This document outlines the course syllabus for Electronic Devices and Circuits, a subject taught in the II Year of an Electronics & Communication Engineering program. The syllabus is divided into 6 units which cover topics such as semiconductor physics, PN junction diodes and their characteristics, special semiconductor devices, rectifiers and filters, transistor characteristics for BJT and FET, transistor biasing and thermal stabilization, and small signal low frequency transistor amplifier models. The document also lists 3 textbooks and 5 references recommended for the course.
This document outlines the course syllabus for Electronic Devices and Circuits, a subject taught in the II Year of an Electronics & Communication Engineering program. The syllabus is divided into 6 units which cover topics such as semiconductor physics, PN junction diodes and their characteristics, special semiconductor devices, rectifiers and filters, transistor characteristics for BJT and FET, transistor biasing and thermal stabilization, and small signal low frequency transistor amplifier models. The document also lists 3 textbooks and 5 references recommended for the course.
This document outlines the course syllabus for Electronic Devices and Circuits, a subject taught in the II Year of an Electronics & Communication Engineering program. The syllabus is divided into 6 units which cover topics such as semiconductor physics, PN junction diodes and their characteristics, special semiconductor devices, rectifiers and filters, transistor characteristics for BJT and FET, transistor biasing and thermal stabilization, and small signal low frequency transistor amplifier models. The document also lists 3 textbooks and 5 references recommended for the course.
This document outlines the course syllabus for Electronic Devices and Circuits, a subject taught in the II Year of an Electronics & Communication Engineering program. The syllabus is divided into 6 units which cover topics such as semiconductor physics, PN junction diodes and their characteristics, special semiconductor devices, rectifiers and filters, transistor characteristics for BJT and FET, transistor biasing and thermal stabilization, and small signal low frequency transistor amplifier models. The document also lists 3 textbooks and 5 references recommended for the course.
UNIT-I Semi Conductor Physics : Insulators, Semi conductors and Metals classification using energy band diagrams, mobility and conductivity, electrons and holes in intrinsic semi conductors, extrinsic semi conductors, drift and diffusion, charge densities in semiconductors, Hall effect, continuity equation, law of junction, Fermi Dirac function, Fermi level in intrinsic and extrinsic Semiconductors. UNIT- II Junction Diode Characteristics : Open circuited p-n junction, Biased p-n junction, p-n junction diode, current components in PN junction Diode, diode equation, V-I Characteristics, temperature dependence on V-I characteristics, Diode resistance, Diode capacitance, energy band diagram of PN junction Diode. Special Semiconductor Devices: Zener Diode, Breakdown mechanisms, Zener diode applications, LED, LCD, Photo diode, Varactor diode, Tunnel Diode, DIAC, TRIAC, SCR, UJT. Construction, operation and characteristics of all the diodes is required to be considered. UNIT- III Rectifiers and Filters: Basic Rectifier setup, half wave rectifier, full wave rectifier, bridge rectifier, derivations of characteristics of rectifiers, rectifier circuits-operation, input and output waveforms; Filters; Inductor filter, Capacitor filter, L- section filter, - section filter, Multiple L- section and Multiple section filter ,comparison of various filter circuits in terms of ripple factors. UNIT- IV Transistor Characteristics: BJT: Junction transistor, transistor current components, transistor equation, transistor configurations, transistor as an amplifier, characteristics of transistor in Common Base, Common Emitter and Common Collector configurations, Ebers-Moll model of a transistor, punch through/ reach through, Photo transistor, typical transistor junction voltage values.
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FET: FET types, construction, operation, characteristics, parameters,
MOSFET-types, construction, operation, characteristics, comparison between JFET and MOSFET. UNIT- V Transistor Biasing and Thermal Stabilization : Need for biasing, operating point, load line analysis, BJT biasing- methods, basic stability, fixed bias, collector to base bias, self bias, Stabilization against variations in VBE, Ic, and , Stability factors, (S, S', S'), Bias compensation, Thermal runaway, Thermal stability. FET Biasing- methods and stabilization. UNIT- VI Small Signal Low Frequency Transistor Amplifier Models: BJT: Two port network, Transistor hybrid model, determination of hparameters, conversion of h-parameters, generalized analysis of transistor amplifier model using h-parameters, Analysis of CB, CE and CC amplifiers using exact and approximate analysis, Comparison of transistor amplifiers. FET: Generalized analysis of small signal model, Analysis of CG, CS and CD amplifiers, comparison of FET amplifiers. TEXT BOOKS: 1. Electronic Devices and Circuits- J. Millman, C. Halkias, Tata McGraw Hill, Second Edition. 2.
Electronic Devices and Circuits-B.P.Singh, Rekha Singh,Pearson
Publications,Second Edition.
3.
Electronic Devices and Circuits-David A.Bell, Oxford University
Press, Fifth Edition.
REFERENCES: 1.
Electronic Devices and Circuits- K. Satya Prasad.
2.
Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, Tata
Mc-Graw Hill, Second Edition .
3.
Electronic Devices and Circuit Theory-R.L. Boylestad and Louis
Nashelsky, Pearson Publications,Tenth Edition.
4.
Electronic Devices and Circuits -BV Rao, KBR Murty, K Raja
Rajeswari, PCR Pantulu, Pearson, 2nd edition.
5.
Integrated Electronics- Jacob Millman, C. Halkies, C.D. Parikh, Tata