A1205 Datasheet
A1205 Datasheet
A1205 Datasheet
VCC
VOUT
Amp
Gain Offset
Trim
Control
GND
DESCRIPTION (continued)
The small geometries of the BiCMOS process allow these devices package, while package UA is a three-lead ultramini SIP for
to be provided in ultrasmall packages. The package styles available through-hole mounting. Each package is lead (Pb) free, with 100%
provide magnetically optimized solutions for most applications. matte-tin-plated leadframes.
Package LH is a SOT23W miniature thin-profile surface-mount
SPECIFICATIONS
SELECTION GUIDE
Part Number Packing [1] Mounting Ambient, TA BRP (Min) BOP (Max)
A1205LLHLT-T 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount
A1205LLHLX-T 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount –40°C to 150°C –50 G 50 G
A1205LUA-T [2] Bulk, 500 pieces/bag 3-pin SIP through hole RoHS
COMPLIANT
[1] Contact Allegro for additional packing options.
[2] The chopper-style UA package is not for new design; the matrix HD style UA package is recommended for new designs.
[3] This rating does not apply to extremely short voltage transients such as Load Dump and/or ESD. Those events have individual ratings, specific to
the respective transient voltage event.
2
Allegro MicroSystems
955 Perimeter Road
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A1205 Continuous-Time Bipolar Switch
GND
1 2 1 2 3
VCC
VOUT
GND
VCC
VOUT
Terminal List
Number
Name Description
Package LH Package UA
1 1 VCC Connects power supply to chip
2 3 VOUT Output from circuit
3 2 GND Ground
3
Allegro MicroSystems
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A1205 Continuous-Time Bipolar Switch
OPERATING CHARACTERISTICS: over full operating voltage and ambient temperature ranges,
unless otherwise noted
Characteristic Symbol Test Conditions Min. Typ. Max. Units
ELECTRICAL CHARACTERISTICS
Supply Voltage [1] VCC Operating, TJ < 165°C 3.8 – 24 V
Output Leakage Current IOUTOFF VOUT = 24 V, B < BRP – – 10 µA
Output On Voltage VOUT(SAT) IOUT = 20 mA, B > BOP – 215 400 mV
Slew rate (dVCC/dt) < 2.5 V/μs, B > BOP + 5 G or B < BRP
Power-On Time [2] tPO – – 4 µs
–5G
Output Rise Time [3] tr VCC = 12 V, RLOAD = 820 Ω, CS = 12 pF – – 2 µs
Output Fall Time [3] tf VCC = 12 V, RLOAD = 820 Ω, CS = 12 pF – – 2 µs
ICCON B > BOP – 3.8 7.5 mA
Supply Current
ICCOFF B < BRP – 3.5 7.5 mA
Reverse Battery Current IRCC VRCC = –30 V – – –10 mA
Supply Zener Clamp Voltage VZ ICC = 30 mA; TA = 25°C 32 – 40 V
Supply Zener Current IZ VZ = 32 V; TA = 25°C – – 30 mA
MAGNETIC CHARACTERISTICS [4]
Operate Point BOP South pole adjacent to branded face of device –40 15 50 G
Release Point BRP North pole adjacent to branded face of device –50 –15 40 G
Hysteresis BHYS BOP – BRP 5 30 55 G
[1] Maximum voltage must be adjusted for power dissipation and junction temperature, see Power Derating section.
[2] For VCC slew rates greater than 2.5 V/μs, and TA = 150°C, the Power-On Time can reach its maximum value.
[3] C =oscilloscope probe capacitance.
S
[4] Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and as a positive value for south-polarity magnetic fields. This so-called
algebraic convention supports arithmetic comparison of north and south polarity values, where the relative strength of the field is indicated by the absolute value of B, and
the sign indicates the polarity of the field (for example, a –100 G field and a 100 G field have equivalent strength, but opposite polarity). Reference to the magnetic field
polarity is with respect to the beveled face of the device.
