Intrinsic semiconductor

Introduction

Pure semiconductors are called intrinsic semiconductors. Silicon

and germanium are the most common examples of intrinsic
semiconductors. Both these semiconductors are most frequently
used in the manufacturing of transistors, diodes and other
electronic components.

Intrinsic semiconductor is also called as undoped semiconductor or I-type semiconductor. In

intrinsic semiconductor the number of electrons in the conduction band is equal to the number of

holes in the valence band. Therefore the overall electric charge of a atom is neutral.

Intrinsic semiconductor
Atomic structure of silicon and germanium
The atomic structure of intrinsic semiconductor materials
like silicon and germanium is as follows.
Atomic structure of silicon
Silicon is a substance consisting of atoms which all have
the same number of protons. The atomic number of silicon
is 14 i.e. 14 protons. The number of protons in the nucleus
of an atom is called atomic number. Silicon atom has 14
electrons (two electrons in first orbit, eight electrons in
second orbit and 4 electrons in the outermost orbit).

Atomic structure of germanium

Germanium is a substance consisting of atoms which all
have the same number of protons. The atomic number of
germanium is 32 i.e. 32 protons. The number of protons in
the nucleus of atom is called atomic number. Germanium
has 32 electrons ( 2 electrons in first orbit, 8 electrons in
second orbit, 18 electrons in third orbit and 4 electrons in
the outermost orbit.

Intrinsic semiconductor
Covalent bonding in silicon and germanium

Covalent bonding in silicon

The outermost shell of atom is capable to hold up to eight
electrons. The atom which has eight electrons in the
outermost orbit is said to be completely filled and most
stable. But the outermost orbit of silicon has only four
electrons. Silicon atom needs four more electrons to
become most stable. Silicon atom forms four covalent
bonds with the four neighboring atoms. In covalent
bonding each valence electron is shared by two atoms.

When silicon atoms comes close to each other, each valence electron of atom is shared with
the neighboring atom and each valence electron of neighboring atom is shared with this atom.
Likewise each atom will share four valence electrons with the four neighboring atoms and four
neighboring atoms will share each valence electron with this atom. Therefore, total eight
electrons are shared.

Covalent bonding in germanium

The outermost orbit of germanium has only four electrons.
Germanium atom needs four more electrons to become
most stable. Germanium atom forms four covalent bonds
with the four neighboring atoms. In covalent bonding each
valence electron is shared by two atoms.
When germanium atoms comes close to each other each valence electron of atom is shared
with the neighboring atom and each valence electron of neighboring atom is shared with this
atom. Likewise each atom will share four valence electrons with the four neighboring atoms
andfour neighboring atoms will share each valence electron
with this atom. Therefore, total eight electrons are shared.

The outermost shell of silicon and germanium is completely filled and valence electrons are
tightly bound to the nucleus of atom because of sharing electrons with neighboring atoms. In
intrinsic semiconductors free electrons are not present at absolute zero temperature. Therefore
intrinsic semiconductor behaves as perfect insulator.

Intrinsic semiconductor
Electron and hole current
In conductors current is caused by only motion of
electrons but in semiconductors current is caused by both
electrons in conduction band and holes in valence band.

Current that is caused by electron motion is called electron current and current that is caused by

hole motion is called hole current. Electron is a negative charge carrier whereas hole is a positive

charge carrier.

At absolute zero temperature intrinsic semiconductor behaves as insulator. However, at room

temperature the electrons present in the outermost orbit absorb thermal energy. When the

outermost orbit electrons get enough energy then they will break bonding with the nucleus of

atom and jumps in to conduction band. The electrons present in conduction band are not attached

to the nucleus of an atom so they are free to move.

When the valence electron moves from valence band to the conduction band a vacancy is created

in the valence band where electron left. Such vacancy is called hole.
Let’s take an example, as shown in fig there are three atoms atom A, atom B and atom C. At

room temperature valence electron in an atom A gains enough energy and jumps in to

conduction band as show in fig (1). When it jumps in to conduction band a hole (vacancy) is

created in the valence band at atom A as shown in fig (2). Then the neighboring electron from

atom B moves to atom A to fill the hole at atom A. This creates a hole at atom B as shown in fig

(3). Similarly neighboring electron from atom C moves to atom B to fill the hole at atom B. This

creates a hole at atom C as shown in fig (4). Likewise electrons moves from left side to right side

and holes moves from right to left side.

