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BU941Z/BU941ZP

 BU941ZPFI
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON
■ VERY RUGGED BIPOLAR TECHNOLOGY
■ BUILT IN CLAMPING ZENER
■ HIGH OPERATING JUNCTION
TEMPERATURE
■ WIDE RANGE OF PACKAGES TO-3

APPLICATIONS 1
■ HIGH RUGGEDNESS ELECTRONIC 2
IGNITIONS

3 3
2 2
TO-218 1 ISOWATT218 1

INTERNAL SCHEMATIC DIAGRAM

for TO-3
Emitter: pin 2
Base: pin1
Collector: tab

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Uni t
BU941Z BU941Z P BUB941ZPFI
V CEO Collector-Emitter Voltage (IB = 0) 350 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 15 A
I CM Collector Peak Current 30 A
IB Base Current 1 A
I BM Base Peak Current 5 A
o
P t ot Total Dissipation at Tc = 25 C 180 155 65 W
o
T stg Storage T emperature -65 to 200 -65 to 175 -65 to 175 C
o
Tj Max. O perating Junction Temperature 200 175 175 C

January 2000 1/8


BU941Z/BU941ZP/BU941ZPFI

THERMAL DATA
TO-3 TO-218 ISOW AT T218
o
R t hj-ca se Thermal Resistance Junct ion-case Max 0.97 0.97 2.3 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CEO Collector Cut-off V CE = 300 V 100 µA
o
Current (I B = 0) V CE = 300 V T j = 125 C 0.5 mA
I EBO Emitter Cut-off Current V EB = 5 V 20 mA
(I C = 0)
V CL ∗ Clamping Voltage I C = 100 mA 350 500 V
V CE(sat )∗ Collector-Emitter IC = 8 A IB = 100 mA 1.8 V
Saturation Voltage I C = 10 A IB = 250 mA 1.8 V
I C = 12 A IB = 300 mA 2 V
V BE(s at)∗ Base-Emitt er IC = 8 A IB = 100 mA 2.2 V
Saturation Voltage I C = 10 A IB = 250 mA 2.5 V
I C = 12 A IB = 300 mA 2.7 V
h F E∗ DC Current Gain IC = 5 A V CE = 10 V 300
VF Diode F orward Voltage I F = 10 A 2.5 V
Functional T est V CC = 24 V L= 7 mH 10 A
(see fig. 1)
INDUCTIVE LO AD V CC = 12 V L= 7 mH
ts Storage Time V BE = 0 R BE = 47 Ω 15 µs
tf Fall Time V c la mp = 300 V IC = 7 A 0.5 µs
(see fig. 3) I B = 70 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area DC Current Gain

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BU941Z/BU941ZP/BU941ZPFI

DC Current Gain Collector-emitter Saturation Voltage

Collector-emitter Saturation Voltage Base-emitter Saturation Voltage

Base-emitter Saturation Voltage Collector-emitter Saturation Voltage

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FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms

FIGURE 3: Switching Time Test Circuit

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BU941Z/BU941ZP/BU941ZPFI

TO-3 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 11.00 13.10 0.433 0.516

B 0.97 1.15 0.038 0.045

C 1.50 1.65 0.059 0.065

D 8.32 8.92 0.327 0.351

E 19.00 20.00 0.748 0.787

G 10.70 11.10 0.421 0.437

N 16.50 17.20 0.649 0.677

P 25.00 26.00 0.984 1.023

R 4.00 4.09 0.157 0.161

U 38.50 39.30 1.515 1.547

V 30.00 30.30 1.187 1.193

A D
P

G C
E
U

B
O
N

P003F

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BU941Z/BU941ZP/BU941ZPFI

TO-218 (SOT-93) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193

C 1.17 1.37 0.046 0.054

D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051

G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637

L3 18 0.708

L5 3.95 4.15 0.155 0.163

L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

E
A
C

L5 L6

L3
L2
G
H

¯
F

R 1 2 3 P025A

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BU941Z/BU941ZP/BU941ZPFI

ISOWATT218 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146

- Weight : 4.9 g (typ.)


- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm P025C/A

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BU941Z/BU941ZP/BU941ZPFI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

 2000 STMicroelectronics – Printed in Italy – All Rights Reserved


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