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    Datasheet 2sc3052 SMD

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    ed pwt
    The document summarizes the specifications of a SOT-23 plastic-encapsulated NPN transistor (2SC3052). Key specifications include: 1. Maximum power dissipation of 0.15W at 25°C ambient temperature. 2. Collector current rating of 0.2A. 3. Operating and storage temperature range of -55°C to +150°C. 4. Electrical characteristics including collector-base breakdown voltage of 50V, DC current gain of 150-800, and transition frequency of 180MHz.

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    Datasheet 2sc3052 SMD

    Uploaded by

    ed pwt
    191 views1 page
    The document summarizes the specifications of a SOT-23 plastic-encapsulated NPN transistor (2SC3052). Key specifications include: 1. Maximum power dissipation of 0.15W at 25°C ambient temperature. 2. Collector current rating of 0.2A. 3. Operating and storage temperature range of -55°C to +150°C. 4. Electrical characteristics including collector-base breakdown voltage of 50V, DC current gain of 150-800, and transition frequency of 180MHz.

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    The document summarizes the specifications of a SOT-23 plastic-encapsulated NPN transistor (2SC3052). Key specifications include: 1. Maximum power dissipation of 0.15W at 25°C ambient temperature. 2. Collector current rating of 0.2A. 3. Operating and storage temperature range of -55°C to +150°C. 4. Electrical characteristics including collector-base breakdown voltage of 50V, DC current gain of 150-800, and transition frequency of 180MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    191 views1 page

    Datasheet 2sc3052 SMD

    Uploaded by

    ed pwt
    The document summarizes the specifications of a SOT-23 plastic-encapsulated NPN transistor (2SC3052). Key specifications include: 1. Maximum power dissipation of 0.15W at 25°C ambient temperature. 2. Collector current rating of 0.2A. 3. Operating and storage temperature range of -55°C to +150°C. 4. Electrical characteristics including collector-base breakdown voltage of 50V, DC current gain of 150-800, and transition frequency of 180MHz.

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    of 1

    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    SOT-23 Plastic-Encapsulate Transistors

    SOT-23
    2SC3052 TRANSISTOR (NPN) 1. BASE
    2. EMITTER
    3. COLLECTOR
    FEATURES

    1. 0
    Power dissipation
    2. 4
    PCM: 0.15 W (Tamb=25℃) 1. 3

    Collector current

    0. 95
    2. 9
    ICM: 0.2 A

    1. 9
    Collector-base voltage

    0. 4
    V (BR) CBO: 50 V

    0. 95
    Operating and storage junction temperature range Unit: mm

    TJ, Tstg: -55℃ to +150℃


    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
    Parameter Symbol Test conditions MIN MAX UNIT

    Collector-base breakdown voltage V (BR) CBO IC = 100 µA, IE=0 50 V

    Collector-emitter breakdown voltage V (BR) CEO IC = 100 µA, IB=0 50 V

    Emitter-base breakdown voltage V (BR) EBO IE= 100 µA, IC=0 6 V

    Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 µA

    Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 µA

    hFE(1) VCE= 6V, IC= 1mA 150 800


    DC current gain
    hFE(2) VCE= 6V, IC= 0.1mA 50

    Collector-emitter saturation voltage VCE (sat) IC=100mA, IB= 10mA 0.3 V

    Base-emitter saturation voltage VBE (sat) IC= 100mA, IB= 10mA 1 V

    Transition frequency fT VCE= 6V, IC= 10mA 180 MHz

    Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 4 pF

    Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ 15 dB

    CLASSIFICATION OF hFE(1)
    Rank E F G

    Range 150~300 250~500 400~800

    Marking LE LF LG

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