ADE7757 Analog Devices
ADE7757 Analog Devices
ADE7757 Analog Devices
a Energy Metering IC
with Integrated Oscillator
Preliminary Technical Data ADE7757*
FEATURES The ADE7757 specifications surpass the accuracy require-
ments as quoted in the IEC1036 standard. Due to the
On Chip Oscillator as clock source similarity between the ADE7757 and AD7755, the Appli-
High Accuracy, Supports 50 Hz/60 Hz IEC 521/1036 cation Note AN-559 can be used as a basis for a descrip-
Less than 0.1% Error Over a Dynamic Range of tion of an IEC1036 low cost watt-hour meter reference
500 to 1 design.
The ADE7757 Supplies Average Real Power on the
Frequency Outputs F1 and F2 The only analog circuitry used in the ADE7757 is in the
The High Frequency Output CF Is Intended for sigma-delta ADCs and reference circuit. All other signal
Calibration and Supplies Instantaneous Real Power processing (e.g., multiplication and filtering) is carried
Direct Drive for Electromechanical Counters and out in the digital domain. This approach provides superior
Two Phase Stepper Motors (F1 and F2) stability and accuracy over time and extreme environmen-
Proprietary ADCs and DSP Provide High Accuracy over tal conditions.
Large Variations in Environmental Conditions and The ADE7757 supplies average real power information on
Time the low frequency outputs F1 and F2. These outputs may
On-Chip Power Supply Monitoring be used to directly drive an electromechanical counter or
On-Chip Creep Protection (No Load Threshold) interface with an MCU. The high frequency CF logic
On-Chip Reference 2.5 V ⴞ 8% (30 ppm/ⴗC Typical) output, ideal for calibration purposes, provides instanta-
with External Overdrive Capability neous real power information.
Single 5 V Supply, Low Power (15 mW Typical)
The ADE7757 includes a power supply monitoring circuit
Low Cost CMOS Process
on the VDD supply pin. The ADE7757 will remain in reset
AC Input only
mode until the supply voltage on VDD reaches approxi-
mately 4 V. If the supply falls below 4 V, the ADE7757
GENERAL DESCRIPTION will also reset and the F1, F2 and CF outputs will be in
The ADE7757 is a high accuracy electrical energy mea- their non-active modes.
surement IC. It is a pin reduction version of AD7755 Internal phase matching circuitry ensures that the voltage
with an enhancement of a precise oscillator circuit that and current channels are phase matched while the HPF in
serves as a clock source to the chip. The ADE7757 the current channel eliminates dc offsets. An internal no-
eliminates the cost of an external crystal or resonator, load threshold ensures that the ADE7757 does not exhibit
thus reducing the overall cost of a meter built with this creep when no load is present.
IC. The chip directly interfaces with shunt resistor and
only operates with AC input. The ADE7757 is available in 16-lead SOIC narrow-body
package.
ADE7757
POWER
SUPPLY MONITOR
SIGNAL
PROCESSING
V2P ∑∆ ...110101... BLOCK
V2N ADC MULTIPLIER LPF
PHASE
CORRECTION HPF
V1N ∑∆ ...11011001...
V1P ADC Φ
DIGITAL-TO-FREQUENCY
CONVERTER
2.5V 4kV
INTERNAL
REFERENCE OSCILLATOR
REV. PrC.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, USA.