Intrinsic semiconductor
Conduction in intrinsic semiconductor

The process of conduction in intrinsic semiconductor is shown

in below fig. In the below fig, an intrinsic semiconductor is
connected to a battery.

Here, positive terminal of battery is connected to one side and negative terminal of the battery is

connected to other side. As we know like charges repel each other and opposite charges attract

each other. In the similar way negative charge carriers (electrons) are attracted towards the

positive terminal of battery and positive charge carriers (holes) attracted towards the negative

terminal of battery.
Electrons will experience a attractive force from the positive terminal, so they move towards the

positive terminal of the battery by carrying the electric current. Similarly holes will experience a

attractive force from the negative terminal, so they moves towards the negative terminal of the

battery by carrying the electric current. Thus, in a semiconductor electric current is carried by

both electrons and holes.

In intrinsic semiconductor the number of free electrons in conduction band is equal to the

number of holes in valence band. The current caused by electrons and holes is equal in

magnitude.

The total current in intrinsic semiconductor is the sum of hole

and electron current.
Total current = Electron current + Hole current

I = Ihole+ Ielectron
 Intrinsic semiconductor
Intrinsic carrier concentration

In intrinsic semiconductor, when the valence electrons

broke the covalent bond and jumps into the conduction
band, two types of charge carriers gets generated. They
are free electrons and holes.

The number of electrons per unit volume in the conduction band or the number of holes

per unit volume in the valence band is called intrinsic carrier concentration. The number

of electrons per unit volume in the conduction band is called electron-carrier

concentration and the number of holes per unit volume in the valence band is called as

hole-carrier concentration.

In an intrinsic semiconductor, the number of electrons generated in the conduction band

is equal to the number of holes generated in the valence band. Hence the electron-

carrier concentration is equal to the hole-carrier concentration.

It can be written as,

ni = n = p

Where, n = electron-carrier concentration

P = hole-carrier concentration
 and ni = intrinsic carrier concentration

The hole concentration in the valence band is given as

The electron concentration in the conduction band is given as

Where KB is the Boltzmann constant

T is the absolute temperature of intrinsic semiconductor

Nc is the effective density of states in conduction band.

Nv is the effective density of states in valence band.

Intrinsic semiconductor
Fermi level in intrinsic semiconductor

The probability of occupation of energy levels in valence band and conduction band is called

Fermi level. At absolute zero temperature intrinsic semiconductor acts as perfect insulator.

However as the temperature increases free electrons and holes gets generated.

In intrinsic or pure semiconductor, the number of holes in valence band is equal to the number of

electrons in the conduction band. Hence, the probability of occupation of energy levels in
conduction band and valence band are equal. Therefore, the Fermi level for the intrinsic

semiconductor lies in the middle of forbidden band.

Fermi level in the middle of forbidden band indicates equal concentration of free electrons and

holes.

The hole-concentration in the valence band is given as

The electron-concentration in the conduction band is given

as
Where KB is the Boltzmann constant

T is the absolute temperature of the intrinsic semiconductor

Nc is the effective density of states in the conduction band.

Nv is the effective density of states in the valence band.

The number of electrons in the conduction band is

depends on effective density of states in the conduction
band and the distance of Fermi level from the conduction
band.

The number of holes in the valence band is depends on

effective density of states in the valence band and the
distance of Fermi level from the valence band.

For an intrinsic semiconductor, the electron-carrier concentration is equal to the hole-

carrier concentration.

It can be written as

p = n = ni

Where P = hole-carrier concentration

n = electron-carrier concentration
 and ni = intrinsic carrier concentration

The fermi level for intrinsic semiconductor is given as,

Where EF is the fermi level

EC is the conduction band
EV is the valence band

Therefore, the Fermi level in an intrinsic semiconductor

lies in the middle of the forbidden gap.