Mamta Pant Abichandani’s Post

Infineon Technologies’s CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices adopt the latest semiconductor technologies and design concepts that are tailored to industrial applications.

🗞 Electronic News! 🗞 Magnachip Semiconductor, a leading provider of power semiconductor solutions, has recently unveiled its latest innovation in the form of a 1200V 75A Insulated Gate Bipolar Transistor designed specifically for solar inverters. This new IGBT, named MBQA75T120RFS, comes in a TO-247PLUS package and is set to revolutionize the solar energy industry with its advanced features and capabilities. The company has announced plans to commence mass production of the 1200V IGBT in the TO-247PLUS package starting in October. The MBQA75T120RFS is equipped with a wide heat spreader that significantly enhances heat dissipation compared to the traditional TO-247 package. This improvement in thermal management not only boosts power efficiency but also reduces conduction loss by more than 14% when compared to its predecessor, ensuring stable operation even under heavy loads. #electricalengineering #electronics #embedded #embeddedsystems #electrical #computerchips Follow us on LinkedIn to get daily news: HardwareBee - Electronic News and Vendor Directory

There has been an increasing demand for higher voltage storage batteries and power conditioners to enhance the effectiveness of power generation, storage, and transmission. Moreover, with the expansion of storage battery systems on a larger scale, finding suitable locations and minimizing construction costs have emerged as significant challenges.

To spur efficiency and power density of #energystorage, FoxESS Co, Ltd will be opting Infineon Technologies’s 1200 V CoolSiC #MOSFETs. All variants in FOXESS’ H3PRO 15 kW–30 kW energy storage line employ 1200 V CoolSiC MOSFETs from Infineon. These 1200 V CoolSiC MOSFETs will be utilized in industrial energy storage applications using EiceDRIVER gate drivers. Daihui YU | Mamta Pant Abichandani

Solar power is driving the shift from fossil fuels and bringing us closer to having abundant, #greenenergy. 🔆 But photovoltaic panels would be useless without the power semiconductors and inverter technology behind them. 👇 Highly reliable #power semiconductors are required to convert DC to AC and transmit the power with minimal losses. They ensure that harnessing #solar power is more convenient and efficient 💡 With our CoolSiC™ MOSFET Generation 2, solar inverters can be made even smaller, lighter, more powerful, massively reducing cost and enabling #energy savings for every Watt processed. ➡️ Learn more about our CoolSiC™ MOSFET G2 setting a new standard for utilization of #siliconcarbide performance here: https://scom.ly/o0V3ewJ

The new generation of Silicon Carbide from Infineon- provides a technical advantage to next generation solar technologies

DAIHEN CORPORATION selects Infineon Technologies CoolSiC™ 2000 V modules for their innovative unit-type power conditioners for grid storage batteries. The high power density is achieved by using Infineon’s 62 mm #CoolSiC #MOSFET 2000 V module (FF3MR20KM1H). In addition to the characteristics of #SiC that enable high voltage, better thermal dissipation and high power density, Infineon’s SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes.

Infineon Technologies announced that its CoolSiC™ 2000 V modules have been selected by DAIHEN CORPORATION for their innovative unit-type power conditioners for grid storage batteries. The unit-type power conditioner for grid storage batteries launched by Daihen in March 2024 is the first product in the industry to achieve connection to storage batteries at a high DC link voltage of 1500 V. The higher voltage enables the product to be used with large-capacity storage battery facilities, which has resulted in a 40% reduction in the footprint of grid storage batteries compared to the conventional product. The high power density is achieved by using Infineon’s 62 mm #CoolSiC #MOSFET 2000 V module. In addition to the characteristics of #SiC that enable high voltage, better thermal dissipation and high power density, Infineon’s SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes.

If you are interested in finding out what role semiconductors play in the transition towards green energy and how Nexperia addresses this field, have a look at my recent article!

The many material and device advantages of the GaN HEMT in power-conversion applications are also propelling its use in power conversion for data centers, renewable energy and EVs. #GaN #PowerConversion #PSMA