ME 4733: Deformation and Fracture of Engineering Materials

Download as pdf or txt
Download as pdf or txt
You are on page 1of 7

ME 4733: Deformation and Fracture of

Engineering Materials
Spring 2002

Problem Set 4 (Wednesday, 2/13)

1) Hertzberg, 2.1
Demonstrate mathematically that dislocations at the head of a pileup will not combined to
form a super dislocation with a Burgers vector of nb where n = 2, 3, 4, …, n.

Solution:
This question is actually asking why the following dislocation with Burgers
vector 2b (or > 2b) does not exist?

Dislocation can only exist in a single form like the following or as partial dislocation with
Burgers vector less than b.

Answer 1 (force approach):

The inter-dislocation force is proportional to 1/d , where d is the distance between


the two dislocations. This repulsive force can be very big when two dislocations are too
close to each other. Thus when two or more dislocations are combined together, they are
unstable. So dislocations at the head of a pileup will not combined to form a super
dislocation with a Burgers vector of nb.

Answer 2 (energy approach):


The energy of a single dislocation is αb 2 , where α is a constant. Thus n
independent dislocations will have a total energy of nαb 2 .
If these dislocations were to form a giant dislocation with Burgers vector nb, the
total energy will be α ( nb) 2 which is obviously much greater than that associated with
separate dislocations. Therefore, these dislocations will not combine.

2) Hertzberg, 2.2
Consider the following face-centered-cubic dislocation reaction
a a a
[110] → [21 1 ] + [121]
2 6 6
(a) Prove that the reaction will occur.
a
(b) What kind of dislocations are the < 121 > ?
6
(c) What kind of crystal imperfection results from this dislocation reaction?
a a
(d) What determines the distance of separation of the [21 1 ] and the [121]
6 6
dislocations?

Solution:

a
(a) The likelihood that dislocation [110] will dissociate into two Shockley partial
2
a a
dislocations [21 1 ] and [121] depends on whether the sum of the elastic energies of
6 6
the dissociated dislocations is lower than the elastic energy associated with original one.

The energy of a dislocation can be written as


E = αGb 2 (Hertzburg 2-17)
Since
 1 2  1 2 1
  +  =
 2  2 2
 1 2  1 2  2 2  1 2  1 2  1 2  2 2  1 2 1
  +  =  +  +  +  +  +  =
 2  2  6  6  6  6  6  6 3

1 1
∴ > , the dislocation reaction will occur.
2 3

a
(b) < 121 > are partial dislocations.
6

(c) This crystal imperfection results from this dislocation reaction is staking fault.
(d) The distance of separation, d, depends inversely on the magnitude of stacking fault
energy, i.e.,
a a
(2,1, −1) ⋅ (1, 2,1)
b1 ⋅ b2 Ga 2
d=G =G 6 6 =
2πγ 2πγ 24 πγ
where γ is the stacking fault energy, G is the shear modulus.
3) Hertzberg 2.5
Why do dislocation loops tend to be circular? Why, then, are they angular for silicon as
shown in Fig. 2.30a?

Solution:
An applied stress produces a normal force τb on the dislocation and makes the
dislocation bulge.

The dislocation line tends to lie along specific directions in which they have a minimum
energy indicating the strong anisotropy of the material.

Note:
Mixed dislocation and dislocation loop.

4) The following picture is from Hertzberg figure 2.18.


From the picture, the slip offsets are clearly visible and they must be in the range of 1µm
in the height. Since the typical Burgers vector for a dislocation is on the order of 2 to
3 × 10−10 m , there is a requirement for approximately 10 4 dislocations on each slip plane
to create the slip step. That so many dislocations of the same sign should lie on the same
plane before the crystal is stressed is highly unlikely. Explain why it is unlikely.

Solution:

The average distance between the neighboring two dislocations is


1µm
= 10−10 m
10 4
which is even smaller than the length of a Burgers vector, which is 2 to 3 × 10−10 m . This
is unreasonable, so this high density of dislocation before being stressed is unlikely.

5) The stress field surrounding an edge dislocation is given in Hertzberg, equations


2-13. Considering the repelling force of dislocations against each other, make a simple
model of a dislocation array in a crystal and use it to derive an expression for the increase
in yield strength as a function of dislocation density.

Solution:
In the above simplified model, we take the averaged distance between two adjacent
dislocations as a. The dislocation density can thus be expressed as
1
ρ= 2
a
Denote the increase in yield strength as σ ysD .

Let’s try to find the shear stress acting on the dislocation at ( x, y ) . The dislocation at
( na, ma) has a contribute as

Gb( na − x ) ( na − x ) 2 − ( ma − y ) 2
τ ( m ,n )
= ⋅
2π (1 − ν ) ( na − x ) 2 + ( ma − y ) 2
xy

+∞
τ xy = ∑τ ( m ,n )
xy =
Gb
2π (1 − ν )
f ( x, y )
m , n =−∞
where
+∞
( n − x / a) 2 − ( m − y / a) 2
f ( x, y ) = ∑ ( n − x / a)
( n − x / a) 2 + ( m − y / a) 2
m , n =−∞

is a periodic function in a square of size a.

Take the maximum absolute value of this period function as α .


α = max f ( x, y ), x ∈ [0, a], y ∈ [0, a]

We can have the increase in yield strength σ ysD , which comes from the interactions with
the dislocation array, as

αGb 1 αGb
τ ysD = τ xyA = = ρ
2π (1 − ν ) a 2π (1 − ν )

You might also like