RN4910FE: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN4910FE
TOSHIBA Transistor Silicon PNP NPN Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)
RN4910FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.
Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Equivalent Circuit and Bias Resistor Values

Q1
Q2
C
R1
R1
R1: 4.7 k
JEDEC
JEITA
TOSHIBA
(Q1, Q2 common)
2-2N1G
Weight: 0.003g (typ.)
Marking
Equivalent Circuit (top view)

6
VK
Q2
Q1
2004-07-01
RN4910FE
Maximum Ratings (Ta = 25C) (Q1)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
IC
100
mA
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
IC
100
mA
Collector current
Maximum Ratings (Ta = 25C) (Q2)

Characteristics
Collector current
Maximum Ratings (Ta = 25C) (Q1, Q2 common)

Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
100
mW
Tj
150
Tstg
55~150
PC (Note)
Note: Total rating
2004-07-01
RN4910FE
Electrical Characteristics (Ta = 25C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
100
nA
hFE
VCE = 5 V, IC = 1 mA
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE (sat)
fT
Cob
120
400
IC = 5 mA, IB = 0.25 mA
0.1
0.3
VCE = 10 V, IC = 5 mA
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
pF
Min
Typ.
Max
Unit
100
nA
nA
Electrical Characteristics (Ta = 25C) (Q2)

Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
DC current gain
hFE
VCE = 5 V, IC = 1 mA
Collector-emitter saturation voltage

Transition frequency
Collector output capacitance
VCE (sat)
fT
Cob
100
120
700
IC = 5 mA, IB = 0.25 mA
0.1
0.3
VCE = 10 V, IC = 5 mA
250
MHz
VCB = 10 V, IE = 0, f = 1 MHz
pF
Electrical Characteristics (Ta = 25C) (Q1, Q2 common)

Characteristics
Input resistor
Symbol
Test Condition
Min
Typ.
Max
Unit
R1
3.29
4.7
6.11
2004-07-01
RN4910FE
(A)
(mA)
Q1
2004-07-01
RN4910FE
(mA)
Q2
2004-07-01
RN4910FE
RESTRICTIONS ON PRODUCT USE
030619EAA
The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2004-07-01

RN4910FE: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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RN4910FE

TOSHIBA Transistor Silicon PNP NPN Epitaxial Type

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

Incorporating a bias resistor into a transistor reduces parts count.

Equivalent Circuit and Bias Resistor Values

Weight: 0.003g (typ.)

Equivalent Circuit (top view)

Maximum Ratings (Ta = 25C) (Q2)

Maximum Ratings (Ta = 25C) (Q1, Q2 common)

Note: Total rating

Collector cut-off current

Emitter cut-off current

Electrical Characteristics (Ta = 25C) (Q2)

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Electrical Characteristics (Ta = 25C) (Q1, Q2 common)

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

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