SCHOOL OF ELECTRICAL ENGINEERING

(SELECT)

Lab Manual

of

EEE102 - SEMICONDUCTOR DEVICES AND CIRCUITS

for

B. Tech. Winter Semester 2015

 TABLE OF CONTENTS

SIMULATION USING PSPICE

LIST OF EXPERIMENTS

1. a) V-I Characteristics of P-N Junction diode

b) V-I Characteristics of Zener diode

2. Diode Applications - Half Wave and Full Wave rectifier with and

without filter

3. Diode Applications - Clipper and Voltage Doubler Circuits

4. Characteristics of a Bipolar Junction Transistor Common base

configuration

5. Common Emitter Amplifier

6. Characteristics of Field Effect Transistor

7. Common Source Junction Field Effect Transistor Amplifier

VALUE –ADDITION EXPERIMENTS

8. Astable Multivibrator

9. Schmitt Trigger

APPENDIX

A. Resistor Colour Codes

B. Breadboard Tutorial
 SIMULATION USING PSPICE

Procedure: common to all circuits

1. Open Orcad-capture.

2. Go to File tab and click on "New project" and give an approriate name.

3. Select "Analog or Mixed A/D". Select the Location where you want to save your files.

4. Connect the circuits as per the circuit diagram given in Experiment from the parts

library and save the schematic. Do not connect measuring instruments in the Orcad-

Pspice schematic.

5. Go to Pspice in the menu and select new simulation profile and give appropriate

simulation name and click on create. Simulation settings window will be displayed.

6. Select the appropriate analysis type and set the variables accordingly.

7. Run the simulation using F11 or run command in the PSPICE menu.

8. Obtain the graph corresponding to the experiment.

 EXPERIMENT NO.1.a

V - I CHARACTERISTICS OF A PN JUNCTION DIODE

AIM:

To determine the V - I characteristics of a PN Junction diode.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30V) DC 1

2. PN Junction diode 1N4007 1

3. Resistor 1kΩ 1
(0-100mA)MC,
4. Ammeters 1
(0-250μA)MC
(0-1V) MC,
5. Voltmeter 1
(0-10V)MC
6. Breadboard 1

CIRCUIT DIAGRAM:

Forward Biased PN Junction diode

 Reverse Biased PN Junction diode

MODEL GRAPH:

VI characteristics under Forward Biased PN Junction diode

 VI characteristics under Reverse Biased PN Junction diode

PROCEDURE:

Forward biasing:
1. Connections are made as per the circuit diagram.
2. The supply voltage is increased gradually and readings of the
voltage drop across the diode and the diode current are noted from
voltmeter and ammeter.
3. Draw the graph between the voltage across the diode and the
current flowing through the diode.
Reverse biasing:

1. Connections are made as per the circuit diagram.

2. The supply voltage is increased gradually and readings of the
voltage drop across the diode and the diode current are noted from
voltmeter and ammeter.
3. Draw the graph between the voltage across the diode and the
current flowing through the diode.
OBSERVATION:

Table. 1: VI characteristics of Table. 2: VI characteristics of

Forward biased PN junction diode Reverse bias PN junction diode

S.No V I S.No V I

RESULT:
Thus the VI characteristics of the forward and reverse biased PN junction diode
were studied.
 EXPERIMENT NO.1.b
V - I CHARACTERISTICS OF A ZENER DIODE

AIM:

To determine the V - I characteristics of a Zener diode.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30V) DC 1

2. Zener diode 5Z6 1

3. Resistor 1kΩ 1
(0-50mA)MC,
4. Ammeters 1
(0-1V) MC,
5. Voltmeter 1
(0-10V)MC
6. Breadboard 1

CIRCUIT DIAGRAM:

Circuit Diagram under Forward Biased Zener diode

 Circuit Diagram under Reverse Biased Zener diode
MODEL GRAPH:

VI characteristic under Forward Biased Zener diode

 VI characteristic under Reverse Biased Zener diode
PROCEDURE:

Forward biasing:
1. Connections are made as per the circuit diagram.
1. The supply voltage is increased gradually and readings of the
voltage drop across the diode and the diode current are noted from
voltmeter and ammeter.
2. Draw the graph between the voltage across the diode and the
current flowing through the diode.
Reverse biasing:

