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    2SC3795, 2SC3795A: Silicon NPN Triple Diffusion Planar Type

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    Albert GT
    This document summarizes the specifications and characteristics of the 2SC3795 and 2SC3795A power transistors. The transistors are silicon NPN triple diffusion planar types for high-speed switching applications with high breakdown voltages. Key parameters and ratings are provided such as collector-base voltage, collector-emitter saturation voltage, and maximum current and power ratings. Electrical characteristics graphs depict variations in saturation voltage, current gain, and switching times with respect to collector current.

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    Attribution Non-Commercial (BY-NC)
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    2SC3795, 2SC3795A: Silicon NPN Triple Diffusion Planar Type

    Uploaded by

    Albert GT
    18 views3 pages
    This document summarizes the specifications and characteristics of the 2SC3795 and 2SC3795A power transistors. The transistors are silicon NPN triple diffusion planar types for high-speed switching applications with high breakdown voltages. Key parameters and ratings are provided such as collector-base voltage, collector-emitter saturation voltage, and maximum current and power ratings. Electrical characteristics graphs depict variations in saturation voltage, current gain, and switching times with respect to collector current.

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    2SC3795A(2)

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    © Attribution Non-Commercial (BY-NC)

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    This document summarizes the specifications and characteristics of the 2SC3795 and 2SC3795A power transistors. The transistors are silicon NPN triple diffusion planar types for high-speed switching applications with high breakdown voltages. Key parameters and ratings are provided such as collector-base voltage, collector-emitter saturation voltage, and maximum current and power ratings. Electrical characteristics graphs depict variations in saturation voltage, current gain, and switching times with respect to collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views3 pages

    2SC3795, 2SC3795A: Silicon NPN Triple Diffusion Planar Type

    Uploaded by

    Albert GT
    This document summarizes the specifications and characteristics of the 2SC3795 and 2SC3795A power transistors. The transistors are silicon NPN triple diffusion planar types for high-speed switching applications with high breakdown voltages. Key parameters and ratings are provided such as collector-base voltage, collector-emitter saturation voltage, and maximum current and power ratings. Electrical characteristics graphs depict variations in saturation voltage, current gain, and switching times with respect to collector current.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Power Transistors

    2SC3795, 2SC3795A
    Silicon NPN triple diffusion planar type
    For high breakdown voltage high-speed switching

    s Features
    q q q q

    Parameter Collector to base voltage Collector to 2SC3795 2SC3795A 2SC3795

    Symbol VCBO VCES VCEO VEBO ICP IC IB

    Ratings 800 900 800 900 500 8 10 5 3 40 2 150 55 to +150

    Unit V

    16.70.3

    s Absolute Maximum Ratings

    (TC=25C)

    7.50.2

    3.10.1

    4.20.2

    High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw

    Unit: mm
    0.70.1 10.00.2 5.50.2 2.70.2 4.20.2

    4.0

    1.40.1

    1.30.2

    Solder Dip

    emitter voltage 2SC3795A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

    14.00.5

    V V V A A A W C C

    0.5 +0.2 0.1 0.80.1

    2.540.25 5.080.5 1 2 3

    PC Tj Tstg

    1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)

    s Electrical Characteristics
    Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
    *V CEO(sus)

    (TC=25C)
    Symbol ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT
    *

    Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz

    min

    typ

    max 100 100 100

    Unit A A V

    2SC3795 2SC3795A

    500 15 8 1 1.5 8 1

    V V MHz s s s

    2SC3795 2SC3795A

    ton tstg IC = 3A, IB1 = 0.6A, IB2 = 0.6A, VCC = 200V

    1.2 3 1 1.2

    2SC3795 2SC3795A

    tf

    Test circuit

    50/60Hz mercury relay L 25mH 120 6V 1 15V

    Power Transistors
    PC Ta
    80 8 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C 7

    2SC3795, 2SC3795A
    IC VCE
    Collector to emitter saturation voltage VCE(sat) (V)
    100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.01 0.03 25C TC=100C

    VCE(sat) IC

    Collector power dissipation PC (W)

    70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1)

    Collector current IC (A)

    6 5 4 3 2 1 0

    IB=1200mA 1000mA 800mA 600mA 400mA 300mA 200mA 150mA 100mA 50mA 20mA

    60

    80 100 120 140 160

    10

    0.1

    0.3

    10

    Ambient temperature Ta (C)

    Collector to emitter voltage VCE (V)

    Collector current IC (A)

    VBE(sat) IC
    100 1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=25C 100C

    hFE IC
    1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03

    fT IC
    VCE=10V f=1MHz TC=25C

    Base to emitter saturation voltage VBE(sat) (V)

    Forward current transfer ratio hFE

    100 TC=100C 30 25C 10 3 1 0.3 0.1 0.01 0.03 25C

    0.1

    0.3

    10

    0.1

    0.3

    10

    Transition frequency fT (MHz)

    300

    0.1

    0.3

    10

    Collector current IC (A)

    Collector current IC (A)

    Collector current IC (A)

    Cob VCB
    10000 100 IE=0 f=1MHz TC=25C 30

    ton, tstg, tf IC
    Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=IB2) VCC=200V TC=25C tstg ton tf 0.3 0.1 0.03 0.01

    Area of safe operation (ASO)


    10 3 1 0.3 0.1 0.03 0.01 Non repetitive pulse 0.003 T =25C C ICP
    IC 10ms DC t=0.5ms 1ms

    Collector output capacitance Cob (pF)

    3000 1000 300 100 30 10 3 1 0.1

    Switching time ton,tstg,tf (s)

    10 3 1

    Collector current IC (A)

    0.3

    10

    30

    100

    10

    30

    100

    300

    Collector to base voltage VCB (V)

    Collector current IC (A)

    Collector to emitter voltage VCE (V)

    2SC3795/2SC3795A
    1000

    Power Transistors
    Area of safe operation, reverse bias ASO
    8 7 Lcoil=50H IC/IB=5 (IB1=IB2) TC=100C

    2SC3795, 2SC3795A
    Reverse bias ASO measuring circuit
    L coil IB1 Vin T.U.T IC

    Collector current IC (A)

    6 5 4 3 2 1 0 0
    2SC3795A 2SC3795

    IB2

    VCC

    tW

    Vclamp

    100 200 300 400 500 600 700 800

    Collector to emitter voltage VCE (V)

    Rth(t) t
    1000 (1) PT=10V 0.2A (2W) and without heat sink (2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

    Thermal resistance Rth(t) (C/W)

    100 (1)

    10

    (2)

    0.1 104

    103

    102

    101

    10

    102

    103

    104

    Time t (s)

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