Data Sheet
Data Sheet
Data Sheet
Description
Continuous-time operation
Fast power-on time
Low noise
Stable operation over full operating temperature range
Reverse battery protection
Solid-state reliability
Factory-programmed at end-of-line for optimum
performance
Robust EMC performance
High ESD rating
Regulator stability without a bypass capacitor
www.DataSheet4U.com
VCC
To all subcircuits
Regulator
VOUT
Amp
Gain
Offset
Trim
Control
GND
A1201-DS, Rev. 5
A1201, A1202,
A1203, and A1204
Description (continued)
applications, without adding external components. All devices in
the family are identical, except for magnetic switchpoints.
The small geometries of the BiCMOS process allow these devices
to be provided in ultrasmall packages. The package styles available
Selection Guide1
Packing2
Part Number
Mounting
Ambient, TA
A1201ELHLT-T
A1201EUA-T
A1201LLHLT-T
A1201LUA-T
A1202ELHLT-T
A1202EUA-T
A1202LLHLT-T
A1202LUA-T
A1203ELHLT-T
A1203EUA-T
A1203LLHLT-T
A1203LUA-T
BRP (Min)
BOP (Max)
50
50
75
75
95
95
40C to 85C
40C to 150C
40C to 85C
40C to 150C
40C to 85C
40C to 150C
The variants cited in this footnote are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that
sale of this device is currently restricted to existing customer applications. The variants should not be purchased for new design applications
because obsolescence in the near future is probable. Samples are no longer available. Status change: October 31, 2006. These variants include:
A1204ELHLT-T, A1204EUA-T, A1204LLHLT-T, and A1204LUA-T.
2Contact Allegro for additional packing options.
Symbol
Notes
Rating
Units
Supply Voltage
VCC
30
VRCC
30
VOUT
30
VROUT
0.5
IOUTSINK
25
mA
Unlimited
Range E
40 to 85
Range L
TA
40 to 150
TJ(max)
165
Tstg
65 to 170
Storage Temperature
A1201, A1202,
A1203, and A1204
OPERATING CHARACTERISTICS over full operating voltage and ambient temperature ranges, unless otherwise noted
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Electrical Characteristics
Supply Voltage1
Output Leakage Current
Output On Voltage
Power-On Time2
Output Rise Time3
Output Fall
Time3
Supply Current
Reverse Battery Current
VCC
3.8
24
IOUTOFF
10
VOUT(SAT)
215
400
mV
tr
tf
tPO
ICCON
B > BOP
3.8
7.5
mA
ICCOFF
B < BRP
3.5
7.5
mA
VRCC = 30 V
10
mA
IRCC
VZ
32
IZ
VZ = 32 V; TA = 25C
30
mA
40
15
50
26
75
Magnetic
Characteristics5
A1201
Operate Point
Release Point
BOP
BRP
A1202
A1203
26
95
A1204
100
42
150
A1201
50
15
40
75
26
95
26
150
40
100
A1202
A1203
A1204
Hysteresis
BHYS
A1201
30
55
A1202
30
52
30
52
50
82
115
A1203
BOP BRP
A1204
1
Maximum voltage must be adjusted for power dissipation and junction temperature, see Power Derating section.
For VCC slew rates greater than 250 V/s, and TA = 150C, the Power-On Time can reach its maximum value.
3 C =oscilloscope probe capacitance.
S
4 Maximum current limit is equal to the maximum I
CC(max) + 22 mA.
5 Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and as a positive value for south-polarity magnetic fields.
This so-called algebraic convention supports arithmetic comparison of north and south polarity values, where the relative strength of the field is indicated
by the absolute value of B, and the sign indicates the polarity of the field (for example, a 100 G field and a 100 G field have equivalent strength, but
opposite polarity).