1. Connections are made as per the circuit diagram.

2. The supply voltage is increased gradually and readings of the
voltage drop across the diode and the diode current are noted
from voltmeter and ammeter.
3. Draw the graph between the voltage across the diode and the
current flowing through the diode.
OBSERVATION:

Table. 1: VI characteristics of Forward Table. 2: VI characteristics of

bias Zener diode Reverse bias Zener diode

S.No V I S.No V I

RESULT:
Thus the VI characteristics of the forward and reverse biased zener diode were
studied.
 EXPERIMENT NO.2

DIODE APPLICATIONS - HALF WAVE RECTIFIER AND

FULL WAVE RECTIFIER WITH AND WITHOUT FILTER

AIM:
To rectify the given input AC signal and to visualize the output waveform in a
CRO for Half wave and Full wave rectifier with and without filters and to calculate the
ripple factor.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. PN Junction diode 1N4007 4

2. Resistor 1kΩ 1

3. Transformer 230/12V 1

4. Electrolytic Capacitor 1μF,10μF 1

5. Breadboard 1

6. CRO 1

FORMULAE:
Half Wave Rectifier(without filter) Full Wave Rectifier (without filter)

Vrms= Vm/2 Vrms=Vm/√2

Vdc= Vm/Π Vdc= 2Vm/Π

Half and Full Wave Rectifier with filter

V’rms = Vrpp / 2√3
Vdc =Vm – (Vrpp/2)

Ripple factor(without filter) γ = √((Vrms/Vdc)2-1)

Ripple factor (with filter) γ = V’rms/ Vdc

Where γ = Ripple factor.

Vdc = average value of voltage
V’rms = rms value of the ripple voltage.
Vrpp = peak to peak ripple voltage.
CIRCUIT DIAGRAM:

Half wave Rectifier without Filter

Half wave Rectifier with Filter

Full wave Rectifier without filter

 Full wave Rectifier with filter
MODEL GRAPH:

Input Supply Voltage

Output Voltage of Half wave Rectifier with and without filter

Output Voltage of Full wave Rectifier with and without filter

Procedure:
1. Connections are made as per the circuit diagram
2. Observe the voltage using CRO across the load resistance with and without filter
capacitor.
3. Repeat step 3 with different values of filter capacitor.
4. Calculate the ripple factor for the obtained waveforms.

Result:
Thus the working of the half wave rectifier and full wave bridge rectifier with and
without filter was studied.
 EXPERIMENT NO.3

DIODE APPLICATIONS - CLIPPER AND VOLTAGE DOUBLER CIRCUITS

AIM:
To study the diode clipper and voltage doubler circuits and observe waveforms at
the output.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. PN Junction diode 1N4007 2

2. Resistor 1kΩ 1

3. Transformer 230/12V 1

4. Electrolytic Capacitor 10μF 1

5. Breadboard 1

6. CRO 1

CIRCUIT DIAGRAMS:

Positive Series Clipper

Negative Series Clipper

Positive Shunt Clipper

Negative Shunt Clipper

Combination Clipper
 Voltage Doubler

Model Graph:

Input Voltage

Output voltage
Positive clipper Negative clipper
 Combination clipper Voltage doubler

Procedure:

1. Take the circuit elements.

2. On the breadboard, connect the circuit as per the circuit diagram.
3. Observe the voltage using CRO.
4. In the various circuits, see the output voltage.

Result:

Thus, the working of the Clipper and Voltage Doubler Circuit was studied.
 EXPERIMENT NO.4

CHARACTERISTICS OF A BIPOLAR JUNCTION TRANSISTOR

COMMON BASE CONFIGURATION

AIM:

To study the characteristics of a Bipolar Junction Transistor in common base

configuration.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30)v 2
2. Transistor 1
3. Resistors 1kΩ 1
68kΩ 1
4. Ammeters (0- 1
50)mA 1
(0-50)µA
5. Voltmeter (0-2)v 1
(0-30v 1

FORMULAE:

1. α = (Δ IC / Δ IE) at VCB constant

2. hie = (Δ VEB / Δ IE) at VCB constant

3. hoe = (Δ IC / Δ VCB) at IE constant

Where IC = collector current

IE = Emitter current
α = current gain
VCB = Voltage between collector and base
VEB = Voltage between emitter and base
hie = Input impedance
hoe = Output admittance.
Circuit Diagram:

(0-50) µA (0-50) mA
68KΩ 1KΩ
E C
_ _
+ +
A A

+
+
+ B
(0-30)V (0-30)V
RPS V V DC
RPS
+
(0-2)V (0-30)V
DC MC

Base Diagram:

C
Model Graphs:

Input Characteristics

IE
( mA) VCB2 VCB1

VCB2 >VCB1

VBE

Output Characteristics

IC
(mA) IE3> IE3> IE3
Saturation
region

IE3
Active region
IE2

IE1
Cut off region

VEB
PROCEDURE:

Input Characteristics:
1. Connections are made as per the circuit diagram.
2. The collector-base voltage is kept constant
3. The base-emitter voltage is varied and corresponding readings of
the emitter current are noted.

Output Characteristics:

1. Connections are made as per the circuit diagram.

2. The emitter current is kept constant
3. The collector- base voltage is varied and corresponding readings of
the collector current are noted.

OBSERVATION:

Table 1

Input Characteristics

VCB1(v) VCB2(v)
S.no.
VEB (v) IE (mA) VEB (v) IE (mA)

Table 2

Output Characteristics

IE1 (mA) IE2 (mA)

S.no.
VCB (v) IC (mA) VCB (v) IC (mA)

Result:

Thus, the characteristics of a Bipolar Junction Transistor in common base

configuration are studied.
 EXPERIMENT NO.5
COMMON EMITTER AMPLIFIER

AIM:

To design and construct a common emitter amplifier and to draw the frequency
response characteristics and to obtain the bandwidth.

APPARATUS REQUIRED:

S.No Name of the component Range Quan

tity
1. Function generator 1
2. Transistor 1
3. Resistors 1kΩ 1
68kΩ 1
4. capacitors (0-50)mA 1
(0-50)µA 1
5. CRO (0-2)v 1
(0-30v 1

FORMULAE:

1. RC = (AV hie) / hfe.

Where-
RC–Collector Resistance
AV –Voltage Gain

2. RE = (VCC-VCE-ICRC) / IE (IE ~ Ic)

Where-
RE–Emitter Resistance
VCC–Supply voltage
IE –Emitter current
IC –Collector current
VCE –Collector to Emitter Voltage

3. S = { [(1+ hfe)( 1+ (RB/RE)] / [1+ hfe+(RB /RE)] }

Where-
RB–Base Resistance
hfe-forward current gain
hie-input impedance

4. VB = VBE+IERE
Where-
VB–Base voltage
 RE–Emitter Resistance
VBE–Base to emitter voltage

5. R1 = (VCC RB) / VB
6. R2 = (VCC RB) / (VCC_- VB)
7. XCE << RE , XCE = RE / 10
8. XCC >> Ri , XCC = Ri / 10
9. AV =VO/Vi
Where-
AV –Voltage Gain
Vo-output voltage
Vi-input voltage

10. Gain = 20 log 10(AV)

11. 3db line calculation = 20 log(Av(max)*√2/2)

CIRCUIT DIAGRAM:

BASE DIAGRAM:
MODEL GRAPH:

PROCEDURE:

1. The circuit is designed and connections are made as per the circuit
diagram.
2. Using the function Generator the input voltage and frequency are
set to a suitable value.
3. The frequency of the signal is increased and the output waveform
is obtained.
4. The output voltage is measured for various frequencies.
5. Gain in dB is calculated and Band Width is obtained from the
frequency response characteristics.

OBSERVATION:

Table

RESULT:
Thus, the frequency response characteristic of common emitter amplifier is drawn
and the bandwidth is obtained.
 EXPERIMENT NO.6

CHARACTERISTICS OF FIELD EFFECT TRANSISTOR

AIM:

To study the characteristics of Field Effect Transistor.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30)v 2
2. JFET 1
3. Resistors 1kΩ 1
68kΩ 1
4. Ammeters (0-50)mA 1
(0-50)µA 1
5. Voltmeter (0-2)v 1
(0-30v 1

FORMULAE:

1. rD = (Δ VDS / Δ ID) at VGS constant

2. gM = (Δ VGS / Δ ID) at VDS constant

3. μ = rD x gM

Where rD = Drain Resistance

μ = amplification factor
gM = Trans conductance
VDS = Drain to source voltage
VGS = Gate to Source voltage
ID = Drain Current
CIRCUIT DIAGRAM:

