Greg Halvorson

In the intricate world of PCB manufacturing, the significance of PCBA box build assembly cannot be overstated. It represents the final stage where various components, subassemblies, enclosures, and software/firmware integration come together to form a fully functional electronic device.

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We’ve returned from Semicon West. When we are in Santa Clara, we occasionally get the time to drop by the Intel Museum. Most of us at WFI US entered the industry in the early-mid 1990’s, so we missed the very earliest days. We got pictures of their earlier microcontrollers and EEPROM displays, with the microcontroller display in the picture below. On that day, there weren’t any class tours, although we’ve been there at the time there were tours. Fostering early talent is critical, especially for the larger organizations. Examples of Intel’s Early Microcontrollers:

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Sonic Manufacturing Technologies knows the importance of speed and precision when bringing products to market. Our seamless process takes you from concept to prototype efficiently, ensuring a swift market entry. Here are some expert tips we employ for a flawless PCB layout. #Manufacturing #ProductDevelopment

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When adding stitching vias to a PCB, strategic placement is crucial. It's essential to position them around the edges of critical components, high-speed signal traces, and ground planes. This ensures effective shielding and enhanced signal integrity. The appropriate size and spacing of stitching vias are chosen based on your application's specific requirements and the PCB's material. #PCBdesign

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PCIe Gen6 + 5nm + MRVL SerDes = Lowest Power for AI!!

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Stitching vias, also known as via stitching, are a crucial design practice for PCBs. By placing a series of vias around the perimeter of a ground plane or signal trace, a continuous conductive path is created, connecting the top and bottom layers of the board. #PCBdesign #viastitching

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Constant Current Circuit and Ramp Generator: From my 35 years old study note

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#S9KEAZ128AMLH Part numbers for the chip have fields that identify the specific part. You can use the values of these fields to determine the specific part you have received. • Operating characteristics – Voltage range: 2.7 to 5.5 V – Flash write voltage range: 2.7 to 5.5 V – Temperature range (ambient): -40 to 125°C • Performance – Up to 48 MHz Arm® Cortex-M0+ core – Single cycle 32-bit x 32-bit multiplier – Single cycle I/O access port • Memories and memory interfaces – Up to 128 KB flash – Up to 16 KB RAM • Clocks – Oscillator (OSC) - supports 32.768 kHz crystal or 4 MHz to 24 MHz crystal or ceramic resonator; choice of low power or high gain oscillators – Internal clock source (ICS) - internal FLL with internal or external reference, 37.5 kHz pre-trimmed internal reference for 48 MHz system clock – Internal 1 kHz low-power oscillator (LPO) • System peripherals – Power management module (PMC) with three power modes: Run, Wait, Stop – Low-voltage detection (LVD) with reset or interrupt, selectable trip points – Watchdog with independent clock source (WDOG) – Programmable cyclic redundancy check module (CRC) – Serial wire debug interface (SWD) – Aliased SRAM bitband region (BIT-BAND) – Bit manipulation engine (BME) • Security and integrity modules – 80-bit unique identification (ID) number per chip • Human-machine interface – Up to 57 general-purpose input/output (GPIO) – Up to 37 general-purpose input/output (GPIO) – Up to 22 general-purpose input/output (GPIO) – Up to 14 general-purpose input/output (GPIO) – Up to 71 general-purpose input/output (GPIO) – Two 32-bit keyboard interrupt modules (KBI) – External interrupt (IRQ)