which may result from its use. No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
otherwise under any patent or patent rights of Analog Devices. Fax: 781/326-8703 © Analog Devices, Inc., February 2002
PRELIMINARY TECHNICAL DATA
(VDD = 5 V ⴞ 5%, AGND = DGND = 0 V, On-Chip Reference, rCKLIN = 5 kΩ 0.1% 5ppm/°C,
ADE7757–SPECIFICATIONS TMIN to TMAX = –40ⴗC to +85ⴗC)
Parameter Value Units Test Conditions/Comments
1, 2
ACCURACY
Measurement Error1 on Channel V1 Channel V2 with Full-Scale Signal (±165 mV),+25°C
TBD % Reading typ Over a Dynamic Range 500 to 1
Phase Error1 Between Channels Line Frequency = 45 Hz to 65 Hz
V1 Phase Lead 37°
(PF = 0.8 Capacitive) ±0.1 Degrees(°) max
V1 Phase Lag 60°
(PF = 0.5 Inductive) ±0.1 Degrees(°) max
AC Power Supply Rejection1 S0 = S1 = 1,
Output Frequency Variation (CF) TBD % Reading typ V1 = V2 = 100 mV rms, @50 Hz
Ripple on VDD of 200 mV rms @ 100 Hz
DC Power Supply Rejection1 S0 = S1 = 1,
Output Frequency Variation (CF) TBD % Reading typ V1 = 100 mV rms, V2 = 100 mV rms,
VDD = 5 V ±250 mV
ANALOG INPUTS See Analog Inputs Section
Channel V1 Maximum Signal Level ± 30 mV max V1P and V1N to AGND
Channel V2 Maximum Signal Level ±165 mV max V2N and V2P to AGND
Input Impedance (DC) TBD kΩ min rCKLIN = 5 kΩ 0.1% 5ppm/°C
Bandwidth (–3 dB) 7 kHz typ rCKLIN = 5 kΩ 0.1% 5ppm/°C
ADC Offset Error1, 2 ±25 mV max See Terminology and Performance Graphs
Frequency Output Error1 TBD % Ideal typ External 2.5 V Reference,
V1 = 30 mV DC, V2 = 165 mV dc
Gain Error1 ±7 % Ideal typ External 2.5 V Reference, Gain = 1
V1 = 30 mV dc, V2 = 165 mV dc
REFERENCE INPUT
REFIN/OUT Input Voltage Range 2.7 V max 2.5 V + 8%
2.3 V min 2.5 V – 8%
Input Impedance TBD kΩ min
Input Capacitance 10 pF max
ON-CHIP REFERENCE Nominal 2.5 V
Reference Error ±200 mV max
Temperature Coefficient 30 ppm/°C typ
ppm/°C max
LOGIC INPUTS3
SCF, S0, S1,
Input High Voltage, VINH 2.4 V min VDD = 5 V ± 5%
Input Low Voltage, VINL 0.8 V max VDD = 5 V ± 5%
Input Current, IIN ±3 µA max Typically 10 nA, VIN = 0 V to VDD
Input Capacitance, CIN 10 pF max
LOGIC OUTPUTS3
F1 and F2
Output High Voltage, VOH ISOURCE = 10 mA
4.5 V min VDD = 5 V
Output Low Voltage, VOL ISINK = 10 mA
0.5 V max VDD = 5 V
CF
Output High Voltage, VOH ISOURCE = 5 mA
4 V min VDD = 5 V
Output Low Voltage, VOL ISINK = 5 mA
0.5 V max VDD = 5 V
POWER SUPPLY For Specified Performance
VDD 4.75 V min 5 V – 5%
5.25 V max 5 V + 5%
IDD TBD TBD TBD
NOTES
1
See Terminology Section for explanation of specifications.
2
See Plots in Typical Performance Graphs.
3
Sample tested during initial release and after any redesign or process change that may affect this parameter.
Specifications subject to change without notice.
–2– REV. PrC.
PRELIMINARY TECHNICAL DATA
ADE7757
(VDD = 5 V ⴞ 5%, AGND = DGND = 0 V, On-Chip Reference, rCKLIN = 5 kΩ 0.1% 5ppm/°C,
TIMING CHARACTERISTICS1, 2 TMIN to TMAX = –40ⴗC to +85ⴗC)
Parameter A, B Versions Units Test Conditions/Comments
t13 550 ms F1 and F2 Pulsewidth (Logic Low)
t2 See Table II sec Output Pulse Period. See Transfer Function Section
t3 1/2 t2 sec Time Between F1 Falling Edge and F2 Falling Edge
t43, 4 180 ms CF Pulsewidth (Logic High)
t5 See Table III sec CF Pulse Period. See Transfer Function Section
t6 TBD sec Minimum Time Between F1 and F2 Pulse
NOTES
1
Sample tested during initial release and after any redesign or process change that may affect this parameter.