(0-30) mA
1KΩ

BFW10
D
+ +

G V
+ + S
(0-30)V (0-30)V
DC V (0-30)V DC
RPS MC RPS
(0-30)V
MC

BASE DIAGRAM:

shield D

G
MODEL GRAPH:

TransferCharacteristics

ID
(mA)

VDS1

VDS2

VGS

VP

Drain Characteristics

Ohmic Pinch off

ID region Region
Break down region
(mA)

VDS
PROCEDURE:

Drain Characteristics

1. Connections are made as per the circuit diagram.

2. The Gate-Source voltage is kept constant
3. The Drain-Source voltage is varied and corresponding readings of
the Drain current are noted.

Transfer Characteristics

1. Connections are made as per the circuit diagram.

2. The Drain-Source voltage is kept constant.
3. The Gate - Source voltage is varied and corresponding readings of
the Drain current are noted.

OBSERVATION:

Table 1

Drain Characteristics

VGS1 (v) VGS 2 (v)

S.no.
VDS (v) ID (mA) VDS (v) ID (mA)

Table 2

Transfer Characteristics

VDS1 (v) VDS2 (v)

S.no.
VGS(v) ID (mA) VGS(v) ID (mA)

RESULT:

Thus, the characteristics of Field Effect Transistor are studied.

 EXPERIMENT NO.7

COMMON SOURCE JUNCTION FIELD EFFECT TRANSISTOR AMPLIFIER

AIM:

To design and construct a Common Source JFET Amplifier and to draw the
frequency response characteristics

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Regulated Power supply (0-30)v 2
2. JFET BFW11 1
3. Resistors
4. Capacitors
5. Function generator
6. CRO, Probes

FORMULAE:

1. AV = [- gm(rd // Rd)]
Where-AV –Voltage Gain
gm- trans conductance
// -parallel connection
2. Zi = (R1 // R2) , // -parallel connection
3. Zi = (rd // Rd) // -parallel connection
4. cc = [10/(2πfL Zi)]
5. cs = [10/(2πfL Zo)]
6. AV =VO/Vi
Where-AV –Voltage Gain
Vo-output voltage
Vi-input voltage
7. Gain = 20 log 10(AV)
8. 3db line calculation = 20 log(Av(max)*√2/2)
CIRCUIT DIAGRAM:

BASE DIAGRAM:

MODEL GRAPH:
PROCEDURE:

1. The circuit is designed using design data and connections are made as per the
circuit diagram.
2. Using the function Generator the input voltage and frequency are set to a suitable
value.
3. The frequency of the signal is increased and the output waveform is obtained.
4. The output voltage is measured for various frequencies.
5. Gain in dB is calculated and the frequency response characteristics is plotted.

OBSERVATION:

Table 1

RESULT:

Thus, the frequency response characteristic of Field Effect Transistor is studied.

 EXPERIMENT NO.8

ASTABLE MULTIVIBRATOR
AIM:

To design and construct an Astable Multivibrator and to study its output

characteristics.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Bread Board
2. Resistors
3. Capacitors
4. Transistors BC107 2
5. DC power supply
6. CRO, probes

FORMULAE:

1. RC1 = RC2 = (VCC / IC)

Where-
RC1–Collector Resistance of transistor1
RC2–Collector Resistance of transistor
VCC–Supply voltage
IC –Collector current

2. IB2 (min) = (Ic / hfe)

Where-
IB2(min) – minimum Base current of transistor2

3. IB2 = 1.5 IB2 (min)

Where-
IB2 –Base current of transistor2

4. RB1 = RB2 = (VCC / IB)

Where-
RB1– Base Resistance of transistor1
RB2–Base Resistance of transistor2
VCC–Supply voltage
IB–Base current

5. Ttot = (1 / f)
Where-
Ttot –Total On time of transistor
f–frequency
 6. TON = (Ttot / 2)
Where-
TON–On time of transistor

7. C1 = C2 =[TON / (0.693RB1)]

CIRCUIT DIAGRAM: BASE DIAGRAM:

MODEL GRAPH:
PROCEDURE:

1. The circuit is designed using design data and connections are made as per the
circuit diagram.
2. The power supply is switched ON.
3. The Waveforms of VCE1, VCE2, VBE1, VBE2 are obtained from CRO.
4. Graphs are plotted.