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Gate breakdown is a significant challenge in GaN power semiconductor devices, especially under high-frequency operations. ROHM’s solutions, https://lnkd.in/g4tbs_Vc 1. Addition of Gate Resistors - To mitigate gate overshoot and dampen oscillations during switching. By adding resistors in the gate circuit, ROHM can control the gate drive voltage more precisely, reducing the risk of gate breakdown due to transient spikes. - Advantage: This approach balances the need for fast switching with the protection of the gate structure, ensuring long-term reliability without significantly compromising performance. 2. Robust Gate Structures - To enhance the intrinsic robustness of the gate terminal against high voltage and current stress. ROHM develops proprietary gate designs and fabrication techniques to strengthen the gate terminal, making it more resilient to breakdown. - Advantage: A robust gate structure can handle higher voltages and currents, allowing the device to operate more reliably in demanding applications. 3. Integrated Driver ICs - To optimize the driving conditions and ensure safe operation of the GaN device. ROHM integrates driver ICs with GaN power devices in a single package. These ICs are designed to precisely control the gate voltage and current, preventing over-voltage conditions that could lead to gate breakdown. - Advantage: Integration reduces parasitic inductances and improves switching performance, while also ensuring that the gate is driven within safe limits. Comparison with Other Solutions: Solution-1: Using advanced gate driver technology with adaptive dead-time control and protection features. - Comparison: The adaptive control provides dynamic protection, ROHM’s use of integrated driver ICs in a single package offers a more compact solution with potentially lower parasitic effects. Solution-2: Employing proprietary gate oxide materials and gate drive techniques to enhance robustness. - Comparison: It’s focus on material science complements ROHM's approach, but ROHM’s combination of robust gate structures with integrated driver ICs provides a comprehensive solution that addresses both material and circuit-level challenges. Solution-3: Useing enhancement-mode GaN (eGaN) FETs with optimized gate drive circuitry and packages. - Comparison: Its enhancement-mode GaN devices are highly efficient, but ROHM’s addition of gate resistors and integrated solutions can offer better control and reliability, especially in high-frequency applications. Solution-4: Focusing on wide gate drivers and low inductance packaging to prevent gate breakdown. - Comparison: Its low inductance packaging is similar to ROHM’s integrated approach, but ROHM’s specific use of gate resistors adds an additional layer of protection. ROHM’s solutions provide a balanced and competitive approach.

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We're expanding our edge computing portfolio with the new MCX W wireless MCU series. Dive into this article to learn how these advanced chips are powering smart industrial and IoT devices. #NXP #Semiconductors #IoT

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Success Story – MEMS Microfluidics Wafer Probe System Applicationhttps://hubs.ly/Q02BkK0J0

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STMicroelectronics Maintains Top Spot with 32.6% Market, onsemi Rises to Second Place in 2023 Revenue Ranking for #SiC Power Devices, Says TrendForce Corporation 💡 TrendForce 集邦科技 reports that the SiC power devices industry maintained strong growth in 2023, driven by the application of #BEVs. The top five suppliers accounted for approximately 91.9% of total revenue; ST lead the pack with a 32.6% market share while onsemi rose from fourth place in 2022 to second place. TrendForce’s analysis indicates that demand from #AI #servers and other fields will significantly increase in 2024. However, the noticeable slowdown in the sales growth of BEVs and weakening #industrial demand are affecting the SiC #supplychain. It is expected that the annual growth rate of industry revenue for SiC power devices will significantly decelerate in 2024 compared to previous years. Thanks again to TrendForce Corporation for the full article with more background and insights via the link below 💡🙏👇 https://lnkd.in/ePiyY-nw #semiconductorindustry #semiconductors #semiconductor #technology #semiconductormanufacturing #innovation #automotiveindustry #chip #chips #geopolitics #batterytechnology #battery #electricvehicles #evs

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Ready to see how smart factories are evolving? NXP’s reconfigurable AFEs are leading the charge by allowing quick factory reconfigurations, predictive maintenance, and enhanced diagnostics. ⚙️💻 Flexible automation is key, and we're making it happen. Check out how we're building smarter, more resilient factories.

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The Micron 6550 ION has just taken the lead in density, performance, AND efficiency for 60TB SSDs, addressing key challenges for AI-driven data centers. This groundbreaking innovation offers unparalleled high-density performance with up to 12.0 GB/s sequential reads and 5.0 GB/s sequential writes, all while consuming up to 20% less power compared to competition. It's been a pleasure collaborating with leaders across Micron and the industry to bring this revolutionary product to the world. The 6550 ION is set to transform AI workloads, high-performance computing, big data, and analytics environments. Learn more about this game-changing SSD at the link below! hashtag#Innovation hashtag#DataCenter hashtag#SSD hashtag#Micron hashtag#TechNews

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Really interesting analysis on date codes here, the historic view of anything beyond 2 years is too old, really isn't relevant anymore. Is component obsolescence and date code consideration an issue for your company? Rochester Electronics EMEA can help.

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Discover how #NXP is setting the industry-wide standard for dependable, secure #connectivity. This means that devices will function together without any problems, now and in the future. Make sure you look into the key to interoperability!

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Efficiency is key to enable AI at the edge. In this video our VP of AI, Carlos Morales shows how efficiently and fast Ambiq Apollo5 (Cortex M55 on SPOT) can classify images. Reach out to hear more if you are curious! #edgeAI #CortexM55 #arm #efficiencymatters #subthreshold #SPOT #edgecompute #innovation #semiconductors

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