -figure, 68
AGC, 24, 35-36 microwave, 79-80
Aldridge cascade circuit for distortion minimum acceptable gain, 68
reduction, 59 noiseless; 1-3
Amplification, low-noise, 79-89 noisy, 1-13
Amplifier-oscillator, 500-mc, power, 72 parametric, noise in, 86-87
Amplifier, one-stage, 70-71 power, 126-134
0.5- to 1.45-Gc, wideband, 73-74 RF, 108-111
4.7-mc driver, 128 selecting operating point for, 68
5.5-mc IF, 118-119 stages, gain-controlled, 22-36
30-mc, 22-23 two-stage low-level d-c, 102-103
30-mc double-tuned, 122 wideband unity-gain, 106, 108
30-mc IF, 120-121 Automatic gain control, 24, 35-36
30-mc tetrode, 25 Avalanche multiplication, 57
50-mc power, 128-130 Avalanche noise, 83
60-db low-noise, 105
60-mc IF, 123
60-mc tetrode IF, 123
Ballantine rms voltmeter, 8
60- to 90-mc voltage-tuned, 108-109
Base transport efficiency, 57
70-mc low-noise, 124
Bechtel constant, 84
770-mc neutralized, 26-27, 125
Bias voltage symbols, 141
70-watt audio, 126-127
Bootstrapping, 101
105-mc IF, 125-126
Boxall method for distortion reduction,
160-mc power, 130-131
173-mc power, 131-132 58-59
Bridge, transfer function and
200-mc, 157
immitance, 66
250-mc power, 132-134
250-mc RF, 109
450-mc, 29, 32
450-mc RF, 100 Capacitors in tank circuits, 42
500-mc, 111 Clapp oscillator, 50-51
500-mc linear, 68-70 Co-axial cavity, 1-Gc, 75
500-mc small-signal common-emitter, Collector multiplication, 57
70-71 Colpitts oscillator, 112-113, 116, 118,
500-mc staggered-tuned, 126-127 136
class C, 134-136 Colpitts-Pierce crystal oscillator,
extremely high gain, 102 40, 43
high-impedance low-noise wideband, Constant-noise contours, 104
101-102 Converters, 112-118
high input impedance, 105-107 250- to 60-mc, 114-115
IF, 118-126 450- to 105-mc, 116-119
large-signal, 63-64 Cross-modulation products, generation
L-band, 75 of, 54-55
low-level low-frequency, 101-108 'Crystal, equivalent circuit, 43-44
low-level low-noise, 103-104 Crystal oscillator stability, 43-44
171
172 Index
Diode, ideal, 55 Gain control, comparison of methods,
Diode, tunnel, noise in, 86 22-36
Diode, varactor, 108 Gain control, external, 19
Distortion analysis, 54-58 emitter degeneration type, 19-20
Distortion reduction, 57-59 input shunt type, 19-20
Aldridge cascade circuit for, 59 output shunt type, 19-20
Boxall method for, 58-59 Gain control, hybrid, 22
circuits for, 58-59 Gain control, internal, 20-21
Distortion, sources of, 55-58 forward, 20-21
Dynamic range, 53 reverse, 20-21
tetrode, 20-21
Gain-controlled amplifier stages, 22-36
Gain, extremely high, amplifier, 102
Early effect, 56 insertion, 22
en, in method of noise characterization,
minimum acceptable in amplifier, 68
1-4 power, 68
Equivalent circuit, crystal, 43-44 Generation of cross-modulation
External gain control, 19 products, 54-55
emitter degeneration type, 19-20 Generation of harmonics, 54-55
input shunt type, 19-20 Generation of intermodulation
output shunt type, 19-20 products, 54-55
4.7-mc driver and amplifier, 128 Generation-recombination noise, 83
5.5-mc IF amplifier, 118-119
5.5-mc IF strip, response curve for,
120 Harmonics, generation of, 54-55
50-mc power amplifier, 128-130 Hybrid gain control, 22
450-mc amplifier, 29, 32
450-mc RF amplifier, 110
450- to 30-mc mixer, 113-114 Ideal diode, 55