OBSERVATION:

Table

S.no Parameters Observed values

1. VCE1
2. VCE2
3. VBE1(max)
4. VBE1(min)
5. VBE2(max)
6. VBE2(min)
7. TON
8. TOFF
9. Ttot
10. f

RESULT:

Thus, the output characteristics of an Astable Multivibrator is studied.

 EXPERIMENT NO.9

SCHMITT TRIGGER
AIM:

To design and construct a Schmitt Trigger and to study its output characteristics.

APPARATUS REQUIRED:

S.No Name of the component Range Quantity

1. Bread Board
2. Resistors
3. Capacitors
4. Transistors 2N2222 2
5. DC power supply
6. CRO, probes

FORMULAE:

1. VB2 = UTL
Where-
UTL-Upper trigger Level
VB2 –Base Voltage of transistor2

2. VE = VB2 - VBE
Where-
VE –Emitter Voltage
VBE –Base to Emitter Voltage

3. IE = IC
Where-
IE –Emitter current -
IC –Collector current

4. RE = (VE / IE)
Where-
RE–Emitter Resistance
IE –Emitter current

5. RC2 =[( VCC – VE – VCE(sat)) / IC2 ]

Where-
RC2–Collector Resistance of transistor2
VCC–Supply voltage
VE –Emitter Voltage
IC2 –Collector current of transistor2
VCE(sat) –Collector to Emitter saturation Voltage
 6. I2 = (IE /10)
Where-
I2–current through transistor 2

7. R2 = (VB2 / I2)

8. IB2 = (IC2 / hfe)

Where-
IB2 –Base current of transistor2
hfe–forward current gain

9. RC2+R1={[( VCC - VB2) / (IB2+ I2)]

When Vi = LTL= VB2

1. I1 = (VB2 / R2 )
Where-
I1–current through transistor 1

2. IC1 ~ IE = (VB2 - VBE)/ RE

Where-
IC1` –Collector current of transistor1

3. VCC ={ [RC1(I1 + IC1)] +[ I1 (R1+R2)]}

Where-
V CC –Supply Voltage -

4. T = 1/ f
Where-
T – Total time
f – frequency

5. R =[R1// (R2 + RC1)]

Where -
R-Resistance

6. C =( T/ 2.3 R)
Where -
C-Capacitance
CIRCUIT DIAGRAM: BASE DIAGRAM:

MODEL GRAPH:
PROCEDURE:

1. The circuit is designed using design data and connections are made
as per the circuit diagram.
2. The power supply is switched ON.
3. Using Function Generator both Sinusoidal and Triangular signals
are supplied.
4. The Output and Input Waveforms are obtained from CRO.
5. Graphs are plotted.

OBSERVATION:

Table

S.no Parameters Observed values

1. Vi
2. VO= VCC
3. VCC - ICRC
4. UTL
5. LTL
6. T

RESULT:

Thus, the output characteristics of a Schmitt trigger is studied.

 APPENDIX - A

RESISTOR COLOUR CODES

Resistor values are always coded in ohms. Band A is first significant figure of
component value. Band B is the second significant figure. Band C is the decimal
multiplier. Band D if present, indicates tolerance of value in percent (no color means
20%).The standard color code per EN 60062:2005 is as follows:

Temp.
Significant
Color Multiplier Tolerance Coefficient
figures
(ppm/K)
Black 0 ×100 – 250 U
1
Brown 1 ×10 ±1% F 100 S
2
Red 2 ×10 ±2% G 50 R
Orange 3 ×103 – 15 P
Yellow 4 ×104 – 25 Q
Green 5 ×105 ±0.5% D 20 Z
Blue 6 ×106 ±0.25% C 10 Z
Violet 7 ×107 ±0.1% B 5 M
8
Gray 8 ×10 ±0.05% A 1 K
9
White 9 ×10 – –
-1
Gold – ×10 ±5% J –
-2
Silver – ×10 ±10% K –
None – – ±20% M –
1. Any temperature coefficent not assigned its own letter shall be markd "Z", and the
coefficient found in other documentation.
2. For more information, see EN 60062.
 For example, a resistor with bands of yellow, violet, red, and gold will have first
digit 4 (yellow in table below), second digit 7 (violet), followed by 2 (red) zeros:
4,700 ohms. Gold signifies that the tolerance is ±5%, so the real resistance could lie
anywhere between 4,465 and 4,935 ohms.