2
See Figure 1.
3
The pulsewidths of F1, F2 and CF are not fixed for higher output frequencies. See Frequency Outputs Section.
4
The CF pulse is always 18 µs in the high frequency mode. See Frequency Outputs section and Table III.
Specifications subject to change without notice.
t1
F1
.t 6
.t 2
F2 .t 3
t4 .t 5
CF
ORDERING GUIDE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the ADE7757 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality.
VDD 1 16 F1
V2P 2 15 F2
PIN CONFIGURATION
V2N 3 14 CF
SOIC-16nb Package
V1N 4 ADE7757 13 DGND
V1P 5 TOP VIEW 12
RESERVED
(Not to Scale)
AGND 6 11 RCLKIN
REFIN/OUT 7 10 S0
SCF 8 9 S1
TBD TBD
Figure 5. Error as a % of Reading over Temperature with
Figure 2. Error as a % Reading over Temperature on-chip
reference (PF=1) External Reference (PF=0.5)
TBD TBD
Figure 3. Error as a % of Reading over Temperature with Figure 6. Error as a %of Reading over Input Frequency
on-chip reference (PF=0.5)
VDD
100nF 10 µF
602k Ω VDD U3 K7
V2P F1
220V 200 Ω 150nF F2
U1
ADE7757 CF
TBD
200 Ω
V2N K8
150nF PS2501-1
40A TO
40mA RESERVED
200 Ω
V1P 5 kΩ
RCLKIN
150nF VDD
500µΩ
200 Ω
V1N 10k Ω
150nF
S0
S1
REFIN/OUT
1µF 100nF SCF
AGND DGND 10nF 10nF 10nF
Figure 4. Error as a % of Reading over Temperature with Figure 7. Test Circuit for Performance Curves
External Reference (PF=1)
TBD TBD
Figure 10. PSR with External Reference
Figure 8. Channel V1 Offset Distribution
TBD
Figure 9. PSR with Internal Reference
V2
P1 = V1 × I1 cos φ1 +165mV
(3) V2P
φ1 = α1 − β1 DIFFERENTIAL INPUT
± 165mV MAX PEAK V2
V2N
VCM
COMMON-MODE VCM
and ± 25mV MAX
-165mV AGND
∞
PH = ∑V
h ≠1
h × I h cos φ h Figure 14. Maximum Signal Levels, Channel V2
(4) Channel V2 is usually driven from a common-mode volt-
φh = αh − βh age, i.e., the differential voltage signal on the input is
referenced to a common mode (usually AGND). The
analog inputs of the ADE7757 can be driven with com-
As can be seen from Equation 4 above, a harmonic real mon-mode voltages of up to 25 mV with respect to
power component is generated for every harmonic, pro- AGND. However best results are achieved using a com-
vided that harmonic is present in both the voltage and mon mode equal to AGND.
current waveforms. The power factor calculation has pre- Typical Connection Diagrams
viously been shown to be accurate in the case of a pure Figure 15 shows a typical connection diagram for Channel V1.
sinusoid, therefore the harmonic real power must also A shunt is the current sensor selected for this example because of
correctly account for power factor since it is made up of a its low cost compared to other current sensors such as the CT
series of pure sinusoids. (current transformer). This IC is ideal for low current
Note that the input bandwidth of the analog inputs is meters.
14 kHz with.
Rf V1P
ANALOG INPUTS Cf
Channel V1 (Current Channel ) ±30mV V1N
SHUNT
The voltage output from the current sensor is connected to the
ADE7757 here. Channel V1 is a fully differential voltage input. Rf Cf
AGND
V1P is the positive input with respect to V1N.
