TLP 521-4

TLP5211,TLP5212,TLP5214
TOSHIBA Photocoupler
GaAs Ired & PhotoTransistor
TLP5211,TLP5212,TLP5214
Programmable Controllers
AC/DCInput Module
Solid State Relay
Unit in mm
The TOSHIBA TLP5211, 2 and 4 consist of a phototransistor

optically coupled to a gallium arsenide infrared emitting diode.
The TLP5212 offers two isolated channels in an eight lead plastic DIP
package, while the TLP5214 provides four isolated channels in a
sixteen plastic DIP package.
Collectoremitter voltage: 55 V (min)
Current transfer ratio: 50% (min)
TOSHIBA
115B2
Weight: 0.26 g
Rank GB: 100% (min)
Isolation voltage: 2500 Vrms (min)
UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349
Pin Configurations (top view)
TLP521-2
TLP521-1
TLP521-4
16
15
14
13
12
11
10
TOSHIBA
1110C4
Weight: 0.54 g
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
: Anode
1, 3, 5, 7
: Cathode
2, 4, 6, 8
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector
TOSHIBA
1120A3
Weight: 1.1 g
2007-10-01
TLP5211,TLP5212,TLP5214
Absolute Maximum Ratings (Ta = 25C)
Rating
Characteristic
Forward current
Detector
LED
Forward current derating
Symbol
TLP5211
TLP5212
TLP5214
Unit
IF
70
50
mA
IF /C
0.93 (Ta 50C)
0.5 (Ta 25C)
mA /C
Pulse forward current
IFP
1 (100 pulse, 100pps)
Reverse voltage
VR
Junction temperature
Tj
125
Collectoremitter voltage
VCEO
55
Emittercollector voltage
VECO
Collector current
IC
50
mA
Collector power dissipation

(1 circuit)
PC
150
100
mW
PC /C
1.5
1.0
mW /C
Collector power dissipation

derating (1 circuit Ta 25C)
Junction temperature
Tj
125
Storage temperature range
Tstg
55~125
Operating temperature range
Topr
55~100
Lead soldering temperature
Tsol
260 (10 s)
Total package power dissipation
PT
250
150
mW
Total package power dissipation

derating (Ta 25C)
PT /C
2.5
1.5
mW /C
Isolation voltage
BVS
2500 (AC, 1min., R.H. 60%)
(Note 1)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions

Characteristic
Symbol
Min
Supply voltage
VCC
Forward current
IF
Collector current
Operating temperature
Typ.
Max
Unit
24
16
25
mA
IC
10
mA
Topr
25
85
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2007-10-01
TLP5211,TLP5212,TLP5214
Type
TLP521
TLP5212
TLP5214
Classi
fication (*1)
Current Transfer Ratio (%)

(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25C
Marking Of
Classification
Min
Max
50
600
Blank, Y, Y , G, G , B, B , GB
Rank Y
50
150
Y, Y
Rank GR
100
300
G, G
Rank BL
200
600
B, B
Rank GB
100
600
G, G , B, B , GB
50
600
Blank, GR, BL, GB
Rank GB
100
600
GR, BL, GB
*1: Ex. rank GB: TLP5211 (GB)

(Note): Application type name for certification test, please use standard product type name, i.e.
TLP5211 (GB): TLP5211, TLP5212 (GB): TLP5212
2007-10-01
TLP5211,TLP5212,TLP5214
Individual Electrical Characteristics (Ta = 25C)
Detector
LED
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
Reverse current
IR
VR = 5 V
10
Capacitance
CT
V = 0, f = 1 MHz
30
pF
Collectoremitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
55
Emittercollector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
VCE = 24 V
10
100
nA
VCE = 24 V, Ta = 85C
50
V = 0, f = 1 MHz
10
pF
MIn
Typ.
Max
Unit
50
600
100
600
Collector dark current
ICEO
Capacitance
(collector to emitter)
CCE
Coupled Electrical Characteristics (Ta = 25C)

Characteristic
Current transfer ratio
Saturated CTR
Collectoremitter
saturation voltage
Symbol
IC / IF
IC / IF (sat)
VCE (sat)
Test Condition
IF = 5 mA, VCE = 5 V
Rank GB
IF = 1 mA, VCE = 0.4 V

Rank GB
60
30
IC = 2.4 mA, IF = 8 mA
0.4
IC = 0.2 mA, IF = 1 mA
Rank GB
0.2
0.4
Min
Typ.
Max
Unit
pF
Isolation Characteristics (Ta = 25C)

Characteristic
Symbol
Test Condition
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
0.8
Isolation resistance
RS
VS = 500 V, R.H. 60%
10
AC, 1 minute
Isolation voltage
BVS
11
2500
AC, 1 second, in oil
5000
DC, 1 minute, in oil
5000
Vrms
Vdc
2007-10-01
TLP5211,TLP5212,TLP5214
Switching Characteristics (Ta = 25C)
Characteristic
Symbol
Rise time
Test Condition
Min
Typ.
Max
tr
Fall time
tf
Turnon time
ton
VCC = 10 V
IC = 2 mA
RL = 100
Turnoff time
toff
Turnon time
tON
15
25
Storage time
ts
Turnoff time
tOFF
Fig.1 : SWITCHING
IF
RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA
Unit
TIME TEST CIRCUIT

IF
RL
VCC
tS
VCE
VCE
4.5V
0.5V
tON
tOFF
VCC
2007-10-01
TLP5211,TLP5212,TLP5214
IF Ta
100
80
80
Allowable forward current

