2N6661

N-Channel, Enhancement-Mode, Vertical DMOS FET

Features Description
• Free from secondary breakdown 2N6661 is an enhancement-mode (normally-off) tran-
• Low power drive requirement sistor that utilizes a vertical DMOS structure and a well-
• Ease of paralleling proven silicon-gate manufacturing process. This com-
• Low CISS and fast switching speeds bination produces a device with the power-handling
• Excellent thermal stability capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
• Integral source-drain diode
ent in MOS devices. Characteristic of all MOS struc-
• High input impedance and high gain tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
Vertical DMOS FETs are ideally suited to a wide range
• Motor controls of switching and amplifying applications where very-
• Converters low threshold voltage, high breakdown voltage, high-
• Amplifiers input impedance, low-input capacitance, and fast
• Switches switching speeds are desired.
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps, Package Types
memories, displays, bipolar transistors, etc.

GATE
SOURCE

DRAIN

TO-39
Case: Drain

See Table 2-1 for pin information

 2016 Microchip Technology Inc. DS20005516A-page 1

2N6661
1.0 ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS†

Drain-to-source voltage ......................................................................................................................................... BVDSS
Drain-to-gate voltage.............................................................................................................................................BVDGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.

ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter Symbol Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage BVDSS 90 - - V VGS= 0V, ID= 10µA
Gate threshold voltage VGS(th) 0.8 - 2.0 V VGS= VDS, ID= 1.0mA
VGS(th) change with temperature ∆VGS(th) - -3.8 -5.5 mV/°C VGS= VDS, ID= 1.0mA (Note 2)
Gate body leakage current IGSS - - 100 nA VGS= ±20V, VDS= 0V
Zero gate voltage drain current IDSS - - 10 µA VGS= 0V, VDS= Max rating
- - 500 VDS= 0.8 Max Rating,
VGS= 0V, TA= 125°C (Note 2)
On-state drain current ID(ON) 1.5 - - A VGS= 10V, VDS= 10V
Static drain-to-source on-state RDS(ON) - - 5.0 Ω VGS= 5.0V, ID= 0.3A
resistance - - 4.0 VGS= 10V, ID= 1.0A
AC Parameters (Note 2)
Forward transconductance GFS 170 - - mmho VDS= 25V, ID= 0.5A
Input capacitance CISS - - 50 pF VGS= 0V,
Common source output capacitance COSS - - 40 VDS= 24V,
f = 1.0MHz
Reverse transfer capacitance CRSS - - 10
Turn-on time t(ON) - - 10 ns VDD= 25V, ID= 1.0A,
Turn-off time t(OFF) - - 10 RGEN= 25Ω

Diode Parameters
Diode forward voltage drop VSD - 1.2 - V VGS= 0V, ISD= 1.0A (Note 1)
Reverse recovery time trr - 350 - ns VGS= 0V, ISD= 1.0A (Note 2)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS
Parameter Symbol Min Typ Max Units Conditions
Temperature Ranges
Operating and Storage Temperature TA -55 – 150 °C

DS20005516A-page 2  2016 Microchip Technology Inc.

 2N6661
THERMAL CHARACTERISTICS
ID(1) ID Power
IDR(1) IDRM
Package continuous pulsed Dissipation
(mA) (A)
(mA) (A) @TA = 25°C (W)
TO-39 350 3.0 6.25 350 3.0

Note 1: ID (continuous) is limited by max rated TJ.

Product Summary
BVDSX/BVDGS RDS(ON) IDSS
(V) (max) (Ω) (min) (A)
90 4.0 1.5

2.0 PIN DESCRIPTION

The locations of the pins are listed in Package Types
and Packaging Information.
TABLE 2-1: PIN DESCRIPTION
Pin # TO-39 Function
1 SOURCE
2 GATE
3 DRAIN

 2016 Microchip Technology Inc. DS20005516A-page 3

2N6661
3.0 FUNCTIONAL DESCRIPTION
Figure 3-1 shows the switching waveform and test cir-
cuit for 2N6661.

10V 90% VDD

INPUT Pulse RL
10% Generator
0V OUTPUT
t(ON) t(OFF)
RGEN
td(ON) tr td(OFF) tf

VDD INPUT D.U.T.

10% 10%
OUTPUT
0V 90% 90%

FIGURE 3-1: Switching Waveforms and Test Circuit

DS20005516A-page 4  2016 Microchip Technology Inc.

 2N6661
4.0 PACKAGING INFORMATION

4.1 Package Marking Information

3-Lead TO-39 Example

XX
XXXXXXXXXX 2N6661
YYWW 1605
NNN e4 343 e4

Legend: XX...X Product Code or Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC® designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.

 2016 Microchip Technology Inc. DS20005516A-page 5

2N6661

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.

DS20005516A-page 6  2016 Microchip Technology Inc.

 2N6661
APPENDIX A: REVISION HISTORY

Revision A (March 2016)

• Converted Supertex Doc #DSFP-2N6661 to
Microchip DS20005516A.
• Minor text changes throughout.
• Update to Features.

 2016 Microchip Technology Inc. DS20005516A-page 7

2N6661
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. XX - X - X Examples:

a) 2N6661 TO-39 package,
Device Package Environmental Media 500/bag
Options Type

Device: 2N6661 = N-Channel, Enhancement-Mode,

Vertical DMOS FET

Package: (blank) = TO-39, 3-lead

Environmental (blank) = Lead (Pb)-free/ROHS-compliant package

Media Type: (blank) = 500/Bag for TO-39 packages

DS20005516A-page 8  2016 Microchip Technology Inc.

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DS20005516A-page 10  2016 Microchip Technology Inc.