Nick Florous, PhD

Nick Florous, PhD

Hattersheim am Main, Hessen, Deutschland
2723 Follower:innen 500+ Kontakte

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With over 20 years of work experience in the electronics industry, I am a seasoned…

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Berufserfahrung

Ausbildung

  • Hokkaido University Grafik

    北海道大学

    Activities and Societies: Alpha Phi Omega

  • Activities and Societies: ERASMUS EXCHANGE

Bescheinigungen und Zertifikate

Projekte

  • Samsung's three-dimensional V-NAND (Vertical NAND) flash memory

    Key characteristics and benefits of V-NAND: For the past 40 years, conventional flash memory has been based on planar structures that make use of floating gates. However, with current manufacturing process technology in the 10 – 20 nm range, further improvements in chip density are limited by cell-to-cell interference, necessitating trade-off in the reliability of NAND flash products in addition to added development time and costs. In Samsung's CTF-based NAND flash architecture, first developed…

    Key characteristics and benefits of V-NAND: For the past 40 years, conventional flash memory has been based on planar structures that make use of floating gates. However, with current manufacturing process technology in the 10 – 20 nm range, further improvements in chip density are limited by cell-to-cell interference, necessitating trade-off in the reliability of NAND flash products in addition to added development time and costs. In Samsung's CTF-based NAND flash architecture, first developed in 2006, an electric charge is temporarily placed in a holding chamber of a non-conductive layer of flash composed of silicon nitride (SiN), instead of using a floating gate, to mitigate interference between neighbouring cells. By making this CTF layer three-dimensional, the reliability and processing speed of our V-NAND has been significantly improved. Furthermore, by applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20 nm-class planar NAND flash. In addition, our new V-NAND exhibits between two to ten times the reliability (endurance) and writes data (tPROG, program time) at least twice as fast as multi-level-cell (MLC) type planar NAND flash memory, while consuming half the power.

    Samsung's new V-NAND offers a 128 gigabit (Gb) density in a single chip.

    Production of 24-layer 128Gb V-NAND chips started as of this month (August) in Hwaseong, Korea. Samsung has core technologies to develop more advanced high-density devices and is seeking to develop manufacturing technologies for stacking more than 24 cell layers in the future.
    Applications of V-NAND. The new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs). Based on its superior benefits, V-NAND can be applied to NAND flash devices that require high-density and high-performance.

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  • SAMSUNG GREEN MEMORY

    –Heute

    First in the Market with Advanced DDR3
    Double Data Rate Three, Synchronous DRAM, or DDR3 is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage…

    First in the Market with Advanced DDR3
    Double Data Rate Three, Synchronous DRAM, or DDR3 is the new generation of high performance, ultra-low-power memory interface technology used in high performance servers, desktops and notebooks. As the number one supplier in memory, Samsung continues to lead the industry with cutting-edge SDRAM products from the first DDR in 1997, DDR2 in 2001 and DDR3 in 2005. Samsung's high performance main memory solutions are based on JEDEC standards and leverage the company's leadership in advanced research and development of semiconductor process technology.

    Samsung's DDR3 brings new levels of performance to notebooks, desktops and servers and pushes the envelope in key areas like power consumption, speed and bandwidth. Our recent 30nm class, 1.35V, 2Gb DDR3 is the world's first ultra-low-power memory technology, with more than a 76% power savings over traditional DDR2 at 2x the bandwidth. When you're ready to make a move to DDR3 or are considering upgrading your systems, we're here to provide the best optimal solution for enhancing your competitive edge.

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Auszeichnungen/Preise

  • JSPS

    Japanese Government

    Postdoc Fellowship

Sprachen

  • English

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  • Japanese

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  • French

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    Muttersprache oder zweisprachig

  • German

    Grundkenntnisse

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