4
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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A1205 Continuous-Time Bipolar Switch
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic Symbol Test Conditions* Value Units
Package LH, 1-layer PCB with copper limited to solder pads 228 °C/W
Package LH, 2-layer PCB with 0.463 in.2 of copper area each side
Package Thermal Resistance RθJA 110 °C/W
connected by thermal vias
Package UA, 1-layer PCB with copper limited to solder pads 165 °C/W
21
20 (R JA = 228 ºC/W)
19
18
17
16
15
14 Package UA, 1-layer PCB
13 (R JA = 165 ºC/W)
12
11
10
Package LH, 2-layer PCB
9 (R JA = 110 ºC/W)
8
7
6
5
4 VCC(min)
3
2
20 40 60 80 100 120 140 160 180
1900
1800
1700
1600
1500
1400
1300
Power Dissipation, PD (m W)
1200 2-
l
1100 (R aye
θJ rP
A = C
1000 11 B, P
1-la 0 º ac
900 y C/ ka
(R er PC W
) ge L
800 θJA = B H
165 , Pac
700 ºC/ k a
W) ge U
600 A
500 1-lay
400 er P
(R CB,
300 θJA =
228 Packag
ºC/W e LH
200 )
100
0
20 40 60 80 100 120 140 160 180
Temperature (°C)
5
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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A1205 Continuous-Time Bipolar Switch
CHARACTERISTIC DATA
Supply Current (On) versus Ambient Temperature Supply Current (On) versus Supply Voltage
8.0 8.0
7.0 7.0
6.0 6.0 TA (°C)
VCC (V)
ICCON (mA)
ICCON (mA)
5.0 5.0 –40
24
4.0 4.0 25
3.8
150
3.0 3.0
2.0 2.0
1.0 1.0
0 0
–50 0 50 100 150 0 5 10 15 20 25
TA (°C) VCC (V)
Supply Current (Off) versus Ambient Temperature Supply Current (Off) versus Supply Voltage
8.0 8.0
7.0 7.0
6.0 6.0 TA (°C)
VCC (V)
ICCOFF (mA)
ICCOFF (mA)
Output Voltage (On) versus Ambient Temperature Output Voltage (On) versus Supply Voltage
ILOAD = 20 mA ILOAD = 20 mA
350 350
300 300
250 250
VOUT(SAT) (mV)
200 200
24 –40
150 3.8 25
150
150
100 100
50 50
0 0
–50 0 50 100 150 0 5 10 15 20 25
TA (°C) VCC (V)
6
Allegro MicroSystems
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A1205 Continuous-Time Bipolar Switch
Operate Point versus Ambient Temperature Operate Point versus Supply Voltage
50 50
40 40
30 30
TA (°C)
20 20
VCC (V) –40
BOP (G)
10
BOP (G)
10 25
24
0 0 150
12
–10 3.8 -10
–20 -20
–30
-30
–40
-40
–50 0 50 100 150 0 5 10 15 20 25 25
TA (°C) Supply Voltage (V)
0 0
24 25
–10 -10
12 150
–20 3.8
-20
–30
-30
–40
-40
–50
-50
–50 0 50 100 150 0 5 10 15 20 25 25
TA (°C)
Supply Voltage (V)
35
BHYS (G)
35 –40
30 24 30 25
25 12 150
25
3.8
20 20
15 15
10 10
5 5
–50 0 50 100 150 0 5 10 15 20 25 25
TA (°C)
Supply Voltage (V)
7
Allegro MicroSystems
955 Perimeter Road
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A1205 Continuous-Time Bipolar Switch
FUNCTIONAL DESCRIPTION
Bipolar Device Switching ing negative switch behavior operate in a similar but opposite
manner. A north polarity field of sufficient strength, > BRP , (more
The devices of the A120X family provide highly sensitive switch- north than BRP) is required for operation, although the result is
ing for applications using magnetic fields of alternating polarities, that VOUT switches high, as shown in panel C. When the field is
such as ring magnets. There are three switching modes for bipolar reduced beyond the BOP level, the device switches back to the low
devices, referred to as latch, unipolar switch, and negative switch. state.
Mode is determined by the switchpoint characteristics of the indi-
vidual device. The characteristic hysteresis, BHYS , of the device, The typical output behavior of the A120x devices is latching.
is the difference in the relative magnetic strength and polarity However, the A120x family is designed to attain a small hys-
of the switchpoints of the device. (Note that, in the following teresis, and thereby provide more sensitive switching. Although
descriptions, a negative magnetic value indicates a north polar- this means that true latching behavior cannot be guaranteed in all
ity field, and a positive magnetic value indicates a south polarity cases, proper switching can be ensured by use of both south and
field. For a given value of magnetic strength, BX , the values –BX north magnetic fields, as in a ring magnet. The hysteresis of the
and BX indicate two fields of equal strength, but opposite polarity. A120x family allows clean switching of the output, even in the
B = 0 indicates the absence of a magnetic field.) presence of external mechanical vibration and electrical noise.
