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NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0218 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.

General Features
● VDS =200V,ID =18A
RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application Marking and pin assignment
● Hard switched and high frequency circuits
● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
NCE0218 NCE0218 TO-220-3L - - -

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 18 A
Drain Current-Continuous(TC=100℃) ID (100℃) 13 A
Pulsed Drain Current IDM 72 A
Maximum Power Dissipation PD 150 W
(Note 5)
Single pulse avalanche energy EAS 250 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RθJC 1 ℃/W

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 220 - V
Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=15A - 64 80 mΩ
Forward Transconductance gFS VDS=50V,ID=11A 25 - - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss 4200 PF
VDS=25V,VGS=0V,
Output Capacitance Coss 163 PF
F=1.0MHz
Reverse Transfer Capacitance Crss 75 PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 10 - nS
Turn-on Rise Time tr VDD=100V,ID=15A - 18 - nS
Turn-Off Delay Time td(off) VGS=10V,RGEN=2.5Ω - 22 - nS
Turn-Off Fall Time tf - 5 - nS
Total Gate Charge Qg 60 nC
VDS=100V,ID=15A,
Gate-Source Charge Qgs 19 nC
VGS=10V
Gate-Drain Charge Qgd 17 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=11A - - 1.2 V
(Note 2)
Diode Forward Current IS - - - 18 A
Reverse Recovery Time trr TJ = 25°C, IF = 15A - 90 - nS
(Note3)
Reverse Recovery Charge Qrr di/dt = 100A/μs - 300 - nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω

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Test Circuit
1）EAS test Circuit

2）Gate charge test Circuit

3）Switch Time Test Circuit

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Typical Electrical and Thermal Characteristics (Curves)

Normalized On-Resistance
ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)

Figure 2 Transfer Characteristics Figure 5 Gate Charge
Rdson On-Resistance(mΩ)

Is- Reverse Drain Current (A)

ID- Drain Current (A) Vsd Source-Drain Voltage (V)

Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward

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Normalized BVdss
C Capacitance (pF)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)

Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance

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TO-220-3L Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.9500 9.750 0.352 0.384
E1 12.650 12.950 0.498 0.510
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 7.500 REF. 0.295 REF.
Φ 3.400 3.800 0.134 0.150

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Attention:

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
■ NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■ In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
■ This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

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