STP9NC60

STP9NC60FP
N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP
PowerMesh™II MOSFET

TYPE VDSS RDS(on) ID

STP9NC60 600 V < 0.75 Ω 9.0 A

STP9NC60FP
www.DataSheet4U.com 600 V < 0.75 Ω 9.0 A (*)
■ TYPICAL RDS(on) = 0.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED 3 3
2 2
■ NEW HIGH VOLTAGE BENCHMARK 1 1
■ GATE CHARGE MINIMIZED
TO-220 TO-220FP
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM
charge and ruggedness.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP9NC60 STP9NC60FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25°C 9 9 (*) A
ID Drain Current (continuos) at TC = 100°C 5.7 5.7 (*) A
IDM (1) Drain Current (pulsed) 36 36 (*) A
PTOT Total Dissipation at TC = 25°C 125 40 W
Derating Factor 1.0 0.32 W/°C
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 V
Tstg Storage Temperature
– 55 to 150 °C
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX
(*) Limited only by Maximum Temperature Allowed
.
February 2002 1/9
 STP9NC60 / STP9NC60FP

THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.0 3.12 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 9 A
(pulse width limited by Tj max)
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EAS Single Pulse Avalanche Energy 850 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 600
V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 50 µA
IGSS Gate-body Leakage VGS = ±30V ±100 nA
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 4.5 A 0.6 0.75 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =20 V , ID = 4.5A 9 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1420 pF
Coss Output Capacitance 205 pF
Crss Reverse Transfer 35 pF
Capacitance

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 STP9NC60 / STP9NC60FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 300V, ID = 4.5 A 20 ns
RG = 4.7Ω VGS = 10V
tr Rise Time (see test circuit, Figure 3) 16 ns
Qg Total Gate Charge VDD = 480V, ID = 9.0 A, 55 77 nC
VGS = 10V
Qgs Gate-Source Charge 4.5 nC
Qgd Gate-Drain Charge 31 nC
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SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 300 V, ID = 4.5 A 64 ns
tf Fall Time RG = 4.7Ω VGS = 10 V 32 ns
(Resistive Load see, Figure 3)
tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 9.0 A, 19 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 13 ns
tc Cross-over Time (Inductive Load see, Figure 5) 32 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 9.0 A
ISDM (2) Source-drain Current (pulsed) 36 A
VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 1.6 V
trr Reverse Recovery Time ISD = 9 A, di/dt = 100A/µs, 600 ns
VDD = 100V, Tj = 150°C
Qrr Reverse Recovery Charge 4.7 µC
(see test circuit, Figure 5)
IRRM Reverse Recovery Current 15.5 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

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 STP9NC60 / STP9NC60FP

Thermal Impedance for TO-220 Thermal Impedance for TO-220FP

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Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

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 STP9NC60 / STP9NC60FP

Gate Charge vs Gate-source Voltage Capacitance Variations

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Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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 STP9NC60 / STP9NC60FP

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

www.DataSheet4U.com

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STP9NC60 / STP9NC60FP

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
www.DataSheet4U.com D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7
L6 L4
P011C

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 STP9NC60 / STP9NC60FP

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
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D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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 STP9NC60 / STP9NC60FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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