Bipolar devices typically behave as latches. In this mode, VS
magnetic fields of opposite polarity and equivalent strengths
are needed to switch the output. When the magnetic fields are
removed (B → 0) the device remains in the same state until a VCC RL
magnetic field of the opposite polarity and of sufficient strength
Output
causes it to switch. The hysteresis of latch mode behavior is A120x VOUT
shown in panel A of Figure 1.
In contrast to latching, when a device exhibits unipolar switch- GND
ing, it only responds to a south magnetic field. The field must be
of sufficient strength, > BOP , for the device to operate. When the
field is reduced beyond the BRP level, the device switches back to
the high state, as shown in panel B of Figure 1. Devices exhibit- (D)
Switch to High
Switch to High
Switch to Low
Switch to Low
Switch to Low
VOUT
VOUT
VOUT
BOP
BOP
BRP
BRP
BRP
8
Allegro MicroSystems
955 Perimeter Road
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A1205 Continuous-Time Bipolar Switch
Bipolar devices adopt an indeterminate output state when For more information on the chopper stabilization technique,
powered-on in the absence of a magnetic field or in a field that refer to Technical Paper STP 97-10, Monolithic Magnetic Hall
lies within the hysteresis band of the device. Sensing Using Dynamic Quadrature Offset Cancellation and
Technical Paper STP 99-1, Chopper-Stabilized Amplifiers with a
For more information on Bipolar switches, refer to Application
Track-and-Hold Signal Demodulator.
Note 27705, Understanding Bipolar Hall Effect Sensor ICs.
Functional Safety 2
1 2 3 4 5
VCC
VOUT
t
Output Sampled
tPO(max)
9
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955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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A1205 Continuous-Time Bipolar Switch
POWER DERATING
10
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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A1205 Continuous-Time Bipolar Switch
+0.12
2.98 –0.08
D
1.49
4° ±4°
A
3
+0.020
0.180 –0.053
0.96 D
+0.19
+0.10 1.91 –0.06 2.40
2.90 –0.20
0.70
D
1.00
0.25 MIN
1 2
0.55 REF
0.25 BSC 0.95
Seating Plane
Branded Face Gauge Plane B PCB Layout Reference View
8X 10°
REF
1.00 ±0.13
NNN NNT
+0.10
0.05 –0.05
0.95 BSC
0.40 ±0.10
N = Last three digits of device part number N = Last two digits of device part number
T = Temperature Code (Letter)
11
Allegro MicroSystems
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A1205 Continuous-Time Bipolar Switch
+0.08
4.09 –0.05
45°
B
C
E
2.04
1.52 ±0.05
10°
1.44 E E Mold Ejector
+0.08 Pin Indent
3.02 –0.05
Branded 45°
Face
0.79 REF D Standard Branding Reference View
A
1.02
MAX
NNN
1
1 2 3
= Supplier emblem
N = Last three digits of device part number
NNT
14.99 ±0.25 +0.03
0.41 –0.06
= Supplier emblem
N = Last two digits of device part number
T = Temperature code
+0.05
0.43 –0.07
A Dambar removal protrusion (6×)
B Gate and tie bar burr area
C Active Area Depth, 0.50 mm ±0.08
D Branding scale and appearance at supplier discretion
1.27 NOM
12
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
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A1205 Continuous-Time Bipolar Switch
+0.08
4.09 –0.05
45°
B
C
E
2.04
1.52 ±0.05
1.44 E
Mold Ejector
+0.08 Pin Indent
3.02 –0.05
E
Branded 45°
Face
2.16
MAX D Standard Branding Reference View
0.79 REF
0.51
REF
A
NOT FOR NNT
NEW DESIGN
1 2 3
1
= Supplier emblem
+0.03 N = Last two digits of device part number
0.41 –0.06
15.75 ±0.51 T = Temperature code
13
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
A1205 Continuous-Time Bipolar Switch
Revision History
Number Date Description
8 January 1, 2015 Added LX option to Selection Guide
9 July 13, 2015 Corrected LH package Active Area Depth value
10 November 4, 2016 Chopper-style UA package designated as not for new design
11 September 26, 2017 Added Functional Safety information; added footnote to Absolute Maximum Ratings table
12 June 19, 2018 Corrected matrix-style UA package drawing
13 July 2, 2019 Minor editorial updates
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14
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com