PHASE NEUTRAL
The maximum peak differential signal on Channel V1 should
be less than ±30 mV (21 mV rms for a pure sinusoidal signal) Figure 15. Typical Connection for Channel V1
for specified operation. Figure 16 shows a typical connection for Channel V2.
Typically, ADE7757 is biased around the neutral wire,
V1
and a resistor divider is used to provide a voltage signal
+30mV that is proportional to the line voltage. Adjusting the ratio
V1P of Ra, Rb and VR is also a convenient way of carrying out
DIFFERENTIAL INPUT a gain calibration on a meter.
± 30mV MAX PEAK V1
V1N
VCM
COMMON-MODE Ra* Cf
± 6.25mV MAX VCM
Rb*
-30mV AGND ± 165mV V2P
VR*
Rf V2N
0V 0.30
TIME
0.25
INTERNAL 0.20
ACTIVATION INACTIVE ACTIVE INACTIVE
PHASE - Degrees
0.15
0.10
Figure 17. On-Chip Power Supply Monitor
0.05
HPF and Offset Effects
Figure 18 illustrates the effect of offsets on the real power cal- 0
culation. As can be seen, offsets on Channel V1 and Channel
-0.05
V2 will contribute a dc component after multiplication. Since
this dc component is extracted by the LPF and used to gener- -0.10
0 100 200 300 400 500 600 700 800 900 1000
ate the real power information, the offsets will contribute a
FREQUENCY - Hz
constant error to the real power calculation. This problem is
easily avoided by the built-in HPF in Channel V1. By removing Figure 19. Phase Error Between Channels (0 Hz to 1 kHz)
the offsets from at least one channel, no error component can
be generated at dc by the multiplication. Error terms at the line
frequency (ω) are removed by the LPF and the digital-to- 0.30
0.15
the dc offsets in the current and voltage channels:
0.10
V×I
+ Vos × I os + Vos × I cos(ωt ) + I os × V cos(ωt )
0
2 -0.05
V×I
+ × cos( 2ωt ) -0.10
2 40 45 50 55 60 65 70
FREQUENCY - Hz
AVERAGE
FREQUENCY ±10%
F1
FREQUENCY
DIGITAL-TO-
FREQUENCY
F1
∑ TIME
V F2
LPF
TIME
MULTIPLIER MCU
DIGITAL-TO- ADE7757
FREQUENCY CF
COUNTER
I
FREQUENCY
∑ CF CF
LPF TO EXTRACT
REAL POWER
(DC TERM)
V× I TIME TIMER
2
cos ( 2 ωt )
ATTENUATED BY LPF
ω 2ω
Figure 22. Interfacing the ADE7757 to an MCU
0
FREQUENCY (RAD/S) As shown, the frequency output CF is connected to an
INSTANTANEOUS REAL POWER SIGNAL MCU counter or port. This will count the number of
(FREQUENCY DOMAIN)
pulses in a given integration time which is determined by
Figure 21. Real Power-to-Frequency Conversion
an MCU internal timer. The average power is propor-
tional to the average frequency is given by:
As can be seen in the diagram, the frequency output CF is
seen to vary over time, even under steady load conditions. Counter
This frequency variation is primarily due to the cos (2ωt) Average Frequency = Average Power =
Time
component in the instantaneous real power signal. The
output frequency on CF can be up to 2048 times higher The energy consumed during an integration period is
than the frequency on F1 and F2. This higher output fre- given by:
quency is generated by accumulating the instantaneous
real power signal over a much shorter time while convert- Counter
Energy = Average Power × Time = × Time = Counter
Time
REV. PrC. –11–
PRELIMINARY TECHNICAL DATA
ADE7757
For the purpose of calibration, this integration time could Table I. F1–4 Frequency Selection
be 10 to 20 seconds in order to accumulate enough pulses
to ensure correct averaging of the frequency. In normal S1 S0 F1–4 (Hz)
operation the integration time could be reduced to one or 0 0 0.85
two seconds depending, for example, on the required up- 0 1 1.7
date rate of a display. With shorter integration times on 1 0 3.4
the MCU the amount of energy in each update may still 1 1 6.8
have some small amount of ripple, even under steady load
NOTE
conditions. However, over a minute or more the measured
*F1–4 is a binary fraction of the internal oscillator frequency
energy will have no ripple.
