BCP56 Series,

SBCP56 Series

NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223 http://onsemi.com
package, which is designed for medium power surface mount
applications. MEDIUM POWER NPN SILICON
Features HIGH CURRENT TRANSISTOR
• High Current: 1.0 A SURFACE MOUNT
• The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die COLLECTOR 2,4
• Available in 12 mm Tape and Reel
Use BCP56T1 to Order the 7 inch/1000 Unit Reel BASE
Use BCP56T3 to Order the 13 inch/4000 Unit Reel 1
• PNP Complement is BCP53T1
EMITTER 3
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 1
2
3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit SOT−223
CASE 318E
Collector−Emitter Voltage VCEO 80 Vdc
STYLE 1
Collector−Base Voltage VCBO 100 Vdc
Emitter−Base Voltage VEBO 5 Vdc
MARKING DIAGRAM
Collector Current IC 1 Adc
Total Power Dissipation PD
@ TA = 25°C (Note 1) 1.5 W
Derate above 25°C 12 mW/°C AYW
xxxxxG
Operating and Storage TJ, Tstg −65 to 150 °C G
Temperature Range
1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
xx = Specific Device Code
Thermal Resistance, RqJA 83.3 °C/W
A = Assembly Location
Junction−to−Ambient
Y = Year
(surface mounted)
W = Work Week
Maximum Temperature for TL G = Pb−Free Package
Soldering Purposes 260 °C (Note: Microdot may be in either location)
Time in Solder Bath 10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the See detailed ordering and shipping information in the package
Recommended Operating Conditions may affect device reliability. dimensions section on page 2 of this data sheet.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

November, 2011 − Rev. 8 BCP56T1/D
 BCP56 Series, SBCP56 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage V(BR)CBO 100 − − Vdc
(IC = 100 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage V(BR)CEO 80 − − Vdc
(IC = 1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current ICBO − − 100 nAdc
(VCB = 30 Vdc, IE = 0)
Emitter−Base Cutoff Current IEBO − − 10 mAdc
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 5.0 mA, VCE = 2.0 V) All Part Types 25 − −
(IC = 150 mA, VCE = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3 40 − 250
BCP56−10T1, SBCP56−10T1 63 − 160
BCP56−16T1, SBCP56−16T1, SBCP56−16T3 100 − 250
(IC = 500 mA, VCE = 2.0 V)All Types 25 − −
Collector−Emitter Saturation Voltage VCE(sat) − − 0.5 Vdc
(IC = 500 mAdc, IB = 50 mAdc)
Base−Emitter On Voltage VBE(on) − − 1.0 Vdc
(IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT − 130 − MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%

ORDERING INFORMATION
Device Marking Package Shipping†
BCP56T1G BH SOT−223 1000 / Tape & Reel
(Pb−Free)
SBCP56T1G
BCP56T3G BH SOT−223 4000 / Tape & Reel
(Pb−Free)
SBCP56T3G
BCP56−10T1G BH−10 SOT−223 1000 / Tape & Reel
(Pb−Free)
SBCP56−10T1G
BCP56−16T1G BH−16 SOT−223 1000 / Tape & Reel
(Pb−Free)
SBCP56−16T1G
BCP56−16T3G BH−16 SOT−223 4000 / Tape & Reel
(Pb−Free)
SBCP56−16T3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 BCP56 Series, SBCP56 Series

TYPICAL ELECTRICAL CHARACTERISTICS

1000

TJ = 125°C
hFE, DC CURRENT GAIN

TJ = 25°C
100
TJ = - 55°C

10
1 10 100 1000
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

T CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)

1000 80
60
TJ = 25°C
40
C, CAPACITANCE (pF)

Cibo

20
100

10
8.0
6.0 Cobo
10 4.0
f,

1.0 10 100 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance

1 1.2
IC/IB = 10 1.1 IC/IB = 10
VCE(sat), COLLECTOR−EMITTER

150°C
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

1.0
VBE(sat), BASE−EMITTER

25°C
0.9
−55°C
0.8
0.1 −55°C 0.7 25°C
0.6
0.5
150°C
0.4
0.3
0.01 0.2
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current

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 BCP56 Series, SBCP56 Series

TYPICAL ELECTRICAL CHARACTERISTICS

1.2 1.0
VBE(on), BASE−EMITTER VOLTAGE (V)

VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)

1.1 VCE = 2 V TJ = 25°C

1.0 0.8
0.9 −55°C
IC = 10mA 50 100mA 250mA 500mA
0.8 0.6
mA
25°C
0.7
0.6 0.4
0.5 150°C
0.4 0.2

0.3
0.2 0
0.001 0.01 0.1 1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector Figure 7. Collector Saturation Region
Current

1 1.6
1 mS
1S 1.4
IC, COLLECTOR CURRENT (A)

PD, POWER DISSIPATION (W)

100 mS 1.2

10 mS 1.0

0.1 0.8

0.6

0.4

0.2

0.01 0.0
0.1 1 10 100 0 20 40 60 80 100 120 140 160
VCE, COLLECTOR EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

Figure 8. Safe Operating Area Figure 9. Power Derating Curve

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 BCP56 Series, SBCP56 Series

PACKAGE DIMENSIONS

SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.

4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 −−− −−− 0.008 −−− −−−
C L1 1.50 1.75 2.00 0.060 0.069 0.078
q HE 6.70 7.00 7.30 0.264 0.276 0.287
A q 0° − 10° 0° − 10°
0.08 (0003) STYLE 1:
A1 L L1 PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

SOLDERING FOOTPRINT*
3.8
0.15

2.0
0.079

6.3
2.3 2.3
0.248
0.091 0.091

2.0
0.079

1.5 SCALE 6:1 ǒinches

mm Ǔ
0.059

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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