Scribd Logo
Upload

Welcome to Scribd!

  • 12 views

    MMBV109LT1

    Uploaded by

    Bruno
    1) Leshan Radio Company produces silicon epitaxial diode voltage variable capacitance diodes for frequency control and tuning applications, providing reliability over mechanical tuning methods. 2) The diodes have high Q values and controlled, uniform tuning ratios at VHF frequencies, with guaranteed minimum capacitance values between 26-32 pF. 3) The diodes are available in surface mount packages and have maximum ratings for reverse voltage, forward current, device dissipation, and operating temperatures.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    MMBV109LT1

    Uploaded by

    Bruno
    12 views2 pages
    1) Leshan Radio Company produces silicon epitaxial diode voltage variable capacitance diodes for frequency control and tuning applications, providing reliability over mechanical tuning methods. 2) The diodes have high Q values and controlled, uniform tuning ratios at VHF frequencies, with guaranteed minimum capacitance values between 26-32 pF. 3) The diodes are available in surface mount packages and have maximum ratings for reverse voltage, forward current, device dissipation, and operating temperatures.

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    1) Leshan Radio Company produces silicon epitaxial diode voltage variable capacitance diodes for frequency control and tuning applications, providing reliability over mechanical tuning methods. 2) The diodes have high Q values and controlled, uniform tuning ratios at VHF frequencies, with guaranteed minimum capacitance values between 26-32 pF. 3) The diodes are available in surface mount packages and have maximum ratings for reverse voltage, forward current, device dissipation, and operating temperatures.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    12 views2 pages

    MMBV109LT1

    Uploaded by

    Bruno
    1) Leshan Radio Company produces silicon epitaxial diode voltage variable capacitance diodes for frequency control and tuning applications, providing reliability over mechanical tuning methods. 2) The diodes have high Q values and controlled, uniform tuning ratios at VHF frequencies, with guaranteed minimum capacitance values between 26-32 pF. 3) The diodes are available in surface mount packages and have maximum ratings for reverse voltage, forward current, device dissipation, and operating temperatures.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    LESHAN RADIO COMPANY, LTD.

    Silicon Epicap Diode MMBV109LT1


    Designed for general frequency control and tuning applications;
    MBV109T1
    providing solid–state reliability in replacement of mechanical tuning MV209
    methods.
    • High Q with Guaranteed Minimum Values at VHF Frequencies
    26–32 pF
    • Controlled and Uniform Tuning Ratio
    VOLTAGE VARIABLE
    • Available in Surface Mount Package
    CAPACITANCE DIODES

    3 1
    CATHODE ANODE
    1

    CASE 318–08, STYLE 6


    SOT– 23 (TO–236AB)
    MAXIMUM RATINGS
    Rating Symbol Value Unit
    MBV109T1 MMBV109LT1 MV209
    Reverse Voltage VR 30 Vdc
    Forward Current IF 200 mAdc
    Device Dissipation PD
    @T A = 25°C 280 200 200 mW
    Derate above 25°C 2.8 2.0 1.6 mW/°C
    Junction Temperature TJ +125 °C
    Storage Temperature Range T stg –55 to +150 °C
    DEVICEMARKING
    MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
    ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
    Characteristic Symbol Min Typ Max Unit
    Reverse Breakdown Voltage V (BR)R 30 — — Vdc
    ( I R = 10 µ Adc)
    Reverse Voltage Leakage Current IR — — 0.1 mAdc
    ( V R = 25Vdc)
    Diode Capacitance Temperature Coefficient
    TC C — 300 — ppm/°C
    (V R = 3.0 Vdc, f = 1.0 MHz)

    C T Diode Capacitance Q, Figure of CR, Capacitance


    Merit Ratio
    VR =3.0Vdc, f =1.0MHz
    V R = 3.0Vdc C3 / C 25
    pF f = 50MHz f=1.0MHz (Note 1)
    Device Type Min Nom Max Min Min Max
    MBV109T1, MMBV109LT1, MV209 26 29 32 200 5.0 6.5
    1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc.
    MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.

    MBV109. MMBV109*. MV209*–1/2


    LESHAN RADIO COMPANY, LTD.

    MBV109T1 MMBV109LT1 MV209

    40 1000

    36

    32

    Q , FIGURE OF MERIT
    C T , CAPACITANCE (pF)

    28

    24

    20 100

    16

    12

    4
    10
    0
    1 3 10 30 100 10 100 1000

    V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz )


    Figure 1. Diode Capacitance Figure 2. Figure of Merit

    1.04
    CT,DIODECAPACITANCE(NORMALIZED)

    100

    20 1.03
    I R , REVERSE CURRENT (nA)

    10
    1.02
    2.0
    1.01
    1.0
    1.00
    0.2
    0.1 0.99

    0.02 0.98
    0.01
    0.97
    0.002
    0.001 0.96
    –60 –40 –20 0 20 40 60 80 100 120 140 –75 –50 –25 0 +25 +50 +75 +100 +125

    T A , AMBIENT TEMPERATURE (°C) T A , AMBIENT TEMPERATURE (°C)


    Figure 3 . Leakage Current Figure 4. Diode Capacitance

    NOTES ON TESTING AND SPECIFICATIONS


    1. C R is the ratio of C t measured at 3.0 Vdc divided by C t measured at 25 Vdc.

    MBV109. MMBV109*. MV209*–2/2

    You might also like