2
A1201, A1202,
A1203, and A1204
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic
Symbol
Test Conditions
RJA
Value Units
228
C/W
Package LH, 2-layer PCB with 0.463 in.2 of copper area each
side connected by thermal vias
110
C/W
165
C/W
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
VCC(max)
40
60
80
100
120
140
160
180
Pa
(R cka
ge
QJ
A =
L
11 H, 2
0 -la
Pac
C/ ye
W
(R kage
) r PC
UA
QJA =
B
,
165 1-la
C/ yer
W)
PC
B
Pac
k
(R age LH
,
QJA =
228 1-laye
C/W r PC
B
)
20
40
60
80
100
120
Temperature (C)
140
160
180
A1201, A1202,
A1203, and A1204
(A1201/02/03/04)
(A1201/02/03/04)
8.0
7.0
7.0
ICCON (mA)
6.0
VCC (V)
5.0
24
3.8
4.0
3.0
ICCON (mA)
8.0
TA (C)
40
25
150
4.0
3.0
2.0
2.0
1.0
1.0
50
50
TA (C)
100
150
10
15
20
(A1201/02/03/04)
(A1201/02/03/04)
8.0
7.0
7.0
VCC (V)
5.0
24
3.8
4.0
3.0
ICCOFF (mA)
8.0
25
6.0
TA (C)
5.0
40
25
150
4.0
3.0
2.0
2.0
1.0
1.0
0
0
50
50
TA (C)
100
150
15
20
25
(A1201/02/03/04)
400
10
VCC (V)
(A1201/02/03/04)
400
350
350
300
300
250
VCC (V)
200
24
3.8
150
100
50
VOUT(SAT) (mV)
VOUT(SAT) (mV)
VCC (V)
6.0
ICCOFF (mA)
6.0
5.0
TA (C)
250
40
25
150
200
150
100
50
0
50
50
TA (C)
100
150
10
15
20
25
VCC (V)
A1201, A1202,
A1203, and A1204
(A1201)
50
50
40
40
30
30
20
VCC (V)
10
24
12
3.8
0
-10
BOP (G)
BOP (G)
20
40
25
150
0
-10
-20
-20
-30
-30
-40
TA (C)
10
-40
-50
50
TA (C)
100
150
15
20
25
(A1201)
40
40
30
30
20
20
10
10
VCC (V)
24
12
3.8
-10
-20
BRP (G)
BRP (G)
10
VCC (V)
TA (C)
40
25
150
-10
-20
-30
-30
-40
-40
-50
-50
-50
50
100
150
10
15
20
TA (C)
VCC (V)
(A1201)
55
25
(A1201)
55
50
50
45
45
40
40
VCC (V)
35
24
12
3.8
30
25
BHYS (G)
BHYS (G)
40
25
150
30
25
20
20
15
15
10
10
TA (C)
35
5
-50
50
TA (C)
100
150
10
15
20
25
VCC (V)
A1201, A1202,
A1203, and A1204
(A1204)
(A1202, A1203)
150
70
60
100
VCC (V)
40
24
12
3.8
30
A (C)
VT
(V)
CC
50
BOP (G)
BOP (G)
50
40
24
25
12
3.8
150
20
-50
10
0
-100
-50
50
TA (C)
100
150
-50
100
150
(A1204)
(A1202, A1203)
100
-5
-15
50
-25
VCC (V)
-35
24
12
3.8
-45
A (C)
VT
(V)
CC
BRP (G)
BRP (G)
50
TA (C)
40
24
25
12
3.8
150
-50
-55
-100
-65
-75
-150
-50
50
TA (C)
100
-50
150
50
TA (C)
100
150
(A1202, A1203)
80
(A1204)
130
75
120
70
65
110
VCC (V)
60
24
12
3.8
55
50
45
BHYS (G)
BHYS (G)
VCC (V)
100
40
24
12
25
3.8
150
90
80
70
40
60
35
30
50
-50
50
TA (C)
100
150
-50
50
100
150
TA (C)
A1201, A1202,
A1203, and A1204
In contrast to latching, when a device exhibits unipolar switching, it only responds to a south magnetic field. The field must
be of sufficient strength, > BOP , for the device to operate. When
the field is reduced beyond the BRP level, the device switches
back to the high state, as shown in panel B of figure 1. Devices
exhibiting negative switch behavior operate in a similar but
opposite manner. A north polarity field of sufficient strength,
> BRP , (more north than BRP) is required for operation, although
the result is that VOUT switches high, as shown in panel C. When
VS
VCC
(A)
A120x
GND
(D)
(C)
V+
V+
VOUT
Switch to High
Switch to High
VOUT
BHYS
B+
BRP
BRP
B 0
VOUT(SAT)
0
BOP
BHYS
B+
VOUT(SAT)
0
BOP
BOP
BRP
VOUT(SAT)
VCC
Switch to Low
VOUT
VCC
Switch to Low
Switch to Low
Switch to High
VCC
Sensor Output
VOUT
(B)
V+
RL
B+
BHYS
Figure 1. Bipolar Device Output Switching Modes. These behaviors can be exhibited when using a circuit such as that shown in panel D. Panel A
displays the hysteresis when a device exhibits latch mode (note that the BHYS band incorporates B= 0), panel B shows unipolar switch behavior (the
BHYS band is more positive than B = 0), and panel C shows negative switch behavior (the BHYS band is more negative than B = 0). Bipolar devices,
such as the 120x family, can operate in any of the three modes.
