2N7000

N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BVDSS / RDS(ON) ID(ON) Order Number / Package
BVDGS (max) (min) TO-92
60V 5.0Ω 75mA 2N7000

Features Advanced DMOS Technology

■ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
■ Low power drive requirement
manufacturing process. This combination produces devices with
■ Ease of paralleling the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
■ Low CISS and fast switching speeds
ent in MOS devices. Characteristic of all MOS structures, these
■ Excellent thermal stability devices are free from thermal runaway and thermally-induced
■ Integral Source-Drain diode secondary breakdown.

■ High input impedance and high gain Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
■ Complementary N- and P-channel devices down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.

Applications
■ Motor controls
■ Converters
Package Options
■ Amplifiers
■ Switches
■ Power supply circuits
■ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage BVDSS SGD
Drain-to-Gate Voltage BVDGS TO-92
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

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 2N7000

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TC = 25°C °C/W °C/W
TO-92 200mA 500mA 1W 125 170 200mA 500mA
* ID (continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V ID = 10µA, VGS = 0V
VGS(th) Gate Threshold Voltage 0.8 3.0 V VGS = VDS, ID = 1mA
IGSS Gate Body Leakage 10 nA VGS = ±15V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µA VGS = 0V, VDS = 48V
1 mA VGS = 0V, VDS = 48V
TA = 125°C
ID(ON) ON-State Drain Current 75 mA VGS = 4.5V, VDS = 10V
RDS(ON) Static Drain-to-Source ON-State Resistance 5.3 Ω VGS = 4.5V, ID = 75mA
RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 Ω VGS = 10V, ID = 0.5A
Ω
GFS Forward Transconductance 100 m VDS = 10V, ID = 0.2A
CISS Input Capacitance 60
COSS Common Source Output Capacitance 25 pF VGS = 0V, VDS = 25V
f = 1 MHz
CRSS Reverse Transfer Capacitance 5
t(ON) Turn-ON Time 10 VDD = 15V, ID = 0.5A,
ns
t(OFF) Turn-OFF Time 10 RGEN = 25Ω
VSD Diode Forward Voltage Drop 0.85 V ISD = 0.2A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

VDD

10V RL
90% PULSE
INPUT GENERATOR
OUTPUT
0V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

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 2N7000

Typical Performance Curves

Output Characteristics Saturation Characteristics
2.5 2.5
VGS =10V

VGS = 10V
2.0 8V 2.0

8V
ID (amperes)

1.5 1.5

ID (amperes)
6V
6V

1.0 1.0

0.5 4V 0.5 4V

0 0
0 10 20 30 40 50 0 2 4 6 8 10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

1.0 2.0

VDS = 25V
0.8
GFS (siemens)

0.6
PD (watts)

TO-92
1.0
TA = -55°C
0.4 25°C

125°C
0.2

0 0
0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150
ID (amperes) TC (°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

1.0 1.0
Thermal Resistance (normalized)

TO-92 (pulsed)
0.8
TO-92 (DC)
0.1
ID (amperes)

0.6

0.4
0.01

TO-92
0.2
PD = 1W
TC = 25°C
TC = 25°C
0.001 0
0.1 1.0 10 100 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

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 2N7000

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
5.0

1.1
VGS = 4.5V
4.0
BVDSS (normalized)

RDS(ON) (ohms)
VGS = 10V
3.0

1.0

2.0

1.0

0.9

0
-50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5
Tj (°C) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

2.5 1.6 1.9
VDS = 25V

2.0 TA = -55°C 1.4 1.6

RDS @ 10V, 1.0A

RDS(ON) (normalized)
VGS(th) (normalized)

25°C
ID (amperes)

1.2 1.3
1.5
V(th) @ 1mA
125°C

1.0 1.0
1.0

0.8 0.7
0.5

0 0.6 0.4
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj(°C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

100 10

f = 1MHz
VDS = 10V
8
75
40V
C (picofarads)

VGS (volts)

50
80 pF
4
CISS

25 COSS
2

CRSS 40 pF
0 0
0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0
VDS (volts) QG (nanocoulombs)

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