450- to 105-mc converter, 116-119 IF amplifier, 118-126
.500-mc amplifier, 111 5.5-mc, 118-119
linear, 68-70 5.5-mc strip, response curve for, 120
small-signal common-emitter, 70-71 30-mc, 120-121
staggered-tuned, 126-127 60-mc, 123
500-mc oscillator, 113 60-mc tetrode, 123
500-mc power amplifier-oscillator, 72 105-mc, 125-126
Feedback circuit, frequency - selective, Inductors in tank circuits, 42-43
38 Injection efficiency, 56
Feedback oscillator, 38 Input characteristics, nonlinear,
Clapp, 40, 42 effects of, 55-56
Colpitts, 38-40 Input signal capability, maximum,
crystal,40 19-36
'IT-type, 38 Insertion gain, 22
tapped Hartley, 38-39 Instability, causes of frequency, 44-46
two-winding Hartley, 38-39 Intermodulation products, generation
FET (see Field-effect transistors) of, 54-55
Field-effect transistors, 79 Internal gain control, 20-21
noise in, 12, 84-86 forward, 20-21
l/f corner frequency, 83 reverse, 20-21
Flicker (see l/f noise) tetrode, 20-21
Frequency drift, 44-46
Frequency instability, causes of,
44-46 L-band amplifier, 75
Frequency stability, specification, 46 LC coupling, 73
Frequency stability, techniques for LC resonator, 42-43
improving, 46 Low-noise amplification, 79-89
Low-noise design, 14-17
bias point in, 14
Gain control, automatic, 24, 35-36 devices for, 14-15
Gain control characteristics, 23-35 precautions, 87-89
Index 173
Measurement, 200-mc noise figure, Noise, generation-recombination, 83
155-157 Noise generator correlation, 1-4
Measurement of: Noiseless amplifier, 1-3
BVCBO' 142 Noise, l/f, 82-83
BVCEO, 142-143 Noise, scintillation (see l/f noise)
BVCER , 144 Noise, shot, 81-82, 84-89, 91-96
BV EBO' 142-143 Noise sources, 83-87
Cob, 153 Noise terms defined, 15-16
h fb (h 21 ), 151 Noise, thermal, 80-81, 84-89, 91-92,
h re , 146-147 94-96
hFE' 144-145 Noise, types of, 79-83
h ib (h l l ), 150-151 Noisy amplifier, 1-3
hie, 148-149 Nomenclature, schematic, 141
hob (h 22 ), 150
hoe' 147-148
h rb , 152
h re , 148-149 l/f noise, 82-83, 91-92
I CBO' 142 l/f region, 9-13
I CEO , 142-143 1-Gc co-axial cavity, 75
I CER , 144 1-watt 50-mc transmitter, 135
lEBO' 142-143 1-watt 170-mc transmitter, 135
Iv 144-145 105-mc IF amplifier, 125-126
R cs , 146 160-mc power amplifier, 130-131
Measurements, d-c, 142-146 162- to 180-mc transmitter, 136-137
Microwave amplifiers, 79-80 173-mc power amplifier, 131-132
Microwave frequencies, 61-77 Operating point, influence of on
Miller capacitance, 101 distortion, 57-58
Minimum noise factor, 4 selection of for amplifier, 68
Mixers, 112-118 Oscillation, conditions for, 37
30.- to 5.5-mc, 112 Oscillator, feedback, 38
450- to 30-mc, 113-114 Clapp, 40, 42
Multiple-unit-chip devices, 64 Colpitts, 38-40
Multiplication, avalance, 57 crystal, 40
7T-type, 38
tapped Hartley, 38-39
NF,l two-winding Hartley, 38-39
NF measurement, 9 Oscillator, 112-118
NF m , 8 2-Gc, 76-77
NF T ,8 20-mc, power, 112
Noise, avalanche, 83 23-mc push-pull, 49-50
Noise contours, constant, 104 24-mc, 50-51
Noise corner frequency, 10-12 30-mc, 50-51
Noise factor as function of 'Y, 1-6 60-mc, 50-51
Noise factor minimum, 3 200-mc, 113
Noise figure, 68, 79-89 500-mc, 13
calculation, 96 amplifier, fixed tuned, 74-76
conventional definition, 96 Clapp, 50-51