A1201, A1202,
A1203, and A1204
the field is reduced beyond the BOP level, the device switches
back to the low state.
Bipolar devices adopt an indeterminate output state when powered-on in the absence of a magnetic field or in a field that lies
within the hysteresis band of the device.
CONTINUOUS-TIME BENEFITS
Continuous-time devices, such as the A120x family, offer the
fastest available power-on settling time and frequency response.
Due to offsets generated during the IC packaging process,
continuous-time devices typically require programming after
packaging to tighten magnetic parameter distributions. In contrast, chopper-stabilized switches employ an offset cancellation
technique on the chip that eliminates these offsets without the
need for after-packaging programming. The tradeoff is a longer
settling time and reduced frequency response as a result of the
chopper-stabilization offset cancellation algorithm.
VCC
t
VOUT
t
Output Sampled
tPO(max)
Figure 2. Continuous-Time Application, B < BRP.. This figure illustrates the use of a quick cycle for chopping VCC in order to conserve battery power.
Position 1, power is applied to the device. Position 2, the output assumes the correct state at a time prior to the maximum Power-On Time, tPO(max).
The case shown is where the correct output state is HIGH . Position 3, tPO(max) has elapsed. The device output is valid. Position 4, after the output is
valid, a control unit reads the output. Position 5, power is removed from the device.
A1201, A1202,
A1203, and A1204
10
A1201, A1202,
A1203, and A1204
Power Derating
The device must be operated below the maximum junction
temperature of the device, TJ(max). Under certain combinations of
peak conditions, reliable operation may require derating supplied power or improving the heat dissipation properties of the
application. This section presents a procedure for correlating
factors affecting operating TJ. (Thermal data is also available on
the Allegro MicroSystems Web site.)
The Package Thermal Resistance, RJA, is a figure of merit summarizing the ability of the application and the device to dissipate
heat from the junction (die), through all paths to the ambient air.
Its primary component is the Effective Thermal Conductivity,
K, of the printed circuit board, including adjacent devices and
traces. Radiation from the die through the device case, RJC, is
relatively small component of RJA. Ambient air temperature,
TA, and air motion are significant external factors, damped by
overmolding.
The effect of varying power levels (Power Dissipation, PD), can
be estimated. The following formulas represent the fundamental
relationships used to estimate TJ, at PD.
PD = VIN IIN
(1)
T = PD RJA (2)
TJ = TA + T
(3)
11
A1201, A1202,
A1203, and A1204
A
1.49 .059
NOM
8
0
0.20 .008
0.08 .003
2.10 .083
1.85 .073
Preliminary dimensions, for reference only
Dimensions in millimeters
U.S. Customary dimensions (in.) in brackets, for reference only
(reference JEDEC TO-236 AB, except case width and terminal tip-to-tip)
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
A Hall element (not to scale)
B Active Area Depth 0.28 [.011]
0.96 .038
0.60 .024
0.25 .010
A NOM
2
0.25 .010
3X
SEATING
PLANE
0.10 [.004] C
3X 0.50 .020
0.30 .012
SEATING PLANE
GAUGE PLANE
1.17 .046
0.75 .030
0.20 [.008] M C A B
0.15 .006
0.00 .000
0.95 .037
1.90 .075
Pin-out Diagrams
Package UA
GND
Package LH
3
VOUT
VOUT
GND
VCC
1
VCC
Terminal List
Name
VCC
VOUT
GND
Description
Connects power supply to chip
Output from circuit
Ground
Number
Package LH Package UA
1
1
2
3
3
2
12
A1201, A1202,
A1203, and A1204
C
D
.122 3.10
.117 2.97
2.04 .0805
NOM
.062 1.57
.058 1.47
D
.0565 1.44
NOM D
.085 2.16
MAX
.031 0.79
REF
A
.017 0.44
.014 0.35
.640 16.26
.600 15.24
.019 0.48
.014 0.36
.050 1.27
NOM
Dimensions in inches
Metric dimensions (mm) in brackets, for reference only
A Dambar removal protrusion (6X)
B Ejector mark on opposite side
C Active Area Depth .0195 [0.50] NOM
D Hall element (not to scale)
The products described herein are manufactured under one or more of the following U.S. patents: 5,045,920; 5,264,783; 5,442,283; 5,389,889;
5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending.
Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit
improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro products are not authorized for use as critical components in life-support devices or systems without express written approval.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility for its use;
nor for any infringement of patents or other rights of third parties which may result from its use.
Copyright 2005, 2006, Allegro MicroSystems, Inc.
13