2N5551 / MMBT5551 NPN General-Purpose Amplifier: Description
2N5551 / MMBT5551 NPN General-Purpose Amplifier: Description
2N5551 / MMBT5551 NPN General-Purpose Amplifier: Description
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2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 1
June 2013
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Ordering Information
(1)
Note:
1. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix -Y means h
FE
180~240 in 2N5551 (Test condition: I
C
= 10 mA, V
CE
= 5.0 V)
Part Number Top Mark Package Packing Method
2N5551TA 5551 TO-92 3L Ammo
2N5551TFR 5551 TO-92 3L Tape and Reel
2N5551TF 5551 TO-92 3L Tape and Reel
2N5551BU 5551 TO-92 3L Bulk
MMBT5551 3S SOT-23 3L Tape and Reel
1. Base 2. Emitter 3. Collector
SOT-23 1
2
3
Marking: 3S
TO-92
2N5551 MMBT5551
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2
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2N5551 / MMBT5551 Rev. 1.1.0 2
Absolute Maximum Ratings
(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25C unless otherwise noted.
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25C unless otherwise noted.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 160 V
V
CBO
Collector-Base Voltage 180 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector current - Continuous 600 mA
T
J
, T
stg
(2)
Junction and Storage Temperature -55 to +150 C
Symbol Parameter
Maximum
Units
2N5551 MMBT5551
P
D
Total Device Dissipation 625 350 mW
Derate above 25C 5.0 2.8 mW/C
R
JC
Thermal Resistance, Junction to Case 83.3 C/W
R
JA
Thermal Resistance, Junction to Ambient 200 357 C/W
2
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5
5
5
1
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N
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2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 3
Electrical Characteristics
(4)
Values are at T
A
= 25C unless otherwise noted.
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm
3
(3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size.
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0 mA, I
B
= 0 160 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100 A, I
E
= 0 180 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 A, I
C
= 0 6.0 V
I
CBO
Collector Cut-Off Current
V
CB
= 120 V, I
E
= 0 50 nA
V
CB
= 120 V, I
E
= 0, T
A
= 100C 50 A
I
EBO
Emitter Cut-Off Current V
EB
= 4.0 V, I
C
= 0 50 nA
On Characteristics
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V 80
I
C
= 10 mA, V
CE
= 5.0 V 80 250
I
C
= 50 mA, V
CE
= 5.0 V 30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA 0.15 V
I
C
= 50 mA, I
B
= 5.0 mA 0.20 V
V
BE(sat)
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA 1.0 V
I
C
= 50 mA, I
B
= 5.0 mA 1.0 V
Small-Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100 MHz
C
obo
Output Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 6.0 pF
C
ibo
Input Capacitance V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz 20 pF
H
fe
Small-Signal Current Gain I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz 50 250
NF Noise Figure
I
C
= 250 A, V
CE
= 5.0 V,
R
S
=1.0 k, f=10 Hz to 15.7 kHz
8.0 dB
2
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2N5551 / MMBT5551 Rev. 1.1.0 4
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
Figure 6. Input and Output Capacitance vs. Reverse
Voltage
1 10 100 1000
0
50
100
150
200
250
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
CE
=5V
h
F
E
-
D
C
C
U
R
R
E
N
T
G
A
I
N
I
C
- COLLECTOR CURRENT [mA]
1 10 100
0.01
0.1
1
10 ? 10
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
C
E
(
S
A
T
)
-
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
[
V
]
I
C
- COLLECTOR CURRENT [mA]
1 10 100
0.2
0.4
0.6
0.8
1.0
125
o
C
100
o
C
75
o
C
-40
o
C
25
o
C
V
B
E
(
S
A
T
)
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
[
V
]
I
C
- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 125
o
C
T
A
= 100
o
C
T
A
= 75
o
C
T
A
= -40
o
C
T
A
= 25
o
C
V
B
E
(
O
N
)
-
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
[
V
]
I
C
- COLLECTOR CURRENT [mA]
25 50 75 100 125
1
10
50
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
C
B
O
V = 100V
CB
0 1 2 3 4 5 6 7 8 9 10
1
10
100
C
OB
C
IB
C
A
P
A
C
I
T
A
N
C
E
[
p
F
]
REVERSE BIAS VOLTAGE [V]
2
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2N5551 / MMBT5551 Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
Figure 8. Small Signal Current Gain vs. Collector
Current
Figure 9. Power Dissipation vs. Ambient
Temperature
Between Emitter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTANCE (k )
B
V
-
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
(
V
)
C
E
R
I = 1.0 mA
C
vs Collector Current
1 10 50
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h
-
S
M
A
L
L
S
I
G
N
A
L
C
U
R
R
E
N
T
G
A
I
N
C
F
E
FREG = 20 MHz
V = 10V
CE
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
D
o
TO-92
SOT-23
2
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2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 6
Physical Dimensions
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
(ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packaging/tr/to92pdd_tr.pdf.
D
TO-92 (Bulk)
2
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2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0 7
Physical Dimensions (Continued)
Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf.
D
TO-92 (Tape and Reel, Ammo)
2
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2N5551 / MMBT5551 Rev. 1.1.0 8
Physical Dimensions (Continued)
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
1 2
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.400.30
2.920.20
1.30
+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
Fairchild Semiconductor Corporation www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
2Cool
AccuPower
AX-CAP
*
BitSiC
Build it Now
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CorePOWER
CROSSVOLT
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Current Transfer Logic
DEUXPEED
Dual Cool
EcoSPARK
EfficientMax
ESBC
Fairchild
Fairchild Semiconductor
FAST
FastvCore
FETBench
FPS
F-PFS
FRFET
OPTOPLANAR
PowerTrench
PowerXS
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock
*
TinyBoost
TinyBuck
TinyCalc
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT
*
SerDes
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Ultra FRFET
UniFET
VCX
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XS
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Obsolete Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I64