equation, high-frequency, 94-95 Colpitts, 112-113, 116, 118, 136
in gain control, 22 configurations, 37-41
maximum acceptable in amplifier, 68 design example, 47-49
medium and low frequencies, 98-99 design procedure, 47
measurement, 6-9 large-signal, 63-64
measurement, 1-Gc, 158-161 load on, 42
measurement procedure, 7-9 Oscillator, RF harmonic, 37-52
measurement, 200-mc, 155-157 test, 1-Gc power, 163-164
minimizing, 98 test, 1- to 4-Gc power, 164-169
minimum, 84 transistor as, 44
plateau, 98-99 Output characteristics, non-constant,
simplified, 91-99 effects of, 57
174 Index
Parameter definitions, 141-153 223-mc transmitter, 136, 138
Parameters and quantities defined, 250-mc power amplifier, 132-134
139-153 250-mc RF amplifier, 109
Parametric amplifier, noise in, 86-87 250- to 60-mc converter, 114-115
Planar-epitaxial silicon, 61 Tank circuits, 41-43, 110
Power amplifier, 126-134 capacitors in, 42
50-mc, 128-130 components, 42-43
160-mc, 130-131 inductors in, 42-43
173-mc, 131-132 Test circuits, 141-153
250-mc, 132-134 d-c, 142-146
Power gain, 68 Test fixture, 1-Gc power oscillator,
Pulse testing, 146 163-164
1- to 4-Gc power oscillator, 164-169
Testing, pulse, 146
Rejection, high common mode, 102 Test jig, 200-mc NF, 155-156
RF amplifier, 108-111 Test procedure, I-Gc NF, 158
250-mc, 109 1-Gc power oscillator, 164
450-mc, 110 1- to 4-Gc power oscillator, 165
RF harmonic oscillators, 37-52 200-mc NF, 156
Test setup, 1-Gc NF, 158
200-mc NF, 155
60-db low-noise amplifier, 105 Thermal noise, 80-81, 84-89, 91-92,
60-mc IF amplifier, 123 94-96
60-mc oscillator, 50-51 Transducer, high impedance, 103-104
60-mc tetrode IF amplifier, 123 Transfer characteristics, non-
60- to 90-mc voltage-tuned amplifier, constant, effects of, 56
108-109 Transfer function and immittance
70-mc low-noise amplifier, 124 bridge, 66
70-mc neutralized amplifier, 26-27, Transmitter, 134-138
125 1-watt 50-mc, 134
70-watt audio amplifier, 126-127 1-watt 170-mc, 135
Schematic nomenclature, 141 10-watt 50-mc, 135
Shot noise, 81-82, 84-89, 91-96 162- to 180-mc, 136-137
Stability, crystal oscillator, 43-44 223-mc, 136, 138
Subscript notation, 139-141 Transistors as oscillators, 44
Symbol standardization, general Transistors, avalanche noise in, 83
principles of, 139-141 Tuned LC circuit (see Tank circuits)
Tunnel diode, noise in, 86
2-Gc oscillator, 76-77
10-watt 50-mc transmitter, 135 UHF silicon transistors, 61-77
20-mc power oscillator, 112 UHF 'fV tuner, 110-111
23-mc push-pull oscillator, 49-50
24-mc oscillator, 50-51 Varactor diodes, 108
30-mc amplifier, 22-23 Varactor multiplier, 77
30-mc double-tuned amplifier, 122 Varactor, noise in, 86-87
30-mc IF amplifier, 120-121 VHF band, 109
30-mc oscillator, 50-51
30-mc tetrode amplifier, 25 Wideband amplifier, 0.5- to 1.45-Gc,
30- to 5.5-mc mixer, 112 73-74
200-mc noise figure measurement,
155-157
200~mc oscillator, 113 Zener diodes, avalanche noise in, 83
TEXAS INSTRUMENTS
INCORPORATED
POST OFFICE BOX 5012 • DALLAS 22. TEXAS
."
TEXAS INSTRUMENTS
INCORPORATED
POST O~FICE BOX 5012 • DALLAS 22, TEXAS
TEXAS INSTRUMENTS
INCORPORATED
SEMICONDUCTOR - COMPONENTS DIVISION
POS T O~F I C E BOX 5 0 12 • D A L LA S 2 2 . TE X A S
.C·UJI-'II
P"IliITI;. 114 II • .-