Tight tolerance resistors may have three bands for significant figures rather than
two, and/or an additional band indicating temperature coefficient, in units of ppm/K.
All coded components will have at least two value bands and a multiplier; other bands are
optional.

As an example, let us take a resistor which (read left to right) displays the colors
yellow, violet, yellow, brown. We take the first two bands as the value, giving us 4, 7.
Then the third band, another yellow, gives us the multiplier 104. Our total value is then 47
x 104 Ω, totalling 470,000 Ω or 470 kΩ. Our brown is then a tolerance of ±1%.
 APPENDIX - B

BREADBOARD TUTORIAL

A breadboard is used to make up temporary circuits for testing or to try out an

idea. No soldering is required so it is easy to change connections and replace
components. Parts will not be damaged so they will be available to re-use afterwards. The
photograph shows a typical small breadboard which is suitable for beginners building
simple circuits with one or two ICs (chips). Larger sizes are available.

The bread board has many strips of metal (copper usually) which run underneath the
board. The metal strips are laid out as shown below.

These strips connect the holes on the top of the board. This makes it easy to
connect components together to build circuits. To use the bread board, the legs of
components are placed in the holes (the sockets). The holes are made so that they will
hold the component in place. Each hole is connected to one of the metal strips running
underneath the board. Each wire forms a node. A node is a point in a circuit where two
components are connected. Connections between different components are formed by
putting their legs in a common node.

On the bread board, a node is the row of holes that are connected by the strip of
metal underneath. The long top and bottom row of holes are usually used for power
supply connections. The rest of the circuit is built by placing components and connecting
them together with jumper wires.

Then when a path is formed by wires and components from the positive supply
node to the negative supply node, we can turn on the power and current flows through the
path and the circuit comes alive. For chips with many legs (ICs), place them in the middle
of the board so that half of the legs are on one side of the middle line and half are on the
other side.

Building a Circuit on Breadboard

Converting a circuit diagram to a breadboard layout is not straightforward

because the arrangement of components on breadboard will look quite different from the
circuit diagram.

When putting parts on breadboard you must concentrate on their connections, not
their positions on the circuit diagram. The IC (chip) is a good starting point so place it in
the centre of the breadboard and work round it pin by pin, putting in all the connections
and components for each pin in turn.

The best way to explain this is by example, so the process of building this 555
timer circuit on breadboard is listed step-by-step below. The circuit will turn on the LED
for about 5 seconds when the 'trigger' button is pressed. The time period is determined by
R1 and C1 and you may wish to try changing their values. R1 should be in the range 1k
to 1M . Time Period, T = 1.1 × R1 × C1

IC pin numbers

IC pins are numbered anti-clockwise around the IC starting near the notch or dot.
The diagram shows the numbering for 8-pin and 14-pin ICs, but the principle is the same
for all sizes.
Building the example circuit

Begin by carefully insert the 555 IC in the centre of the breadboard with its notch
or dot to the left.

Circuit on Breadboard

Then deal with each pin of the IC NE555:

1. Connect a wire (black) to 0V.

2. Connect the 10k resistor to +9V. Connect a push switch to 0V (you will need to
solder leads onto the switch)
3. Connect the 470 resistor to an used block of 5 holes, then Connect an LED (any
colour) from that block to 0V (short lead to 0V).
4. Connect a wire (red) to +9V.
5. Connect the 0.01µF capacitor to 0V. You will probably find that its leads are too
short to connect directly, so put in a wire link to an unused block of holes and
connect to that.
6. Connect the 100µF capacitor to 0V (+ lead to pin 6). Connect a wire (blue) to pin
7.
7. Connect 47k resistor to +9V. Check: there should be a wire already connected to
pin 6.
8. Connect a wire (red) to +9V.

Finally,

 Check all the connections carefully.

 Check that parts are the correct way round (LED and 100µF capacitor).
 Check that no leads are touching (unless they connect to the same block).
 Connect the breadboard to a 9V supply and press the push switch to test the
circuit.

If your circuit does not work disconnect (or switch off) the power supply and very
carefully re-check every connection against the circuit diagram.