UNISONIC TECHNOLOGIES CO.

, LTD
MMBT1116/A PNP SILICON TRANSISTOR

PNP EPITAXIAL SILICON

TRANSISTOR
3
 DESCRIPTION
Complement to UTC MMBT1616/A 1
2
SOT-23

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
MMBT1116L-x-AE3-R MMBT1116G-x-AE3-R SOT-23 E B C Tape Reel
MMBT1116AL-x-AE3-R MMBT1116AG-x-AE3-R SOT-23 E B C Tape Reel

 MARKING

11A L: Lead Free

G: Halogen Free

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MMBT1116/A PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25C,unless otherwise specified )

PARAMETER SYMBOL RATINGS UNIT
MMBT1116 -60
Collector to Base Voltage VCBO V
MMBT1116A -80
MMBT1116 -50
Collector to Emitter Voltage VCEO V
MMBT1116A -60
Emitter to Base Voltage VEBO -6 V
DC IC -1 A
Collector Current
Pulse(Note2) ICM -2 A
Total Power Dissipation PC 350 mW
Junction Temperature TJ +150 C
Storage Temperature TSTG -55 ~ +150 C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Saturation
VCE(SAT) IC=-1A, IB=-50mA -0.2 V
Voltage(Note)
Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=-1A, IB=-50mA -0.9 -1.2 V
Base Emitter On Voltage(Note) VBE(ON) VCE=-2V, IC=-50mA -600 -650 -700 mV
Collector Cut-Off Current ICBO VCB=-60V, IE=0 -100 nA
Emitter Cut-Off Current IEBO VEB=-6V, IC=0 -100 nA
VCE=-2V, MMBT1116 135 600
hFE1
DC Current Gain(Note) IC=-100mA MMBT1116A 135 400
hFE2 VCE=-2V, IC=-1A 81
Transition Frequency fT VCE=-2V, IC=-100mA 70 120 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 25 pF
VCC=-10V, IC=-100mA
Turn On Time tON 0.07 μs
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V
Storage Time tSTG 0.7 μs
Fall Time tF 0.07 μs
Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%
 CLASSIFICATION OF hFE1
RANK Y G L
hFE1 135 ~ 270 200 ~ 400 300 ~ 600

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MMBT1116/A PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS

Static Characteristic Static Characteristic

-100 -1.0
IB=-250μA IB=-5.0mA IB=-4.5mA IB=-4.0mA
IB=-200μA IB=-3.5mA
Collector Current, Ic (mA)

-80 -0.8 IB=-3.0mA

Collector Current, Ic (A)

IB=-2.5mA
IB=-150μA
-60 -0.6
IB=-2.0mA
IB=-100μA
-40 -0.4 IB=-1.5mA

IB=-50μA IB=-1.0mA
-20 -0.2
IB=-0.5mA
0 0.0
0 -2 -4 -6 -8 -10 0.0 -0.2 -0.4 -0.6 -0.8 -1.0
Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V)

Base-Emitter Saturation Voltage

DC Current Gain Collector-Emitter Saturation Voltage
Saturation Voltage, VBE(sat), VCE(sat) (V)

1000 -10
VCE=-2V IC=20IB
DC Current Gain, hFE

-1 VBE(sat)
100

-0.1
10

VCE(sat)
1 -0.01
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10
Collector Current, Ic (mA) Collector Current, IC (A)
Time, tON, tSTG, tF (μs)

Capacitance, Cob (pF)

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MMBT1116/A PNP SILICON TRANSISTOR

 TYPICAL CHARACTERISTICS(Cont.)

Current Gain Bandwidth Product Safe Operating Area

1000 -10
VCE=-2V 10
m
s
200ms PW
100 -1 =1
m
s

DC
10 -0.1

1 -0.01
-0.01 -0.1 -1 -10 -1 -10 -100
Collector Current, IC (mA) Collector-Emitter Voltage, VCE (V)
Power Dissipation, PC (W)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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