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    Silicon NPN Darlington Power Transistor BDW93C: Description

    Uploaded by

    Sergio Brida
    This document provides specifications for the BDW93C silicon NPN Darlington power transistor from INCHANGE Semiconductor. It is in a TO-220 package with very high DC current gain. It can handle continuous collector currents up to 12A and peak currents up to 15A. It is intended for applications such as AC-DC motor control, electronic ignition, and alternator regulation. Key parameters include a collector-emitter saturation voltage below 3V at currents up to 10A and a DC current gain ranging from 100 to 20,000 depending on the collector current.

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    © All Rights Reserved
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    Silicon NPN Darlington Power Transistor BDW93C: Description

    Uploaded by

    Sergio Brida
    39 views2 pages
    This document provides specifications for the BDW93C silicon NPN Darlington power transistor from INCHANGE Semiconductor. It is in a TO-220 package with very high DC current gain. It can handle continuous collector currents up to 12A and peak currents up to 15A. It is intended for applications such as AC-DC motor control, electronic ignition, and alternator regulation. Key parameters include a collector-emitter saturation voltage below 3V at currents up to 10A and a DC current gain ranging from 100 to 20,000 depending on the collector current.

    Original Title

    BDW93C_BCS_NPN_100V_12A_80W

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    This document provides specifications for the BDW93C silicon NPN Darlington power transistor from INCHANGE Semiconductor. It is in a TO-220 package with very high DC current gain. It can handle continuous collector currents up to 12A and peak currents up to 15A. It is intended for applications such as AC-DC motor control, electronic ignition, and alternator regulation. Key parameters include a collector-emitter saturation voltage below 3V at currents up to 10A and a DC current gain ranging from 100 to 20,000 depending on the collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views2 pages

    Silicon NPN Darlington Power Transistor BDW93C: Description

    Uploaded by

    Sergio Brida
    This document provides specifications for the BDW93C silicon NPN Darlington power transistor from INCHANGE Semiconductor. It is in a TO-220 package with very high DC current gain. It can handle continuous collector currents up to 12A and peak currents up to 15A. It is intended for applications such as AC-DC motor control, electronic ignition, and alternator regulation. Key parameters include a collector-emitter saturation voltage below 3V at currents up to 10A and a DC current gain ranging from 100 to 20,000 depending on the collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor

    isc Silicon NPN Darlington Power Transistor BDW93C

    DESCRIPTION
    ·With TO-220 packaging
    ·Very high DC current gain
    ·Monolithic darlington transistor with integrated
    antiparallel collector-emitter diode
    ·Complement to Type BDW94C
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·AC-DC motor control
    ·Electronic ignition
    ·Alternator regulator

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 100 V

    VCEO Collector-Emitter Voltage 100 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 12 A

    ICM Collector Current-Peak 15 A

    IB Base Current- Continuous 0.2 A

    PC Collector Power Dissipation 80 W

    Tj Max.Junction Temperature 150 ℃

    Tstg Storage Temperature Range -65~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W

    isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc Silicon NPN Darlington Power Transistor BDW93C

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 100 V

    VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA 2.0 V

    VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA 3.0 V

    VBE(sat)1 Base-Emitter Saturation Voltage IC= 5A ,IB= 20mA 2.5 V

    VBE(sat)2 Base-Emitter Saturation Voltage IC= 10A ,IB= 100mA 4.0 V

    ICBO Collector Cutoff Current VCB=100V, IE= 0 100 μA

    ICEO Collector Cutoff Current VCE= 100V, IB= 0 1 mA

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA

    hFE-1 DC Current Gain IC= 3A ; VCE= 3V 1000 20000

    hFE-2 DC Current Gain IC= 5A ; VCE= 3V 750 20000

    hFE-3 DC Current Gain IC= 10A ; VCE= 3V 100 20000

    isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark

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