TI Communications Handbook Part II 1965

Uploaded by

Copyright:

Available Formats

TI Communications Handbook Part II 1965

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

TI Communications Handbook Part II 1965

Uploaded by

Copyright:

Available Formats

PRICE $2.

TEXAS INSTRUMENTS INCORPORATED • SEMIC N UCTOIt·COMPONENTS DIVISION

TEXAS INSTRUMENTS HANDBOOK SERIES

Transistor Circuit Design: Staff· McGraw-Hill

Field-effect Transistors: Sevin· McGraw-Hill

Copyright © 1965 by Texas Instruments Incorporated. All Rights

Information contained in this book is believed to be

Chapter 1. Noise Characterization 1

Chapter 2 Transistor Gain Control 19

Chapter 3. RF Harmonic Oscillators. 37

Chapter 4. Transistors in Wide-band Low-distortion Amplifiers . 53

Chapter 5. VHF and UHF Amplifiers and Oscillators

Chapter 6. Causes of Noise 79

Chapter 7. Transistor Noise Figure 91

Chapter 8. Communications Circuit Applications 101

Chapter 9. Device Nomenclature and Standard Test Circuits. 139

Chapter 10. Noise Figure Measurement. 155

Chapter 11. Power Oscillator Test Procedure 163

In the measurement of in, it is necessary to open-circuit the input of the ampli-

F = 1 + 4k~aF (in2Rg + ~: + 2yenin ) (2)

where k = Boltzmann's constant = 1.38 X 10.23 Joules/oK

2·a = Voltage Across R.,,= 1

en2 = 4kTM [r'b + re + (re ~ r'b) 2] (6)

Substituting these values into Eq. (2) and solving for y:

2N930 1398 Devices 1 Nov 62

5% 10% 0% 5% 10% 0% 5% 10%

A step-by-step procedure for measuring noise figure is as follows:

Audio R Amplifier Low-

Error db = NFT - NFm = 20 log '\JI( No

To keep the error to a minimum, the signal-to-noise ratio should be as large as

TENTATIVE DATA SHEET

·YIIE CGLLEClOI 1$ II ELEClIICAL

ALL tlIEIUIOIIS'IE III nKHES

*ablOlute maximum ratings at 25°C free-air temp.rature (unl." otherwise noted)

LOW CURRENT GAIN

OL-____ ~ ____ ~~ ____ ~ ____ ~ ______ ~ ____ ~

1"- 101'\.., 100,"", 1 ke 10 ke 100ke 1000ke

"Transistor Noise Figure," Harry F. Cooke, Texas Instruments Inc., Solid/State/

Transistor Gain Control

EXTERNAL GAIN CONTROL

Fig. 1. Types of external gain control.

INTERNAL GAIN CONTROL

Fig. 2. Forward gciin control.

AGe VOLTAGE Vee

Fig. 3. Reverse gain control.

Fig. 4. Tetrode gain control.

Fig. 5. Hybrid gain control.

GAIN-CONTROLLED AMPLIFIER STAGES

SO.n 680pf SO.n

Fig. 6. 2N2189 30-mc amplifier.

-.oz -.05 -0.1 -O.Z -0.5 -1.0 -z

Fig. 7. Reverse gain control characteristics.

Fig. 8. Reverse gain control pass.band characteristics.

Figure 9 is the forward gain control characteristic. This circuit provides 20 db

COLLECTOR CURRENT (rna)

Fig. 9. Forward gain control characteristic.

Fig. 10. Forward gain control pass-band characteristics.

Fig. 11. 3N34 30-mc amplifier.

Fig. 12. Tetrode gain control characteristic.

OL- ~ ~~ ~ ~ ~ __ ~