Example
Power Measurement Considerations In this example, with ac voltages of ±30 mV peak applied
Calculating and displaying power information will always to V1 and ±165 mV peak applied to V2, the expected
have some associated ripple that will depend on the inte- output frequency is calculated as follows:
gration period used in the MCU to determine average
power and also the load. For example, at light loads the F1− 4 = 0.85 Hz, S0 = S1 = 0
output frequency may be 10 Hz. With an integration pe-
riod of two seconds, only about 20 pulses will be counted. V1rms = 0.03/ 2 volts
The possibility of missing one pulse always exists as the
ADE7757 output frequency is running asynchronously to V 2 rms = 0.165/ 2 volts
the MCU timer. This would result in a one-in-twenty or
5% error in the power measurement. Vref = 2.5 V (nominal reference value).
TRANSFER FUNCTION NOTE: If the on-chip reference is used, actual
Frequency Outputs F1 and F2 output frequencies may vary from device to device
The ADE7757 calculates the product of two voltage signals (on due to reference tolerance of ±8%.
Channel V1 and Channel V2) and then low-pass filters this
product to extract real power information. This real power 515 .85 × 0 .03 × 0 .165 × 0 .85
information is then converted to a frequency. The frequency Freq = = 0 .175
information is output on F1 and F2 in the form of active low 2 × 2 × 2 .5 2
pulses. The pulse rate at these outputs is relatively low,
e.g., 0.175 Hz maximum for ac signals with S0 = S1 = Table II. Maximum Output Frequency on F1 and F2
0—see Table II. This means that the frequency at these
outputs is generated from real power information accumu- Max Frequency
lated over a relatively long period of time. The result is an S1 S0 for AC Inputs (Hz)
output frequency that is proportional to the average real 0 0 0.175
power. The averaging of the real power signal is implicit 0 1 0.35
to the digital-to-frequency conversion. The output fre- 1 0 0.7
quency or pulse rate is related to the input voltage signals 1 1 1.4
by the following equation:
Frequency Output CF
515.84 × V 1rms × V 2 rms × F1− 4 The pulse output CF (Calibration Frequency) is intended for
Freq =
Vref 2 calibration purposes. The output pulse rate on CF can be up to
2048 times the pulse rate on F1 and F2. The lower the F1–4
where: frequency selected, the higher the CF scaling (except for the
high frequency mode SCF = 0, S1 = S0 = 1). Table III shows
Freq = Output frequency on F1 and F2 (Hz) how the two frequencies are related, depending on the states of
the logic inputs S0, S1 and SCF. Due to its relatively high
V1rms = Differential rms voltage signal on Channel V1 pulse rate, the frequency at CF logic output is proportional to
(volts) the instantaneous real power. As with F1 and F2, CF is derived
from the output of the low-pass filter after multiplication. How-
V 2 rms = Differential rms voltage signal on Channel V2 ever, because the output frequency is high, this real power
(volts) information is accumulated over a much shorter time. Hence
less averaging is carried out in the digital-to-frequency con-
Vref = The reference voltage (2.5 V ± 8%) (volts) version. With much less averaging of the real power signal, the
CF output is much more responsive to power fluctua-
F1− 4 = One of four possible frequencies selected by us- tions—see Signal Processing Block in Figure 11.
ing the logic inputs S0 and S1—see Table I.
0.3937 (10.00)
0.3859 (9.80)
16 9
0.1574 (4.00) 0.2440 (6.20)
0.1497 (3.80) 0.2284 (5.80)
1 8
8°
0.0098 (0.25) 0.0192 (0.49) SEATING 0.0099 (0.25) 0° 0.0500 (1.27)
0.0040 (0.10) 0.0138 (0.35) PLANE
0.0075 (0.19) 0.0160 (0.41)