Assembly Technologies for Piezoelectric

Sensors up to 1000 °C

Fabian Kohler, Jürgen Wilde

Laboratory for Assembly and Packaging Technology
University of Freiburg
Department of Microsystems Engineering – IMTEK

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 1
Outline

• Motivation
• State of the art – high temperature materials
• Concept overview
• Implementation
• Design and modelling of the package
• Integration of the assembly
• Platinum wire bonding
• Characterization
• Glas solder connection
• CTE measurement
• Electrical characteristics
• Conclusion
• Outlook

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 2
Motivation

• Assembly Technologies for high-temperature (HT)

sensors up to 1000 °C
• Packaging concepts
• HT stable material choices
• Interconnection techniques
• Minimal thermal mismatch
effects Pressure sensor inside a
diesel
• Insulating properties at high combustion engine
temperatures
© Robert Bosch GmbH

© Robert
2020 IEEE 70th ElectronicBosch GmbH
Components and Technology Conference │ June 3 – June 30, 2020 3
High temperature materials
Application limits of piezoelectric single crystals Operating temperatures of known materials
used in assembly and packaging technology
Upper temperature Max. operating
Piezoelectric materials Comment Technology
limit [°C] temperature [°C]
α-Quartz (SiO2) < 450 Strong damping Al2O3 – based
> 1200
(HTCC)
Congruent LiNbO3 < 300 Decomposition
Glass ceramics
400 – 600
Galliumortho-phosphat (LTCC)
~ 900 Phase transition
(GaPO4)
Glass < 660
Aluminiumnitride (AlN) 1150 Oxidation
Polyimide 240 – 350
Langasit (La3Ga5SiO4) 1470 Damping

CTGS (Ca3TaGa3Si2O14) 1370 Melting point

Oxyborate (e.g. Unknown application
~ 1500
YCa4O(BO3)3) limits

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 4
Implementation - Sensing element
10 mm
• Sensing element
• Piezoelectric Sensor
• Bulk acoustic wave sensor
(BAW), oscillates in thick-
ness direction
• Resonanz spectrum:
5 MHz
• Sputtered platinum
2 mm
electrodes
5 mm

Dimensions of the sensor

Overall CTGS sensor

Cross-section of the sensor

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 5
Concept overview

• Reduction of stress influences

• Realized using saphire and Al2O3
• Sensor: Bulk acoustic wave sensor (BAW)
• CTGS-Resonator (Ca3TaGa3Si2O14)
 Temperature limit 1370 °C

• Thick film platinum contact electrodes

• Melting point platinum: 1768 °C
• Platinum wire bonding 25 µm
• Hermetic protection of the total assembly
 Glas solder connection

• Insulating properties at high temperatures

 Saphire baseplate

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 6
Implementation

• Design of the package

• Fabrication of parts Alumina Glass solder
Materials CTGS
• Saphire base plate (Al2O3) (G018-385)
• Ceramic housing CTE 𝛼 [ppm/K] 8.17 6.4 6.9
• Sensing element (CTGS)
CTE of the materials in the assembly [1]

• Integration of the assembly

• Using glass solder to bond sapphire and
Al2O3 parts
• Screen printing contact electrodes
• Platinum wire bonding
Assembly of the package

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 7
Implementation Sequence

1. Platinum printed sapphire substrate 3. Glass soldering sensor and contacting

via wire bonds

2. Glass soldering of the spacer ring and 4. Closing via sapphire lid
housing ring

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 8
Implementation – Screen Printing

• Screen-printed metallization
• Pt C3620 conductor paste
• Fired at 950 °C
• Pad height ~ 15 µm
• Fine tolerances

Screen printed conductor rail

Squeegee

Pt-Paste
Ag-Pt Paste

Saphire-Substrate
Alumina Substrate

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 9
Implementation – Wire Bonding

• Platinum wire bonding

Wire diameter 25 µm
Bonding weight 27 g
Heating
300 °C
temperature
US power 400 mW
US time 60 ms
Total time 5s

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 10
Implementation – Wire Bonding

• Platinum wire bonding

Bond foot area:
• 81,5 µm in length
• 30,3 µm in width

Bondfoot produced with cross grooved wedge

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 11
Characterization – Glas Solder

• Metallography cross-section analysis

• Glass solder G18-385 (Schott AG) Good wetting of the sapphire
• Temperature stable up to 1000 °C
• Cured at 950 °C for 30 min

Sapphire

Glas solder

5 µm

Connection of glass soldered sapphire, left: light microscope image, right: scanning electron microscope image
2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 12
Characterization – Thermal Expansion

• DIC measurement of thermal expansion

• DIC specimen preparation: coated with stochastic pattern PID
• Heated from 30 °C to 310 °C, 20 °C steps controller
Camera
• Reference image at 30 °C, target images at elevated
s
temperature
Sample
Laminar
flow
Vacuum
Thermal pump
chamber

DIC specimen: Saphire sample coated

with stochastic pattern
DIC color map of the expanded saphire sample at 310 °C
2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 13
Characterization – Thermal Expansion

• Thermal expansion of the sapphire

Displacement x in µm

 in mm/mm
Cut length x in mm T in °C
Displacements of the cut length x along Elongation  over temperature of the
x-direction sapphire

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 14
Characterization

• CTE analysis
• Sapphire substrate
• Al2O3 rings

Saphire, 650 µm thickness Al2O3-Ring, 1,6 mm thickness

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 15
Electrical characteristics

• Test setup:
• Sputtered Platinum comp structure on sapphire wafer
• Mechanical clamp contact
• Heating up in a ThermoConcept oven KL 03/11

Specimen Mechanical clamping device Oven KL 03/11 LCR meter Agilent 1733c

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 16
Characterization

• Capacitance measurement and specific resistance

Capacity curve of the platinum comb Specific surface resistance of the sapphire
structure on the sapphire wafer wafer based on a 3-point measurement

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 17
Package Concept

 Saphire substrate for isolating

properties at high temperatures
 Al2O3 housing ring
 Screen printed platinum
conductor trails
 Glass solder for the connection
of the ceramic components

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 18
Conclusion

• Summary
• Stress tolerant packaging concept
• Design and implementation
• Analysis of thermal expansion
• Fabrication of assembly parts
• Integration of the package
• Electrical properties of the selected materials
• Outlook
• Device under test up to 1000 °C
• Characterization of the damping through the housing

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 19
Acknowledgement

Thank you for your attention!

The authors gratefully thank the

Deutsche Forschungsgemeinschaft DFG
for financing und supporting this research project.

Further thanks goes to our supporting partners:

Schott AG
Heraeus Deutschland GmbH & Co. KG

2020 IEEE 70th Electronic Components and Technology Conference │ June 3 – June 30, 2020 20