EDC Syllabus R13

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Electronics & Communication Engineering

II Year I SEMESTER

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68

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ELECTRONIC DEVICES AND CIRCUITS


UNIT-I
Semi Conductor Physics : Insulators, Semi conductors and Metals
classification using energy band diagrams, mobility and conductivity,
electrons and holes in intrinsic semi conductors, extrinsic semi conductors,
drift and diffusion, charge densities in semiconductors, Hall effect, continuity
equation, law of junction, Fermi Dirac function, Fermi level in intrinsic and
extrinsic Semiconductors.
UNIT- II
Junction Diode Characteristics : Open circuited p-n junction, Biased p-n
junction, p-n junction diode, current components in PN junction Diode, diode
equation, V-I Characteristics, temperature dependence on V-I characteristics,
Diode resistance, Diode capacitance, energy band diagram of PN junction
Diode.
Special Semiconductor Devices: Zener Diode, Breakdown mechanisms,
Zener diode applications, LED, LCD, Photo diode, Varactor diode, Tunnel
Diode, DIAC, TRIAC, SCR, UJT. Construction, operation and characteristics
of all the diodes is required to be considered.
UNIT- III
Rectifiers and Filters: Basic Rectifier setup, half wave rectifier, full wave
rectifier, bridge rectifier, derivations of characteristics of rectifiers, rectifier
circuits-operation, input and output waveforms; Filters; Inductor filter,
Capacitor filter, L- section filter, - section filter, Multiple L- section and
Multiple section filter ,comparison of various filter circuits in terms of
ripple factors.
UNIT- IV
Transistor Characteristics:
BJT: Junction transistor, transistor current components, transistor equation,
transistor configurations, transistor as an amplifier, characteristics of
transistor in Common Base, Common Emitter and Common Collector
configurations, Ebers-Moll model of a transistor, punch through/ reach
through, Photo transistor, typical transistor junction voltage values.

Electronics & Communication Engineering

69

FET: FET types, construction, operation, characteristics, parameters,


MOSFET-types, construction, operation, characteristics, comparison between
JFET and MOSFET.
UNIT- V
Transistor Biasing and Thermal Stabilization : Need for biasing, operating
point, load line analysis, BJT biasing- methods, basic stability, fixed bias,
collector to base bias, self bias, Stabilization against variations in VBE, Ic, and
, Stability factors, (S, S', S'), Bias compensation, Thermal runaway,
Thermal stability. FET Biasing- methods and stabilization.
UNIT- VI
Small Signal Low Frequency Transistor Amplifier Models:
BJT: Two port network, Transistor hybrid model, determination of hparameters, conversion of h-parameters, generalized analysis of transistor
amplifier model using h-parameters, Analysis of CB, CE and CC amplifiers
using exact and approximate analysis, Comparison of transistor amplifiers.
FET: Generalized analysis of small signal model, Analysis of CG, CS and
CD amplifiers, comparison of FET amplifiers.
TEXT BOOKS:
1. Electronic Devices and Circuits- J. Millman, C. Halkias, Tata McGraw Hill, Second Edition.
2.

Electronic Devices and Circuits-B.P.Singh, Rekha Singh,Pearson


Publications,Second Edition.

3.

Electronic Devices and Circuits-David A.Bell, Oxford University


Press, Fifth Edition.

REFERENCES:
1.

Electronic Devices and Circuits- K. Satya Prasad.

2.

Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, Tata


Mc-Graw Hill, Second Edition .

3.

Electronic Devices and Circuit Theory-R.L. Boylestad and Louis


Nashelsky, Pearson Publications,Tenth Edition.

4.

Electronic Devices and Circuits -BV Rao, KBR Murty, K Raja


Rajeswari, PCR Pantulu, Pearson, 2nd edition.

5.

Integrated Electronics- Jacob Millman, C. Halkies, C.D. Parikh, Tata


Mc-Graw Hill, 2009.

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