IF (mA)
Allowable forward current

IF (mA)
TLP521-1
100
60
40
20
0
-20
20
40
60
40
20
Ambient temperature Ta (C)
240
120
Allowable collector power

dissipation PC (mW)
160
120
80
60
80
100
TLP521-2
TLP521-4
80
100
PC Ta
80
60
40
20
40
0
-20
20
40
60
80
0
-20
100
IFP DR
TLP521-1
3000
20
3000
Pulse width 100s
TLP521-2
TLP521-4
Pulse width 100s

Ta = 25C
Allowable pulse forward

current IFP (mA)
1000
500
300
100
50
30
10-3
10-2
Duty cycle ratio
60
IFP DR
Ta = 25C
10
3
40
Allowable pulse forward

current IFP (mA)
40
100
200
Allowable collector power

dissipation PC (mW)
20
PC Ta
TLP521-1
IF Ta
60
0
-20
100
80
TLP521-2
TLP521-4
10-1
1000
500
300
100
50
30
10
3
100
DR
10-3
10-2
Duty cycle ratio
10-1
100
DR
2007-10-01
TLP5211,TLP5212,TLP5214
100
VF/Ta
IF VF
Ta=25C
Forward voltage temperature

coefficient VF/Ta (mV/C)
Forward current IF
(mA)
30
10
5
3
1
0.5
0.1
0.4
0.8
0.6
1.0
1.4
1.2
Forward voltage VF
-2.0
-1.6
-1.2
-0.4
0.1
1.6
0.3
(V)
10
Collector dark current ICEO
(A)
500 Repetitive frequency =100Hz

300 Ta = 25C
100
50
30
10
5
3
10
10
10
10
10
0.8
1.2
1.6
Pulse forward voltage
2.0
-1
-2
-3
-4
2.4
80
40
VFP (V)
(mA)
50mA
Collector current IC
(mA)
Collector current IC
()
IC VCE
60
30mA
20mA
15mA
PC(MAX.)
10mA
20
IF=5mA
160
120
Ambient temperature Ta
50mA
25
10V
5V
VCE=24V
Ta=25C
(mA)
IF
IC VCE
80
40
30
10
ICEO Ta
Pulse width 10s
0.4
Forward current
IFP VFP
1000
Pulse forward current IFP (mA)
-2.4
-0.8
0.3
IF
-2.8
50
1
0
Collector-emitter voltage
20
20mA
15
10mA
10
5mA
0
0
10
VCE (V)
40mA
30mA
IF=2mA
0.2
0.4
0.6
0.8
Collector-emitter voltage
Ta=25C
1.0
1.2
1.4
VCE (V)
2007-10-01
TLP5211,TLP5212,TLP5214
IC IF
100
300
Current transfer ratio

IC /IF (%)
Collector current IC (mA)
30
10
Sample
IC/IF IF
500
Ta = 25C
VCE=5V
50
VCE=0.4V
5
3
Sample
Sample
100
Sample
50
30
Ta = 25C
VCE=5V
VCE=0.4V
10
5
0.3
10
30
Forward current IF
0.5
100
(mA)
0.3
VCE(sat) Ta
0.20
Collector-emitter saturation
voltage VCE(sat) (V)
0.1
0.05
0.03
0.3
10
Forward current IF
30
100
(mA)
IF = 5mA
IC = 1mA
0.16
0.12
0.08
0.04
-20
IC Ta
1000
500
10mA
5
3
1mA
IF = 0.5mA
100
tS
50
30
10
5
0.3
0.1
-20
20
100
tOFF
10
Switching time (s)
Collector current IC (mA)
300
80
Ta = 25C
IF = 16mA
VCC= 5V
5mA
0.5
60
Ta ()
RL Switching Time
VCE = 5V
25mA
50
40
Ambient temperature
100
30
20
40
Ambient temperature
60
80
1
1
100
tON
10
30
100
300
Load resistance RL (k)
Ta ()
2007-10-01
TLP5211,TLP5212,TLP5214
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2007-10-01

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What components does the TLP521 consist of?

What components does the TLP521 consist of?

What are the electrical characteristics of the TLP521?

What are the electrical characteristics of the TLP521?

TLP5211,TLP5212,TLP5214

GaAs Ired & PhotoTransistor

The TOSHIBA TLP5211, 2 and 4 consist of a phototransistor

Collectoremitter voltage: 55 V (min)

Current transfer ratio: 50% (min)

Rank GB: 100% (min)

Isolation voltage: 2500 Vrms (min)

Pin Configurations (top view)

Forward current derating

0.93 (Ta 50C)

0.5 (Ta 25C)

Pulse forward current

1 (100 pulse, 100pps)

Collector power dissipation

Collector power dissipation

Storage temperature range

Operating temperature range

Lead soldering temperature

Total package power dissipation

Total package power dissipation

2500 (AC, 1min., R.H. 60%)

Recommended Operating Conditions

Current Transfer Ratio (%)

Blank, GR, BL, GB

*1: Ex. rank GB: TLP5211 (GB)

Collector dark current

Coupled Electrical Characteristics (Ta = 25C)

IF = 1 mA, VCE = 0.4 V

Isolation Characteristics (Ta = 25C)

VS = 500 V, R.H. 60%

AC, 1 second, in oil

DC, 1 minute, in oil

TIME TEST CIRCUIT

Allowable forward current

Allowable forward current

Ambient temperature Ta (C)

Allowable collector power

Pulse width 100s

Pulse width 100s

Allowable pulse forward

Duty cycle ratio

Ambient temperature Ta (C)

Ambient temperature Ta (C)

Allowable pulse forward

Allowable collector power

Ambient temperature Ta (C)

Duty cycle ratio

Forward voltage temperature

Collector dark current ICEO

500 Repetitive frequency =100Hz

Pulse forward voltage

Pulse width 10s

Pulse forward current IFP (mA)

Current transfer ratio

Collector current IC (mA)