IEEE Solid-State Circuits Society’s Post

Dive into the realm of UWB Transceivers and Systems with the Open Journal of the Solid-State Circuits Society! Submit your papers for our special issue. Deadline is July 24th! Find more info here: https://bit.ly/43WG7iZ #CallForPapers #UWBTransceivers #IEEE

Dive into the realm of UWB Transceivers and Systems with the Open Journal of the Solid-State Circuits Society! Submit your papers for our special issue. Deadline is July 24th! Find more info here: https://bit.ly/43WG7iZ #CallForPapers #UWBTransceivers #IEEE

It is a pleasure to share with you that my recent paper entitled "A ZCS/ZVS DC–DC Partial Power Converter with Reconfigurable H-Bridge and Variable Turns Ratio for an Integrated On-Board Charger" has been published in early access in the prestigious journal IEEE Transactions on Power Electronics. In summary, the paper is derived from my Ph.D. research and it proposes a new series-connected partial power converter (S-PPC) solution for the dc–dc stage of an integrated on-board charger (OBC). The proposed step-up/down S-PPC makes use of a tapped transformer with a reconfigurable H-bridge and a bipolar/bidirectional converter that permits extending the battery voltage when necessary, enabling operation in a wide voltage range with low conduction losses. Moreover, zero-current switching (ZCS) is achieved for the primary switches and zero-voltage switching (ZVS) for the secondary switches throughout the entire charging process. https://lnkd.in/dfJXt4PC

IEEE Solid-State Circuits Letters (SSC-L): A sub-terahertz (sub-THz) phase-locked loop (PLL) with ultra-low jitter performance and low power consumption, crucial for next-generation 6G mobile transceivers using high-order modulation schemes in high-frequency sub-THz bands. This PLL, fabricated using a 65-nm CMOS process, occupies a small silicon area and achieves a remarkable root mean square (RMS) jitter of 47 femtoseconds while consuming only 26.6 mW. Key innovations include a separate proportional path and a reset switch to extend the loop bandwidth and reduce phase noise. https://bit.ly/3OiDAZF

⚡️Quick understanding small-signal model of some single MOS circuits. Notice: gme refers to the effective gm of the transistor, which is defined as the sum of gm and gmb. Refer to IEEE SOLID-STATE CIRCUITS MAGAZINE/Ali Sheikholeslami's paper.

Commutation cell fo AC current Grasshopper : How can we handle AC current with semiconductors allowing unidirectionnal current only? David Carradine aka ‘KungFu’ : Well, we take a commutation cell that handles positive current and a second for negative current. Ghppr : Hum, brilliant… And how do we know when to activate the first and the second? KF : It would be easy if we were sure of the sign of the current. But we are not. So we activate both, provide deadtimes and pray for the diodes to fill the gap and save the converter… From basics to advanced : follow us at DMC2024 (https://lnkd.in/ezuYvnrf)

A bipolar junction transistor (BJT) is a fundamental building block of modern electronics. It is a three-terminal semiconductor device that allows a small current at its base to control a much larger current between its collector and emitter, thus acting as an amplifier or electronic switch. BJTs are made of two types: pnp and npn, which refers to the doping of the three layers of semiconductor material that make them up. Here are the main parts of a BJT: Base: The thin middle layer, which is lightly doped. Collector: The largest and most heavily doped region. Emitter: Moderately doped and acts as the source of charge carriers. By applying a small voltage to the base, the flow of current between the collector and emitter can be precisely controlled. This makes BJTs incredibly versatile components, used in a wide range of electronic devices, from simple amplifiers to complex integrated circuits. #BJT #transistor #electronics #semiconductor #engineering #circuits #amplifier #electronicsdesign #electricalengineering #emittercurrent #collectorcurrent #basecurrent #emitterbasejunction #collectorbasejunction #pnjunctiondiode #pnjunction #forwardbiased #reversebiased #BJT #bipolarjunctiontransistor https://lnkd.in/g3wSaQ-8

The MSN-65DT-051-DEC-MP PT .1-4..NI from American Microwave Corporation is an Absorptive SP65T Pin Diode Switch that operates from 100 MHz to 4 GHz. It can handle an input power (CW) of up to 20 dBm, provides an isolation of more than 40 dB, and has an insertion loss of less than 15 dB. Check out - https://ow.ly/aP8250SF9z5 #switch #pindiode #rf #switching #electronics

Embrace the future of connectivity with FS 800G optical transceivers! https://bit.ly/3vtvHdU Learn how advanced modulation #techniques and high-density optoelectronic devices make it possible. #800G #FSsolution #networking

New project, new challenge - Active Components in RF Circuits